SMD Type

NPN Silicon Transistor 2SC945

SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1

Diodes Transistors

Unit: mm

+0.1 2.4-0.1

1
+0.1 0.95-0.1 +0.1 1.9-0.1

High hFE linearity

0.55

Collector current up to 150mA

+0.1 1.3-0.1

Features

0.4

+0.05 0.1-0.01

+0.1 0.97-0.1

1.Base
+0.1 0.38-0.1

2.Emitter 3.collector

Absolute Maximum Ratings Ta = 25

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW

Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Collector to base capacitance Noise figure Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob NF fT Testconditons IC=100 A, IE=0 IC=1mA , IB=0 IE=100 A, IC=0 VCB = 60V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0V, IC =1.0mA VCE = 6.0V, IC =0.1mA IC=100mA,IB=10mA IC=100mA,IB=10mA VCB = 10 V, IE = 0 , f = 1 MHz VCE=6V,IC=0.1mA,Rg=10k,f=1kMHZ VCE=6V,IC=10mA,f =30 MHz 150 4 130 40 0.3 1.0 3.0 10 V V pF dB MHz Min 60 50 5 0.1 0.1 400 Typ Max Unit V V V A A

0-0.1

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SMD Type
2SC945

Transistors Diodes

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