Sanken Power Transistors PDF

POWER TRANSISTORS
SANKEN ELECTRIC CO.,LTD.
Bulletin No T01EE0 ( July,2001)
C AU T I O N / WA R N I N G
this publication The information in no responsibility ishas been carefully checked and is believed to be accurate; however, assumed for inaccuracies. the right to make changes without further notice to any Sanken reserves improvements in the performance, reliability, orproducts herein in the interest of manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the users written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
Contents
Transistor Selection Guide..2 Reliability.........................6 Temperature Derating in Safe Operating Area.........9 Accessories.....................9 Switching Characteristics Test Circuit....................10 Symbols and Term...........10 A1186............................11 A1215............................12 A1216............................13 A1262............................14 A1294............................15 A1295............................16 A1303............................17 A1386/A ........................18 A1488/A ........................19 A1492............................20 A1493............................21 A1494............................22 A1567............................23 A1568............................24 A1667/8.........................25 A1673............................26 A1693............................27 A1694............................28 A1695............................29 A1725............................30 A1726............................31 A1746............................32 A1859/A ........................33 A1860............................34 A1907............................35 A1908............................36 A1909............................37 A2042............................38 B1257............................39 B1258............................40 B1259............................41 B1351............................42 B1352............................43 B1382............................44 B1383............................45 B1420............................46
SANKEN POWER TRANSISTORS

B1559............................47 B1560............................48 B1570............................49 B1587............................50 B1588............................51 B1647............................52 B1648............................53 B1649............................54 B1659............................55 B1685............................56 B1686............................57 B1687............................58 C2023 ...........................59 C2837 ...........................60 C2921 ...........................61 C2922 ...........................62 C3179 ...........................63 C3263 ...........................64 C3264 ...........................65 C3284 ...........................66 C3519/A ........................67 C3678 ...........................68 C3679 ...........................69 C3680 ...........................70 C3830 ...........................71 C3831 ...........................72 C3832 ...........................73 C3833 ...........................74 C3834 ...........................75 C3835 ...........................76 C3851/A ........................77 C3852/A ........................78 C3856 ...........................79 C3857 ...........................80 C3858 ...........................81 C3890 ...........................82 C3927 ...........................83 C4020 ...........................84 C4024 ...........................85 C4064 ...........................86 C4065 ...........................87 C4073 ...........................88 C4130 ...........................89 C4131 ...........................90 C4138 ...........................91 C4139 ...........................92 C4140 ...........................93 C4153 ...........................94 C4296 ...........................95 C4297 ...........................96 C4298 ...........................97 C4299 ...........................98 C4300 ...........................99 C4301 .........................100 C4304 .........................101 C4381/2 ......................102 C4388 .........................103 C4418 .........................104 C4434 .........................105 C4445 .........................106 C4466 .........................107 C4467 .........................108 C4468 .........................109 C4495 .........................110 C4511 .........................111 C4512 .........................112 C4517/A......................113 C4518/A......................114 C4546 .........................115 C4557 .........................116 C4662 .........................117 C4706 .........................118 C4883/A......................119 C4886 .........................120 C4907 .........................121 C4908 .........................122 C5002 .........................123 C5003 .........................124 C5071 .........................125 C5099 .........................126 C5100 .........................127 C5101 .........................128 C5124 .........................129 C5130 .........................130 C5239 .........................131 C5249 .........................132 C5271 .........................133 C5287 .........................134 C5333 .........................135 C5370 .........................136 D1769 .........................137 D1785 .........................138 D1796 .........................139 D2014 .........................140 D2015 .........................141 D2016 .........................142 D2017 .........................143 D2045 .........................144 D2081 .........................145 D2082 .........................146 D2083 .........................147 D2141 .........................148 D2389 .........................149 D2390 .........................150 D2401 .........................151 D2438 .........................152 D2439 .........................153 D2557 .........................154 D2558 .........................155 D2560 .........................156 D2561 .........................157 D2562 .........................158 D2589 .........................159 D2641 .........................160 D2642 .........................161 D2643 .........................162 SAH02 ........................163 SAH03 ........................164 SAP09N ......................165 SAP09P ......................166 SAP10N ......................167 SAP10P ......................168 SAP16N ......................169 SAP16P ......................170 SAP Series Application Information................171 Discontinued Parts Guide ........................176
Transistor Selection Guide

s VCEO-IC
800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 C3679 C4300 C3680 C4301 C5002 C5003 C5124
600 550
C4706 C4518 C4518A C5287 C3830 C4907 C4073 C4418 C4662 C5130 D2141 C3832 C3890 C4130 C4546 C3927 C4557 C3831 C4138 C4296 C3833 C4297 C5071 C4139 C4298 C4434 C4140
500 400
380 300 250 230 200
C2023 C5333 D2017 A1294 C3263 A1493 C3857 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 D2562 A1295 C3264 A1494 C3858 A1216 C2922
A1668 C4382 A1859A C4883A
D2016
C5271 D2557 D2558
180
CollectorEmitter Voltage VCEO(V)
160
150
A1667 A1859 C4381 C4883
B1559 B1587 D2389 D2438
140
120
D2015
D1769 D1785 D2045 B1659 B1685 B1686 B1687 D2489 D2641 D2642 D2643 B1258 A1693 A1725 A1726 A1907 C4466 C4511 C4512 C5099
C3834 C3835 C4153
A1694 A1908 C4467 C5100
A1186 B1560 B1588 C2837 D2390 D2439 A1695 A1909 C4468 C5101 B1259 D2081
B1570 D2401
A1303 A1860 C3284 C4886
B1648 D2561
B1382 B1420 D2082
B1383 D2083
110
100 80
C3852A
A1488A C3851A D2014
60
C3852
A1262 A1488 B1257 C3179 C3851 D1796 A2042 C4024
A1568 B1351 B1352 C4065
50
C4495
40 2 3 4 5 6 7 8 10
A1567 A1746 C4064 C5370 12
C4131
14
15
16
17
18
25
Collector Current IC(A)

s Transistors for Switch Mode Power Supplies (for AC80 130V input) VCBO(V) 250 VCEO(V) 200 IC (A) 5 5 C3832 MT-25 (TO220) FM20 (TO220F) C5271 C4073 C4418 C4662 C3890 C4130 C4138 C3833 C5071 C4139 C4434 C4140 C5130 C4546 C4907 C3831 C5249 C4296 C4297 C4298 MT100 (TO3P) FM100 (TO3PF)
7 500 400 10 12 15 18 5 7 6 10 3
400 600 500 600
C3830
s Transistors for Switch Mode Power Supplies (for AC180 280V input) VCBO(V) VCEO(V) IC (A) 3 5 10 14 C4020 3 900 800 5 7 C4304 C3679 C3680 C4908 C3678 C4299 C4445 C4300 C4301 MT-25 (TO220) C5239 FM20 (TO220F) C4517(A) C4518(A) MT100 (TO3P) C5287 C3927 C4706 FM100 (TO3PF)
900 (1000)
550 600
C4557

Transistors for Audio Amplifiers
s Single Transistors
q Single
Emitter Part No. PC(W) 30 50 80 6 MT-100 (TO3P) FM100 (TO3PF) 60 60 75 120 8 MT-100 (TO3P) 50 20 FM100 (TO3PF) 140 180 140 180 200 10 15 10 MT-100 (TO3P) 15 15 MT-200 (2-screw mount) 17 80 80 85 100 130 150 200 VCEO(V) IC (A) hFE(min) fT(MHz) Package FM20 (TO220F) MT-25 (TO220)
2SA1725/2SC4511 2SA1726/2SC4512 2SA1693/2SC4466 2SA1907/2SC5099 2SA1908/2SC5100 2SA1694/2SC4467 2SA1909/2SC5101 2SA1673/2SC4388 2SA1695/2SC4468 2SA1492/2SC3856 2SA1493/2SC3857 2SA1494/2SC3858
q LAPT
(Multi emitter for High Frequency) Part No. PC(W) 80 100 125 130 130 130 150 200 200 160 180 15 230 160 180 17 230 50 150 VCEO(V) IC (A) 14 10 14 hFE(min) fT(MHz) 50 60 50 MT-100 (TO3P) 40 35 50 40 35 MT-200 (2-screw mount) Package FM100 (TO3PF)
2SA1860/2SC4886 2SA1186/2SC2837 2SA1303/2SC3284 2SA1386/2SC3519 2SA1386A/2SC3519A 2SA1294/2SC3263 2SA1215/2SC2921 2SA1216/2SC2922 2SA1295/2SC3264

q Transistors
with built in temperature compensation diodes for audio amplifier PC(W) 80 100 150 VCEO(V) 150 150 160 IC (A) 10 12 15 hFE(min) 5000 5000 5000 Emitter Resistor() 0.22 0.22 0.22
Part No. SAP09P/SAP09N SAP10P/SAP10N SAP16P/SAP16N

s Darlington Transistors
Part No. 2SB1686 2SD2642 2SB1659 2SD2589 2SB1685 2SD2641 2SB1687 2SD2643 2SB1587 2SD2438 2SB1559 2SD2389 2SB1588 2SD2439 2SB1649 2SD2562 2SB1560 2SD2390 2SB1647 2SD2560 2SB1570 2SD2401 2SB1648 2SD2561 PC(W) 30 50 110 60 60 75 80 80 15 85 100 150 130 150 150 200 17 15 12 200 10 150 8 10 5000 6 VCEO(V) IC (A) hFE(min) fT(MHz) 100 60 100 60 100 60 100 60 65 80 65 80 50 55 45 70 50 55 45 70 50 55 45 70 MT-200 (2-screw mount) MT-100 (TO3P) FM100 (TO3PF) MT-100 (TO3P) FM100 (TO3PF) Package FM20 (TO220F) MT-25 (TO220) MT-100 (TO3P)
s Temperature compensation Transistors and Driver Transistors

Part No. 2SC4495 2SC4883 20 2SC4883A 2SA1859 20 2SA1859A 180 180 150 2 60 60 Driver, Complement 2SC4883A PC(W) 25 VCEO(V) 50 150 2 60 120 FM20 (TO220F) IC (A) 3 hFE(min) 500 fT(MHz) 40 Package Remarks Temperature compensation Driver, Complement 2SA1859 Driver, Complement 2SA1859A Driver, Complement 2SC4883
Reliability
1. Definition of Reliability
The word reliablity is an abstract term which refers to the degree to which equipment or components, such as semiconductor devices, are resistant to failure. Reliability can be and is often measured quantitatively. Reliability is defined as whether equipment or components (such as a semiconductor device) under given conditions perform the same at the end of a given period as at the beginning.
4. Applications Considered on Reliability

a) The type and specifications of our transistors and semiconductor devices vary depending on the application that will be required by their intended use. Customer should, therefore, determine which type will best suit their purposes. b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external leads into the interior. This may cause deterioration if the maximum allowable temperature is exceeded. c) When using the trasistor under pulse operation or Max.Allowable inductive load, the Safe Current Operating Area (SOA) for the current and voltage must not be exceeded (Figure 2).
Ma
2. Reliability Function
In general, there are three types of failure modes in electronic components:
S ec
llo xA
ond
Collector Current Ic(A)
(a) (b) Failure Rate ()
General Electronic Equipment or Components
SOA(Safe Operating Area)
Semiconductor Devices
Estimation
Collector-Emitter Voltage Vce(V)
Figure 2 SOA
Initial Failure Random or Chance Failure Time (t) Wear-out Failure
Figure 1 Bath Tub Curve

These three types of failure describe bathtub curve shown in Figure 1. Infant failures can be attributed to trouble in the production process and can be eliminated by aging befor shipment to customers, stricter control of the production process and quality control measures. Semiconductor devices such as transistors, unlike electronic equipment, take a considerable amount of time to reach the stage where wear-out failure begins to occur. And, as shown in Figure 1 (b), they also last much longer than electronic equipment. This shows that the longer they are used the more stable they actually become. The reduction that occurs in random failures can be approximated by Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that occurs with transistors.
d) The reliability of transistors and semiconductor devices is greatly affected by the stress of junction temperature. If we accept in general proceed in the form of Arrhenius equation, the relationship between the junction temperature Tj and lifespan L can be expressed with the following empirical formula n L = A+ B (4) Tj It is, hence, very important to derate the junction temperature to assure a high reliability rate.
5. Reliability Test
Sanken bases its test methods and conditions on the following standards. Tests are conducted under these or stricter conditions, The details of these are shown in Table 1. MIL-STD-202F (Test method for electrical and electronic components) MIL-STD-750C (Test method for semiconductor equipment) JIS C 7021 (Endurance test and environmental test method for individual semiconductor devices) JIS C 7022 (Endurance test and environmental test method for integrated circuits of semiconductors)
3. Quantitative Expression of Reliability

While there are many ways to quantitatively express reliability, two criteria, failure rate and life span, are generally used to define the reliability of semiconductors such as transistrors. a) Failure Rate (FR) Failure rate often refers to instantaneous failures or (t). In general of reliability theory, however, the cumulative failure rate, or Reliability Index, is r(t) (1) Nt Where N = Net quantity used, and r(t) = Net quantitiy failed after t hours If we assign t the arbitrary FR= F R = r 100 (%/1,000 hours)(2) N In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours). b) Life Span(L) Life Span can be expressed in terms of average lifespan or as Mean Time Between Failure (MTBF), but assuming that random failure is shown by the Index Distribution [ (t) = constant], then Life Span or L can be shown by the equation 1 L = (hours)(3) F R
6. Quality Assurance
To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts through the entire production process. Our quality assurance system is shown in Figure 3.
Max. Allowable Voltage Vceo(Max)
1. Infant failure 2. Random failure 3. Wear-out failure
wa
o akd Bre ary wer Po bl e
wn
Loc
us
Reliability
Table 1: Test Methods and Conditions
Test Continuous Operations Test Intermittent Operation Test High Temperature Storage Test Low Temperature Storage Test Moisture Resistance Test
Details of the Testing Method Collector dissipation with maximum junction temperature is applied continuously at room temperature to judge lifespan and reliability under transistor operating conditions. Power equal to that used in the Continuous Operations Test is applied intermittently to test the transistors lifespan and reliability under on and off conditions. Confirms the highest storage temperature and operating temperature of transistors. Confirms the lowest storage temperature of transistors. Tested at RH=85% and TA=85C for the effects of the interaction between temperature and humidity, and the effects of surface insulation between electrodes and high temperature/high humidity. Tested at Tstg min Room temp. Tstg max Room temp. for 10 cycles (one cycle 30 min. 5 min. 30 min. 5 min.) to detect mechanical faults and characteristic changes caused by thermal expansion and shrinkage of the transistor. Tested at 100C (5 min.), 25C (within 3 sec.), 0C (5 min.) for 10 cycles to check for mechanical faults and characteristic changes caused by thermal expansion and shrinkage of transistor. Tested at 260 5C, 10 1 sec, by dipping lead wire to 1.5mm from the seating plane in solder bath to check for characteristic changes caused by drastic temperature rises of exterior lead wire. Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for 2 hours each (total 6 hours) to check for characteristic changes caused by vibration during operation and transportion. Tested by dropping 10 times from 75 cm height to check for mechanical endurance and characteristic changes caused by shock during handling.
LTPD(%) *5/1000hrs 5/1000hrs 5/1000hrs 5/1000hrs 5/1000hrs
Heat Cycle Test
Heat Shock Test
Soldering Heat Test
Vibrations Test
Drop Test
Reliability Standard : 60%
Figure 3 Quality Assurance System

Material Purchasing Incoming Inspection Production Process Specialized Tests for all units Marking Packing Shipping Inspection Shipment Periodical Quality Assurance Test 1. Operational Life (continuous) Test 2. Operational Life (intermittent) Test 3. High Temperature Storage Test 4. Low Temperature Storage Test 5. Moisture Resistance Test 6. Heat Cycle Test 7. Heat Shock Test 8. Soldering Heat Test 9. Vibaration Test 10. Drop Test Physical and Chemical Inspection Quality Control Production Process Control
Reliability
7. Notes Regarding Storage, Characteristic Tests, and Handling Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests, please observe the following cautions. a) Cautions for Storage 1. Ensure that storage conditions comply with the standard temperature (5 to 35C) and the standard relative humidity (arround 40 to 75%) and avoid storage locations that experience extreme changes in temperature or humidity. 2. Avod locations where dust or harmful gases are present, and avoid direct sunlight. 3. Reinspect for rust in leads and solderbility that have been stored for a long time. b) Cautions for Characteristic Tests and Handling 1. When characteristic tests are carried out during inspection testing and other standard test periods, protect the transistor from surges of power from the testing device, shorts between the transistor and the heatsink c) Silicone Grease When using a heatsink, please coat the back surface of the transistor and both surfaces of the insulating plate with a thin layer of silicone grease to improve heat transfer between the transistor and the heatsink. Recommended Silicone Grease G-746 (Shin-Etsu Chemical) YG6260 (GE Toshiba Silicone) SC102 (Dow Corning Toray Silicone) d) Torque when Tightening Screws Thermal resistance increases when tightening torque is small, and radiation effects are decreased. When the torque is too high, the screw can cut, the heatsink can be deformed, and/or distortion can arise in the products frame. To avoid these problems, Table 2 shows the recommended tightening torques for each product type. Table 2. Screw Tightening Torques Package
MT25 (TO-220) FM20 (TO-220 Full Mold) MT100 (TO-3P) FM100 (TO-3P Full Mold) MT200 ( two-point mount) 2GR ( one-point mount)
Screw Tightening Torque

0.490 to 0.686 N m (5 to 7kgf cm) 0.490 to 0.686 N m (5 to 7kgf cm) 0.686 to 0.822 N m (7 to 9kgf cm) 0.686 to 0.822 N m (7 to 9kgf cm) 0.686 to 0.822 N m (7 to 9kgf cm) 0.686 to 0.822 N m (7 to 9kgf cm)
e) Soldering Temperature In general, the transistor is subjected to high temperatures when it is mounted on the printed circuit board, whether from flow solder from a solderbath, or, in hand operations from a soldering iron. The testing method and test conditions (JIS-C-7021 standards) for a transistors heat resistance during soldering are: At a distance of 1.5mm from the transistors main body, apply 260C for 10 seconds, and 350C for 3 seconds. However, please stay well within these limits and for as short a time as possible during actual soldering.
Reliability
s Temperature Derating in Safe Operating Area
Flange (case) temperature is typically described as 25C, but it must be derated subject to the operating temperature. This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature range of 260C to 360C. Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is set at 260C.
Pc
Collector Current Ic (A)
100
ga
re
Collector Current Derating coefficient DF (%)
lim
itin
a
B S/ lim itin ga rea
S/
50
lim
itin lim Pc
itin
ar
ea
ga rea
Tc=25C Collector-Emitter Voltage VCE (V)
50
100
150
200
250
300
Case Temp Tc (C)
Fig.1 Safe Operating Area
Fig.2 Derating Curve of Safe Operating Area
Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe operating area in order to obtain the derated current.
s Accessories
6 Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested. 6 Sanken transistor case is a standard size, and can be used with any generally sold accessories.
Insulater: Mica, with a thickness of 0.06mm, +0.045 0.005 allowance Type Name:Mold(10)Mica Type Name:Mold(14)Mica
3.2 +0.1 0 3.75 +0.1 0
0.1
Insulation Bush for MT-25 (TO220)
Type Name:Mold(9)Mica
23.2 +0.1 0 12.00.1
10.0
14.00.1
24.00.1
6.00.2 3.70.1
7.0
+0.2 0
20.0
0.1
3.1
5.00.1 19.40.1 R0.5 7.0

0.1
2.50.2 24.380.1
+0.2 0
1.50.2
24.0
R0.5
39.00.1
R0.5
Switching Characteristics
s Typical Switching Characteristics (Common Emitter)
VCC (V) RL () IC (A) VB2 (V) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)
tr (s)
tstg (s)
tf (s)
sSwitching Characteristics Test Circuit/Measurement Wave Forms

PNP
0
+VBB2
20s IC R2 IB2 0 IC ton tstg tf IB2 0 IB1 0 IC ton RL 0 tstg tf 50s R1 D.U.T IB1 Collector Current 0.1IC 0.9IC 0
VCC
VBB1
GND
RL 0
NPN
0 50s
+VBB1
IC R1 IB1 D.U.T IB2 0 20s VBB2 GND R2 Collector 0.9IC Current 0.1IC VCC Base Current 0
Symbols
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) VFEC fT Cob Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Operating Junction Temperature Storage Temperature Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Definition DC Voltage between Collector and Base when Emitter is open Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction DC voltage between Emitter and Base when Collector is open DC current passing through Collector electrode DC current passing through Base electrode Power consumed at Collector junction Maximum allowable temperature value at absolute maximum ratings Maximum allowable range of ambient temperature at non-operation Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base Breakdown voltage between Collector and Emitter when Base is open Ratio of DC output current and DC input current at a specified voltage and current (Emitter common) DC voltage between Collector and Emitter under specified saturation conditions DC voltage between Base and Emitter under specified saturation conditions
Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open Cut-off Frequency Collector Junction capacitance Frequency at the specified voltage and current where hFE is 1 (0dB) Junction capacitance between collector and Base at a specified voltage and frequency
Ta=25C unless otherwise specified.
10
IB1
Base Current 0
IB2 0
LAPT
2SA1186
Application : Audio and General Purpose
(Ta=25C) Ratings 100max 100max 150min 50min 2.0max 60typ 110typ V pF
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 10 2 100(Ta=25C) 150 55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=1A VCB=80V, f=1MHz
External Dimensions MT-100(TO3P)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

5.450.1 B C E
sTypical Switching Characteristics (Common Emitter)

VCC (V) 60 RL () 12 IC (A) 5 VB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (s) 0.25typ tstg (s) 0.8typ tf (s) 0.2typ
5.450.1
Weight : Approx 6.0g a. Part No. b. Lot No.
I C V CE Characteristics (Typical)
A
V CE ( sat ) I B Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C V BE Temperature Characteristics (Typical)

