Lecture 3- Semiconductor (Cht bn dn)

CU KIN IN T
ELECTRONIC DEVICES
Lecture 3- Semiconductor (Cht bn dn)

1. 2. 3. 4. 5. 6.

nh ngha cht bn dn Cu trc mng tinh th cht bn dn Cht bn dn thun Cht bn dn khng thun Dng in trong cht bn dn dn in cht bn dn

Mnh H KHOA K THUT IN T 1

HC VIN CNG NGH BU CHNH VIN THNG - PTIT

8/2009
Ha M. Do - PTIT Lecture 3 1 Ha M. Do - PTIT Lecture 3 2

1. nh ngha
- Cht bn dn l vt cht c in tr sut nm gia tr s in tr sut ca cht dn in v cht in mi khi nhit phng, = 10-4 107 .m - Cht bn dn l cht m trong cu trc di nng lng c rng

2. Cu trc mng tinh th cht bn dn n Si

vng cm l 0<EG<2eV.
- Cht bn dn trong t nhin: Bo (B), Indi (In), Gali (Ga) nhm 3, Silic (Si), Gecmani (Ge) thuc nhm 4, Selen (Se), lu hunh (S) nhm 6, Asen (As) thuc nhm 5, v.v.. hoc hp cht nh clorua ng (CuCl), Asenic Canxi CaAs, Oxit ng CuO, v.v.. - Trong k thut in t hin nay s dng mt s cht bn dn c cu trc n tinh th. Quan trng nht l hai nguyn t Gecmani v Silic. - c im ca cu trc mng tinh th ny l dn in ca n rt nh khi nhit thp v n s tng theo ly tha vi s tng ca nhit v tng gp bi khi c trn thm t tp cht. Do c im c bn ca cht bn dn l dn in ph thuc nhiu vo nhit mi trng v nng tp cht, ngoi ra cn ph thuc vo nh sng, bc x ion ha, v.v..
2.35 A
o

Mi nguyn t Si lin kt vi 4 nguyn t bn cnh

5.43 A

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Ha M. Do - PTIT Lecture 3 3 Ha M. Do - PTIT Lecture 3 4

Cu trc mng tinh th ca cht bn dn ghp

3. Cht bn dn thun (Intrinsic semiconductor)

- Cht bn dn m mi nt ca mng tinh th ca n ch c nguyn t ca mt loi nguyn t, v d nh cc tinh th Ge (gecmani) Si (silic) nguyn cht ... - V d xt tinh th Si, EG= 1,21eV (ti nhit 300K)
Si +4 Si +4 Si +4 Di dn in t E

Ga

As

Si +4

EC Si +4 Si +4 L trng EV

EG < 2 eV

Cht bn dn ghp: Hp cht ca cc nguyn t thuc phn nhm chnh nhm III v phn nhm chnh nhm V: GaAs, GaP, GaN, quan trng trong cc cu kin quang in v IC tc cao

Si +4

Si

+4

Si

+4

Di ho tr

Ha M. Do - PTIT

Lecture 3

Ha M. Do - PTIT

Lecture 3

S to thnh l trng v in t t do
Si - nhit phng mt s lin kt +4 cng ha tr b ph v to ra in t t do v l trng. - L trng cng c kh nng dn Si in nh in t t do, mang in +4 tch v c cng ln vi in tch in t. L trng Si - Bn dn thun c nng ht dn +4 l trng v nng ht dn in t bng nhau: p = n = pi = ni Si +4 Si +4

dn in ca cht bn dn

Si +4

Si

= (n. n + p. p ).q
+4

in t t do
Si +4 Si +4

n - linh ng ca in t t do p - linh ng ca l trng q in tch ca in t q=1,6.10-19C + Mt dng in khi cht bn dn t trong in trng ngoi E:

J = .E = (n. n + p. p ).q.E

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Ha M. Do - PTIT Lecture 3 7 Ha M. Do - PTIT Lecture 3 8

Gii thch cc thut ng

- Nng in t t do trong cht bn dn (Electron Concentration): n [cm-3]-s lng in t t do trong mt n v th tch cht bn dn (ni, nn, np). - Nng l trng trong cht bn dn (Hole Concentration):p [cm-3] - s lng l trng trong mt n v th tch cht bn dn (pi, pn, pp). - linh ng ca in t t do (Electron Mobility): n[cm2/(V.s)] Tham s xc nh mc phn tn ca in t trong cht bn dn, t l thun vi vn tc khuych tn ca in t v cng trng in trng, cng nh t l gia nng in t v dn in ca cht bn dn. - linh ng ca l trng (Hole Mobility) : p[cm2/(V.s)] - Tham s xc nh mc phn tn ca l trng trong cht bn dn, t l thun vi vn tc khuych tn ca l trng v cng trng in trng, cng nh t l gia nng l trng v dn in ca cht bn dn - dn in (Electrical conductivity): [.m]-1 - tham s o kh nng dn dng in thng qua mt n v vt liu, = 1/.
Ha M. Do - PTIT Lecture 3 9

