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MMBT3904LT1
SOT-23 Plastic-Encapsulate Transistors

MMBT3904LT1
FEATURES Power dissipation PCM:

TRANSISTOR (NPN)

SOT-23
1. BASE 2. EMITTER 3. COLLECTOR

0.2

W (Tamb=25)
0. 95

1. 0

2. 4 1. 3

Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat)

2. 9

1. 9

0. 95

Unit: mm

unless otherwise specified)

Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) Test conditions MIN 60 40 6 0.1 0.1 0.1 100 60 0.3 0.95 250 35 35 200 50 V V MHz nS nS nS nS 300 MAX UNIT V V V

Ic= 100 A, IE=0 Ic= 1 mA, IB=0 IE= 100A, IC=0 VCB= 60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=10V, IC= 1mA VCE= 1V, IC= 50mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA

0. 4

A A A

fT td tr ts tf

f=100MHz
VCC=3.0Vdc, VBE=-0.5Vdc IC=10mAdc, IB1=1.0mAdc VCC=3.0Vdc, IC=10mAdc IB1=IB2=1.0mAdc

DEVICE MARKING
MMBT3904LT1=1AM

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