10 (V C E =4V)
10
00
00 m
A 60m
A
2
Collector Current I C (A)
8 0m A
6
mA 120 100mA
60mA
4
Tem
p) Tem
(Ca
se
125
25
5A
0.5
1.0
1.5
2.0
30
1 Base-Emittor Voltage V B E (V)
C (
C(
Ca
I B =20m A
Cas
eT
se
emp
40mA
p)
I C =10A
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
h FE I C Characteristics (Typical)
(V C E =4V) 300
h FE I C Temperature Characteristics (Typical)

(V C E =4V) 200 125C DC C urrent G ain h FE
j - a ( C/W)
j-a t Characteristics
3
DC Curr ent Gain h FE
25C
100
Typ
100 30C
Transient Thermal Resistance 1 5 10
50
0.5
50
20 0.02
0.1
0.5
10
30 0.02
0.1
0.5
0.2
10
100 Time t(ms)
1000 2000
f T I E Characteristics (Typical)
(V C E =12V) 80 30
Safe Operating Area (Single Pulse)

100 M aximum Power Dissip ation P C (W)
P c T a Derating
Cu t-of f Fr eque ncy f T ( MH Z )
Collecto r Cur rent I C (A)
60
T yp
10
10 ms
W ith In
fin
ite he
40
50
at si nk
1 Without Heatsink Natural Cooling
20 0.5
0 0.02
0.1
10
0.2 2
10
100
200
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Emitter Current I E (A)
Ambient Temperature Ta(C)
11
LAPT
2SA1215
(Ta=25C) Ratings 100max 100max 160min 50min 2.0max 50typ 400typ V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 5.450.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 160 5 15 4 150(Tc=25C) 150 55 to +150 Unit V V V A A W C C
External Dimensions MT-200

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b

A A A m A 0m 0m 0m 0m 50 60 50 40 30 7


15 (V C E =4V)
16
A
12 Collector Current I C (A)
1 50 m A
10 0mA
200
mA
10
p)
) emp
eT
C (
(Ca
0.2
0.4
0.6
0.8
1.0
30
I B =20mA
5A
125
25C
C (
Cas
I C =10A
Cas
50mA
se T
e Te
mp)
em
(V C E =4V) 200 DC Curr ent Gain h FE

(V C E =4V) 200 125C DC Curr ent Gain h FE
j- a ( C/W)
Transient Thermal Resistance
2
100
Typ
100
25C 30C
0.5
50
50
10 0.02
0.1
0.5
5 10 15
30 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

160
P c T a Derating
60 Collector Curr ent I C (A)

Ty p
Ma xim um Powe r Dissipat io n P C (W)
10
Cut- off F req uency f T ( MH Z )
m s
10
D C
120
W ith In
fin ite
40
80
he at si nk
1 0.5 Without Heatsink Natural Cooling
20
40
Without Heatsink 0 0.02 0.1 1 10 0.2 2 10 100 200 5 0 0 25 50 75 100 125 150
12
LAPT
2SA1216
20.0min 4.0max
SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8A IC=8A, IB=0.8A VCE=12V, IE=2A VCB=10V, f=1MHz

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

VCC (V) 40 RL () 4 IC (A) 10 VB2 (V) 5 IB1 (A) 1 IB2 (A) 1 ton (s) 0.3typ tstg (s) 0.7typ tf (s) 0.2typ
1.
m 00 A
V CE ( sa t ) I B Characteristics (Typical)

17 15 Collector Current I C (A) (V C E =4V)
5A 1 A 00 m A
17 15
0 40
mA
3 00 m A
2 00 mA
10
e T em p) Tem p)
150mA
10
100mA
5
C(
125
50mA
C(C
25
I C =10A 5A 0 0
I B =20mA
0
0.2
0.4
0.6
0.8
1.0
30
1
C(
Cas
ase
e T emp
Cas
2.4
Base-Emittor Voltage V B E (V)
(V C E =4V) 300 DC Curr ent Gain h F E

(V C E =4V) 200 DC Cur rent Gain h F E 125C 100 25C 50 30C
j - a ( C/W)
Transient Thermal Resistance 2
100
Typ
0.5
50
10 0.02
0.1
0.5
10 17
10 0.02
0.1
0.5 1 Collector Current I C (A)
10 17
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 60 50

200
P c T a Derating
M aximum Power Dissipa ti on P C (W)
10 m
160
Cu t-off Fre quen cy f T (MH Z )
40
yp
Collect or Cur ren t I C (A)
10 5
DC
ith In fin
120
ite he at si nk
80
20
40 Without Heatsink 0 25 50 75 100 125 150
0 0.02
0.1
10
0.2 2
10
100
300
5 0
13
2SA1262

12.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=60V VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=0.2A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
16.00.7
8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 B C E 2.5 1.4

VCC (V) 20 RL () 10 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 200 IB2 (mA) 200 ton (s) 0.25typ tstg (s) 0.75typ tf (s) 0.25typ

1.5

4 (V C E =4V)
8
3
0m
60m
A
50m A
40m A
30mA
1.0
emp eT Cas 125 C (
20mA
10mA
1
I C =3A 2A 1A 0 0.1
I B =5mA
0.5
0.1
0.5
0.5
30C
25C
(Cas
0.5
mp) (Cas e Tem p)
e Te
1.0
1.5
(V C E =4V) 500 DC Curr ent Gain h F E D C Cur r ent Gai n h F E 200 125C 100 25C 30C 50
(V C E =4V)
j- a ( C/W)
5
Typ
100
50
20 0.01
0.1
0.5
20 0.02
0.1 Collector Current I C (A)
0.7
10 Time t(ms)
100
1000
60 (V C E =12V) 10

30
P c T a Derating
1m
50 Cut- off F req uency f T (M H Z ) Collector Cur rent I C (A)
M aximum Po wer Dissipat io n P C (W)
5
10
10 m s
0m s
W ith
40
Typ
20
In fin ite he
30
at si nk
20
0.5
Without Heatsink Natural Cooling
10
10
Without Heatsink 0 0.005 0.01 0.1 2 2 5 10 50 100 0 0 25 50 75 100 125 150
0.05
0.1
0.5
Emitter C urrent I E (A)
14
LAPT
2SA1294
20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), Y(70 to 140)

5.450.1 B C E

5.450.1
Collector-Emitter Saturation Voltage V C E (sa t) (V )

3

15 (V C E =4V)
3 .0A 2 .0 A
15
. 1
5A
.0 1
A
5 00 mA
30
0m
10
mA 200
10
mp ) emp )
seT (Ca
30
1 00 mA
eTe
C (
125
I B =20mA
5A 0 0
0.5
1.0
1.5
2.0
25C
C (
Cas
50mA
I C =10A
Cas
eTe
mp)
2.5
(V C E =4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 200 125C 100
(V C E =4V)
j- a ( C/W)
3
Typ
100
25C
50
50
30C
0.5
10 0.02
0.1
0.5
5 10 15
10 0.02
0.1
0.5
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60 40

130
10 m s
P c T a Derating
Cut-o ff F requ ency f T (MH Z )

DC
Ma ximum Po we r Dissipa ti on P C (W)
100
W ith
40
Ty
In
fin ite he at si
1 0.5 Without Heatsink Natural Cooling 0.1
nk
50
20
Without Heatsink 10 100 300 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
10
0.05 3
15
LAPT
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 230 230 5 17 5 200(Tc=25C) 150 55 to +150
2SA1295
Application : Audio and General
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)

(Ta=25C) Unit V V V A A W C C

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
hFE Rank O(50 to 100), Y(70 to 140)

Collector-Emitter Saturation Voltage V C E (s a t) (V ) 17
A 3
. 2

3

(V C E =4V) 17 15 Collector Current I C (A)
.0
0A
.5 1
15
A 1.0
0 50 mA
30 10
0mA
200
mA
10
p) eT em
1 00 mA
5
50mA
I B =20mA
0
5A 0 0
0.5
1.0
1.5
2.0
0.8
30
C (
Cas
I C =10A
125 C ( Cas 25C
e Te
mp)
1.6
2.4
3.2
(V C E =4V) 200 DC Cur rent Gain h F E DC Cur rent Gain h FE 200 125C 100
(V C E =4V)
j- a ( C/W)
2
Typ
100
25C
50
50
30C
0.5
10 0.02
0.1
0.5
10 17
10 0.02
0.1
0.5
10 17
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60 40

200
10 m s
P c T a Derating
10 Cu t-of f Fr eque ncy f T ( MH Z ) Collect or Cur ren t I C (A) 5
160
W ith
40
In
Ty
fin
120
ite he at
si nk
80
20
0 0.02
0.1
10
0.05 3
10
100
300
5 0
16
LAPT
2SA1303
20.0min 4.0max
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)


5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E

5.450.1
Collector-Emitter Saturation Voltage V C E (s a t) (V )
A A m m mA 00 00 00 3 5 4
3

(V C E =4V) 14
00 6 mA 00 m A
200
mA
1 50 m A
10
Tem
p)
10 0mA
se
Tem
125
C (C
I B =20mA
5A
0.2
0.4
0.6
0.8
1.0
25
30
C (
I C =10A
ase
Cas
50mA
(Ca
eT
emp
p)
(V C E =4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE 200 125C 100
(V C E =4V)
j- a ( C/W)
3
Typ
100
25C 30C
0.5
50
50
20 0.02
0.1
0.5
5 10 14
30 0.02
0.1
0.5
10 14
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

130
P c T a Derating
Maxim um Power Dissip ation P C (W)
1m s
10 m
10
Cut- off F req uency f T (MH Z )
60 Co lle ctor Cu rr ent I C (A)

Ty p
10
100
0m s
W ith
D
5
In fin ite he
40
at si nk
50
20
0.5
0 0.02
0.1
1 Emitter Current I E (A)
10
0.2 3
10
100
200
3.5 0
17
LAPT
2SA1386/1386A
Application : Audio and General Purpose External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) sAbsolute maximum ratings (Ta=25C) sElectrical Characteristics
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SA1386 2SA1386A 160 160 5 15 4 130(Tc=25C) 150 55 to +150 180 180 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB Symbol ICBO VCB= VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=2A VCB=10V, f=1MHz Conditions
(Ta=25C) Ratings Unit 2SA1386A 2SA1386 100max 160 160min 100max 180 100max 180min 50min 2.0max 40typ 500typ V MHz pF
A A
V
20.0min 4.0max 19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IB1 (A) 1 IB2 (A) 1 ton (s) 0.3typ tstg (s) 0.7typ tf (s) 0.2typ
5.450.1 B C E
5.450.1
5 m 00
3

15 (V C E =4V)
00
0 40
3 00 m A
200mA
10
10
150mA
p)
100mA
5
mp) e Te
eT
Cas
(Cas
C (
50mA
25C
I B =20mA
5A 0 0
0.2
0.4
0.6
0.8
1.0
125
I C =10A
30C
(Cas
e Te
mp)
em

j - a (C /W )
3
125C 100 25C 30C 50
1 0.5
100
Typ
10 0.02
0.1
0.5
5 10 15
20 0.02
0.1
0.5
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60 40

130
10 ms
P c T a Derating
10 Cut-o ff Fr eque ncy f T (MH Z )

Ty p
DC
Ma xim um Powe r Dissipation P C ( W)
100
40
Collecto r Cur ren t I C ( A)
ith In fin ite he at
1 0.5 Without Heatsink Natural Cooling 1.2SA1386 2.2SA1386A 0.1 1 2 200
si nk
50
20
0 0.02
0.1
10
0.05 3
10
50
100
3.5 0
18
2SA1488/1488A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) sAbsolute maximum ratings (Ta=25C)
Ratings Symbol 2SA1488 2SA1488A VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 6 4 1 25(Tc=25C) 150 55 to +150 80 80 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB

(Ta=25C)
Symbol ICBO VCB= VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=0.2A VCB=10V, f=1MHz Conditions
External Dimensions FM20 (TO220F)

4.00.2 10.10.2 4.20.2 2.8 c0.5
Ratings 2SA1488 2SA1488A 100max 100max 60 100max 60min 40min 80min 80
Unit
A A
V V MHz pF
2.54 2.20.2 16.90.3
8.40.2
13.0min
0.5max 15typ 90typ
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.40.2

3.9 B C E
0.2
0.80.2
a b
3.30.2
Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4

1.5

4 (V C E =4V)
8
3
0m
60m
A
50m A
40m A
30mA
1.0
I C =3A 2A 1A 0 0.1
I B =5mA
0.5
0.1
0.5
0.5
30C
125
25C
C (
10mA
(Cas
0.5
eT emp ) e Te mp) (Cas e Tem p)
20mA
Cas
1.0
1.5
(V C E =4V) 500 DC C urrent G ain h FE DC Curr ent Gain h FE 200 125C 100 25C 30C 50
(V C E =4V)
j - a ( C/W)
5
Typ
100
50
20 0.01
0.1
0.5
20 0.02
0.7
10 Time t(ms)
100
1000
60 (V C E =12V) 10 5 50 Cu t-off Fre quen cy f T ( MH Z ) Collect or Cur ren t I C (A)

30
1m
P c T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20
W ith In
10
40
Typ
DC
M aximu m Power Dissi pation P C (W)
100ms
30
fin
150x150x2
1 00x 1 0 10
0x 2
ite
he
at
20
si
nk
50x50x2
Without Heatsink 2
10
0.1 0.05 0.05 0.1 0.5 1 3 3 5 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
0 0.005 0.01
25
50
75
100
125
150
19
2SA1492
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 180 180 6 15 4 130(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E

VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1 IB2 (A) 1 ton (s) 0.6typ tstg (s) 0.9typ tf (s) 0.2typ
5.450.1
1

3

15 (V C E =4V)
0.
6A
0.
4A
0 .2
10
10
0 .1 A
mp) Temp )
Cas
(Case 25C
C (
I B =20mA
I C =10A 5A 0 0 0.5 1.0 1.5 2.0 0 0
30C
125
(Case
50mA
e Te
Temp)
(V C E =4V) 300 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 25C 100 30C
(V C E =4V) 125C
j - a (C/W)
3
Typ
100 50
1 0.5
50
10 0.02
0.1
0.5
5 10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 40

130
3m
P c T a Derating
Cut- off F re quen cy f T (MH Z )
10 Collector Cur rent I C (A)
10
m
s
0m
M aximum Power Dissipa ti on P C ( W)
10
Typ
20
100
W ith
In
fin ite he at si nk
1 0.5
50
10
0 0.02
0.1
10
0.1 3
10
100
200
3.5 0
20
2SA1493

20.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=0.5A VCB=10V, f=1MHz

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 5.450.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1

5A 1.
3

15 (V C E =4V)
0 60
mA
400 mA
200m
10
1 00 mA
10
eTe mp) Temp )
I B =5 0m A
5
C (
I C =15A 10A 5A 0 0 1 2 3 4 0 0
25C
30C
125
(CaseT
Cas
(Case
emp)
Collector-Emi tter Voltage V C E (V)
(V C E =4V) 300 DC C urrent G ain h FE

(V C E =4V) 200 DC C urrent G ain h FE 125C 25C 100 30C
j- a (C /W )
2
Typ
100 50
0.5
50
10 0.02
0.1
0.5
5 10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 30 50

160
3m
P c T a Derating
20
Typ
Cut- off F re quen cy f T ( MH Z ) Co lle ctor Cu rr ent I C ( A) 10 5
10
Maximu m Power Dissip ation P C (W)
s
0m
s 10ms
120
20
ith In fin ite he
80
at si nk
10
40
0 0.02
0.1 0.1 1 Emitter Current I E (A) 10 2 10 100 300 Collector-Emitter Voltage V C E (V)
5 0
21
2SA1494

20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 5.450.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

17
A .5 1

3 Collector-Emitter Saturation Voltage V C E (s at) (V )

1A
60
15
mA
40
0mA
200m
10
1 00 m A
10
e Te mp) Temp )
(Case 25C
50mA
I C =15A 10A 5A 0 0 1 2 3
125C
I B =20mA
30C
(Case
(Cas
Temp

j - a (C /W)
Typ
100 50
25C 100 30C
0.5
50
10 0.02
0.1
0.5
10 17
20 0.02
0.1
0.5
10 17
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 30 50

200
20 m
3m
P c T a Derating
10ms
Cut- off Fr equ ency f T (MH Z )
Typ
Collector Curr ent I C (A) 20
160
10 0m
10 5
ith
In fin
120
ite he at si nk
10
80
0 0.02
5 0
22
LOW VCE (sat)

sAbsolute maximum ratings (Ta=25C)
2SA1567
Application : DC Motor Driver, Chopper Regulator and General Purpose
13.0min
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) sElectrical Characteristics

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
mA 00
15 0m A

1.5

12 (V C E =1V)
I B=
10 0m A
60mA
1.0
I C= 12A
9A
40mA
Tem
mp) e Te
5mA
10
100
1000
3000
0.2
0.4
125
10mA
0.6
0.8
30C
25C
(Cas
(Cas
(Ca
20mA
0.5
se
e Te
mp)
6
p)
6A
3A
1A
1.0
1.2
Base Current I B (mA)

(V C E =1V) 500 125C D C Cur r ent Gai n h F E
j- a ( C/W)
4
30C
Typ
25C
100
100
50 30 0.02
50 30 0.02
0.5 0.3
0.1
10
0.1
10
10 Time t(ms)
100
1000
(V C E =12V) 50 30

35
1m s
P c T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm
10 Cut- off Fr equ ency f T (M H Z )
Typ
40 Collector Cur rent I C (A) 5
10
DC
0m
Maximu m Power Dissi pation P C (W)
30
10 m s
W ith
20
In fin
30
ite
he
150x150x2 100x100x2 10 50x50x2 Without Heatsink
at si nk
20
0.1 0 0.05 0.1 0.05 3
12
10
50
100
2 0
25
50
75
100
125
150
23
Built-in Diode at CE Low VCE (sat)
2SA1568
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=60V VEB=6V IC=25mA VCE=1V, IC=6A IC=6A, IB=0.3A IECO=10A VCE=12V, IE=0.5A VCB=10V, f=1MHz (Ta=25C) Ratings 100max 60max 60min 50min 0.35max 2.5max 40typ 330typ V V MHz pF
13.0min
( 250 )
Equivalent curcuit
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 +12 3 35(Tc=25C) 150 55 to +150 Unit V V V A A W C C
Application : DC Motor Driver, Chopper Regulator and General Purpose External Dimensions FM20 (TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
00 mA
15 0mA

1.4

12 (V C E =1V)
I B=
1 00 mA
10 1.0 Collector Current I C (A)
8
60mA
Tem
20mA
10mA
0 7 10
100 Base Current I B (mA)
1000
3000
0.2
0.4
0.6
0.8
30C
125
25C
(Cas
(Cas
(Ca
se
0.5
e Te
e Te
mp)
mp)
p)
40mA
0.2
0.80.2
a b
3.30.2
I C= 12 A
9A
6A
3 A
1A
1.0
1.2
(V C E =1V) 300

(V C E =1V) 300 125C D C Cur r ent Gai n h F E 100 25C 30C
j - a (C /W)
Typ
DC Curr ent Gain h F E 100
10
10
0.5 0.3
2 0.02
0.1
10
2 0.02
0.1
10
10 Time t(ms)
100
1000
50 (V C E =12V) 30

35
1m s
P c T a Derating
Typ
40 Collector Cur rent I C (A) 5
10
DC
0m
30
10 m s
W ith
20
In fin
30
ite
he
at si nk
20
0.1 0 0.05 0.1 0.05 3
10
10
50
100
2 0
25
50
75
100
125
150
24
2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) sAbsolute maximum ratings (Ta=25C)
Ratings Symbol 2SA1667 2SA1668 VCBO 150 200 VCEO VEBO IC IB PC Tj Tstg 150 6 2 1 25(Tc=25C) 150 55 to +150 200 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB
Application : TV Vertical Output, Audio Output Driver and General Purpose

(Ta=25C)
Symbol ICBO VCB= VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=0.2A VCB=10V, f=1MHz Conditions

4.00.2 10.10.2 4.20.2 2.8 c0.5
Ratings 2SA1667 2SA1668 10max 150 150min 10max 200 10max 200min 60min
Unit
A
V
A
V V MHz pF
16.90.3
8.40.2
13.0min
1.0max 20typ 60typ
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
2.0 Collector-Emitter Saturation Voltage V C E (s at) (V )
3

(V C E =10V) 2
5
0m
1.6
1.2
1.2
mp)
(Cas
0.8
I B =5mA/Step
0.8
Temp (Case 25C
e Te
125C
0.4
I C =2A
0 .5A
1A
0.4
10
10
100
1000
0.2
0.4
0.6
0.8
30C
(Case
Temp)
1.0
1.2
(V C E =10V) 400 D C Cur r ent Gai n h F E

(V C E =10V) 400 125C D C Cur r ent Gai n h F E 25C
j- a (C /W )
Typ
100
30C
100
40 0.01
30 0.01
0.5
10 Time t(ms)
100
1000
50 (V C E =12V) 5

25
1m 5m s
20 ms
P c T a Derating
M aximu m Power Dissipat io n P C (W)
Cut- off Fr equ ency f T (M H Z )
Typ
30
20
W ith In
150x150x2
1 00x 1 0 10
0x
fin ite he
20
0.1 Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668

1 2
at si nk
50x50x2
10
Without Heatsink 2 0
0 0.01
0.1 Emitter Current I E (A)
0.01 1
10
100
300
25
50
75
100
125
150
25
2SA1673

(Ta=25C) Ratings 10max 10max 180min 50min 2.0max 20typ 500typ V MHz
16.2
External Dimensions FM100(TO3PF)

