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Diodos: 2004 by Oxford University Press, Inc. 1 1 Microelectronic Circuits - Fifth Edition Sedra/Smith
Diodos: 2004 by Oxford University Press, Inc. 1 1 Microelectronic Circuits - Fifth Edition Sedra/Smith
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Figure 3.49 The pn junction excited by a constant-current source supplying a current I in the forward direction. The depletion layer narrows and the barrier voltage decreases by V volts, which appears as an external voltage in the forward direction.
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Diodo Ideal.
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Figure E3.2
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Vs = 24 Vp ID=???
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OR
AND
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VB=V=0
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(a) 2mA, 0V; (b) 0mA, 5V; (c) 0mA, 5V; (d) 2mA, 0V; (e) 3mA, 3V; (f) 4mA, 1V.
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Dependncia da caracterstica direta do diodo com a Temperatura Queda de 2mV para o aumento de 1C.
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Anlise Grfica
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VDD VD 0 ID R rD
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VDD VD ID R
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Circuitos Retificadores
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Vdc
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
VS VD0
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Vdc
2VS
Vdc
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
2VS 2VD
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Vdc
Vdc
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
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