Qu trnh to ht ti in v qu trnh ti hp
- Qu trnh to ra ht ti in trong cht bn dn thun ch yu l do nng lng nhit thermal generation, tc to ht ti in tng theo hm m ca nhit T. - Ngoi ra mt qu trnh to ht ti in khc l do nng lng quang hc optical generation. in t trong di ha tr c th nhn nng lng ca photon nh sng truyn ti v nhy ln di dn. V d trong bn dn thun Si nng lng ti thiu cn thit l 1.1eV, tng ng vi nh sng bc sng

~1 m.

- Trong cht bn dn cng xy ra qu trnh ti hp gia in t t do v l trng v gii phng nng lng theo cch:
1.To ra nhit lng lm nng cht bn dn: thermal recombination 2. Pht x ra photon nh sng optical recombination

Optical recombination rt him xy ra trong trong cht bn dn thun Si, Ge m ch yu xy ra trong cc loi vt liu bn dn ghp
- Qu trnh to v ti hp lin tc xy ra trong cht bn dn, v t trng thi cn bng khi tc ca 2 qu trnh bng nhau.
Ha M. Do - PTIT Lecture 3 10

Qu trnh to ht ti in v qu trnh ti hp
- Tc to ht ti in ph thuc vo T nhng li c lp vi n v p nng ca in t t do v ca l trng :

So snh cc c tnh ca Si v Ge
Cc c tnh S nguyn t------------------------------------------Nguyn t lng--------------------------------------T trng (g/cm3)--------------------------------------Hng s in mi-------------------------------------S nguyn t/cm3 ------------------------------------EG0,eV, 00K (nng lng vng cm)-------------EG, eV, 3000K -------------------------------------ni 3000K , cm-3 (nng ht dn in t) ------in tr sut nguyn tnh 3000K [.cm] ------n , cm2/ V-sec --------------------------------------p ,cm2/ V-sec --------------------------------------Dn , cm2/ sec = n.VT -------------------------------Dp , cm2/ sec = p.VT ------------------------------Ge 32 72,6 5,32 16 4,4.1022 0,785 0,72 2,5.1013 45 3800 1800 99 47 Si 14 28,1 2,33 12 5,0.1022 1,21 1,1 1,5.1010 230 1300 500 34 13

G = Gthermal (T ) + Goptical

- Trong khi tc ti hp li t l thun vi c n v p

R np

- Trng thi n nh xy ra khi tc to v ti hp cn bng

G=R

np = f (T )

- Nu trong trng hp khng c cc ngun quang v ngun in trng ngoi, trng thi n nh c gi l trng thi cn bng nhit thermal equilibrium hay nh lut Mass-action:

np = ni2 (T )
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Ha M. Do - PTIT Lecture 3 11

Ha M. Do - PTIT

Lecture 3

12

Hm phn b Fermi-Dirac
- L c s xt s phn b ht ti in trong cht bn dn. - Khi xt mt h gm nhiu ht ging ht nhau c th nm trn nhiu mc nng lng khc nhau bao gi cng ny sinh vn hm phn b, bi v xt cc tnh cht khc nhau ca h trc ht ta cn phi bit cc ht ny phn b theo cc mc nng lng trn nh th no? - Xt h gm N in t t do nm trng thi cn bng nhit ti nhit T. Phn b cc in t tun theo nguyn l loi tr Pauli. Tm phn b ca cc in t theo cc mc nng lng? - Nguyn l loi tr Pauli l h qu ca mt nguyn l c bn hn, l nguyn l khng phn bit gia cc ht ging nhau p dng vo trng hp h gm cc ht farmion (cc ht c spin l bi 1/2). - p dng nguyn l nng lng ti thiu: xc sut mt h gm N ht ging ht nhau nm trong trng thi nng lng E t l nghch vi E theo hm m exp, c th l: PN(E) ~ exp(-E/kT).
Ha M. Do - PTIT Lecture 3 13

