Professional Documents
Culture Documents
Toshikazu Nishida
Interdisciplinary Microsystems Group
Department of Electrical and Computer Engineering
University of Florida
nishida@ufl.edu
http://www.img.ufl.edu
General Transducer System
Interface Electronics
Exposed
Packaging-Protected
¾ Z-representation:
V = Z EB I + TEM U
F = TME I + Z MOU
I U
or
+ Two-Port
+
V F ⎡V ⎤ ⎡ Z EB TEM ⎤ ⎡ I ⎤
⎢ F ⎥ = ⎢T
Element
- - ⎣ ⎦ ⎣ ME Z MO ⎥⎦ ⎢⎣U ⎥⎦
3 (z)
6
S33 = s33E T + d 33 E 1-D linear piezoelectric
4 2 (y)
5 D33 = d 33T + ε 33
T
E coupling equations
1 (x)
T. Nishida, University of Florida 7
Piezoelectric Model
−d A
φ=
C aD
(d )
2 dA = electro-acoustic piezoelectric charge
Ceb = Cef − A = Cef (1 − k 2
) modulus [C/N] or [m/V]
CaD
Cef = free capacitance
k = coupling factor
Noise Floor
¾ Audio Audio Aeroacoustic
~ 23 – 37 dBA
Pressure
Acoustic
Integrated, psycho-acoustic
weighted
¾ Aeroacoustic
~ 28 - 40 dB Frequency
Narrow bin for spectral
measurement
1 Hz bin @ 1 kHz
T. Nishida, University of Florida 11
Microphone Choices
B&K 4135 Kulite MIC 062 SiSonic
Bandwidth 4 Hz - 100 kHz DC - 125 kHz 30Hz - 10 kHz
Noise Floor ~ 5 dB 100 dBA 37 dBA
Max SPL (10%) ~ 172 dB 194 dB ~ 124 dB
Size 6.35 mm 1.57 mm 3.75 mm x 4.75 mm
Cost O ($$$) O ($$) O(<$)
Type Capacitive Piezoresistive Capacitive
1.8 mm
Piezoelectric
Annular Electrode (Pt or Ti/Pt)
Silicon Ring
Diaphragm Piezoelectric (PZT)
Diaphragm (Si)
Bottom Top Package (Acrylic)
Electrode Electrode
a) e)
b) f)
c)
g)
d) h)
TiO2 PZT
Si Bottom Electrode - Ti/Pt
Buried Oxide (BOX) - SiO2 Photoresist
Top Electrode - Pt
T. Nishida, University of Florida 14
Packaging & Experimental Setup
Experimental Setup
Microphone Package
-4
10
R 2 = 0.9995
Taken at 1 kHz
w/ 1 Hz bin
-6
10
Data
Fit
-8
10
75 100 125 150 175
Input Acoustic Pressure [dB]
-120
-125
-130
-135
-140
101 102 103
Freq [Hz]
60
Phase [deg]
40
20
Faraday cages
85
Corner frequency (6.7 Hz)
80
@ f = 1 kHz
Magnitude [dB re 20 μPa]
75 Noise Floor:
3.7 nV / Hz
70
Sensor Noise MDS:
65 47.8 dB / Hz
60 .