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
1 A


15 (V C E =4V)
15
0. 6A
0.4
0 .2
10
10
0 .1 A
mp) Temp )
Cas
C (
(Case
50mA
I B =20mA
I C =10A 5A 0 0 0.5 1.0 1.5 2.0 0 0
30C (C
25C
125
ase Tem
e Te
p)
(V C E =4V) 300 DC Cur rent Gain h F E DC Cur rent Gain h FE 200 25C 100 30C
(V C E =4V) 125C
j - a ( C/W)
3
Typ
100 50
1 0.5
50
10 0.02
0.1
0.5
5 10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 40

100
3m
P c T a Derating
Typ
Collecto r Cur rent I C (A) 20
10 5
D C
10
M aximu m Power Dissip ation P C (W)
10
m
s
0m
80
60
2 1 0.5
40
10
0.2 0 0.02 0.1 3
0.1
10
10
100
200
3.5 0
26
3.0
W ith In fin ite he at si nk
2SA1693

20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1

VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 0.3 ton (s) 0.18typ tstg (s) 1.10typ tf (s) 0.21typ
6
2 0 0m A
0 15


6 (V C E =4V)
mA
00 m A
8 0m A
50mA
30mA
e Te mp) e Te mp)
Cas
20mA
1 I C =6A 4A 2A 0 0 0.5 1.0 1.5
I B =10mA
C (
(Cas
30C
25C
125
(Case
Temp

(V C E =4V) 300 DC Cur rent Gain h FE 125C 25C 100 30C
j- a ( C/W)
Typ
100
50
50
0.5 0.3
30 0.02
0.1
0.5
5 6
30 0.02
0.1
0.5
5 6
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 20

60
10
P c T a Derating
Typ
Cut -off Fre quen cy f T (M H Z ) Collector Curr ent I C (A)
5 20
100ms
10
W ith
DC
40
In fin ite he at si
nk
10
20
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 6 0.1 5 10 50 100 3.5 0 0 25 50 75 100 125 150
27
2SA1694

20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1

8
50
V CE ( s a t ) I B Characteristics (Typical)

8 (V CE =4V)
0m
A
1 5
A 0m
100 mA
7 5m A
50mA
4
mp) e Te
mp) e Te (Cas
25mA
Cas
1 I C =8A 4A 2A 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base Current I B (A)
0.5
30C
25C
125
I B =10mA
C (
(Cas
1.0
e Te
mp)
1.5

j - a ( C/W)
Typ
100
125C 25C 100 30C
50
50
0.5
30 0.02
0.1
0.5
30 0.02
0.1
0.5
5 8
0.3
10 Time t(ms)
100
1000
(V C E =12V) 30 20

80
10 m s
P c T a Derating
Typ
20 Co lle ctor Cu rren t I C (A)
DC
10 Cut- off F req uency f T (MH Z )
100ms
60
W ith In fin ite he
40
at si
nk
10
0.5 Without Heatsink Natural Cooling
20
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 12 5 150
28
2SA1695

20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1

10
4 00 mA


10 (V C E =4V)
A 0m
A 0m
15
0m
100
mA
7 5m A
50mA
4
25mA
mp) e Te
30C
Tem
(Ca
se
I B =10mA
5A 0 0 0.5 1.0 1.5 2.0 0 0
25C
125
I C =10A
(Case
(Cas
Temp
p)
1.5
(V C E =4V) 200 DC Curr ent Gain h F E 200 125C
(V C E =4V)
j- a ( C/W)
3
25C 100 30C
100
Typ
DC Curr ent Gain h F E
1 0.5
50
50
30 0.02
0.1
0.5
10
30 0.02
0.1
0.5
10
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 30

100
P c T a Derating
10 Cut-o ff F requ ency f T (MH Z )

10 0m
Maximu m Power Diss ip ation P C (W)
Co lle ctor Cu rren t I C ( A)
20
DC
ith
3m
In
Typ
fin
ite he
50
10 ms
at si nk
10
0 0.02
0.1
10
0.1 3
10
50
100
200
3.5 0
29
2SA1725

13.0min
External Dimensions FM20(TO220F)

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
16.90.3
8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
2 m 00 A
0 15 mA
V CE ( s a t ) I B Characteristics (Typical)
3

6 (V CE =4V)
1 00 m
8 0m A
50mA
30mA
p)
Tem
se
(Ca
se T
1 I C =6A 4A 2A 0 0 0.5 1.0 1.5
2
C
I B =10mA
1
125
(Ca
0.5
30C
25C
(Cas
e Te
20mA
emp
mp)
1.5
(V C E =4V) 300 D C Cur r ent Gai n h F E DC C urrent G ain h FE 300 125C 25C 100 30C
(V C E =4V)
j- a ( C/W)
5
Typ
100
50
50
30 0.02
0.1
0.5
5 6
30 0.02
0.5 0.4 1 10 100 Time t(ms) 1000 2000
0.1
0.5
5 6
(V C E =12V) 30 20 10

30
P c T a Derating
Typ
Cut -off Fre quen cy f T ( MH Z ) 5 20 Collecto r Cur ren t I C (A)
100ms
DC
10
W ith
20
In fin ite he
1 0.5
at si nk
10
10
Without Heatsink Natural Cooling 0.1 0 0.02 0.05 3
Without Heatsink 2 5 10 50 100 0
0.05 0.1
0.5
5 6
25
50
75
100
125
150
30
2SA1726

12.0min 4.0max

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
3.750.2
MHz
1.35

2.5 B C E
0.65 +0.2 -0.1 2.5 1.4

6
2 0 0m A
1 m 50
3 Collector-Emitter Saturation Voltage V C E (s at) (V)

6 (V CE =4V)
1 00 m
8 0m A
50mA
30mA
p)
Tem
se
(Ca
se T
1 I C =6A 4A 2A 0 0 0.5 1.0 1.5
2
C
I B =10mA
125
(Ca
0.5
30C
25C
(Cas
e Te
20mA
emp
mp)
1.5

(V C E =4V) 300 DC Cur rent Gain h FE 125C 25C 100 30C
j- a ( C/ W)
5
Typ
100
50
50
0.5 0.4 1 10 100 Time t(ms) 1000 2000
30 0.02
0.1
0.5
5 6
30 0.02
0.1
0.5
5 6
(V C E =12V) 30 20 10

50
10
P c T a Derating
Typ
Cu t-of f Fr eque ncy f T (MH Z ) 5 20 Collector Curr ent I C (A)
Ma xim um Powe r Dissipation P C (W)
100ms
40
W ith
DC
In fin
30
ite he
1 0.5
at si nk
20
10
Without Heatsink Natural Cooling 0.1 0 0.02 0.05 3
10 Without Heatsink 0 25 50 75 100 1 25 150
0.05 0.1
0.5
5 6
10
50
100
2 0
31
LOW VCE (sat)

Silicon PNP Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 70 50 6 12(Pulse20) 4 60(Tc=25C) 150 55 to +150 Unit V V V A A W C C
2SA1746
Application : Chopper Regulator, Switch and General Purpose
(Ta=25C) Ratings 10max 10max 50min 50min 0.5max 1.2max 25typ 400typ V V
16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=70V VEB=6V IC=25mA VCE=1V, IC=5A IC=5A, IB=80mA IC=5A, IB=80mA VCE=12V, IE=1A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35

1.5

12 (V C E =1V)
12mA
100 mA
10
70mA
8
50mA
1.0
8
p)
em
6
30m A
emp
(Ca
seT
I B =10mA
3A 1A 0 3 10
5A
1000
0.5
30C
I C =10A
25C
125
1.0
(Cas
0.5
(Ca
eTe
mp)
seT
(V C E =1V) 500 D C Cur r ent Gai n h F E 500 D C Cur r ent Gai n h F E
(V C E =1V)
j - a ( C/W)
4
Typ
25C
30C
125C
100
100
0.5
50 0.03
0.1
0.5
10
50 0.03
0.1
0.5
10
0.2
10
100 Time t(ms)
3.0
1.5
1000
40 (V C E =12V) 30

60
10 0
P c T a Derating
Cu t-of f Fr eque ncy f T (MH Z )
30
10
Typ
1m
10 m
Collector Curre nt I C (A)
40
ith In fin
20
ite he at si
20
nk
10
1 Without Heatsink Natural Cooling 0.3 3
Without Heatsink 0 0.1 1 Emitter C urrent I E (A) 10 10 50 100 3.5 0 0 25 50 75 100 125 150
32
2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) sAbsolute maximum ratings (Ta=25C)
Ratings Symbol 2SA1859 2SA1859A VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 6 2 1 20(Tc=25C) 150 55 to +150 180 180 Unit V V V A A W C C
Application : Audio Output Driver and TV Velocity-modulation

(Ta=25C)
Symbol ICBO VCB= IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.7A IC=0.7A, IB=70mA VCE=12V, IE=0.7A VCB=10V, f=1MHz Conditions

4.00.2 10.10.2 4.20.2 2.8 c0.5
Ratings 2SA1859 2SA1859A 10max 150 10max 150min 180min 60 to 240 1.0max 60typ 30typ 180
Unit
A A
V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
A

3

2 (V C E =4V)
0m
00
5mA
0m
10 mA
1
I B =5mA
1
mp)
0.2
0.80.2
a b
3.30.2
p)
Cas
C (
(Cas
I C =2A 0.5A 0 2 5 10 1A 50 100 500 1000 0 0
10
0.5 Base-Emittor Voltage V B E (V)
30C (C
25C
125
aseTem
eTe
eTem
p)

j - a ( C/W)
(V C E =4V) 300 125C DC Cur rent Gain h FE 7 5
Typ
25C
100
100
30C
50 0.01
0.1
0.5
50 0.01
0.1
0.5
10
100 Time t(ms)
1000 2000
(V C E =12V) 100 5

20
1m s
P c T a Derating
80 Cut -off Fre quen cy f T ( MH Z ) Collector Cur rent I C (A)
Typ
60
1 0.5
10 ms
10 0m s
W ith In fin ite he
10
at si nk
40
0.1 0.5 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A 1 5 10 2
20
0 0.01
0.05
0.1
0.5
0.01 1
50 100 200
2 0
33
LAPT
2SA1860
16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
A m mA mA mA 00 500 400 00 3 6

3

14 (V C E =4V)
00
mA
200
mA
1 50 m A
10
100 mA
10
p)
Tem
p)
se
50mA
C (C
125
0.2
0.4
0.6
0.8
1.0
30
5A
25
I B =20mA
C (
Cas
I C =10A
(Ca
ase
eT
Tem
emp
(V C E =4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE
(V C E =4V) 200 125C
j- a ( C/W)
3
100
Typ
100
25C 30C
1 0.5
50
50
20 0.02
0.1
0.5
10 14
30 0.02
0.1
0.5
10 14
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

80
1m s
P c T a Derating
Cu t-off Fre quen cy f T (M H Z )
10 60 Collect or Cur ren t I C (A)
10
0m
10
s
60
Typ
40
40
20
20
Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
10
0.05 2
34
3.0
2SA1907

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
6
2 0 0m
m 50

6 (V CE =4V)
A
1
1 00 m
8 0m A
50mA
30mA
p)
Tem
se
(Ca
se T
1 I C =6A 4A 2A 0 0 0.5 1.0 1.5
2
C
I B =10mA
1
125
(Ca
30C
25C
(Cas
e Te
20mA
emp
mp)
3.0
1.5
(V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 300 125C 25C 100 30C
(V C E =4V)
j- a ( C/W)
5
Typ
100
50
50
0.5 0.3
30 0.02
0.1
0.5
5 6
30 0.02
0.1
0.5
5 6
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 20 10

60
P c T a Derating
Typ
Cu t-of f Fr eque ncy f T ( MH Z ) Collecto r Cur rent I C ( A)
5
DC
10
10
0m
ms
1m
W ith
20
40
In fin ite he at si nk
10
20
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 6 0.1 5 10 50 100 3.5 0 0 25 50 75 100 125 150
35
2SA1908

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
8
2 m 00
m


8 (V C E =4V)
A
1
50
m 50
A
100 mA
7 5m A
50mA
4
mp) e Te
mp)
25mA
Cas
1 I C =8A 4A 2A 0 0 0.2 0.4 0.6 0.8 1.0
e Te
0.5
30C
25C
125
I B =10mA
C (
(Cas
(Cas
1.0
e Te
mp)
(V C E =4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 300
(V C E =4V)
j - a (C/W)
4
100
100
25C 30C
Typ
125C
50
50
0.5
30 0.02
0.1
0.5
5 8
30 0.02
0.2 0.1 0.5 1 5 8 Collector Current I C (A)
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 20 10

80
10
P c T a Derating
10
Cut-o ff Fr eque ncy f T ( MH Z )
Typ
Collector Curr ent I C (A) 20
0m
DC
60
40
10
20
0 0.02
0.05 0.1
0.5
0.1 5
10
50
100 150
3.5 0
36
3.0
1.5
2SA1909

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
10
4 m 00

3 Collector-Emitter Saturation Voltage V C E (s at) (V)

10 (V C E =4V)
m 00
m 00
A
0m A
15
100
mA
7 5m A
50mA
4
25mA
mp)
Tem
(Ca
e Te
se
25C
125
I B =10mA
5A 0 0 0.5 1.0 1.5 2.0 0 0
30C
I C =10A
(Case
(Cas
Temp
p)

(V C E =4V) 200 D C Cur r ent Gai n h F E 125C 100 25C 30C 50
j - a (C /W)
3
Typ
100
1 0.5
50
30 0.02
0.1
0.5
10
20 0.02
0.1
0.5
10
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 30

80
P c T a Derating
10
M aximum Po wer Dissipation P C (W)
60
Collector Curr ent I C (A)
20
Typ
40
10
20
Without Heatsink 0 0.02 0.1 1 10 0.1 3 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
3.0
1.5
10
10 0m s
ms
ith In fin ite he at si nk
37
2SA2042
Silicon PNP Epitaxial Planar Transistor sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 50 50 6
pulse20 10

(Ta=25C) Ratings 10max 10max 50min 130310 0.5max 60typ 375typ V MHz pF
13.0min
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB50V VEB6V IC25mA VCE2V, IC1A IC5A, IB0.1A VCE12V, IE0.5A VCB10V, f1MHz

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
3 30(Tc25C) 150 55 to 150
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
38
0.2
0.80.2
a b
3.30.2
(2 k )(6 5 0) E
Darlington
2SB1257
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=6mA IC=3A, IB=6mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 10max 10max 60min 2000min 1.5max 2max 150typ 75typ V V
16.2
B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A A
V
23.00.3 9.50.2
a b
MHz pF
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
6
A 3m
1 .8


4 (V C E =2V)
mA
IB
2.
1 .5 m A
1.2 mA
1.0mA
Temp
3A 1 I C =1A 2A
(Cas
(Case
125C
0.6 0.2
0.5
10
50
30C
25C
(Case
Temp
e Te
0.8mA
mp)
2 2.2
(V C E =2V) 8000 5000 DC Cur r ent Gai n h F E 8000
(V C E =2V) 5000 DC Cur r ent Gai n h F E
j - a ( C/W)
Typ
5
1000 500
1000 500
12
5C
25 C
3
100 50
0C
100 50 20 0.02 0.1 0.5 1 5 6
1 0.7
20 0.02
0.05 0.1
0.5
5 6
10 Time t(ms)
100
3.0
1000
240 (V C E =12V) 10

25
P c T a Derating
200 Cut- off F req uency f T (M H Z ) Co lle ctor Cu rre nt I C ( A)
Maxim um Power Dissipation P C (W)
5
10 m
DC
1m s
20
Typ
160
W ith In
120
150x150x2
1 00x 1 0 10
0x
fin ite he
0.5
at si nk
80
40 0.1 0 0.05 0.1 0.5 1 4 0.07 3
50x50x2
10
70
25
50
75
100
125
150
39
(3 k )(1 0 0) E
Darlington
2SB1258
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=100V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=6mA IC=3A, IB=6mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 10max 10max 100min 1000min 1.5max 2max 100typ 100typ V V MHz pF
13.0min
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
6
A 3.
4 2.


6 (V C E =4V)
4m
mA
2.0
mA
1 .8 m A
IB
1.2 mA
0.9mA
3
mp)
Temp
(Cas
125C
6A 4A 1 I C =2A 1
25C
0.6 0.5 1
100 200
30C
(Case
(Case
Temp
e Te
2 2.2
(V C E =4V) 8000 5000 DC Curr ent Gain h FE DC Curr ent Gain h FE
(V C E =4V) 8000 5000

12 5C C 25
j- a ( C/ W)
Typ
5
1000 500
1000 500
3
100 30 0.03
0C
80 0.03
0.1
0.5
0.1
0.5
0.5
10 Time t(ms)
100
1000
(V C E =12V) 120 20

30
P c T a Derating
Typ
100
10
50 0
Cu t-off Fr eque ncy f T ( MH Z )
5 80 Collector Cur rent I C (A)

DC
10 0
1m s
10 m s
W ith In fin
60
150x150x2 100x100x2 10 50x50x2
ite he at si
40
nk
20
0 0.05
0.1
0.5
5 6
0.05 3
25
50
75
100
125
150
40
(3 k )(1 0 0) E
Darlington
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 10(Pulse15) 1 30(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C
2SB1259
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=10mA IC=5A, IB=10mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 10max 10max 120min 2000min 1.5max 2.0max 100typ 145typ V V
13.0min
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2

3

10 (V C E =4V)
0m
0m
m 10
A
5m A
3m
10
2mA
6
) Temp
mp) (Cas e Te
30C
I C =10A 5A 1A
125C
0 0.2
10
100
1000
25C
(Case
(Case
I B =1mA
Temp
2 2.2
(V C E =4V) 20000 10000 D C Cur r ent Gai n h F E 5000

j - a (C /W)
(V C E =4V) 20000 10000 D C Cur r ent Gai n h F E 5000
12 5C C 25
5
Typ
1000 500
1000 500
0C
100 50
100 50 0.03
0.5 0.3
0.1
0.5
10
20 0.02
0.1
0.5
10
10 Time t(ms)
100
1000
(V C E =12V) 200 20

30
P c T a Derating
DC
Typ
10
1m
10 0 s
10 m s
W ith In
100
fin
150x150x2 100x100x2 10 50x50x2
ite he at si nk
0.05 0 0.05 0.1 0.5 1 5 10 0.03 3 5 10 50 100 200
Without Heatsink 2 0 0 25 50 75 100 125 150
41
(2 k )(1 0 0) E
Darlington
2SB1351
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Condition VCB=60V VEB=6V IC=10mA VCE=4V, IC=10A IC=10A, IB=20mA IC=10A, IB=20mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 10max 10max 60min 2000min 1.5max 2.0max 130typ 170typ V V MHz pF
13.0min
Silicon PNP Epitaxial Planar Transistor
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
0m

3

20 (V C E =4V)
6m
4 m A
3 mA
15
2m A
15
emp
eT
se T
C (
25C
125
0 0.1
10
100
30C
(Cas
1A
(Ca
5A
e Te
Cas
mp)
I B =1mA
I C =10A
emp
10
10
2.4
(V C E =4V) 20000 DC Cur rent Gain h FE 20000 DC Cur rent Gain h FE 10000
(V C E =4V)
j- a ( C/W)
5
10000
Typ
12
5000
25
C
C
5000
30
1000 500 0.3 0.5
0.5 0.3
1000 800 0.3
10
20
10
20
10 Time t(ms)
100
1000
240 (V C E =12V) 30

30
P c T a Derating
200 Cut-o ff F requ ency f T (MH Z ) Collecto r Cur ren t I C (A)
10 5
DC
160
Ma ximum Po we r Dissipatio n P C (W)
1m
10 m s
Typ
120
ith In fin
150x150x2 100x100x2 10 50x50x2
ite he at si
80
nk
40 0.1 0 0.05 0.1 0.05 2
0.5
10
20
25
50
75
100
125
150
42
(2 k )(1 0 0) E
Darlington
2SB1352
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=10A IC=10A, IB=20mA IC=10A, IB=20mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 10max 10max 60min 2000min 1.5max 2.0max 130typ 170typ V V
16.2
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
mA V
23.00.3 9.50.2
a b
MHz pF
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
6m A

3

20 (V C E =4V)
4 m A
3 mA
2m A
IB
10
15
15
emp
eT
se T
C (
25C
125
0 0.1
10
100
30C
(Cas
1A
(Ca
5A
e Te
Cas
mp)
1mA
I C =10A
emp
10
10
(V C E =4V) 20000 DC Cur rent Gain h FE 20000 DC Cur rent Gain h FE 10000
(V C E =4V)
j- a ( C/W)
5
10000
Typ
5000
25
C
C
5000
30
12
1000 500 0.3 0.5
0.5 0.3
1000 800 0.3
10
20
10
20
10 Time t(ms)
100
3.0
2.4
1000
240 (V C E =12V) 30

60
P c T a Derating
200 Cut-o ff F requ ency f T (MH Z ) Collecto r Cur ren t I C (A)
10 5
160
DC
1m
10 m s
40
Typ
120
ith In fin ite
he at si
80
20
nk
40 0.1 0 0.05 0.1 0.05 2
Without Heatsink 5 10 50 100 3.5 0 0 50 100 150
0.5
10
20
43
(2 k ) (80) E
Darlington
2SB1382
16.2
Application : Chopper Regulator, DC Motor Driver and General Purpose

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
mA
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35

3

16 (V C E =4V)
0m
m 20
A 12m
6 mA
12
2 I C =16A
Tem
emp
se
se T
8
C
I B =1.5m A
125
25C
4A
0 0.5
100
30C
(Cas
10
(Ca
8A
(Ca
e Te
mp)
3m A
p)
3.0
2.4