Hm phn b Fermi-Dirac
- Bng cch p dng nguyn l trn km theo vi nguyn l loi tr Pauli ngi ta tnh ton ra li gii l hm phn b Fermi-Dirac: Xc sut mc nng lng E [eV] b in t lp y ti nhit T tun theo hm phn b Fermi- Dirac nh sau:
1 f (E) = E EF exp +1 KT
f(E) T=00K

-Trong K: Hng s Boltzmann (eV/ 0K) 0,5

K= 8,6210-5 eV/0K

T=3000K

T=25000K

T - Nhit o bng 0K EF - Mc Fermi (eV)

0 -1 0 0,2 1 (E-EF)

- EF: mc nng lng Fermi l mc nng lng ln nht cn b e- lp y ti nhit T=00 K

Ha M. Do - PTIT Lecture 3 14

Hm phn b Fermi-Dirac
- Phn tch hm Fermi-Dirac:
f (E) = 1 E EF exp KT +1
E Vng dn T = 10000K T = 3000K

Hm phn b Fermi-Dirac
Nhn xt hm phn b Fermi-Dirac: - Ti 00K, f(E) = 1 khi E < EF . Nh vy tt c cc mc nng lng thp hn EF u b in t chim ng v tt c cc mc nng lng cao hn EF u trng rng. - Xc sut cc vng chim ng khi T > 00K u lun bng 1/2 ti E = EF , khng ph thuc vo nhit . - Hm f(E) i xng qua im F, do , xc sut in t chim ng mc nng lng EF + E bng xc sut cc mc nng lng m in t khng chim ng mc EF - E . - Xc sut mc nng lng khng b in t chim ng s l:
1 f (E) = 1 1 E EF exp KT +1

T=
E > EF => f(E) = 0

00K
E < EF => f(E) = 1
( EF E )

EC EF EV

T > 00K (T=3000K; KT=26.10-3eV)

E - EF >>KT

F
T= 00K Vng ho tr

EG

f (E) e

KT KT

E - EF <<- KT f ( E ) 1 e

( E EF )

0.5

f(E)

1 f ( EF ) = 2
EF [eV]- Mc nng lng Fermi
Ha M. Do - PTIT

EC [eV]- y ca vng dn EV [eV]- nh ca vng ha tr

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Lecture 3 15

- Trong cht bn dn, xc sut mc nng lng E [eV] b in t in y cng tun theo hm phn b Fermi-Dirac.
Ha M. Do - PTIT Lecture 3 16

Nng ht ti in trong cht bn dn

- Tnh nng in t t do trong vng dn n: + Nng ht dn in t t do nm trong mc nng lng t E n E+dE trong di dn l dn [s in t/m3]: dn=2.N(E).f(E).dE + N(E) - l mt trng thi trong di dn (s lng trng thi/ eV/ m3). 4 = 3 ( 2mn ) 3 / 2 .( qn ) 3 / 2 N (E ) = .( E EC )1/ 2
h

Tnh nng ht ti in trong cht bn dn

- Tnh nng l trng trong vng ha tr p: + Nng ht dn l trng nm trong mc nng lng t E n E+dE trong di ha tr l dp [s l trng/m3]: dp=2.N(E).(1-f(E)).dE + N(E) - l mt trng thi trong di ha tr (s lng trng thi/ eV/ m3). 4 = 3 (2m p ) 3 / 2 .( q p ) 3 / 2 N (E ) = .( EV E )1/ 2
h

n = 2.N ( E ). f ( E ).dE 2. .(E EC ) .e

1/ 2 EC EC

( EF E )

KT

dE

p = 2.N ( E ).(1 f ( E )).dE 2. .(EV E ) .e

1/ 2 0 0

EV

EV

( E EF )

KT

dE

n = N C .e

( E F EC )

KT

2mn kT N C = 2. 2 h

3/ 2

p = NV .e

( EV E F )

KT

2m p kT NV = 2. h2

3/ 2

Mt trng thi hiu dng trong vng dn mn Khi lng hiu dng ca in t t do k[J/0K] Hng s Boltzmann, h hng s Plank , T [0K]
Ha M. Do - PTIT Lecture 3 17

Mt trng thi hiu dng trong vng ha tr mp Khi lng hiu dng ca l trng k[J/0K] Hng s Boltzman, h hng s Plank , T [0K]
Ha M. Do - PTIT Lecture 3 18

Khi lng hiu dng

- Kho st gia tc ca in t khi t trong in trng mi trng chn khng v cht bn dn:
Trong chn khng Trong cht bn dn

