Its operation relies on electric field generated by input Gate voltage.

Much smaller than BJT, low power consumption, and dissipation, very high input impedance Very sensitive to input voltage signal, ideal for use in integrated circuits (CMOS range of digital logic chips). Current path between Drain and Source terminals is called channel Two types: N-channel FET, P-channel FET unipolar device, depends only on conduction of electrons (N-channel) or holes (P-channel)

 JFET Gate is in contact with channel material Its design limits its channel to being utilized in a depletion mode only. A depletion channel increases resistance (is "pinched) when reverse bias voltage is applied to gate. It is normally on, allowing current to flow freely between the source and drain leads when there is no voltage input at the gate. The JFET input impedance is high, which means that the device will draw little or no current from the circuit to which it is attached

 The gate of the MOSFET is isolated from the channel material by a layer of silicon-dioxide. A MOSFET channel may be fabricated in either depletion or enhancement forms. Depletion-mode MOSFET is a normally on, requires Gate-source voltage (V ) to switch it off. While enhancement mode MOSFET is normally off, as its conducting channel is lightly doped/ undoped. V increase, thickness of channel increase, resistance decrease, drain current increase. MOSFET has even higher impedance than the JFET, used in microprocessors, memories, calculators, Logic CMOS Gates.

n-Channel depletion-type MOSFET with VGS 0 V and an applied voltage VDD.

P-channel depletion-type MOSFET

Channel formation in the n-channel enhancement-type MOSFET. p-Channel enhancementtype MOSFET