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    Chapter - 4: Microwave Solid State Devices

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    Krishna Kumar
    The document discusses several types of solid state microwave devices, including the Ridley-Watkins-Hilsum theory criteria for materials suitable for these devices. It states that gallium arsenide, indium phosphide, and cadmium telluride meet the criteria, unlike silicon and germanium. The document then describes Gunn diodes and their equivalent circuit and operating frequencies. It also briefly mentions LSA mode oscillations in Gunn diodes and introduces IMPATT diodes, TRAPATT diodes, and tunnel diodes as other solid state microwave devices.

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    Chapter - 4: Microwave Solid State Devices

    Uploaded by

    Krishna Kumar
    38 views25 pages
    The document discusses several types of solid state microwave devices, including the Ridley-Watkins-Hilsum theory criteria for materials suitable for these devices. It states that gallium arsenide, indium phosphide, and cadmium telluride meet the criteria, unlike silicon and germanium. The document then describes Gunn diodes and their equivalent circuit and operating frequencies. It also briefly mentions LSA mode oscillations in Gunn diodes and introduces IMPATT diodes, TRAPATT diodes, and tunnel diodes as other solid state microwave devices.

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    Unit 4

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    The document discusses several types of solid state microwave devices, including the Ridley-Watkins-Hilsum theory criteria for materials suitable for these devices. It states that gallium arsenide, indium phosphide, and cadmium telluride meet the criteria, unlike silicon and germanium. The document then describes Gunn diodes and their equivalent circuit and operating frequencies. It also briefly mentions LSA mode oscillations in Gunn diodes and introduces IMPATT diodes, TRAPATT diodes, and tunnel diodes as other solid state microwave devices.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as ppt, pdf, or txt
    38 views25 pages

    Chapter - 4: Microwave Solid State Devices

    Uploaded by

    Krishna Kumar
    The document discusses several types of solid state microwave devices, including the Ridley-Watkins-Hilsum theory criteria for materials suitable for these devices. It states that gallium arsenide, indium phosphide, and cadmium telluride meet the criteria, unlike silicon and germanium. The document then describes Gunn diodes and their equivalent circuit and operating frequencies. It also briefly mentions LSA mode oscillations in Gunn diodes and introduces IMPATT diodes, TRAPATT diodes, and tunnel diodes as other solid state microwave devices.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as ppt, pdf, or txt
    of 25

    MICROWAVE SOLID STATE DEVICES

    CHAPTER -4

    RIDLEY WATKINS HILSUM THEORY


    The separation between the bottom of the lower valley and the bottom of upper valley must be greater than 0.026 eV. Electrons in the lower valley must have high mobility,small effective mass, low density where as the upper valley must have low mobility,large effective mass and high density

    Separation energy between the valleys must be smaller than the gap energy b/w conduction & valence bands

    Two most useful semiconductors Si,Ge do not meet all these criteria

    So GaAs,InP,CdTe do satisty these criteria

    GUNN DIODE

    GUNN DIODE

    Eq-ckt

    a)fL=10^7cm/sec,b) fL<10^7cm/sec, c) fL>2*10^7cm/sec

    LSA Mode
    Oscillations builds up when the ve resistance of the gunn diode equals to the load resistance. The peak to peak amplitude of the oscillations are approximately equal to the voltage range in the ve resistance region

    Impatt Diode(impact ionization avalanche transit


    time)

    Trapatt Diode(trapped plasma avalanche


    triggered transit time)

    Tunnel diode

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