Tnh nng ht ti in trong cht bn dn

Xt tch: n. p = N N .e C V
EC EV KT

= N C NV .e EG / KT
2 .k 3/ 2 A = 4. 2 .(mn .m p ) = h
3

n. p = ni2 = pi2 = A.T 3 .e EG / KT

Vi bn dn thun n i = p i E F =
i

mp E C + EV 3 + kT ln 2 4 mn

F = (-q) = moa : cng in trng q in t: a = mn

F = (-q) = mna mn khi lng hiu dng ca in t

L trng: a =

q mp

mp, mn l khi lng hiu dng ca ht ti in l trng v in t t do, chng ph thuc vo cu trc di nng lng. E C + EV -Nu mp mn th mc Fermi EFi nm gia vng cm. E F = 2 -Nu mpmn mc Fermi ch nm gia vng cm khi T=00K
i

m n /m 0 m p /m 0
Ha M. Do - PTIT

Si 0.26 0.39
Lecture 3

Ge 0.12 0.30

GaAs 0.068 0.50

19

Nng ht ti in trong cht bn dn thun nhit phng rt nh, nn cht bn dn thun c kh nng dn in km.

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Ha M. Do - PTIT

ni = N c N v e EG / 2 kT
Lecture 3 20

Bn dn thun Si

4. Cht bn dn khng thun

- Cht bn dn m mt s nguyn t nt ca mng tinh th ca n c thay th bng nguyn t ca cht khc gi l cht bn dn khng thun. - C hai loi cht bn dn khng thun: + Cht bn dn khng thun loi N gi tt l Bn dn loi N + Cht bn dn khng thun loi P gi tt l Bn dn loi P

conduction

Donors: P, As, Sb

Acceptors: B, Al, Ga, In

ni 1010 cm-3 at room temperature

Ha M. Do - PTIT Lecture 3 21 Ha M. Do - PTIT Lecture 3 22

a. Cht bn dn loi N (cht bn dn khng thun loi cho)

- Thm mt t tp cht l nguyn t thuc nhm 5, th d As, P, Sb vo cht bn dn thun Ge hoc Si. Trong nt mng nguyn t tp cht s a 4 in t trong 5 in t ha tr ca n tham gia vo lin kt cng ha tr vi 4 nguyn t Ge (hoc Si) bn cnh; cn in t th 5 s tha ra v lin kt ca n trong mng tinh th l rt yu, nhit phng cng d dng tch ra tr thnh ht ti in - in t t do trong tinh th v nguyn t tp cht cho in t tr thnh cc ion dng c nh.
Si +4 Si +4 Si +4
Ha M. Do - PTIT

a. Cht bn dn loi N (cht bn dn khng thun loi cho)

- Nng in t t do trong cht bn dn loi N tng nhanh, nn tc ti hp tng nhanh, do nng l trng gim xung nh hn nng c th c trong bn dn thun. - Trong cht bn dn loi N, nng ht dn in t (nn) nhiu hn nhiu nng l trng pn v in t c gi l ht dn a s, l trng c gi l ht dn thiu s. nn >> pn nn=Nd+pn Nd Nd Nng ion nguyn t tp cht cho (Donor)

E Si +4 Si e5 Si +4 EC ED EV Vng dn
0,01eV

Sb

+5

+4

Mc cho EG Vng ho tr

Si

+4

Si

+4

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23 Ha M. Do - PTIT Lecture 3 24

Lecture 3

b. Cht bn dn loi P (cht bn dn khng thun loi nhn)

- Thm mt t tp cht l nguyn t thuc nhm 3, th d In, Bo, Ga vo cht
bn dn thun Ge hoc Si. Trong nt mng nguyn t tp cht ch c 3 in t ha tr a ra to lin kt cng ha tr vi 3 nguyn t Ge (hoc Si) bn cnh, mi lin kt th 4 trng v to thnh mt l trng. in t ca mi lin kt gn c th nhy sang hon chnh mi lin kt th 4 cn trng . Nguyn t tp cht va nhn thm in t s tr thnh ion m v ngc li nguyn t Ge/Si va c 1 in t chuyn i s to ra mt l trng v nguyn t ny s tr thnh ion dng c nh.
Si +4 Si +4 Si +4
Ha M. Do - PTIT

b. Cht bn dn loi P (cht bn dn khng thun loi nhn)