Fmin_avg = 12 nN
55
Ceb [ nF] Re [ M Ω ]
Setup Noise
50 13.9 1.7
45
1 10 100 1000 10000
Freq [Hz]
-20
10 20 30 40 50 60 70 80 90
Freq
. [kHz]
0
Phase [Deg]
-50
-100
-150
10 20 30 40 50 60 70 80 90
Freq [kHz]
T. Nishida, University of Florida 20
Benchmarking
Combustor
Turbine
Jet
Total Airframe
60 70 80 90 100 110
EPNdB
r rr
Acoustic liner
r
(
p′ ( r , t ) = p′ k , ω e )
i (ω t − k ⋅ r )
specifications U (n)
tunable
¾ Tunable Helmholtz energy
electromechanical reclamation
resonator for impedance liner cell module
modification n microphones
¾ Energy reclamation
module for self-powering
¾ Wireless control module
for remote tuning
∫ w(r ) 2π rdr
R2 2
⎛ w(r ) ⎞
M aD = ρ A 2π ∫ ⎜ ⎟ rdr ΔVol V →0
0 ⎝
ΔVol ⎠ CaD = = 0
R2 P V →0 P
ΔVol ∫ w(r ) P →0
2π rdr
dA = = 0
V P →0 V
T. Nishida, University of Florida 26
Tunable Electromechanical Helmholtz Resonator
Electromechanical Helmholtz
resonator (EMHR)
¾ Piezoelectric composite backplate
(PZT-backplate) instead of
conventional solid-wall
¾ Shunt-loads across the PZT-
backplate
¾ EM DOFs possible
¾ 2 DOF/3DOF: coupled
oscillator
¾ Short circuit and open
circuit define the
capacitive and
resistive tuning
− 9%
¾ Inductive tuning is not
limited to short-circuit
and open circuit
− >19%
Helmholtz Power
Resonator Converter
Circuit
PHR Pout
Pin Pout
Pin PHR
1.5
1.2
Power (mW)
0.9
0.6
0.3
0
0 20000 40000 60000 80000 100000
Resistance (ohms)
0 nF 1 nF 10 nF 100 nF 1000 nF
T. Nishida, University of Florida 32
Meso Acoustic Energy Harvester – Setup
Acoustically excited Æ Plane Wave Tube (PWT)
Piezoelectric backplate
Speaker PWT Helmholtz resonator
30
Output Power (mW)
25
20
15
10
0
130 135 140 145 150 155 160
Incident Pressure (dBSPL)
4.7mH Linear Regulator Direct Charging
Challenges
¾ Ambient waste energy not necessarily dependable
¾ Harvestable energy scales down with decreasing volume
Smaller size → less available energy
⇒ Multiple sources
¾ Vibration
¾ Solar Liquid H2 storage tank at NASA
KSC, Photo: D. Wood
(2) Harvestable energy scales down with decreasing volume
Solar Cell
Energy
Energy Available
Reclamation
Storage Power
Circuit
Piezoelectric
|ΔR|/R (%)
6 Pt-ZnO nanowires
500ppm
250ppm
S D 4
Al/Pt/Au 100ppm
ZnO M-NRs
10ppm
2
Al2O3 Substrate
R2 R3
+
R Bias
R Bias
R1 -
VOUT
RG
+
Passivated ZnO
Exposed ZnO
R1
R2 R3
-
+
GND
GND
Level monitoring
¾ Constantly monitors H2 sensor and only sends emergency RF pulse
above preset emergency threshold
Data transmitting
¾ Constantly monitors H2 sensor and sends data periodically, except if
sensor value exceeds preset emergency threshold
H2 sensor
Hydrogen Level Resistance Average Power
0 ppm 1563 Ohms 84 uW
500 ppm 1500 Ohms 88.6 uW
Power generation target
¾ Vibration
¾ Solar
D1 D2 IBattery
PZT
D3 D4 +
Bimorph-4 C V Battery
-
A
R
100
SHAKER
Power Amplifier
50
OPTICAL TABLE
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20
L=100uH
vin 15 14 13 12 10 9 8 7 Vbattery
16 11 6
17 5
+ vds2 vds
18 4
Solar 19 3 Battery
Panel /Load
Converter
Cin NGate
NGate PGate
-
20 -PGate 2
- 21 1
Controller
Gnd
Small
Solar
Panel
+ Voc 22
Controller 40
23
24
VrefH
Testing Schematic
Charge Pump
Enable_P
Override_N Override_P (Solar)
25
Enable_N
26 27 28 29 30 31 … 39
1.5mm
500 ppm H2
N2
Rx/laptop
Modeling assumptions
¾Linear Euler-Bernoulli beam theory
¾Perfect bond assumption
¾Linear piezoelectric material and reciprocal system
Electromechanical LEM
Blocked
Effective Effective Electrical
Mass of Compliance of Electromechanic Capacitance of
Beam Beam Transduction Factor piezoceramic
Mm
φ :1
Velocity Cms Rm I
U
Mechanical Ceb Current
damping of
beam
F V
Input Re Voltage
Force across the
piezoceramic
Dielectric loss
in the
piezoceramic
Cantilever Beams
Bond
pads
Proof
mass
Clamp
Power Processor