(V C E =4V) 20000 10000
j - a ( C/ W)
3
Typ
5000
12
5000
5C
25
C
C 30
0.5
1000 500 0.3
1000 500 0.3
0.5
10
16
0.5
10
16
0.2
10 Time t(ms)
100
1000
100 (V C E =12V) 50

80
1m
P c T a Derating
10
s
Typ
Cut- off F req uency f T (MH Z ) 10 Co lle ctor Cu rren t I C (A)
DC
10
60
W ith
In fin ite he
50
at
40
si nk
20
0 0.05 0.1
0.5
10
16
0.05 0.03 3
Without Heatsink 5 10 50 100 200 3.5 0 0 50 100 150
44
(2 k ) (80) E
Darlington
2SB1383
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 10max 10max 120min 2000min 1.8max 2.5max 50typ 230typ V MHz pF
5.450.1 B C E 20.0min 4.0max

(Ta=25C) Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A
mA V
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 5.450.1 0.65 +0.2 -0.1 1.4

8 .0 mA
6 .0 m A

3

25 (V C E =4V)
4 .0m A
I C =25A
20
20
15
15
mp Te )
2.5m A
em
p) eT Cas
30 C ( Cas
12
1.0mA
5
I B =0.6mA
0
0 0.5 1
100
500
25
C(
6A
5C
eT
1.5mA
(Ca
10
12A
10
emp
se
2.6
(V C E =4V) 20000 DC Cur rent Gain h FE 10000 20000 DC Cur rent Gain h FE 10000 5000
12 5C
25 C
(V C E =4V)
j- a ( C/W)
2
Typ
5000
0.5
30
1000 500 200 0.2
1000 500 200 0.2
0.5
10
40
0.5
10
40
0.1
10 Time t(ms)
100
1000
(V C E =12V) 60 100

120
P c T a Derating

1m
Typ
50 100
W ith
10
Co lle ctor Cu rre nt I C (A)
40
10 5
DC
In
fin ite he
30
at si nk
50
20
10
0 0.1
0.5
10
0.2 3
10
50
100
200
3.5 0
45
(2 k ) (80) E
Darlington
2SB1420
20.0min 4.0max

(Ta=25C) Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A
mA
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
Collector-Emitter Saturation Voltage V C E (s at) (V) 26
0 2
3

16 (V CE =4V)
0m
A 12m
6 mA
12
2 I C =16A
Tem
emp se T (Ca
30C
se
8
C
I B =1.5m A
125
0 0.5
100
25C
4A
(Cas
10
8A
(Ca
e Te
mp)
3m A
p)
2.4
(V C E =4V) 20000 DC Cur rent Gain h F E 10000 DC Cur rent Gain h F E 20000 10000
(V C E =4V)
j - a (C /W )
3
Typ
5000
12
5000
5C
25
C
C
0 3
0.5
1000 500 0.3
1000 500 0.3
10
16
0.5
10
16
0.2
10 Time t(ms)
100
1000
100 (V C E =12V) 50

80
1m
m s
10 0
P c T a Derating
Typ
Cut-o ff F requ ency f T (MH Z ) 10 Collecto r Cur ren t I C (A) 5
DC
M aximum Po we r Dissipatio n P C (W)
10
60
W ith In fin ite he
50
40
at si nk
20
0.1 0.05 0.03 3
0 0.05 0.1
0.5
10
16
Emitter Current I E (A )
46
(7 0 ) E
Darlington
2SB1559
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min 2.5max 3.0max 65typ 160typ V V MHz pF
20.0min 4.0max 3
Equivalent circuit
Application : Audio, Series Regulator and General Purpose

(Ta=25C) Unit
5.00.2

15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
0.65 +0.2 -0.1 1.4

m A


8 (V C E =4V)
mA
.5
10
2.0
mA
1 .8 m
A 1 .5 m 1. 3m A
1 .0 mA
0.8m A
8A 6A I C =4A
0.5m A
4
p) Tem
emp se T (Ca
(Ca
se
I B =0.3mA
2
25C
125
0 0.2
0.5 1
10
50 100 200
30
C (
Cas
e Te
mp)
(V C E =4V) 40,000 DC C urrent G ain h FE DC Cur rent Gain h FE 50000 125C
(V C E =4V)
j - a ( C/W)
4
Typ
25C 10000 30C 5000
10,000
5,000
0.5
2,000 0.2
0.5
1000 0.2
0.2 0.5 1 5 8 Collector Current I C (A)
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 100 20 10 Cut -off Fre quen cy f T ( MH Z ) 80 Collector Curre nt I C (A)

80
10
0m s
P c T a Derating
Typ
60
10
60
W ith In fin ite he
40
at si nk
40
20
20
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 0.05 2 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
47
(7 0 ) E
Darlington
2SB1560
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=2A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min 2.5max 3.0max 50typ 230typ V V MHz pF
20.0min 4.0max 3
Equivalent circuit

(Ta=25C) Unit
5.00.2 1.8

15.60.4 9.6 2.0 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
0.65 +0.2 -0.1 1.4

Collector-Emitter Saturation Voltage V C E (s at ) (V )
mA

3

10 (V C E =4V)
10
A 5m
2 .0
mA
10
1 .5m A
1. 2mA
1.0 mA
0.8m A 0.6m A
10A 7A I C =5A 1
mp)
e Te
I B =0.4mA
Temp (Case 25C
0 0.2
0.5 1
10
50 100 200
30C
125C
(Case
(Cas
Temp
2.5
(V C E =4V) 40,000 DC Curr ent Gain h F E DC Curr ent Gain h F E 50000
(V C E =4V)
j - a ( C/W)
3
Typ
125C 10000 5000
10,000 5,000
25C 30C
1 0.5
1000 1,000 0.2 0.5 1 Collector Current I C (A) 5 10 500 0.2 0.5 1 Collector Current I C (A) 5 10
0.1
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 100 30

100
P c T a Derating
80 Cut- off F req uency f T (M H Z ) Co lle ctor Cu rre nt I C ( A)
10 5
10
DC
0m
10
W ith In fin
60
Typ
ite he
50
at si nk
40
20
0 0.02
0.05 0.1
0.5
10
0.05 3
10
50
100
200
3.5 0
48
(7 0 ) E
Darlington
2SB1570
20.0min 4.0max
Equivalent circuit

(Ta=25C) Unit

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1


3

12 (V C E =4V)
0 1
2 .0 m A
2 .0m A
1.5 mA
1.2m A
1.0 mA
0.8m A
10A 7A I C =5A 1
6
mp) e Te (Cas
125C
(Cas 25C
0 0.2
0.5 1
10
50 100 200
30C
(Case
I B =0.4mA
e Te
mp) Temp )
0.6mA
2.5
(V C E =4V) 40,000 D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 50000 125C
(V C E =4V)
j- a ( C/W)
2
Typ
25C 10000 30C 5000
10,000 5,000
0.5
0.1
1,000 0.2
0.5
1012
1000 800 0.2
0.5
10 12
10
50
100
500 1000
2000
Time t(ms)
(V C E =12V) 100 30

160
P c T a Derating
80 Collecto r Cur rent I C (A)
10 5
10
0m
10
DC
120
W ith In fin
60
Typ
ite he
80
at si nk
40
40
20
0 0.02
0.05 0.1
0.5
10
0.05 3
10
50
100
200
5 0
49
(7 0 ) E
Darlington
2SB1587
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min 2.5max 3.0max 65typ 160typ V V pF
16.2
Equivalent circuit

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
MHz
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
m A


8 (V C E =4V)
mA
.5
10
2.0
mA
1 .8 m
A 1 .5 m 1. 3m A
1 .0 mA
0.8m A
8A 6A I C =4A
0.5m A
4
p) Tem
emp
se
(Ca
se T
I B =0.3mA
2
(Ca
125
25C
0 0.2
0.5 1
10
50 100 200
30
C (
Cas
e Te
mp)
(V C E =4V) 40,000 DC Curr ent Gain h F E DC C urrent G ain h FE 50000 125C
(V C E =4V)
j- a ( C/W)
4
25C 10000 30C 5000
10,000
Typ
5,000
0.5
2,000 0.2
0.5
1000 0.2
0.2
0.5
10
50 100 Time t(ms)
500 1000
3.0
2000
(V C E =12V) 100 20 10 Cut- off F req uenc y f T (MH Z ) 80 Collecto r Cur rent I C (A)

80
10
0m s
P c T a Derating
Typ
60
10
60
W ith In fin ite he
40
at si nk
40
20
20
0 0.02
0.05
0.1
0.5
0.05 2
10
50
100
200
3.5 0
50
(7 0 ) E
Darlington
2SB1588
16.2
Equivalent circuit

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
MHz
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35

mA


10 (V C E =4V)
10
m .5
2 .0
mA
10
1 .5m A
1. 2mA
1.0 mA
0.8m A 0.6m A
10A 7A I C =5A 1
mp)
I B =0.4mA
e Te
Temp
0 0.2
0.5 1
10
50 100 200
30C
25C
125C
(Case
(Case
(Cas
Temp
(V C E =4V) 40,000 DC Cur rent Gain h FE DC Cur rent Gain h FE 50,000
(V C E =4V)
j - a ( C/W)
3
Typ
125C 10,000 5,000
10,000 5,000
25C 30C
0.5
1,000 1,000 0.2 0.5 1 Collector Current I C (A) 5 10 500 0.2 0.5 1 5 10
0.1
10
50 100 Time t(ms)
500 1000
3.0
2.5
2000
(V C E =12V) 100 30

80
P c T a Derating
80 Cut -off Fre quen cy f T (M H Z ) Co lle ctor Cu rre nt I C (A)
10 5
DC
10
0m
10
60
ith In fin
60
Typ
ite he
40
at si nk
40
20
20
0 0.02
0.05 0.1
0.5
10
0.05 3
10
50
100
200
3.5 0
51
(7 0 ) E
Darlington
2SB1647
20.0min 4.0max 2 3
Equivalent circuit

(Ta=25C) Unit
5.00.2 2.0 1.8

15.60.4 9.6 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
0.65 +0.2 -0.1 1.4

15
2 m A
1.5mA


15 (V C E =4V)
50mA 10mA 3mA
1 .0m A
0.8 mA
10
0. 5m A
10
p) Tem
I C =15A
emp se T (Ca
I C =1 0A
I C =5A
(Ca
125
25C
0 0.2
0.5 1
10
50 100 200
30
C (
Cas
e Te
I B =0.3mA
mp)
se
50,000 DC C urrent G ain h FE
(V C E =4V) 50000 DC C urrent G ain h FE 125C 25C 10000 5000 30C
(V C E =4V)
j- a ( C/ W)
3
Typ
10,000 5,000
0.5
1,000 0.2
0.5
10 15
1000 0.2
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60

50
10
P c T a Derating
130
10
Cut -off Fre quen cy f T (MH Z )
10 40 Collect or Cur ren t I C ( A) 5
0m
DC
100
50
20
0.1 0 0.02 0.05 0.1 0.5 1 5 10 0.05 3 5 10 50 100 200 3.5 0 0
52
( 7 0 ) E
Darlington
2SB1648
20.0min 4.0max
Equivalent circuit

(Ta=25C) Unit

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
A A
V
a b
MHz pF
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1

0m A 1


17
mA
3mA
2mA
15
50
1 .5 m A
1.0 mA 0.8 mA
I C =15A
10
0.5mA
5C
p) Tem ase
30 C (
I B =0.3mA
5
0 0.2
0.5 1
10
50 100 200
25
C (C
Cas
I C =5A
eT
emp
12
I C =1 0A
(Ca
se
10
Te
mp
50,000 DC Curr ent Gain h FE
(V C E =4V) 50000 DC Curr ent Gain h FE 125C 25C 10000 5000 30C
(V C E =4V)
j - a ( C/W)
2
Typ
10,000 5,000
0.5
1,000 0.2
0.5
10
17
1000 0.2
0.5
10
17
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60

50
10
P c T a Derating
200
Cut- off F req uenc y f T (MH Z )
10 40 Co lle ctor Cu rre nt I C (A) 5
0m
10
DC
160
W ith In fin
120
ite he at si nk
1 0.5
80
20
0.1 0 0.02 0.05 0.1 0.5 1 5 10 0.05 3 5 10 50 100 200 5 0
53
(7 0 ) E
Darlington
2SB1649
16.2
Equivalent circuit

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
MHz
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
15
2 m A
1.5mA

15 (V CE =4V)
50mA 10mA 3mA
1 .0m A
0.8 mA
10
0. 5m A
10
p)
I C =15A
Tem
emp
I C =1 0A
I C =5A
(Ca
125
25C
0 0.2
0.5 1
10
50 100 200
30
C (
Cas
(Ca
eT e
I B =0.3mA
seT
mp)
se
3.0
50,000 DC Curr ent Gain h F E
(V C E =4V) 50000 DC Curr ent Gain h F E 125C 25C 10000 5000 30C
(V C E =4V)
j - a (C /W)
3
Typ
10,000 5,000
0.5
1,000 0.2
0.5
10 15
1000 0.2
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 60 50

100
10
0m s
P c T a Derating
10
Cut- off F req uency f T (M H Z )
10 Collect or Cur re nt I C ( A) 40 5
DC
80
W ith In
60
fin ite he at
si nk
40
20
0.1 0 0.02 0.05 0.1 0.5 1 5 10 0.05 3 5 10 50 100 200 3.5 0
54
( 7 0 ) E
Darlington
2SB1659
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min 2.5max 3.0max 100typ 110typ V V MHz pF
12.0min 4.0max
Equivalent circuit

(Ta=25C) Unit

3.00.2 10.20.2 4.80.2 2.00.1
A A
16.00.7
8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 B C E 2.5 1.4

A m 1

6 (V CE =4V)
6
A 5m
m .5
.4m
A
0 .3 m A
0. 2m A
5A
Tem
emp
se
(Ca
125
25C
0 0.1
0.5 1
5 10
50 100
30
C (
Cas
(Ca
seT
eT e
mp)
I B =0. 1mA
I C =3A
p)

(V C E =4V) 50000 125C
j- a ( C/W)
Typ
10000 5000
25C 10000 5000 30C
1000 500 200 0.02
1000 500
0.5 0.4 1 10 100 Time t(ms) 1000 2000
0.05 0.1
0.5
5 6
100 0.02
0.05 0.1
0.5
5 6
(V C E =12V) 120

50
P c T a Derating
100 Cu t-off Fr eque ncy f T (MH Z )
Typ
40
W ith
80
In fin
30
ite he
60
at si nk
20
40
20
0 0.02
0.05
0.1
0.5
5 6
2 0
55
(7 0 ) E
Darlington
2SB1685
20.0min 4.0max 3
Equivalent circuit

(Ta=25C) Unit
5.00.2 1.8

15.60.4 9.6 2.0 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
0.65 +0.2 -0.1 1.4

Collector-Emitter Saturation Voltage V C E (s at ) (V ) 6
A 5m
A m 5mA 1 0. A .4m 0
0 .3 m A

3

(V C E =4V) 6
0. 2m A
2 5A
4
p) Tem
emp se T (Ca
30C
)
(Cas e Te mp)
125
(Ca
I C =3A
se
I B =0. 1mA
0 0.1
0.5 1
5 10
50 100
25C
(V C E =4V) 50000 D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 50000
(V C E =4V) 125C
j- a ( C/W)
5
10000 5000
Typ
10000 5000
25C 30C
1000 500
1000 500
Transient Thermal Resistance 5 6
0.5 1 5 10 50 100 500 1000 2000
100 0.01
0.05 0.1
0.5
5 6
100 0.01
0.05 0.1
0.5
Time t(ms)
(V C E =12V) 120 20 10 5 Co lle ctor Cu rre nt I C (A)

60
P c T a Derating
Typ
100 Cut-o ff Fr equ ency f T (M H Z )
10
10
ith
80
DC
1 0.5
0m
40
In fin ite he
60
at si nk
40
20
20
0.1
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 6 0.05 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
56
(7 0 ) E
Darlington
2SB1686
13.0min
Equivalent circuit

(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
16.90.3
8.40.2
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
A m 1


(V C E =4V) 6
6
A 5m
5m
.4 0
mA
0 .3 m A
0. 2m A
2 5A
4
p)
Tem
emp se T (Ca
30C
)
(Cas e Te mp)
125
(Ca
I C =3A
se
I B =0. 1mA
0 0.1
0.5 1
5 10
50 100
25C
0.2
0.80.2
a b
3.30.2
(V C E =4V) 125C
j- a ( C/W)
5.0
10000 5000
Typ
10000 5000
25C 30C
1.0
1000 500
1000 500
0.5 0.3
100 0.01
0.05 0.1
0.5
5 6
100 0.01
0.05 0.1
0.5
5 6
10 Time t(ms)
100
1000
(V C E =12V) 120 20 10 100 Cut-o ff Fr equ ency f T (MH Z )

30
P c T a Derating
Typ
10 0m
10
s
W ith
80
20
In fin ite he
60
at
si nk
40
10
20
0 0.02
0.05
0.1
0.5
5 6
0.05 3
10
50
100
200
25
50
75
100
125
150
57
(7 0 ) E
Darlington
2SB1687
16.2
Equivalent circuit

(Ta=25C) Unit
External Dimensions FM100(TO3P)

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
MHz pF
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8
5.450.1 1.5
0.65 +0.2 -0.1
3.35

A m


(V C E =4V) 6
6
A 5m
5 0.
.4 0
mA
0 .3 m A
0. 2m A
2 5A
4
p)
Tem
emp
se T
(Ca
(Ca
125
25C
0 0.1
0.5 1
5 10
50 100
30C
(Cas
e Te
I C =3A
se
I B =0. 1mA
mp)
(V C E =4V) 50000 DC Cur rent Gain h F E DC Cur rent Gain h F E 50000
(V C E =4V) 125C
j- a ( C/W)
5
10000 5000
Typ
10000 5000
25C 30C
1000 500
1000 500
0.5 1 10 100 Time t(ms) 1000 2000
100 0.01
0.05 0.1
0.5
5 6
100 0.01
0.05 0.1
0.5
5 6
(V C E =12V) 120 20 10 5 Collector Curre nt I C (A)

60
P c T a Derating
Typ
10
10 0m s
80
DC
40
1 0.5
60
40
20
20
0.1
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 6 0.05 5 10 50 100 150 3.5 0 0 25 50 75 100 125 150
58
3.0
2SC2023
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 300 300 6 2 0.2 40(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C
2.5 B C E
Application : Series Regulator, Switch, and General Purpose

(Ta=25C) Ratings 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V pF
12.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12A, IE=0.2A VCB=10V, f=1MHz

3.00.2 10.20.2 4.80.2 2.00.1
Unit mA mA V
16.00.7 8.80.2
a b
3.750.2
MHz
1.35
0.65 +0.2 -0.1 2.5 1.4

VCC (V) 100 RL () 100 IC (A) 1.0 VB2 (V) 5 IB1 (mA) 100 IB2 (mA) 200 ton (s) 0.3typ tstg (s) 4.0typ tf (s) 1.0typ
2
I 200 B= mA

2 (V CE =4V)
mp)
e Te
I B =2 0m
25C (C
125C
(Cas
A /s to p
I C =1A 0 0 0.1 0.2
2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0
(V C E =4V)
j - a (C /W )
5
100
Typ
100
125
25C
50
50
30
0.5
10 3 10 100 Collector Current I C (mA) 1000 2000
10 3
10
50
100
500 1000 2000
0.2
30C (C
ase Tem
ase Te
p)
mp)
10
100 Time t(ms)
1000 2000
Collector Current I C (mA)
(V C E =12V) 20 10 5 Cut-o ff F requ ency f T (MH Z )

40
P c T a Derating
Typ
D C
Ma ximum Po we r Dissipatio n P C ( W)
1m s
5m s
20 ms
W ith
1 0.5
In fin ite he
10
20 150x150x2 100x100x2 10 50x50x2 Without Heatsink
at si nk
0.1 0.05 Without Heatsink Natural Cooling
0 0.003
0.02 0.01 0.05 0.1 Emitter Current I E (A) 0.5 1 2 10 100 500 Collector-Emitter Voltage V C E (V)
2 0
25
50
75
100
125
150
59
LAPT
2SC2837
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) sAbsolute maximum ratings (Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=3V IC=5A, IB=0.5A VCE=12V, IE=1A VCB=80V, f=1MHz

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
m 400


10 (V CE =4V)
10
300m
A
A
200m
A 160m
6
12 0m A
80mA
as
eT
12
0.5
1.0 Base Current I B (A)
1.5
2.0
30
25
5A
5C
(Ca
I B =20mA
(C
se
Tem
I C =10A
em
40mA
p)
p)
(V C E =4V) 200 DC Curr ent Gain h FE D C Cur r ent Gai n h F E
(V C E =4V) 200 125C
j - a ( C/W)
3
100
Typ
100
25C 30C
Transient Thermal Resistance 0.5 1 5 10
50
50
0.5
20 0.02
0.1
10
20 0.02
0.05
0.1
0.2
10
100 Time t(ms)
1000 2000
120 (V C E =12V) 30

100
10
P c T a Derating
100 Cu t-off Fr eque ncy f T ( MH Z ) 10
m s
Typ
80
Collector Curre nt I C ( A)
ith
In
fin ite he
60
50
at si nk
40
20
0.5
0 0.02
0.2 0.1 1 6 2 10 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
3.5 0
60
LAPT
2SC2921
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215)


36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1

0m
60 0m

15 (V CE =4V)
15
500
mA
400
mA
300 mA
75
10
15 0m A
200m
10
10 0m A
p)
as
eT
1 I C =10A 5A 0
5
(C 5C
12
0.2
0.4
0.6
0.8
1.0
30
25
I B =20mA
(Ca
se
Tem
50mA
em
p)
(V C E =4V) 200 DC Cur rent Gain h F E DC Cur r ent Gai n h F E 200 125C 100
(V C E =4V)
j - a ( C/W)
2
Typ
100
25C 30C
50
0.5
50
10 0.02
0.1
0.5
10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 80