- Nng l trng trong cht bn dn loi P tng nhanh, nn tc ti hp tng nhanh, o nng l in t t do gim xung nh hn nng c th c trong bn dn thun. - Trong cht bn dn loi P, nng ht dn l trng (pp) nhiu hn nhiu nng in t t do np v l trng c gi l ht dn a s, in t t do c gi l ht dn thiu s. pp >> np pp=Na+np Na Na Nng ion nguyn t tp cht nhn (Acceptor)

Si

+4

Si

E +4 EC EG EA EV
Lecture 3

Vng dn

In

+3

Si

+4

Si

+4

Si

Mc nhn

0,01eV

+4

Vng ho tr
25 Ha M. Do - PTIT Lecture 3 26

Nng ht ti in trong bn dn khng thun

Tng qut trong cht bn dn ta c: (nh lut mass-action)

Nng ht ti in trong bn dn khng thun

- Trong thc t Silicon thng c pha tp c cht Donor v Acceptor. Gi s nng pha tp tng ng l Nd, Na . - to thnh bn dn N th Nd>Na, in t cho ca nguyn t Donor s ion ha tt c cc nguyn t Acceptor hon thnh lin kt cn thiu in t, nng nguyn t Donor to ra in t t do l: Nd-Na, qu trnh nh vy gi l qu trnh b Compensation. in tch trong cht bn dn N trung ha nn: Nd- Na + p - n = 0.
p = n (Nd Na ) =
n=

n. p = ni2 = pi2 = A.T 3 .e EG / KT = 3,9.T 3 / 2 e EG / 2 KT [cm 3 ]

- Trong cht bn dn loi N:
pn = ni2 ni2 = nn N d

- Trong cht bn dn loi P:

np = ni2 ni2 = pp Na

ni2 n
2

n 2 ( N d N a ).n ni2 = 0
2 1+ 4ni2 (N d N a )2

(N d N a ) + (N d N a )

- Nu Nd>>Na nn Nd-Na>>ni th c th tnh gn ng nng cc loi ht ti in nh nh sau: ni2

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Ha M. Do - PTIT Lecture 3 27 Ha M. Do - PTIT

n Nd Na
Lecture 3

Nd Na
28

Nng ht ti in trong bn dn khng thun

- Tng t to thnh bn dn P th Na>Nd, trong bn dn cng xy ra qu trnh b, tnh ton tng t ta c nng l trng trong trng hp ny c tnh nh sau:
p=

Mc Fermi trong cht bn dn khng thun

- Mc Fermi trong cht bn dn N (Nd cng tng mc Fermi cng tin gn ti y ca di dn):

(N a N d ) + (N a N d )
2 2

1+

4n (N a N d )2

2 i

nn = N C .e

( E F EC )

KT

= Nd

EF = EC KT ln

NC Nd

- Nu Na>>Nd nn Na-Nd>>ni th c th tnh gn ng nng cc loi ht ti in nh nh sau:

p Na Nd n ni2 Na Nd

EF
i

Ha M. Do - PTIT

Lecture 3

29

Ha M. Do - PTIT

Lecture 3

30

Mc Fermi trong cht bn dn khng thun

- Mc Fermi trong cht bn dn P (Na cng tng mc Fermi cng tin gn xung nh ca di ha tr):

Mc Fermi trong cht bn dn khng thun

- Mc Fecmi trong bn dn khng thun l mt hm ca nhit cho cc gi tr nng tp cht khc nhau (V d vi Si).

p = NV .e

( EV E F )

KT

= Na

EF = EV + KT ln

NV Na

EF

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Ha M. Do - PTIT Lecture 3 31 Ha M. Do - PTIT Lecture 3 32

Quan h nng ht dn trong bn dn thun v khng thun

-Gi s mc mc Fermi ca bn dn thun l EF = EFi -Nng ht dn trong bn dn thun ni=pi :

5. Dng in trong cht bn dn

- Dng in khuch tn: Dng in to ra do s chuyn ng ngu nhin do nhit ca cc ht ti in (thng thng gi tr trung bnh =0, nn b qua) v s khuch tn cc ht ti in t vng c mt cao sang vng c mt thp hn: dn dp J diff ( n ) = q . D n J diff ( p ) = q . D p 2 3 dx dx 1 electron - ( DP [m2/sec] - l h s khuch tn ca l trng; 4 5 Dn - l h s khuch tn ca in t; dP/dx, dn/dx gradient nng l trng v in t t do)
3 4 5 2 1 electron

n = ni = N c e ( Ec EFi ) / kT N c = ni e
( Ec E F i ) / kT

p = ni = Nve( EFi Ev ) / kT Nv = ni e( EFi Ev ) / kT

- Nng ht dn trong cht bn dn khng thun l:

n = N C .e

( E F EC )

kT

n = ni e

( E F E Fi ) / kT

p = NV .e
Ha M. Do - PTIT

( EV E F )

kT

p = ni e ( EFi EF ) / kT
Lecture 3 33

E
- Dng din tri (Dng in cun): Dng chuyn dch ca cc ht ti in do tc ng ca in trng E: Jdriff =Jdriff(n) + Jdriff(p) = .E = q(nn + pp).E
Ha M. Do - PTIT Lecture 3 34

