R

N N-CHANNEL MOSFET

JCS2N65F

MAIN CHARACTERISTICS

Package

ID VDSS Rdson @Vgs=10V Qg

UPS

2.0 A 650 V 5.5 15.3 nC

APPLICATIONS

High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low C rss (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
B B

C rss ( 7.6pF) dv/dt RoHS

B B

ORDER MESSAGE
Order codes JCS2N65F-O-F-N-B Halogen Free NO Device Weight 2.20 g(typ)

Marking JCS2N65F

Package TO-220MF

Packaging Tube

201001A

1/8

JCS2N65F
ABSOLUTE RATINGS (Tc=25)
Value Unit V A A

Parameter Drain-Source Voltage Drain Current-continuous

B

Symbol VDSS
B B

JCS2N65F 650 2.0* 1.3*

ID T=25 T=100
B

1 Drain Current pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3

IDM
B B

6.0*

VGSS
B B

30

EAS
B B

120

mJ

IAR
B B

2.0

EAR
B B

5.4

mJ

dv/dt

5.5

V/ns

Power Dissipation
B

PD TC=25 -Derate above 25

B B B

23

0.18

W/

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes

TJTSTG
B B B B

-55+150

TL
B B

300

* *Drain current limited by maximum junction temperature

201001A

2/8

JCS2N65F
Tests conditions Min Typ Max Units Parameter Symbol

ELECTRICAL CHARACTERISTICS

Off Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss
B B

BVDSS
B B

ID=250A, VGS=0V
B B B B

650

BVDSS/ ID=1mA, referenced to 25 TJ

B B B B B B

0.65 -

10 100 100

V/ A A nA

IDSS
B B

VDS=650V,VGS=0V, TC=25
B B B B B B

VDS=520V,
B B

TC=125
B B

IGSSF
B B

VDS=0V,
B B

VGS =30V
B B

IGSSR
B B

VDS=0V,
B B

VGS =-30V
B B

-100 nA

VGS(th)
B B

VDS = VGS ,
B B B B

ID=250A
B B

2.0

4.0

RDS(ON)
B B

VGS =10V ,
B B

ID=1A
B B

3.8 5.5

gfs
B B

VDS = 40V , ID=1.0A note 4 B B B B

2.05

Coss
B B

VDS=25V, VGS =0V, f=1.0MHZ

B B B B B B

380 490 35 46

pF pF pF

Crss
B B

7.6 9.9

201001A

3/8

JCS2N65F
td(on)
B B

ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge tr
B B

VDD=300V,ID=2.0A,RG=25 note 45
B B B B B B

16 40 40 1.8 7.2

40 90 90 -

ns ns ns ns nC nC nC

50 110

td(off)
B B

tf
B B

Qg
B B

Qgs
B B

Qgd
B B

VDS =480V ID=2.0A VGS =10V note 45

B B B B B B

15.3 19

Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD
B B

IS
B B

2.0

ISM
B B

6.0

VGS=0V,
B B

IS=2.0A
B B

1.4

trr
B B

Qrr
B B

VGS=0V, IS=2.0A dIF/dt=100A/s (note 4)

B B B B B B

250 1.31

ns C

THERMAL CHARACTERISTIC
Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Max JCS2N65F 5.50 62.5 Unit /W /W

Rth(j-A) Thermal Resistance, Junction to Ambient

1 2L=55mH, IAS=2.0A, VDD=50V, RG=25 ,
B B B B B B

Notes: 1Pulse width limited by maximum junction temperature 2L=55mH, IAS=2.0A, VDD=50V, RG=25 ,Starting
B B B B B B B B

TJ=25
B B

3ISD 2A,di/dt 300A/s,VDDBVDSS,

B B

TJ=25
B B

TJ=25
B B

3ISD 2A,di/dt 300A/s,VDDBVDSS, Starting TJ=25

B B B B B B

4300s,2 5

4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature

201001A

4/8

JCS2N65F
ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics
10

On-Region Characteristics
Top VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V

150 ID [A]
1

ID [A]

Notes 1. 250s pulse test 2. TC=25

0.1 1 10

25

Notes 1.250s pulse test 2.VDS=40V

6 8 10

0.1

VDS[V]

VGS [V]

On-Resistance Variation vs. Drain Current and Gate Voltage

7.5 7.0

Body Diode Forward Voltage Variation vs. Source Current and Temperature

RDS(on) [ ]

6.5

IDR [A]

6.0

VGS=10V

25

5.5

VGS=20V
5.0

150
Note T j=25
0.5 1.0 1.5 2.0 2.5 3.0 3.5

4.5

Notes 1. 250s pulse test 2. VGS=0V

0.8 0.9 1.0 1.1 1.2 1.3

4.0

ID[A]

0.1 0.4

0.5

0.6

0.7

VS D [V]

Capacitance Characteristics
12

Gate Charge Characteristics

VDS=480V VDS=300V
8

10

VGS Gate Source Voltage[V]

VDS=120V

10

12

14

16

18

Qg Toltal Gate Charge [nC]

201001A

5/8

JCS2N65F
Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature
3.0

ELECTRICAL CHARACTERISTICS (curves)

1.2

2.5
1.1

BVDSS(Normalized)

RDS(on)(Normalized)

2.0

1.0

1.5

1.0

0.9

Notes 1. VGS=0V 2. ID=250A

-50 -25 0 25 50 75 100 125 150

0.5

Notes 1. VGS=10V 2. ID=1.0A

-50 -25 0 25 50 75 100 125 150

0.8 -75

0.0 -75

Tj [ ]

Tj [ ]

Maximum Safe Operating Area For JCS2N65F

Maximum Drain Current vs. Case Temperature

Transient Thermal Response Curve For JCS2N65F

201001A

6/8

JCS2N65F
Unitmm

PACKAGE MECHANICAL DATA TO-220MF

201001A

7/8

JCS2N65F
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice.

1. 2.

3. 4.

99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 86-432-64671533

CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432- 64675588 64675688 64678411-3098/3099 Fax: 86-432- 64671533

201001A

8/8