FQP16N25C/FQPF16N25C

QFET
FQP16N25C/FQPF16N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features
15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 68 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP16N25C 15.6 9.8 62.4

FQPF16N25C 250 15.6 * 9.8 * 62.4 * 30 410

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)

15.6 13.9 5.5 139 1.11 -55 to +150 300 43 0.34

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP16N25C 0.9 0.5 62.5 FQPF16N25C 2.89 -62.5 Units C/W C/W C/W

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 250 ------0.31 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 7.8 A VDS = 40 V, ID = 7.8 A
(Note 4)

2.0 ---

-0.22 10.5

4.0 0.27 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---830 170 68 1080 220 89 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200 V, ID = 15.6 A, VGS = 10 V
(Note 4, 5)

VDD = 125 V, ID = 15.6 A, RG = 25

(Note 4, 5)

--------

15 130 135 105 41 5.6 22.7

40 270 280 220 53.5 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 15.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 15.6 A, dIF / dt = 100 A/s
(Note 4)

------

---260 2.47

15.6 62.4 1.5 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 15.6A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Typical Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

10

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :

10

150 C

25 C
10
0

-55 C

10

Notes : 1. 250 s Pulse Test 2. TC = 25

Notes : 1. VDS = 40V 2. 250 s Pulse Test

10

-1

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.5

RDS(ON) [ ], Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1.0

10

VGS = 10V

0.5

10

150

VGS = 20V

25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

Note : TJ = 25

0.0

10

20

30

40

50

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature

3000

2500

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

VGS, Gate-Source Voltage [V]

10

VDS = 50V VDS = 125V VDS = 200V

Capacitance [pF]

2000

Ciss
1500

Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
0 1

1000

500

2
Note : ID = 15.6A

0 -1 10

10

10

10

20

30

40

50

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Typical Characteristics

(Continued)

1.2

3.0

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON), (Normalized) Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 7.8 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

Figure 8. On-Resistance Variation vs Temperature

10

Operation in This Area is Limited by R DS(on)

10

Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

1 ms
10
1

ID, Drain Current [A]

100 s

10 s 100 s
10
1

10 ms DC

1 ms 10 ms DC

10

Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o

10

Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o

10

-1

10

10

10

10

-1

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for FQP16N25C

Figure 9-2. Maximum Safe Operating Area for FQPF16N25C

16

12

ID, Drain Current [A]

0 25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current vs Case Temperature

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Typical Characteristics

(Continued)

10

ZJC(t), Thermal Response

D = 0 .5 0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1

N o te s : 1 . Z J C ( t) = 0 . 9 0 /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)

PDM
s in g le p u ls e

t1

10

-2

t2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP16N25C

ZJC(t), Thermal Response

D = 0 .5
10
0

0 .2 0 .1 0 .0 5
10
-1

N o te s : 1 . Z J C ( t) = 2 .8 9 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)

0 .0 2 0 .0 1 s in g le p u ls e

PDM t1 t2
0 1

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF16N25C

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS 10V Qgs Qg

VGS

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS RG VGS

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG 10V
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp

DUT

VDS (t) Time

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP16N25C/FQPF16N25C

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. A, March 2004

FQP16N25C/FQPF16N25C

Package Dimensions

(Continued)

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. A, March 2004

15.87 0.20

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

FACT Quiet series ACEx FAST ActiveArray Bottomless FASTr CoolFET FPS CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO HiSeC E2CMOS EnSigna I2C FACT ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER

ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN

POP Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM

Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Formative or In Design First Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2004 Fairchild Semiconductor Corporation

Rev. I8