5. Dng in trong cht bn dn

- Dng tng cng trong cht bn dn: J = Jdriff + Jdiff = Jn + Jp
J n = J driff ( n ) + J diff (n ) = qn n E + qDn dn dx J p = J driff ( p ) + J diff ( p ) = qp p E qD p dp dx

6. dn in cht bn dn
- dn in ca cht bn dn khi c c 2 ht ti in tham gia = q(nn + pp) - Vi bn dn loi n, n>>p, dn in l: n = qNDn [(.m)-1] - Vi bn dn loi p, p>>n, dn in l: p = qNAp [(.m)-1] + Cht tp cng nhiu th in tr sut cng gim, tuy nhin linh ng nv p li gim khi nng cht pha tp tng, nh vy c ch dn in trong vng pha tp mnh tng i phc tp - Nng gii hn cc nguyn t tp cht mun a vo tinh th bn dn c quyt nh bi gii hn ha tan ca tp cht y. Nu vt qu gii hn ny th hin tng kt ta s xy ra, khi tp cht s khng cn c cc tnh cht nh mong mun na.

- Einstein Relation: linh ng v h s khuch tn D c xc theo m hnh vt l da trn c s mt s lng ln ht ti chu nhng chuyn ng nhit ngu nhin vi s va chm thng xuyn, 2 hng s ny t l vi nhau theo Einstein Relation nh sau: Hng s Boltzmann k =1,38.10-23 [J/0K] D kT = q [C] in tch ht ti, T [0K ] q - p dng cng thc trn cho in t t do v l trng trong cht bn dn
Dn = n kT q Dp = p kT q V th = kT q
35

- in p nhit Thermal Voltage:

Ha M. Do - PTIT Lecture 3

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Ha M. Do - PTIT Lecture 3 36

 linh ng ca ht ti in
Vn tc dch chuyn ca ht ti in t l thun vi in trng ngoi: -

Tng kt
Cht bn dn thun, khng thun. Hm phn b Fermi-Dirac, Mc Fermi Nng ht ti trong cht bn dn:

|v|=E

linh ng
(Units: cm2/Vs)

n. p = ni2 = pi2 p = ni e ( EFi EF ) / kT

-

n = n i e ( E F E Fi ) / kT

n p

Note: linh ng ph thuc vo nng cht pha tp tng cng (ND + NA) !

Nng in t t do v l trng trong cht bn dn c th thay i do: Pha tp, in t trng, Nhit , Chiu sng. Mc Fermi trong cht bn dn thay i theo nng pha tp Cht bn dn thun c dn in nh, cht bn dn khng thun dn in ln.

= q ( n . n + q . q )
dn dx

J n = J driff ( n ) + J diff (n ) = qn n E + qDn

J p = J driff ( p ) + J diff ( p ) = qp p E qD p
kT q

dp dx

J = Jn + J
Ha M. Do - PTIT Lecture 3 37 Ha M. Do - PTIT

Dn = n

Dp =

kT q

V th =

kT q
38

Lecture 3

Mt s hng s
- Electronic charge, q = 1,610-19 C - Permittivity of free space, o = 8,85410-14 F/cm -Boltzmann constant, K = 8,6210-5 eV/K, k=1,38 10-23 J/K - Planck constant, h = 4.1410-15 eVs - Free electron mass, m0= me = 9.110-31 kg - Thermal voltage Vth= kT/q = 26 mV (at T= 3000K)

Ghi ch

m n /m 0 m p /m 0
at T= 300 K

Si 0.26 0.39
Si 1400 470

Ge 0.12 0.30
Ge 3900 1900
Lecture 3

GaAs 0.068 0.50

GaAs 8500 400 InAs 30000 500
39

n (cm /Vs) p (cm2/Vs)

Ha M. Do - PTIT

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Ha M. Do - PTIT Lecture 3 40