40 160
10
P c T a Derating
Typ
60 Collector Curr ent I C (A) 10
D C
120
W ith In fin
ite he
40
80
at si nk
20
40
0.5 0 0.02 0.3 0.1 1 10 2
10
100
200
5 0
61
LAPT
2SC2922
20.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8V IC=8A, IB=0.8A VCE=12V, IE=2A VCB=10V, f=1MHz

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

VCC (V) 40 RL () 4 IC (A) 10 VB2 (V) 5 IB1 (A) 1 IB2 (A) 1 ton (s) 0.2typ tstg (s) 1.3typ tf (s) 0.45typ
1.5
1A


17 15 (V CE =4V)
17
A
0 70
mA
600
15
mA mA 500 A 400m
30 0mA
A
200m
10
10
em
p) as (C 5C
100 mA
0.2
0.4
0.6
0.8
1.0
25
30
I B =20mA
12
5A
(Ca
50mA
se
Tem
eT
I C =10A
p)
2.4
(V C E =4V) 200 DC C urrent G ain h FE DC Cur rent Gain h F E 200 125C 100 25C 50 30C
(V C E =4V)
j - a ( C/W)
2
100
Typ
50
0.5
10 0.02
0.1
0.5
10
17
10 0.02
0.1
0.5
10 17
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 80 50

200
P c T a Derating
10 m s
Cut -off Fre quen cy f T ( MH Z )
160
60
Collector Cur rent I C (A)
Typ
10 5
DC
W ith In fin
120
ite he
40
at si nk
80
20
0 0.02
0.2 0.1 1 5 10 2 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
5 0
62
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25C)
2.5 B C E

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 100max 100max 60min 40min 0.6max 15typ 60typ

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V V pF
12.0min 16.00.7 8.80.2
a b
3.750.2
4.0max
MHz
1.35
0.65 +0.2 -0.1 2.5 1.4

0 0m A
80m A

4 (V CE =4V)
IB
=1
60mA
40mA 30mA
2
20mA
1.0
2
p) em
) mp Te se C(
eT
(C
12
25
I C =1 A
0 0.005 0.01
0.05
0.1
0.5
0 0.4
0.6
0.8
30
2A
5C
10mA
(Ca
Ca
3A
as
se
Te
0.5
mp
1.0
1.2
(V C E =4V) 500 D C Cur r ent Gai n h F E DC Curr ent Gain h FE 200 125C 100 25C 30C 50
(V C E =4V)
j- a ( C/W)
5
Typ
100
50
20 0.01
0.1
0.5
20 0.02
0.1
0.5
0.5
10 Time t(ms)
100
1000
40 (V C E =12V) 10

30
1m
P c T a Derating
5 Cut- off F req uency f T (M H Z ) 30 Co lle ctor Cu rre nt I C ( A)

D C
Maximu m Power Dissipa tion P C (W)
10 m
10 0m s
W ith
20
In fin ite he
20
Typ
at si nk
10
10
0.5
Without Heatsink 2 0 0.005 0.01 0.2 0.1 0.5 1 4 3 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 0 0 25 50 75 100 125 150
63
LAPT
2SC3263
20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), Y(70 to 140)

5.450.1 B C E
5.450.1
0A 3.


15 (V C E =4V)
15
2.
0A
1.
5A
1.0
A
600 mA
10
200m A
400
mA
10
eT em p Tem ) p)
10 0m A
as
se
(C
Ca
5C
C(
25
5A 0 0
0.5
1.0
1.5
2.0
30
I B =20mA
12
(Ca
se
50mA
I C =10A
Tem
p)
(V C E =4V) 200 DC Curr ent Gain h F E DC C urrent G ain h FE 200 125C 100 100
(V C E =4V)
j - a ( C/W)
3
Typ
25C 30C
1 0.5
50
50
10 0.02
0.1
0.5
10 15
10 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 100 40

130
P c T a Derating
10
80 Cut- off F req uenc y f T (MH Z ) 10
100
Typ
60
DC
ith
40
50
20
Without Heatsink 0 0.02 0.1 0.1 1 10 3 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 3.5 0 0 25 50 75 100 125 150
64
LAPT
2SC3264
20.0min 4.0max

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(50 to 100), Y(70 to 140)

0 3. A
2. 0A


(V C E =4V) 17 15
17
1.5 A
1.0 A
A
15
400m
10
600m
A 200m
10
p) em
10 0m A
C (
50mA
I B =20mA
0
5A 0 0
0.5
1.0
1.5
2.0
25C
30C
125
(Cas
I C =10A
Cas
e Te
eT
mp)
(V C E =4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 125C 100 100 50
(V C E =4V)
j- a ( C/W)
3
Typ
50
25C 30C
1 0.5
10 10 0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 100 40

200
10 m
P c T a Derating
80 Cut-o ff Fr eque ncy f T ( MH Z )
10
DC
160
W ith
Typ
60
Co lle ctor Cu rren t I C ( A)
In fin
120
ite he at si nk
40
80
20
40
0 0.02
0.1 0.1 1 10 3 10 100 300 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
5 0
65
LAPT
2SC3284
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)


5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
0m
400 mA
3 A 00m


14 (V C E =4V)
14
A 0m 60 mA 00 5
12
75
200m
15 0m A
10
10 0m A
em
as
12
5A 0 0
0.2
0.4
0.6
0.8
1.0
30
25
I B =20mA
5C
I C =10A
(Ca
(C
se
eT
Tem
50mA
p)
p)
(V C E =4V) 200 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C 100 100
(V C E =4V)
j- a ( C/W)
3
Typ
25C 30C
1 0.5
50
50
20 0.02
0.1
0.5
10 14
20 0.02
0.1
0.5
10 14
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

130
1m
10
P c T a Derating
Typ
60 Collector Curre nt I C ( A) 10 5
10
0m
100
W ith
In fin ite he
40
at si nk
50
20
0 0.02
0.1
10
0.2 3 10 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
3.5 0
66
LAPT
Ratings Symbol 2SC3519 2SC3519A VCBO 160 180 VCEO VEBO IC IB PC Tj Tstg 160 5 15 4 130(Tc=25C) 150 55 to +150 180
2SC3519/3519A
(Ta=25C) Ratings 2SC3519 2SC3519A 100max 160 160min 180 100max 180min 50min 50typ 250typ MHz pF
5.450.1 B C E 20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) sAbsolute maximum ratings (Ta=25C)
Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=2A VCB=10V, f=1MHz
Symbol ICBO VCB= Conditions

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A
V
19.90.3
4.0
A
V V
a b
3.20.1
2.0max
2 3 1.05 +0.2 -0.1 5.450.1 0.65 +0.2 -0.1 1.4

m 00


15 (V C E =4V)
15
A 0m 70
6
500
mA
m 400
A
mA
300
10
200m
10
10 0m A
p)
em
eT
as
50mA
(C
12
0.2
0.4
0.6
0.8
1.0
30
25
I B =20mA
5A
(Ca
se
Te
mp
I C =10A
(V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 300
(V C E =4V)
j- a ( C/W)
3
125C 100 25C 50 30C
100
1 0.5
Typ
50
10 0.02
0.1
0.5
10 15
10 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

130
10 ms
P c T a Derating
10 Cut-o ff F requ ency f T (MH Z ) 60 Co lle ctor Cu rr ent I C (A)
Typ
DC
100
W ith In fin ite he
40
at
1 0.5 Without Heatsink Natural Cooling 1.2SC3519 2.2SC3519A 0.1 1 2 200
si nk
50
20
Without Heatsink 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
10
0.05 5
10
50
100
Emitter C urrent I E (A)
67
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 3(Pulse6) 1.5 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=0.3A VCB=10V, f=1MHz Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
V V V MHz pF
4.0
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.5 ton (s) 1max tstg (s) 5max tf (s) 1max
5.450.1 B C E
5.450.1
3
V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V) Base-Emitter Saturation Voltage V B E (s at) (V)

3 (V CE =4V)
500mA
400mA
300mA
1
p) 55C (Case Tem
25C (Cas e Temp)
Temp)
V B E (sat) Collector Current I C (A)
200 mA
2
mp)
mp) 25C (C ase Te
2 5 Cas eT C e m p)
55
V C E (sat) 0 0.02 0.05 0.1 0.5 1
12
5C
0.2
0.4
0.6
0.8
55C (C
I B =50mA
125C
(Cas
125C
ase Tem
100mA
(Case
e Te
p)
1. 0
1.2
(V C E =4V) 50 125C D C Cur r ent Gai n h F E 25C 8
j - a (C /W )
t on t st g t f ( s)
t on t stg t f I C Characteristics (Typical)
3
5 t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:1Const. 1 0.5 t on 0.2 0.1 0.5 1 3
55C
Switching T im e
tf
10
0.5
5 0.01
0.05
0.1
0.5
0.3
10
50 Time t(ms)
100
500 1000

10 10
Reverse Bias Safe Operating Area

80
P c T a Derating
10
5
s
60
W ith
Collecto r Curr ent I C (A)
In fin ite he
1 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
40
at si nk
0.5
20
0.1 50
100
500
1000
0.1 50
100
500
1000
3.5 0
Without Heatsink 0 25 50 75 100 12 5 150
68
2SC3679
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 5(Pulse10) 2.5 100(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

(Ta=25C)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V V MHz pF
20.0min 19.90.3
4.0
a b
3.20.1
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 1 ton (s) 1max tstg (s) 5max tf (s) 1max
5.450.1 B C E
5.450.1
5

(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V)

5 (V CE =4V)
700mA
600mA
500mA
300mA
400 mA
3
mp)
Temp (Case 25C
200mA
e Te
I B =100mA
Te m p) 25 C 5 5 C
V C E (sat) 0 0.03 0.05 0.1 0.5
C 125C (
as
10
0.2
0.4
0.6
0.8
55C (C
55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas
125C
(Cas
V B E (sat)
ase Tem
p)
1.0
1.2
(V C E =4V) 50 10
j - a ( C/W)
t on t s t g t f ( s)
2
DC Cur rent Gain h F E
125C
25C
t s tg V C C 250V I C :I B1 :I B 2 =2:0.3:1Const.
55C
Swi tchi ng T im e
0.5
1 0.5 t on 0.2 0.1 0.5
tf
10
5 0.02
0.05
0.1
0.5
0.1
10 Time t(ms)
100
1000

20 10 5 Collector Curre nt I C ( A)
10
10
1m

20 100
P c T a Derating
0m
10
10
10
ith
DC ( Tc
In fin
1 0.5
1 0.5
ite
=2 5 C)
he
50
at si nk
0.1 0.05
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than1%
0.01 5
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
69
2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25C)

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Ratings
Unit
A A
19.90.3
4.0
V V MHz pF
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
7

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5)

7 (V CE =4V)
1A
700m A
6
500mA
1
55C (C
25C (C
V B E (sat)
ase Temp)
p)
mp)
300 mA
ase Tem
Temp (Case
emp
(C
12
V C E (sat) 0 0.02 0.05 0.1 0.5 1
25
as
5C
5 7
0.2
0.4
0.6
0.8
55C (C
eT
25C
I B =100mA
125C
(Cas
125C
(C
ase Tem
200mA
emp ase T
e Te
p)
1.0
1.2
(V C E =4V) 50 D C Cur r ent Gai n h F E 10
j - a ( C/W)
5

2
12
V C C 250V I C :I B1 :I B2 =2:0.3:1Const.
25C
t s tg
55C
Swi tchi ng T im e
0.5
1 0.5 t on 0.2 0.1
tf
10
5 0.02
0.05
0.1
0.5
0.5
0.1
10 Time t(ms)
100
1000

20 10 5 Collecto r Cur rent I C (A)
10

20 120
P c T a Derating
1m
10
10 5 Co lle ctor Cu rre nt I C ( A) 100

W ith In fin
1 0.5
1 0.5
ite he at si nk
50
0.1 0.05
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
0.01 2
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
70
2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C)
(Ta=25C) Unit mA

3.00.2 10.20.2 4.80.2 2.00.1
A
16.00.7
V V MHz pF
8.80.2
a b
3.750.2
12.0min
4.0max
1.35
0.65 +0.2 -0.1 2.5 B C E 2.5 1.4

VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.2 IB2 (A) 0.4 ton (s) 1max tstg (s) 4.5max tf (s) 0.5max
6
1A
80 0m A

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 2

6 (V C E =4V)
60 0m A
400 mA
300mA
3
V B E (sat) 1
p) 55C (Case Tem Temp) 25C (Case
125C (C ase Tem p)
3
mp
200mA
2
I B =100mA
(C as 2 5 e Te m p) C
emp se T
se
(Ca
(Ca 25C
12
V C E (sat) 0 0.02 0.05 0.1 0.5 1
0.2
0.4
125
0.6
0.8
55C
(Cas
e Te
Te
mp)
1.0
1.2
1.4
(V C E =4V) 50 DC Cur rent Gain h F E
j - a ( C/W)
7 5
4
125C
25C
V C C 200V I C :I B1 :I B 2 =10:1:2 1 0.5
t s tg
Swi tchi ng T im e
55C
10
t on
0.5 0.3
tf 0.1 0.2 0.5 1 5 6
5 0.02
0.05
0.1
0.5
5 6
10 Time t(ms)
100
1000

20 10 5
10

20 50
P c T a Derating
10
10 5 Collector Curr ent I C (A) M aximum Power Dissipa ti on P C (W) 40

W ith
1m s
ms
In
D C
fin
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=0.5A Duty:less than 1%
30
ite he at si nk
20
0.1 0.05 0.02 7
0.1 0.05 0.02 50
10
50
100
500 600
100 Collector-Emitter Voltage V C E (V)
500 600
2 0
71
2SC3831
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1 . 3 max 8typ 105typ
(Ta=25C) Ratings Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
mA
A
4.0
V V MHz pF
19.90.3
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
10
A .2
1A

(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V)

10 (V CE =4V)
=1
800 mA
V B E (sat) 1
55C (Cas
25C (C
e Temp)
p)
400 mA
ase Tem
IB
60 0m A
6
p) Tem
Te
(Ca
se
mp
4
C
(Cas 25C
e Te
200mA
(C a
125
100mA
2
12
C 5
25
2
C
V C E (sat) 0 0.02 0.05 0.1 0.5 1
10
0.2
0.4
0.6
0.8
55C
(Case
se
Temp
125C
(Case
mp)
) Temp
1.0
1.2
(V C E =4V) 50
125C
j- a ( C/W)
10

2
D C Cur r ent Gai n h F E
25C
5 5C
5 V C C 200V I C :I B 1 :I B 2 =10:1:2 1 0.5 t on
t s tg
10
Switching T im e
0.5
tf 0.1 0.2 0.5 1 Collector Current I C (A) 5 10
5 0.02
0.05
0.1
0.5
10
0.1
10 Time t(ms)
100
1000

30
1m
10
10 0 s

30 100
P c T a Derating
5 Collecto r Curr ent I C (A)

D C
5 Co lle ctor Cu rr ent I C (A)
Maxim um Power Dissipatio n P C ( W)
10
10
ms
ith In fin ite
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH I B 2 =0.5A Duty:less than 1%
he
50
at si nk
0.1 0.05
1 0.05 0.01 50
0.02 8 10
50
100
500 600
500 600
3.5 0
72
2SC3832
(Ta=25C) Unit

3.00.2 10.20.2 4.80.2 2.00.1
A A
V V MHz pF
2.5 12.0min 4.0max 16.00.7 8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 B C E 1.4

VCC (V) 200 RL () 66.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max
7
0m


7 (V C E =4V)
60 0m A
80
6 Collector Current I C (A) V B E (sat) 1

55C (Cas
25C (Cas
125C
400mA
300mA
e Temp)
200mA
e Temp)
Temp )
as e 2 5 Tem p) C
4
Tem p)
) emp se T (Ca
125
25C
12
C 5
V C E (sat) 0 0.02 0.05 0.1 0.5 1
5 7
0.2
0.4
0.6
0.8
55C
(C
(Cas
I B =100mA
(Ca
e Te
se
(Case
mp)
1.0
1.2
(V C E =4V) 50
j - a ( C/W)
10

t o n t s t g t f ( s)
4
25C
V C C 200V I C :I B1 :I B 2 =10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 5
30 C
125 C
t s tg
Sw it ching Time
10
0.5 0.3
5 0.02
0.05
0.1
0.5
10 Time t(ms)
100
1000

20
10

20 50
P c T a Derating
10 5 Collecto r Curr ent I C (A)
10 5 Co lle ctor Cu rren t I C ( A)
40
W ith In fin
30
ite he at si
1 Without Heatsink Natural Cooling L=3mH IB2=1A Duty:less than 1%
nk
20
0.5
0.5
0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V)
0.1 5
10
50
100
500
2 0
73
2SC3833
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=1A VCB=10V, f=1MHz
(Ta=25C) Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V MHz pF V Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A A
V
19.90.3
4.0
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.7 IB2 (A) 1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max
5.450.1 B C E
5.450.1
12

Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5)

12 (V CE =4V)
A 1000m
80 0m A
60 0m A
10 1
55C (Case 25C (Cas
125C (C
V B E (sat)
8
400m A
Temp)
p) Tem
e Temp)
as e 2 5 Temp ) C
(Cas
(Ca
200mA
I B =100mA
2
12
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5
10
0.2
0.4
0.6
0.8
55C
25C
125
(C
1.0
(Case
Temp
e Te
se
emp ase T
mp)
1.2
(V C E =4V) 50 8
j - a ( C/W)
5
t on t st g t f I C Characteristics (Typical)
2
125C
DC C urrent G ain h FE
t s tg V C C 200V I C :I B1 :I B2 =10:1:2 1 0.5 t on
25C
30C
10
Swit ching Time
0.5
tf 0.1 0.5 1 Collector Current I C (A) 5 10
5 0.02
0.05
0.1
0.5
10 12
0.1
10 Time t(ms)
100
1000

30
10

30 100
P c T a Derating
5 Collecto r Curr ent I C (A)
5 Co lle ctor Cu rr ent I C ( A)
10
10
10
1ms
DC c= (T 25
ms
W ith In fin
1 0.5
ite
C )
1 0.5
he
50
at si nk
0.1 0.05
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1A Duty:less than 1%
0.01 5
10
50
100
500
3.5 0
74
2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Application : Humidifier, DC-DC Converter, and General Purpose

(Ta=25C) Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF
2.5 B C E 12.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=0.5A VCB=10V, f=1MHz

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 1.4

m 200 A

2.6

7 (V CE =4V)
A 50m 100 mA
6 Collector Current I C (A) 2
5
60mA
40m A
4
p) Tem
mp) (Cas e Te
(Ca
se
20 mA
3
C
1 0 0.005 0.01
0.05
0.1
0.5
30C
I B =10mA
25C
125
(Case
Temp
5A
3A
I C= 1 A
1.0 1.1
(V C E =4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 300

1 2 5 C
(V C E =4V)
j- a ( C/W)
4
Typ
100
100
25
30
50
50
0.5
20 0.02
0.1
0.5
20 0.01
0.05
0.1
0.5
5 7
0.3
10 Time t(ms)
100
1000
(V C E =12V) 30 20 10 Cut- off F req uency f T (M H Z ) 5 Collector Curr ent I C (A) 20

10
P c T a Derating
50
0m
40
W ith
10 ms
In fin
30
ite he
at si nk
20
10
0.1 0 0.01 0.05 0.05 0.1 0.5 1 5 5 10 50 120 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
2 0
75
2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25C)

20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
2 A 00m

2.6

7 (V C E =4V)
A 50m 100 mA
6 Collector Current I C (A) 2
5
60mA
40m A
4
p) Tem
mp) (Cas e Te
(Ca
se
20 mA
3
C
1 0 0.005 0.01
0.05
0.1
0.5
30C
I B =10mA
25C
125
(Case
Temp
5A
3A
I C= 1 A
1.0 1.1

1 2 5 C
(V C E =4V)
j - a ( C/W)
5
Typ
100
100
25
30
50
50
0.5 0.4 1 10 100 Time t(ms) 1000 2000
20 0.02
0.1
0.5
20 0.01
0.05
0.1
0.5
5 7
(V C E =12V) 30 20 10 Cut-o ff Fr equ ency f T (MH Z ) 5 Co lle ctor Cu rre nt I C (A) 20

10
P c T a Derating
70
60
W
10 ms
50
ith In fin ite
40
he
at si nk
30
10
20
0.1 0 0.01 0.05 0.05 0.1 0.5 1 5 5 10 50 120 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
10 Without Heatsink 3.5 0 0 25 50 75 100 125 150
76
2SC3851/3851A
Ratings Symbol 2SC3851 2SC3851A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 4 1 25(Tc=25C) 150 55 to +150 100 80 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=0.2A VCB=10V, f=1MHz
Application : Audio and PPC High Voltage Power Supply, and General Purpose
(Ta=25C)
Symbol ICBO VCB= 80 100max 60min 80min 40 to320 0.5max 15typ 60typ Conditions

4.00.2 10.10.2 4.20.2 2.8 c0.5
Ratings 2SC3851 2SC3851A 100max 100
Unit
A A
V V MHz pF
2.54 2.20.2 16.90.3
8.40.2
13.0min
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.40.2

VCC (V) 12 RL () 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 200 IB2 (mA) 200 ton (s) 0.2typ tstg (s) 1typ tf (s) 0.3typ
3.9 B C E

