Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1667

DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Absolute maximum ratings(Ta=)

SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=75 Open emitter Open base Open collector CONDITIONS VALUE 90 90 7 4 50 175 -55~175 UNIT V V V A W

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=90V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=10V 40 MIN 90 7

2SC1667

TYP.

MAX

UNIT V V

1.0 1.5 0.1 0.1 200 10

V V mA mA

MHz

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SC1667

Fig.2 outline dimensions (unindicated tolerance:0.10mm)