APPLICATIONGENERAL PURPOSE APPLICATION.

A1266
PNP silicon

MAXIMUM RATINGSTa25 PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -50 -50 -5 -150 625 150 V V V mA mW

55~150

ELECTRICAL CHARACTERISTICSTa=25 PARAMETER Common Emitter DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -50 -50 -5 -0.1 -0.3 -1.1 80 4.0 1.0 7.0 10 70 MIN. TYP. MAX. UNIT 400 -0.1 -0.1 A A V V V V V MHz PF dB TEST CONDITION VCE= -6VIc= -2mA VCB= -50VIE=0 VEB= -5VIc=0 Ic=- 0.1mAIE=0 Ic= -1mAIB=0 IE= -0.1mAIc=0 Ic= -100mAIB= -10mA Ic= -100mA, IB= -10mA Ic= -1mAVCE= -10V VCB= -10V, IE=0, f = 1MHz

Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance Noise Figure BVEBO VCE(sat) VBE(sat) fT Cob NF

VCE= -6V,IC= -0.1mA,f=1KHz, Rg=10K>

hFE Classification Classification hFE O 70140 Y 120240 GR 200400