4 (V CE =4V)
0m
60 m A
50mA
IB
=7
3
30mA
40mA
1.0
Tem
emp
) se T (Ca
p)
20mA
0.2
0.80.2
a b
3.30.2
(Ca
10mA
I C =1 A
0 0.005 0.01
0.05
0.1
0.5
30C
5mA
2A
25C
125
(Cas
3A
e Te
0.5
mp)
se
1.0
1.2
(V C E =4V) 500 DC Curr ent Gain h FE DC Curr ent Gain h FE 500
(V C E =4V)
j - a (C/W)
5
125C
25 C
Typ
100
100
3 0 C
50
50
20 0.01
0.1
0.5
20 0.01
0.05
0.1
0.5
0.5
10 Time t(ms)
100
1000
40 (V C E =12V) 10

30
1m 10
0m
P c T a Derating
10

DC
5 Cu t-off Fr eque ncy f T ( MH Z )
20
ith In fin
1 0.5
ite
20
Typ
he at si nk
10
10
Without Heatsink Natural Cooling 0.1
0 0.005 0.1 0.5 1 4 Emitter Current I E (A)
0.05 Collector-Emitter Voltage V C E (V)
50
100
150
77
High hFE LOW VCE (sat)

Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25C)
Ratings Symbol 2SC3852 2SC3852A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 3 1 25(Tc=25C) 150 55 to +150 100 80 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB
2SC3852/3852A
Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
(Ta=25C) Ratings 2SC3852 2SC3852A 10max 80 100max 60min 500min
13.0min
Symbol ICBO VCB= VEB=6V IC=25mA VCE=4V, IC=0.5A IC=2A, IB=50mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Conditions

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A A
16.90.3
100 80min
V V V MHz pF
8.40.2
0.5max 15typ 50typ
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54

VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 15 IB2 (mA) 30 ton (s) 0.8typ tstg (s) 3.0typ tf (s) 1.2typ
3.9 B C E
3
IB =1 2m

Collector-Emitter Saturation Voltage V C E (sa t) (V ) 1.0

(V CE =4V) 3
A
8mA
5mA
2
3mA 2mA
1.0
p) em
0.2
0.80.2
a b
3.30.2
mp) e Te (Cas
Cas
0.5mA
2A
I C =1A
0 0.001 0
0.005 0.01
0.05
0.1
0.5
30C
3A
25C
125
1mA
C (
0.5
(Case
Temp
eT
1.0 1.1
(V C E =4V)
j - a ( C/W)
5
125C
25 C
1000
Typ
1000
500
500
3 0 C
1 V CB =10V I E =2A 1 10 Time t(ms) 100 1000
100 0.01
0.1
0.5
100 0.01
0.1
0.5
0.5
30 (V C E =12V) 10

30
1m
P c T a Derating
10
0m
10
20
DC
20
ith In
Typ
fin
1 0.5
ite he at si nk
10
10
Without Heatsink 3 5 50 100 0
0 0.005 0.01
0.05 0.05 0.1 0.5 1 2 10 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
50
100
150
78
2SC3856

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=0.5A VCB=10V, f=1MHz 100max 100max 180min

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Ratings
Unit
A A
19.90.3
4.0
V V pF
50min 2.0max 20typ 300typ MHz
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
1A
m 00 A


15 (V C E =4V)
15
7
0 50
mA
300m A
20 0m A
10
100 mA
10
mp)
e Te
Cas
C (
25C
I B =20mA
I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
30C
125
(Case
50mA
(Cas
e Te
Temp)
mp)
(V C E =4V) 300 D C Cur r ent Gai n h F E DC C urrent G ain h FE 200 125C 100 25C
(V C E =4V)
j- a ( C/W)
3
1 0.5
100
Typ
50
50
30C
20 0.02
0.1
0.5
10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 40

10
3m
P c T a Derating
130
0m
Cut -off Fre quen cy f T ( MH Z )
10 20 Collecto r Cur ren t I C (A)

D C
Maxim um Power Dissi pation P C (W)
Typ
10
100
W ith In
fin ite he at si nk
1 0.5
50
10
Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 10 0.1 3 10 100 200 3.5 0 0 25 50 75 100 125 150
79
2SC3857

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=5A IC=10A, IB=1A VCE=12V, IE=0.5A VCB=10V, f=1MHz Ratings 100max 100max 200min

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
50min 3.0max 20typ 250typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1

1.
1A


15 (V CE =4V)
5A
15
0 60
mA
400m
20 0m A
10
10
10 0m A
p)
Tem
se
I C =15A 10A 5A 0 0 1 2 Base Current I B (A) 3 4 0 0
25C
30C
125
(Case
I B =50mA
(Ca
Temp
(V C E =4V)
j- a ( C/W)
2
125C
Typ
100
100
25C
0.5
50
50
30C
20 0.02
0.1
0.5
10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 40 50

160
20
P c T a Derating
3m
m s
Cu t-off Fre quen cy f T ( MH Z )
30 Co lle ctor Cu rre nt I C ( A)
D
10 5
10ms
120
10 0m
W ith
Typ
In fin ite he
20
80
at si nk
10
40
0 0.02
5 0
80
2SC3858

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz 100max 100max 200min

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
Ratings
Unit
A A
V
a b
50min 2.5max 20typ 300typ V MHz pF
20.0min
4.0max
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

5A


17 15 (V C E =4V)
17 15
1.
1A
0 70
mA
500
mA
300m
20 0m A
10
100mA
10
p)
Tem
125
I B =20mA
10A 5A 0 0 1 2 3 0 0
30C
25C
I C =15A
(Case
(Ca
50mA
se
Temp
(V C E =4V) 300 DC C urrent G ain h FE DC C urrent G ain h FE 200 125C 100 25C 50 30C
(V C E =4V)
j - a ( C/W)
2
100
Typ
0.5
50
20 0.02
0.1
0.5
10 17
10 0.02
0.1
0.5
10 17
0.1
10
100 Time t(ms)
1000
2000
(V C E =12V) 30 50

200
20 m s
3 10 ms m s
P c T a Derating
Typ
Cu t-off Fre quen cy f T ( MH Z ) 10 5
160
10 0m s
W ith
20
Co lle ctor Cu rre nt I C ( A)
In fin
120
ite he at si nk
80
10
0 0.02
5 0
81
2SC3890
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)

4.00.2 10.10.2 4.20.2 2.8 c0.5
(Ta=25C) Unit
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 200 RL () 66 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max
2.54
3.9 B C E
7

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5)

7 (V C E =4V)
800
mA
600m
6 Collector Current I C (A) V B E (sat) 1

55C (Cas
25
I B=
40 0m A
300 mA
4
200 mA
e Temp)
Tem
p)
Temp) C (Case
(Case T emp)
as e 2 5 Tem p) C
4
) emp se T 25C (Ca
0.2
0.80.2
a b
3.30.2
125
12
C 5
V C E (sat) 0 0.02 0.05 0.1 0.5 1
5 7
0.2
0.4
0.6
0.8
55C
(C
(Cas
100mA
(Ca
e Te
125C
se
mp)
1.0
1.2
(V C E =4V) 70 DC Cur rent Gain h FE 50
j - a ( C/W)
7 5
5
Typ
V C C 200V I C :I B1 :I B 2 =10:1:2 1 0.5
t s tg
Swi tchi ng T im e
t on
10 7 0.02 0.05 0.1 0.5 1 5 7
0.5 0.3
tf 0.1 0.2 0.5 1 5 7
10 Time t(ms)
100
1000

20 10 5 Co lle ctor Cu rre nt I C (A) Collector Curr ent I C (A)
10

20 10 30
P c T a Derating
M aximu m Power Dissi pation P C (W)
W ith
20
In fin ite he at si
nk
0.5
0.5
10
Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150
82
2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)

(Ta=25C) Ratings 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1

10
1. 2A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5)

10 (V CE =4V)
1A
80 0m A
60 0m A
55C (Cas
25C (C
e Temp)
p)
400m A
ase Tem
V B E (sat) 8
6
p)
mp
eT
200mA
125C
(Case 25C
Cas
(C a
I B =100mA
125
C (
12
25
C 5
2
C
V C E (sat) 0 0.02 0.05 0.1 0.5 1
55
10
0.2
0.4
0.6
0.8
55C
(Case
se
Te
Temp)
em
(Case
Temp
Temp
1.0
1.2
(V C E =4V) 50 10

j- a ( C/W)
2
125 C
25 C
5 V C C 250V I C :I B1 :I B 2 =10:1.5:3
t s tg
5 5 C
Swit ching Time
1 0.5 t on tf 0.1 0.2 0.5 1 Collector Current I C (A) 5 10
0.5
10
5 0.02
0.05
0.1
0.5
10
0.1
10 Time t(ms)
100
1000

20 10 5 Co lle ctor Cu rr ent I C (A)
DC
10

20 120
P c T a Derating
M aximu m Power Dissipa tion P C (W)
ms
1m
10
10
0 s
100
W ith In fin ite
1 0.5
1 0.5
he at si nk
50
0.1 0.05 0.02 10
0.1 0.05 0.02 50
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1% 100 500 1000
50
100
500 600
3.5 0
83
2SC4020
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 3(Pulse 6) 1.5 50(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

2.5 B C E 12.0min 4.0max
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=0.3A VCB=10V, f=1MHz

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 1.4

VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.35 ton (s) 1max tstg (s) 5max tf (s) 1max
3
50 0 mA
40 0m A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 2 (I C /I B =5)

3 (V C E =4V)
300m A
200 mA
140mA
100mA
mp) e Te
1 V B E (sat)
25C (C
I B =20mA
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2
(V C E =4V) 50 125C DC C urrent G ain h FE 25C 30C 10
j- a ( C/W)
6 5
5
VCC 250V IC:IB1: IB2=2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 1 3
t s tg
Sw it ching Time
0.5 0.3
2 0.02
0.05
0.1
0.5
10
100 Time t(ms)
30C (C
60mA
125C
(Cas
mp) ase Tem p)
ase Te
1000 2000

10 10

50
P c T a Derating
5
10 0
40
W ith
In fin
30
ite he
at si nk
20
0.5
0.1 50
100
500
1000
0.1 50
100
500
1000
2 0
84

2SC4024
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
(Ta=25C) Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ V MHz pF
13.0min

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) 0.1 ton (s) 0.5typ tstg (s) 2.0typ tf (s) 0.5typ
2.54
3.9 B C E
I B =35m A

1.5

10 (V CE =4V)
25mA
20m A
15mA 10mA
1.0
30mA
6
) mp
0.2
0.80.2
a b
3.30.2
emp se T (Ca
25C
5mA
125
5A
3A
I C= 1 A
0 0.002
0.01
30C
(Cas
10A
(Ca
0.5
e Te
se
mp)
Te
0.5
1.0
1.2
(V C E =4V) 1000 DC C urrent G ain h FE 1000 DC C urrent G ain h FE

1 2 5 C
(V C E =4V)
j- a ( C/W)
4
Typ
500
500
25C
30
0.5 0.3
100 0.02
0.1
0.5
10
100 0.02
0.1
0.5
10
10 Time t(ms)
100
1000
(V C E =12V) 30 30

40
1m s
P c T a Derating
10
Cut- off Fr equ ency f T (MH Z )
10 Co lle ctor Cu rre nt I C ( A) 20
10
0m
DC
Typ
W ith In
20
fin ite he at
10
150x150x2 10 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75
si nk
0.5
0 0.05 0.1
0.2 0.5 1 5 10 3 5 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
100
125
150
85
LOW VCE (sat)

2SC4064
Application : DC Motor Driver and General Purpose
13.0min
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) sElectrical Characteristics

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E

1.3

12 (V CE =1V)
20
100m A
10
60mA
8
40mA
p) se C (Ca Tem
25C
20mA
0.5
12A
10mA
I B =5mA
9A
I C= 1 A
3A
6A
0.8
1.6
2.4
3.2
4.8
5.6 6
0 0.002
0.01
30C
125
(Cas
e Te mp) (Case Temp )
0.2
0.80.2
a b
3.30.2
1.0 1.1

(V C E =1V) 1000
j - a ( C/W)
5
125C
Typ
D C Cur r ent Gai n h F E 500
25C
3 0C
100 50
100 50
0.5 0.3
20 0.02
0.1
10 12
20 0.02
0.1
10 12
10 Time t(ms)
100
1000
(V C E =12V) 30 30

40
1m s
P c T a Derating
Typ
10 Collector Curr ent I C (A) 5
10
0m
20
DC
10 m s
W ith In
1 0.5
20
fin ite he at
10
si nk
Without Heatsink Natural Cooling 0.1 0 0.05 0.1 0.05 0.5 1 5 10 12 3 5 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
100
125
150
86
Built-in Diode at CE Low VCE (sat)
2SC4065
(Ta=25C) Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ V V MHz PF
13.0min
Equivalent circuit B
( 400 )
Application : DC Motor Driver and General Purpose External Dimensions FM20(TO220F)

4.00.2 10.10.2 4.20.2 2.8 c0.5
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=60V VEB=6V IC=25mA VCE=1V, IC=6A IC=6A, IB=1.3A VECO=10A VCE=12V, IE=0.5A VCB=10V, f=1MHz
Unit
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
1.3

12 (V CE =1V)
0m
20
m 50
100m A
60mA
8
40mA
6
p) se (Ca Tem C
(Cas 25C
12A
I B =10mA
2
6A
I C =1 A
3A
9A
0 0.005 0.01
30C
125
(Cas
20mA
0.5
e Te mp) e Tem p)
1.0 1.1
(V C E =1V) 400 400
(V C E =1V)
5 12 C
C
j - a ( C/W)
Typ
DC Cur rent Gain h F E 100 50
5
100 50
25
10 5 3 0.02 0.1 1 Collector Current I C (A) 10 12
10 5 3 0.02 0.1 1 Collector Current I C (A) 10 12
0.5
0.2
10 Time t(ms)
100
1000
(V C E =12V) 30 30

40
1m s
P c T a Derating
Typ
10 Collector Curre nt I C (A) 5
10
0m
20
DC
10 m s
W ith
1 0.5
20
In fin ite he
10
150x150x2 10 100x100x2 50x50x2 Without Heatsink 2 0
at si nk
Without Heatsink Natural Cooling 0.1 0 0.05 0.1 0.05 0.5 1 5 10 12 3 5 10 50 100 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
25
50
75
100
125
150
87
2SC4073

4.00.2 10.10.2 4.20.2 2.8 c0.5
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 30typ
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
5
m
60 0m A
400 mA

(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V)

(V C E =4V) 5
300m A
IB
=8
00
2 4
200mA
V B E (sat) 1
55C (Case Temp) p) 25C (Case Tem e Temp) 125C (Cas
12
5
Tem
emp
se T (Ca
se
as
V C E (sat) 0 0.01 0.05 0.1 0.5 1
55
0.2
0.4
125
0.6
25C
0.8
55C
(C
25
50mA
(Ca
(Cas
eT
e Te
100mA
emp
) mp)
p)
0.2
0.80.2
a b
3.30.2
1.0
1.2
1.4
(V C E =4V) 50 5
j- a ( C/W)
t on t s tg t f ( s)
125C DC Curr ent Gain h FE 25C 55C
5
V C C 200V I C :I B 1 :I B 2 =10:1:2 1 0.5 t on tf 0.1 0.1
t s tg
Switching Ti me
10
0.5 0.3
5 0.01
0.05
0.1
0.5
0.5
10 Time t(ms)
100
1000

20 10 5
10
1m s
10

20 10 30
P c T a Derating
Co lle ctor Cu rren t I C (A)
ith
20
In fin
1 0.5
D C
ite
1 0.5
he at si nk
10
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=0.5A Duty:less than1%
2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0
88
2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)

(Ta=25C)

4.00.2 10.10.2 4.20.2 2.8 c0.5
Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 15typ 50typ
Unit
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
7


7 (V C E =4V)
IB
=1
40
0m
10 00 m A
60 0m A
400mA
4
mp) e Te (Cas 55C
) mp se Te 5C
200 mA
em
50mA
p) C
V C E (sat) 0 0.02 0.05 0.1 0.5
(C 125C
as
5 7
0.2
0.4
0.6
25
25
12
C (C
(Ca
0.8
ase
100m A
55C (Case Temp) p) 25C (Case Tem e Temp) 125C (Cas
Tem
p)
V B E (sat)
0.2
0.80.2
a b
3.30.2
1.0
1.2
j- a ( C/W)
125C 25C 55C 5
4
V C C 200V I C :I B 1 :I B2 =10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1
t s tg
10
Swit ching Time
0.5 0.3
2 0.02
0.05
0.1
0.5
10 Time t(ms)
100
1000

20 10 5 Collect or Cur ren t I C (A)
DC
10
1m s
10 0

20 10 5 Collector Curr ent I C (A) M aximum Power Dissipa ti on P C (W) 30
P c T a Derating
W ith
20
In fin
1 0.5
1 0.5
ite he at si nk
0.1 0.05
10
Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 2 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0 0 25 50 75 100 125 150
89
LOW VCE (sat)

2SC4131
Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose
(Ta=25C) Ratings 10max 10max 50min 60 to 360 0.5max 1.2max 18typ 210typ V V
16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=100V VEB=15V IC=25mA VCE=1V, IC=5A IC=5A, IB=80mA IC=5A, IB=80mA VCE=12V, IE=1A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35

1.3

15 (V C E =1V)
85mA
80mA
1.0
40mA
12
10
25mA
mp
15mA
(Ca
I B =7mA
(Ca
10A
I C =1 A
3A
0 0.002
0.01
125
5A
30C
25C
(Cas
se T
se
e Te
Te
15A
emp
0.5
mp)
0.5
1.0
(V C E =1V)
j - a ( C/W)
3
500
Typ
500
2 5 C
3 0 C
12 5 C
0.5
100 70 0.02 0.1 1 Collector Current I C (A) 10 15
100 70 0.02 0.1 1 Collector Current I C (A) 10 15
0.3
10 Time t(ms)
100
3.0
1.5
1000

5 t stg V C C 20V I C =5A I B1 =I B 2 =80mA Collecto r Curr ent I C (A) 40

60
1m
P c T a Derating
10
DC
10
0m
10 m s
40
1 tf 0.5
ith
Switching Time
In fin ite he at si
20
nk
1 t on Without Heatsink Natural Cooling 0.4 0.5 1 5 10 3 5 10 50 100 Collector C urrent I C (A) Collector-Emitter Voltage V C E (V)
Without Heatsink 3.5 0 0 50 100 150
0.1 0.08 0.1
90
2SC4138
Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=0.7A VCB=10V, f=1MHz 100max 100max 400min
A A
19.90.3
4.0
V V MHz pF
10 to 30 0.5max 1.3max 10typ 85typ V
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
10
1.2 A
1A

Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.4 (I C /I B =5)

10 (V C E =4V)
600 mA
8 1 Collector Current I C (A)
400mA
6
mp )
V B E (sat)
emp se T
55C
)
(Cas e Te mp)
(Ca C
se
200m A
Te
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2
(V C E =4V) 100 10
j- a ( C/W)
t o n t s tg t f ( s)
3
DC Cur rent Gain h FE
50
125C
25C
55C
V C C 200V I C :I B1 :I B 2 =10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 t on
t s tg
Switching Ti me
10
0.5
5 0.02
0.05
0.1
0.5
10
0.3
10 Time t(ms)
25C
125
I B =100m A
(Ca
100
1000

30
1m

30 80
P c T a Derating
10
s
10 Collecto r Curr ent I C (A) Collecto r Cur ren t I C (A) 5
10 5
60
W ith In fin ite he
40
at si nk
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=1A Duty:less than 1%
20
0.1 5
10
50
100
500
3.5 0
91
2SC4139

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
(Ta=25C) Unit
A A
V V MHz pF
20.0min 19.90.3
4.0
a b
3.20.1
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
15
1. 5A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5

10 (V CE =4V)
1 .2 A
800 mA
600mA
8 V B E (sat) 1.0
55C (Cas
ase 25C (C
125C
10
e Temp)
Temp)
Temp )
em p) C
eT
6
mp)
400m A
Temp (Case 25C
25
125
as
C (
I B =100mA
12
2
5 5 C
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5
10
20
0.2
0.4
0.6
0.8
55C
(Case
200mA
0.5
Cas
(Case
Temp)
e Te
1.0
1.2
(V C E =4V) 50 8
j- a ( C/W)
125C

5 t s tg V C C 200V I C :I B1 :I B2 =10:1:2 1 0.5 t on
2
25C
55C
10
Sw it ching Time
0.5
tf 0.1 0.5 1 5 Collector Current I C (A) 10 15
5 0.02
0.05
0.1
0.5
10 15
0.1
10 Time t(ms)
100
1000

50 50

120
P c T a Derating
10 0 s
100
W ith
In fin
10
10
ite he at si nk
50
1 5 10 50 100 500 Collector-Emitter Voltage V C E (V)
1 5
10
50
100
500
3.5 Without Heatsink 0 0 25 50
75
100
125
150
92
2SC4140

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=10A IC=10A, IB=2A IC=10A, IB=2A VCE=12V, IE=2.0A VCB=10V, f=1MHz Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 165typ
(Ta=25C) Unit
A A
V V MHz pF
20.0min 19.90.3
4.0
a b
3.20.1
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 200 RL () 20 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1 IB2 (A) 2 ton (s) 1max tstg (s) 3max tf (s) 0.5max
5.450.1 B C E
5.450.1
18 16

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 1.4

18 16 (V CE =4V)
1 .6 A
1.2 A
800 mA
1
55C (Case 25C (Cas Temp)
V B E (sat)
12
600mA
400m A
12
e Temp)
Temp )
mp
mp) e Te
55C
Te
eT em p) 25 C
(Ca
(Cas 25C
as
I B =100mA
12
(C
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5
55
10 18
0.2
0.4
0.6
125
200mA
0.8
(Cas
125C
se
(Case
e Te
mp)
1.0
1.2
(V C E =4V) 50 10
j - a (C /W)
2
125C
5 V C C 200V I C :I B1 :I B 2 =10:1:2
t s tg
25C
55C
Switching Ti me
1 0.5 t on
0.5
10
tf 0.1 0.2 0.5 1 5 10 18
5 0.02
0.05
0.1
0.5
10 18
0.1
10 Time t(ms)
100
1000

50
10 ms

50 130
P c T a Derating
1m
10
10 Co lle ctor Cu rre nt I C ( A) 5
DC
10 5
100
W ith In fin ite he at
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 0.03 5 10 50 100 500
si nk
50
0.1 0.05 0.03 5
10
50
100
500
3.5 0
93
2SC4153
Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)

13.0min

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 0.6 ton (s) 0.5max tstg (s) 3max tf (s) 0.5max
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
200 mA

3

7 (V C E =4V)
150
mA
mA
100
5
60m
40mA
4
p) Tem
mp) (Cas e Te
(Ca
se
20m A
I C = 1A
3A
5A
0 0.005 0.01
30C
I B =10mA
25C
125
(Case
Temp
1.0 1.1
(V C E =4V)
j - a (C /W)

12 5 C
5
Typ
25C
100
100
30 C
50
50
0.5
20 0.01
0.1
0.5
5 7
20 0.01
0.1
0.5
5 7
0.2
10 Time t(ms)
100
1000
(V C E =12V) 40 20 10 5 Collector Curre nt I C (A)

10
P c T a Derating
30
Cut- off F req uenc y f T (MH Z )
30
Maxim um Power Dissipatio n P C (W)
Typ
10 ms
W ith In fin
20
150x150x2 100x100x2 10 50x50x2
ite he at si nk
10
0.1 0 0.01 0.05 0.1 1 5 5 10 50 100 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V)
94
2SC4296
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
(Ta=25C) Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ V V MHz pF Unit
A
V
23.00.3 9.50.2
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
10
1.2 A
1A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.4 (I C /I B =5)

10 (V C E =4V)
600 mA
400mA
6
mp )
V B E (sat)
emp
se T
(Ca
(Ca
25C
125
I B = 100mA
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2
(V C E =4V) 100 10
j - a (C/W)
3
50
25C
55C
V C C 200V I C :I B 1 :I B2 =10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 t on
125C
t s tg
Sw it ching Time
10
0.5
5 0.02
0.05
0.1
0.5
10
0.3
10 Time t(ms)
100
55C
(Cas
e Te
se
200m A
mp)
Te
3.0
1000

30
1m s

30 80
P c T a Derating
50
10
5 Collect or Cur ren t I C (A)
5 Collect or Cur re nt I C (A)
10
10
10
60
W ith In fin ite
1 0.5
he
40
at si nk
0.1 0.05 0.02 5
0.1 0.05 0.02 5
20
10
50
100
500
10
50
100
500
3.5 0
Without Heatsink 0 50 100 150
95
2SC4297

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
23.00.3
9.50.2
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
12


12 (V C E =4V)
1A
80 0m A
60 0m A
10 1
55C (Case 25C (Cas
125C
V B E (sat)
8
400m A
Temp)
p)
e Temp)
as e 2 5 Temp ) C
(Cas
(Ca
200mA
I B =100mA
2
12
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5
10
0.2
0.4
0.6
0.8
55C
25C
125
(C
1.0
(Case
Temp
e Te
se
Te (Case
mp)
Tem
mp)
(V C E =4V) 50 8
j - a ( C/W)
5
2
125C
t s tg V C C 200V I C :I B 1 :I B2 =10:1:2 1 0.5 t on
25C
30C
10
Swi tchi ng T im e
0.5
tf 0.1 0.5 1 Collector Current I C (A) 5 10
5 0.02
0.05
0.1
0.5
10 12
0.1
10 Time t(ms)
100
3.0
1.2
1000

30
10 0 s

30 80
P c T a Derating
10 Co lle ctor Cu rre nt I C ( A) Collector Curr ent I C (A) 5
10 5
60
W ith In fin ite he
40
at si nk
1 0.5
20
0.1 5
10
50
100
500
3.5 0
96
2SC4298

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
(Ta=25C) Unit
A
23.00.3
V V V MHz pF
9.50.2
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
15
1. 5A

(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5

10 (V CE =4V)
1. 2A
800 mA
8 V B E (sat) 1.0
55C (Cas e Temp)
10
600m A
6
mp)
400mA
Temp
em p) C
eT
25
C (
25C
125
as
I B =100mA
12
2
5 5 C
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5
10
20
0.2
0.4
0.6
0.8
55C
(Case
200mA
0.5
(Case
125C
Cas
(Case
Temp
Temp)
e Te
ase 25C (C
Temp)
1.0
(V C E =4V) 50 8
j- a ( C/W)
125C

5 t s tg V C C 200V I C :I B1 :I B2 = 10:1:2 1 0.5 t on
2
25C
55C
10
Sw it ching Time
0.5
tf 0.1 0.5 1 5 Collector Current I C (A) 10 15
5 0.02
0.05
0.1
0.5
10 15
0.1
10 Time t(ms)
100
3.0
1.2
1000

50 50

80
P c T a Derating
10 0 s
60
W ith
In fin
10
10
ite he
40
at si nk
20
Without Heatsink 1 5 10 50 100 500 1 5 10 50 100 500 3.5 0 0 25 50 75 100 125 150
97
2SC4299
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 3(Pulse6) 1.5 70(Tc=25C) 150 55 to +150 (Ta=25C) Unit V V V A A W C C

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
3


3 (V CE =4V)
500mA
400mA
300mA
1
p) 55C (Case Tem
25C (Cas e Temp)
Temp)
200mA
2
mp)
2 5 Cas eT C e m p)
(Cas
125C
125C
55
V C E (sat) 0 0.02 0.05 0.1 0.5 1
12
5C
0.2
0.4
0.6
0.8
55C (C
I B =50mA
25C (C
ase Tem
ase Te
(Case
e Te
p)
100mA
mp)
1.0
(V C E =4V) 50 125C DC C urrent G ain h FE 25C 8
j- a ( C/W)
t on t st g t f I C Characteristics (Typical)
3
5 t s tg VCC 250V IC:IB1:IB2 =2:0.3:1 Const. 1 0.5 t on 0.2 0.1 0.5 1 3
55C
Sw it ching Time
tf
10
0.5
5 0.01
0.05
0.1
0.5
0.3
10 Time t(ms)
100
3.0
1.2
1000

10 10

70
P c T a Derating
10
60
50
ith In fin ite
40
he
at si nk
30
0.5
20
10 Without Heatsink 3.5 0
0.1 50
100
500
1000
0.1 50
100
500
1000
25
50
75
100
125
150
98
2SC4300

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8

VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 (A) 1 ton (s) 1max tstg (s) 5max tf (s) 1max
3.35
1.5
5


5 (V CE =4V)
700mA
60 0m A
500m A
300mA
3
200mA
400 mA
3
mp)
Temp
e Te
(Cas
2
I B =100mA
Te m p) 25 C 5 5 C
V C E (sat) 0 0.03 0.05 0.1 0.5
C 125C (
as
10
0.2
0.4
0.6
0.8
55C (C
55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas
125C
25C
(Case
V B E (sat)
ase Tem
p)
1.0
(V C E =4V) 50 10
j- a ( C/W)
2
25C
VCC 250V IC:IB1:IB2 =2:0.3:1 Const.
125C
t s tg
55C
Switching T im e
0.5
1 0.5 t on 0.2 0.1 0.5
tf
10
5 0.02
0.05
0.1
0.5
0.1
10 Time t(ms)
100
3.0
1.2
1000

20 10 5 Collecto r Cur rent I C (A)
10
10 s

20 10 80
P c T a Derating
1m
5 Co lle ctor Cu rren t I C ( A)
60
W ith In
1 0.5
fin
1 0.5
ite he
40
at si nk
0.1 0.05
0.1 0.05
20
0.01
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
99
2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25C)

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
23.00.3 9.50.2
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
1A
700m A


7 (V CE =4V)
6
500mA
1
55C ) (Case Temp
ase Tem p)
mp)
300 mA
25C (C
Temp
(Cas
125C
12
V C E (sat) 0 0.02 0.05 0.1 0.5 1
25
5C
5 7
0.2
0.4
0.6
0.8
55C (C
eT
(C
25C
I B =100mA
as
(Case
emp
125C
(C
ase Tem
200mA
emp ase T
e Te
p)
1.0
3.0
1.2
(V C E =4V) 50 DC C urrent G ain h FE 10
j - a (C /W )
5

2
12
VCC 250V I C :I B1 :I B2 =2:0.3:1 Const.
25C
t s tg
55C
Sw it ching Time
0.5
1 0.5 t on 0.2 0.1
tf
10
5 0.02
0.05
0.1
0.5
0.5
0.1
10 Time t(ms)
100
1000

20 10
10 0 s

20 10 5 Collect or Cur ren t I C (A) 80
P c T a Derating
60
W ith In fin ite he
40
at si
1 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty :less than1%
nk
0.5
0.5
20
Without Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 0 25 50 75 100 125 150
100
2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=0.3A VCB=10V, f=1MHz Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.35 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.7max
2.54
3.9 B C E
3


3 (V C E =4V)
700mA
500 mA
V C E (sat) 2
25C (Case Temp)
125C (Case Temp)
300m A
2
200m A
55C (Case Temp)
0.2
0.80.2
a b
3.30.2
mp)
mp) (Cas e Te
100mA
V B E (sat)
p) 55C (Case Tem p) 25C (Case Tem Temp) 125C (Case
Cas
25C
0 0.01
0.05
0.1
0.5
0.2
0.4
0.6
0.8
55C
I B =50mA
125
C (
(Cas
e Tem
e Te
p)
1.0
1.2
j - a ( C/W)
125C 25C 55C 10 7 5
4
V C C 250V I C :I B1 :I B 2 =10:1.5:5 1 tf 0.5 t on 0.1 0.1
t s tg
Sw it ching Time
0.5 0.3
2 0.01
0.05
0.1
0.5
10 Time t(ms)
100
1000

10 5
50 s
10 0

10 5 Ma xim um Powe r Dissipat io n P C (W) 30 35
P c T a Derating
W ith
1 0.5
1 0.5
1m
DC ( Tc =2 5 C )
In
fin ite
10 ms
20
he at si nk
0.1 0.05 Without Heatsink Natural Cooling 0.01
0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
10
0.01 5 10 50 100 500 1000 0.005 50 100 500 1000 2 0
0.005 2
101
2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SC4381 2SC4382 150 150 6 2 1 25(Tc=25C) 150 55 to +150 200 200 (Ta=25C) Unit V V V A A W C C
Application : TV Vertical Output, Audio Output Driver and General Purpose

(Ta=25C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions
10max VCB= VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=0.2A VCB=10V, f=1MHz 150 150min 200 10max 200min 60min 1.0max 15typ 35typ
A
V
A
V V
16.90.3
8.40.2
13.0min
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9
B C E
50 m A

3

2 (V C E =10V)
1.2
Temp
e Temp)
0.8
I B =5mA/Step
25C (Cas
0.4
I C = 0 .5
1A
100
2A
0
10
10
1000
55C (Cas
125C
(Case
e Temp)
0.2
0.80.2
a b
4.00.2
Ratings 2SC4381 2SC4382

10.10.2 4.20.2 2.8 c0.5
Unit
3.30.2
1.0
(V C E =10V)
j - a ( C/W)
6
125 C
2 5 C
Typ
100
100
3 0 C
50 30 0.01
50 30 0.01
0.5
10 Time t(ms)
100
1000
30 (V C E =12V) 5

30
1m 5m
20 ms
P c T a Derating
M aximum Power Dissip ation P C (W)
D
20
Typ
20
10
0.1 Without Heatsink Natural Cooling 1.2SC4381 2.2SC4382

1 2
10
Without Heatsink 0 0.01 0.01 0.1 0.5 1 2 1 10 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 100 300 0
50
100
150
102
2SC4388

16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=0.5A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)

VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1 IB2 (A) 1 ton (s) 0.5max tstg (s) 1.8max tf (s) 0.6max
3.35
1A
m 00 A


15 (V C E =4V)
15
7
0 50
mA
300m A
20 0m A
10
10
100 mA
mp)
e Te
Cas
C (
25C
I B =20mA
I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
30C
125
(Case
50mA
(Cas
e Te
Temp)
mp)
(V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C 100 25C
(V C E =4V)
j - a (C /W)
3
100
Typ
1 0.5
50
50
30C
20 0.02
0.1
0.5
10 15
20 0.02
0.1
0.5
10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 30 40

100
10 m
P c T a Derating
10 Cut- off F req uency f T (M H Z ) Collect or Cur ren t I C (A)

DC
Typ
10
0m
80
20
60
40
10
0 0.02
0.1
10
0.05 3
10
50
100
200
3.5 0
103
3.0
2SC4418

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
13.0min
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.3 ton (s) 1max tstg (s) 2.5max tf (s) 0.5max
2.54
3.9 B C E
5
1.8 A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) V C E (sat) 2
55C (Case Temp)
125C (Case Temp)

5 (V CE =4V)
1.4 A
1A
60 0m A
3
400 mA
25C (Case Temp)
200 mA
100 mA
I B =50mA
C( 25
12
0 0.01
0.05
0.1
0.5
55
C (
5C
55C (Case Temp) Temp) 25C (Case e Temp) 5C (Cas 12
(C
se
Cas
Ca
eT em Tem p) p e Te ) mp)
V B E (sat)
as
0.2
0.80.2
a b
3.30.2
1.6
(V C E =4V) 100 8

j - a (C /W)
5
V C C 200V I C :I B 1 :I B2 =10:1:2 1 0.5 tf t on 0.1 0.1 0.5
t s tg
10 5
50
Typ
Sw it ching Time
2 0.01
0.05
0.1
0.5
0.5 0.4
10 Time t(ms)
100
1000

20 10 5 Collector Cur rent I C (A)
DC
10
1m s
10

20 30
P c T a Derating
50
10
ith
20
In fin
1 0.5
1 0.5
ite he at si nk
0.1 0.05
10
Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0 25 50 75 100 125 150
104
2SC4434
Application : Switching Regulator, Lighting Inverter, and General Purpose

(Ta=25C)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Ratings 100max 100max 400min 10 to 25 0.7max 1.3max 10typ 135typ
Unit
A A
V V MHz pF
20.0min 19.90.3
4.0
a b
3.20.1
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

VCC (V) 200 RL () 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1.6 IB2 (A) 3.2 ton (s) 0.5max tstg (s) 2.0max tf (s) 0.15max
5.450.1 B C E
5.450.1
10
1.2 A


15 14 12 Collector Current I C (A) 10 (V C E =4V)
1A
600 mA
400mA
1
e Temp) 25C (Cas mp) (Case Te 75C
V B E (sat)
) 7 5 C
8
p) Tem se Ca 75 C(
25 C (C ase
emp
(C
V C E (sat) 0 0.05
0.1
0.5
10
15
0C
15
25
(C
I B =100m A
as
ase 50C (C
eT
as
Temp)
Tem
eT
em
p)
200m A
p)
1.0
(V C E =4V) 50 75C DC Cur rent Gain h F E 25C
j - a ( C/W)

150C 5
2
t s tg 1 V C C 200V I C :I B 1 :I B2 =5:1:2 0.5
Switching Ti me
0.5
t on 0.1 0.05 0.5 1 tf 5 Collector Current I C (A) 10 15
10
5 0.05
0.1
0.5
10 15
0.1
10 Time t(ms)
100
1000

40 40
10 0 s

120
P c T a Derating
100
10 Collect or Cur ren t I C (A) Collector Cur rent I C (A) 5
10 5
50
0.1 5
10
50
100
500
3.5 0
105
2SC4445

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ
A
23.00.3
V V V MHz pF
9.50.2
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.35 ton (s) 0.7max tstg (s) 4max tf (s) 0.7max
3.35
3


3 (V C E =4V)
I B =700mA
500 mA
V C E (sat) 2
25C (Case Temp)
125C (Case Temp)
300m A
55C (Case Temp)
2
200m A
mp)
mp)
100mA
V B E (sat)
p) 55C (Case Tem p) 25C (Case Tem Temp) 125C (Case
(Cas
Cas
25C
50mA
C (
0 0.01
0.05
0.1
0.5
0.2
0.4
0.6
0.8
55C
125
(Cas
e Tem
e Te
e Te
p)
1.0


j - a ( C/W)
7 5 V C C 250V I C :I B1 :I B 2 =10:1.5:5 1 tf 0.5 t on 0.1 0.1 t s tg 4
55C 10
25C
Sw it ching Time
125C
0.5 0.3
2 0.01
0.05
0.1
0.5
10 Time t(ms)
100
3.0
1.2
1000

10 5
50 s

10 5 60
P c T a Derating
10
ith
0 s
40
In fin ite
1 0.5
he at si nk
20
Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 500 1000 Collector-Emitter Voltage V C E (V)
0.1 0.05 5
Without Heatsink 100 500 1000 3.5 0 0 50 100 150
10
50
106
2SC4466

20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)

5.450.1 B C E

5.450.1
0m A
15 0m A
1 m 00 A
A 80m


6 (V C E =4V)
6
20
50 mA
30mA
mp) p)
e Te
Cas
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
30C
25C
125
I B =10mA
C (
(Cas
(Case
20mA
e Tem
Temp

(V C E =4V) 200 125C DC Cur rent Gain h FE
j - a ( C/W)
5
100
25C
100
Typ
30C 50
50
0.5 0.3
30 0.02
0.1
0.5
56
20 0.02
0.1
0.5
56
10
100 Time t(ms)
1000 2000
(V C E =12V) 40 20 10 Cu t-off Fre quen cy f T (M H Z ) 30 Collector Curr ent I C ( A) 5

60
P c T a Derating
10
DC
10
1m s ms 0m s
W ith
Typ
40
In fin ite he
20
at si
nk
20
10
107
2SC4467

20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)

5.450.1 B C E

5.450.1
350m


8 (V C E =4V)
20
m 50
0m
m 100
A
75 m A
50m A
4
mp)
mp)
Cas
C (
(Cas
I B =10mA
I C =8A 0 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 0
0.1 0.2 0.3 0.4
0.5
30C
25C
125
(Case
e Te
20mA
e Te
Temp
1.0
1.5

j- a ( C/W)
3
Typ
100
100
25C 30C
50
50
0.5
20 0.02
0.1
0.5
20 0.02
0.3
0.1
0.5
10 Time t(ms)
100
1000
(V C E =12V) 40 20

80
10 m s
P c T a Derating
Cut-o ff Fr equ ency f T (M H Z )
10 5
100ms
60
W ith
Typ
DC
In fin ite he
20
40
at si
nk
10
20
Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
108
2SC4468

20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
O(50 to100), P(70 to140), Y(90 to180)

A 0m


10 (V C E =4V)
10
0m
40
30
m 00
150
mA
100m
75 m A
6
50 mA
Cas
(Case
25C
2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
C (
I B =10mA
0
30C
125
(Case
20mA
Temp
e Te
Temp)
mp)
(V C E =4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h FE 300 125C 100 25C 30C
(V C E =4V)
j - a (C /W)
3
Typ
100
1 0.5
50
50
20 0.02
0.1
0.5
10
20 0.02
0.1
0.5
10
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 40 30

100
3m
P c T a Derating
10 Cut- off F req uency f T (M H Z ) 30 Collector Curre nt I C ( A)

10 0m
10
Typ
DC
ith
ms
In fin ite he
20
50
at si nk
10
0 0.02
0.1
10
0.1 3
10
50
100
200
3.5 0
109

Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C)
2SC4495
Application : Audio Temperature Compensation and General Purpose
13.0min
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=0.1A VCB=10V,f=1MHz

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
3 0m A
1.5

3 (V CE =4V)
A 8m
12m
A
8mA
5m A
3mA
1.5
Temp) 55C (Case
Tem p) mp) (Ca 125
2mA
1mA
I C =1A
0 0
10
100
1000
0.5
25C
0.5
I B =0.5mA
2A
(Cas
e Te
0.5
se
3A
0.2
0.80.2
a b
3.30.2
1.5
(V C E =4V) 3000 DC Cur rent Gain h FE

(V C E =4V) 5000 D C Cur r ent Gai n h FE
j- a ( C/W)
7 5
Typ
1000
125C 25C 55C
1000 500
500
100 50 20 0.01
100 0.01
0.1
0.5
0.1
0.5
10
100 Time t(ms)
1000 2000
(V C E =12V) 60 10 5 Cu t-off Fre quen cy f T ( MH Z )

30
1m
10 m s
P c T a Derating
W ith In
Typ
40
DC
1 0.5
M aximum Power Dissipa tion P C (W)
10 0m s
fin
150x150x2
1 00x 1 0 10
0x 2
ite
he
at
20
si
nk
50x50x2
Without Heatsink 2
0 0.005 0.01
0.05 0.1 Emitter Current I E (A) 1 3 5 10 50 100 Collector-Emitter Voltage V C E (V)
25
50
75
100
125
150
110
2SC4511

13.0min

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
O(50 to100), P(70 to140), Y(90 to180)

2.54

3.9 B C E
0m A
15 0m A
1 m 00 A
A 80m


6 (V CE =4V)
6
20

50 mA
30mA
Cas e Te mp (Cas e Tem ) p)
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
30C
25C
125
I B =10mA
C (
(Case
20mA
Temp
0.2
0.80.2
a b
3.30.2

j- a ( C/W)
5
100
25C 30C
100
Typ
50
50
0.5 0.4 1 10 100 Time t(ms) 1000 2000
30 0.02
0.1
0.5
56
20 0.02
0.1
0.5
56
(V C E =12V) 40 20 10 Cu t-off Fre quen cy f T (M H Z ) 30 Collector Curre nt I C ( A) 5

30
10 m
P c T a Derating
10
DC
0m
ith
Typ
20
In fin ite he
20
1 0.5
at si nk
10
10
Without Heatsink 2 5 10 50 100 0 0 25 50 75 100 125 150
0 0.02
0.1
0.05 3
111
2SC4512

12.0min

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
16.00.7
8.80.2
a b
3.750.2
O(50 to100), P(70 to140), Y(90 to180)

2.5 B C E
4.0max
1.35
0.65 +0.2 -0.1 2.5 1.4

0m A
15 0m A
1 m 00 A
A 80m


6 (V CE =4V)
6
20
50 mA
30mA
Cas e Te mp (Cas e Tem ) p)
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
30C
25C
125
I B =10mA
C (
(Case
20mA
Temp
(V C E =4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C
(V C E =4V)
j - a ( C/W)
5
100
25C
100
Typ
30C 50
50
0.5 0.4 1 10 100 Time t(ms) 1000 2000
30 0.02
0.1
0.5
56
20 0.02
0.1
0.5
56
(V C E =12V) 40 20 10 Cu t-off Fre quen cy f T (M H Z ) 5 30 Collector Curre nt I C ( A)

50
10
P c T a Derating
100ms
40
W ith
DC
In
Typ
fin
30
ite he
20
1 0.5
at si nk
20
10
0 0.02
0.1
0.05 3
10
50
100
2 0
112
2SC4517/4517A
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SC4517 2SC4517A 900 550 7 3(Pulse6) 1.5 30(Tc=25C) 150 55 to +150 1000 Unit V V V A A W C C (Ta=25C)

(Ta=25C) Ratings

4.00.2 10.10.2 4.20.2 2.8 c0.5
2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ
Unit
A
V V
13.0min 16.90.3 8.40.2
V MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.45 ton (s) 0.7max tstg (s) 4max tf (s) 0.5max
2.54
3.9 B C E
0.2
3
40 0m A

Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.

3 (V CE =4V)
300mA
200 mA
150 mA
2
100m A
1.0 V B E (sat)
I B =40mA
0.5
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0
(V C E =4V) 50 DC Cur rent Gain h FE 125C 25C
j - a ( C/W)

7 5
4
V C C 250V I C :I B 1 :I B2 =1:0.15:0.45 1 0.5 t on 0.1 0.2 tf
55C
t s tg
Switching Ti me
10
0.5 0.3
5 0.02
0.05
0.1
0.5
0.5
10 Time t(ms)
0.80.2
a b
3.30.2
100
1000

10
50

10 30
P c T a Derating
10
W ith
1 0.5
1 0.5
20
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1% 2SC4517
10
2SC4517A 1000
0.01 2
10
50
100
500 1000
0.01 50
100
500
113
2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25C)
Ratings Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25C) 150 55 to +150 1000 Unit V V V A A W C C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=0.35A VCB=10V, f=1MHz Ratings
(Ta=25C) 2SC4518 2SC4518A 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V V MHz pF Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
13.0min
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 250 RL () 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.27 IB2 (A) 0.9 ton (s) 0.7max tstg (s) 4max tf (s) 0.5max
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
5
0 70 mA
600mA

Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.

5 (V CE =4V)
250 mA
3
1.0 V B E (sat)
Collector Current I C (A) 0.5 1 5 10
400 mA
150 mA
2
0.5
I B =50mA
V C E (sat) 0 0.03 0.05 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2
(V C E =4V) 50
j - a (C /W)

125C

7 5 V C C 250V I C :I B 1 :I B 2 =1:0.15:0.5 1 tf 0.5 t on 0.1 0.2 t s tg
4
25C
55C
Swi tchi ng T im e
10
0.5 0.3
5 0.02
0.05
0.1
0.5
0.5
10 Time t(ms)
100
1000

20 10 5 Collecto r Curr ent I C (A) Collector Curr ent I C ( A)
10 0

20 10 5 M aximum Power Dissip ation P C (W) 35
P c T a Derating
30
W ith In fin ite
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1% 2SC4518 100 500
20
he at si nk
10
0.1 0.05 0.03 10
0.1 0.05
Without Heatsink 2SC4518A 1000 2 0 0 25 50 75 100 125 150
50
100
500
1000
0.03 50
114
2SC4546
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25C)
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
7
1A
V CE ( sat ) I C Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1.0 I C / I B =5 Const.

7 (V C E =4V)
800mA
60 0m A
40 0m A
300 mA
4
200m A
0.5
125C (Case Temp)
mp) e Te (Cas
Tem
25C
30C (Case Temp)
0 0.02
0.05
0.1
0.5
10
125
30C
I B =50m A
(Ca
25C (Case Temp)
se
(Case
Temp
p)
0.2
0.80.2
a b
3.30.2
1.0
j- a ( C/W)

125C

t s tg
4
1 0.5 tf t on 0.1 0.05 0.02 0.2 V C C 200V I C :I B1 :I B 2 =5:1:2 0.5 1 5 Collector Current I C (A)
25C
30C
Sw it ching Time
10
0.5 0.3
5 0.02
0.05
0.1
0.5
10 Time t(ms)
100
1000

20 10 5 Co lle ctor Cu rren t I C ( A)
10

20 10 30
P c T a Derating
W ith
20
In fin ite he at si
nk
0.5
0.5
10
Without Heatsink 2 0.1 10 50 100 500 700 0.1 10 50 100 500 700 0 0 25 50 75 100 125 150
115
2SC4557

16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=1A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
10
1.2 A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 2

10 (V CE =4V)
1A
80 0m A
400m A
600 mA
6
p)
Temp
1
55C (Case Temp) Temp) 25C (Case p) ase Tem 125C (C
V B E (sat)
eT
200mA
(Case
Cas
125
2
ase 125C (C
Te m
p)
V C E (sat) 0 0.02 0.05 0.1
0.5
5 5
5C
10
0.2
0.4
0.6
0.8
55C
25C
25C
I B =100mA
C (
(Case
Temp)
em
1.0
(V C E =4V) 50 10
j- a ( C/W)

125 C

t s tg V C C 250V I C :I B1 :I B2 =10:1.5:3
2
25 C
5 5 C
Sw it ching Time
1 0.5 t on tf 0.1 0.2 0.5 1 Collector Current I C (A) 5 10
0.5
10
5 0.02
0.05
0.1
0.5
10
0.1
10 Time t(ms)
100
3.0
1.2
1000

20 10 5 Collect or Cur re nt I C (A)
10

20 10 80
P c T a Derating
60
W ith In fin ite he
40
at si
nk
0.5
0.5
20
Without Heatsink 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 3.5 0 0 25 50 75 100 125 150
116
2SC4662

4.00.2 10.10.2 4.20.2 2.8 c0.5
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=0.3A VCB=10V, f=1MHz Ratings 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ
(Ta=25C) Unit
A
V V V MHz pF
13.0min 16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.3 ton (s) 1max tstg (s) 2.5max tf (s) 0.5max
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 2

(V C E =4V) 5
55C
1
55C (Case
V B E (sat)
Temp)
mp)
)
mp
p)
mp) e Te (Cas
eT
Te 25C (Case
125C (C
p) ase Tem
(C
C (
Te
V C E (sat) 0 0.01 0.05 0.1
C 125
25C
0.5
0.2
0.4
125
as
0.6
25C
0.8
55C
(Case
Cas
Temp
em
1.0
1. 2
1.4


j - a ( C/W)
3 5
125C 25C
V C C 200V I C :I B 1 :I B2 =10:1:2 t s tg
1 0.5 t on tf 0.1 0.1 0.5 1 3
Sw it ching Time
55C
10
5 0.01
0.05
0.1
0.5
0.5 0.4
10 Time t(ms)
100
1000

20 10
10

20 10 30
P c T a Derating
W ith
20
In fin ite he at si
nk
0.5
0.5
10
117
2SC4706
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 600 7 14(Pulse28) 7 130(Tc=25C) 150 55to+150 Unit V V V A A W C C

20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
14

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const.

14 (V CE =4V)
6 1.
12
1.2 A
800mA
Collector Current I C (A) 10
10
600mA
8
400m A
8
emp )
mp) e Te (Cas
1 V B E (sat)
Cas
eT
6
200mA
C (
25C
125
I B =100mA
2
2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6
0.8
55C
(Case
Temp
1.0
1.2

(V C E =4V) 50 8

5 V C C 250V I C :I B1 :I B2 =10:1.5:5 1 t on 0.5 tf t s tg
125C
25C
55C
10
Sw it ching Time
5 0.02
0.05
0.1
0.5
10 14
0.1 0.2
0.5
10
14

50
10

50 130
P c T a Derating
10 Collector Cur rent I C (A) Collector Curr ent I C (A)
10 5
100
1 0.5
50
0.1 10
50
100
500
1000
0.1 50
100
500
1000
3.5 0
118
2SC4883/4883A
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SC4883 2SC4883A 150 150 6 2 1 20(Tc=25C) 150 55 to +150 180 180 Unit V V V A A W C C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.7A IC=0.7A, IB=70mA VCE=12V, IE=0.7A VCB=10V, f=1MHz
Application : Audio Output Driver and TV Velocity-modulation

(Ta=25C) Ratings 2SC4883 2SC4883A 10max 150 10max 150min 180min 60 to 240 1.0max 120typ 30typ V MHz pF
13.0min
Symbol ICBO VCB= Conditions

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A A
V
16.90.3 8.40.2
180
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
2


2 (V C E =4V)
100mA
60mA
30m A
15m
10m
1
)
Temp) 55C (Case
eT
Cas
C (
I C =2A 0.5A 0 2 5 10 50 1A 100 500 1000 0 0
10
25C
125
(Cas
e Te
mp)
I B =5mA
emp
0.2
0.80.2
a b
3.30.2
1.0

(V C E =4V) 300 DC Curr ent Gain h FE 125C 25C 100
j- a ( C/W)
7 5
Typ
100
55C
50 30 0.01
50 40 0.01 0.05 0.1 0.5 1 2 0.05 0.1 0.5 1 2
10
100 Time t(ms)
1000 2000
(V C E =12V) 160 140 5

20
1m s
P c T a Derating
Typ
Cut-o ff Fr equ ency f T (M H Z ) 120 Collect or Cur ren t I C (A) 100 80 60 40 20 0 0.01 0.01 0.1 Emitter Current I E (A) 1 2 1 5 10 1 0.5
D C
10 ms
10 0m s
W ith In fin ite he
10
at si nk
0.1 0.5 Without Heatsink Natural Cooling 1.2SC4883 2.2SC4883A 1 50 100 2 200
2 0
119
LAPT
2SC4886
16.2
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
V
23.00.3 9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)

3.35
0m
400m A
A 300m


14 (V C E =4V)
14
75 A
A 0m 60 0mA 50
200m
A
A
10
150m
10
10 0m A
em
eT
as
12
5A 0 0 0.2 0.4 0.6 0.8 1.0 0 0
30
25
I B =20mA
5C
I C =10A
(Ca
(C
se
Tem
50m A
p)
p)
3.0

j - a ( C/W)
3
100
Typ
100
25C 30C
0.5
50
50
20 0.02
0.1
0.5
10 14
20 0.02
0.1
0.5
10 14
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 40

80
1m s
P c T a Derating
Typ
60 Co lle ctor Cu rre nt I C (A)
10 5
10
DC
0m
10
60
W ith In fin ite he
40
40
at si
nk
20
20
Without Heatsink 5 10 50 100 200 150 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
10
0.05 2
120
2SC4907

4.00.2 10.10.2 4.20.2 2.8 c0.5
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ
(Ta=25C) Ratings Unit mA V V V MHz pF
16.90.3
8.40.2
13.0min
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
6
1A

Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 (I C /I B =5)

6 (V C E =4V)
80 0m A
600m A
400m A
300m A
3
200mA
V B E (sat) 1
p) 55C (Case Tem Temp) 25C (Case Temp) (Case 125C
ase
3
mp
0.2
0.80.2
a b
3.30.2
emp se T
se
(Ca
(Ca 25C
p)
V C E (sat) 0 0.02 0.05 0.1
(C 125C
0.5
0.2
0.4
125
Te
0.6
0.8
55C
(Cas
I B =100mA
25C
e Te
Te
mp)
1.0
1.2
1.4
j - a ( C/W)
7 5
4
125C
25C
V C C 200V I C :I B 1 :I B2 =10:1:2 1 0.5
t s tg
Sw it ching Time
55C
10
t on
0.5 0.3
tf 0.1 0.2 0.5 1 5 6
5 0.02
0.05
0.1
0.5
5 6
10 Time t(ms)
100
1000

20 10 5 Collect or Cur re nt I C (A)
10 0

20 10 5 30
P c T a Derating
W ith
20
In fin ite he at si
nk
0.5
0.5
10
121
2SC4908

13.0min

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.35 ton (s) 1max tstg (s) 5max tf (s) 1max
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
A 0m

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const,

3 (V C E =4V)
50
400 mA
300m A
200m A
2
140mA
mp)
mp) 25C (C ase Te
I B =20mA
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2
(V C E =4V) 50 125C D C Cur r ent Gai n h F E 25C 30C 10 5
j - a (C /W)

4
t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:1
1 tf 0.5 t on 0.2 0.1 0.5 1 3
Swi tchi ng T im e
0.5 0.3
2 0.02
0.05
0.1
0.5
10 Time t(ms)
100
30C (C
60mA
125C
(Cas
V B E (sat)
ase Tem
e Te
p)
1000

10 10

35
P c T a Derating
10
5
0
30
W ith
Collector Curr ent I C ( A)
In fin ite
20
he
at si nk
0.5
10
Without Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 2 0 0 25 50 75 100 125 150
122
2SC5002
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25C) Ratings 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ Unit A mA A V
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=0.5A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
23.00.3
9.50.2
a b
V V MHz pF
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35

VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.8 IB2 (A) 1.6 tstg (s) 4.0max tf (s) 0.2max
1.5
1.5 A
VCE(sat)IC Characteristics (Typical)

3 (I C : I B = 5 :1)

7 (V CE =5V)
1. 2A

700 mA
400 mA
4
mp)
mp)
e Te
200m A
125C
I B =100 mA
25C (C
0 0.02
0.1
0.5
10
0.5
30C
(Case
(Cas
ase Te
Temp)
1.0
3.0
1.5
(V C E =5V) 100 20
t stg t f I C Characteristics (Typical)

j- a ( C/W)
. V C C =200V . I C : I B 1 : I B 2 =5 :1: 2 3
t s t g t f ( s)
50
10
125C
t stg
25 C
10 5
3 0 C
Swi tchi ng T im e
1 0.5
tf
0.5
2 0.02
0.05
0.1
0.5
0.1 0.2
0.5
0.1
10
100 Time t(ms)
1000 2000

20
100s

20 80
P c T a Derating
10 Collector Cur rent I C (A) Collecto r Curr ent I C (A)
10 5
60
W ith In fin ite he
40
at si nk
0.5
20
Without Heatsink 1 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 1000 2000 3.5 0 0 50 100 150
123
Built-in Damper Diode

2SC5003
(Ta=25C) Ratings 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit A mA mA V
0.80.2
Equivalent circuit
B
( 50 )
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sElectrical Characteristics
Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=0.5A VCB=10V, f=1MHz
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
23.00.3
9.50.2
V V V MHz pF
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8

VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.8 IB2 (A) 1.6 tstg (s) 4.0max tf (s) 0.2max
3.35
1.5
1.7 A

3 (I C : I B = 5 :1)

7 (V CE =5V)
1. 4A
6
900 mA
5
600 mA
4
mp)
mp)
0.2
0.5
10
0.5
30C
I B =100mA
125C
25C (C
(Case
(Cas
ase Te
300mA
Temp)
e Te
1.0
3.0
1.5
(V C E =5V) 50 20

j - a ( C/W)
. V C C =200V . I C : I B 1 : I B 2 =5 :1: 2 t stg 3
t s t g t f ( s)
10 5
12
5C
10
25
C
0C
Swit ching Time
1 0.5
tf
0.5
2 0.02
0.05
0.1
0.5
0.1 0.2
0.5
0.1
10
100 Time t(ms)
1000 2000

20
100s

20 80
P c T a Derating
10 Collect or Cur ren t I C (A) Collecto r Cur rent I C (A)
10 5
60
W ith In fin ite he
40
at si
nk
0.5
20
1 100
1000
0.1 50
100
500
1000
2000
3.5 0
124
2SC5071

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ
A A
19.90.3
V V V MHz pF
4.0
a b
3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

5.450.1 B C E
5.450.1
12


(V CE =4V) 12
1A
80 0m A
60 0m A
10 V B E (sat) 1
55C (Case Temp)
8
400m A
25C (Cas
125C (C
e Temp)
as e 25 Temp ) C
6
emp se T (Ca 25C
mp
se
I B =100mA
2
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5
10
12
12
55C
5C
(C
(Cas
(Ca
e Te
Te
200mA
(V C E =4V) 40 125C DC Cur rent Gain h F E 5
j - a ( C/W)
t on t s tg t f ( s)
3
25C 30C
1 0.5 tf
V C C 200V I C :I B1 :I B2 =10:1:2
t s tg
Swi tchi ng T im e
0.5
10 8 0.02 0.05 0.1 0.5 1 5 10 12
0.1 0.5
t on 1 Collector Current I C (A) 5 10 12
0.3
10 Time t(ms)
100
mp)
emp ase T
1.0
1000

30
10 0 s

30 100
P c T a Derating
10 Co lle ctor Cu rren t I C (A) Collector Curr ent I C (A) 5
10 5
W ith In fin ite he
50
at si nk
1 0.5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Dut y:less than 1%
0.1 5
10
50
100
500
0.1 5
10
50
100
500
3.5 0
125
2SC5099

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
V
9.50.2
A
23.00.3
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)

3.35
0m A
15 0m A
10 A 0m
8 0mA


6 (V CE =4V)
6
20
50 mA
30mA
e Te mp e Tem ) p)
Cas
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
30C
25C
125
I B =10mA
C (
(Cas
(Case
20mA
Temp
(V C E =4V) 300 DC C urrent G ain h FE D C Cur r ent Gai n h F E 200 125C
(V C E =4V)
j- a ( C/W)
5
100
25C
100
Typ
30C 50
50
0.5 0.3
30 0.02
0.1
0.5
56
20 0.02
0.1
0.5
56
10
100 Time t(ms)
1000 2000
(V C E =12V) 40 20 10 Cut-o ff F requ ency f T (MH Z ) 30 Collect or Cur ren t I C (A) 5

60
P c T a Derating
10
DC
10
0m
ms
1m
Typ
40
20
20
10
126
3.0
2SC5100

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)

3.35
350m


8 (V C E =4V)
0m
20
15
0m
A 00m
75 m A
50m A
4
mp)
mp)
Cas
C (
(Cas
I B =10mA
I C =8A 0 2A 0.6 4A 0.8 1.0 0 0
0.2
0.4
0.5
30C
25C
125
(Case
e Te
20mA
e Te
Temp
1.0

j- a ( C/W)
4
Typ
100
100
25C 30C
50
50
0.5
20 0.02
0.1
0.5
20 0.02
0.1
0.5
0.2
10
100 Time t(ms)
1000 2000
(V C E =12V) 40 20 10

80
P c T a Derating
30
Typ
Collecto r Cur ren t I C (A)
DC
60
20
40
10
20
Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 8 0.1 5 10 50 100 150 3.5 0 0 25 50 75 100 125 150
3.0
1.5
10 m s
10 0m
127
2SC5101

16.2

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)

3.35
A 0m
m 00


10 (V CE =4V)
10
IB
=4
30
00
150
mA
100m
75 m A
6
50 mA
4
20mA
Cas
(Case
25C
2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
C (
10mA
0
30C
125
(Case
1 Base-Emitter Voltage V B E (V)
Temp)
e Te mp) Temp )
3.0
(V C E =4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h F E 300 125C 100 25C 30C
(V C E =4V)
j - a ( C/W)
3
Typ
100
1 0.5
50
50
20 0.02
0.1
0.5
10
20 0.02
0.1
0.5
10
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 40 30

80
P c T a Derating
10
30 Collector Curre nt I C (A)
10
60
10
ith
ms s 0m
Typ
In
fin ite he
20
40
at si nk
10
20
Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 10 0.1 3 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
128
2SC5124
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25C) Ratings 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ Unit A mA A V
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=1A VCB=10V, f=1MHz

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
23.00.3
9.50.2
a b
V V MHz pF
19.1 16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35

VCC (V) 200 RL () 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 1.2 IB2 (A) 2.4 ton (s) 0.1typ tstg (s) 4.0typ tf (s) 0.2typ
1.5
2.4 A

Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C / I B =5:1 Collector Current I C (A)

10 (V C E =5V)
10
1. 8A
1. 2A
700 mA
300 mA
I B =100mA
0 0.02
0.05
0.1
0.5
10
1.0

10
125C 25C
5 V C C 200V I C :I B 1 :I B 2 =5:1:2 1 0.5 tf 0.1 0.2
t s tg
10
55C
5 3 0.02
Switching Ti me
0.1
0.5
10
0.5
10

30 30

100
P c T a Derating
10 Collector Curre nt I C ( A) 5
10 Co lle ctor Cu rre nt I C (A) 5
50
1 0.5
0.1 5 10 50 100 500 1000 Collector-Emitter Voltage V C E (V)
0.1 50
100
500
1000
2000
3.5 0
3.0
10 0 s
129
2SC5130

4.00.2 10.10.2 4.20.2 2.8 c0.5
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=0.3A VCB=10V, f=1MHz 100max 10max 400min 10 to 30 0.5max 1.3max 20typ 30typ
A
16.90.3
V V V
8.40.2
13.0min
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54

VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.3 ton (s) 1max tstg (s) 2max tf (s) 0.3max
3.9 B C E
0.2
800 mA

Collector-Emitter Saturation Voltage V C E (s at) (V ) 1.5 I C / I B =5 Const.

(V C E =4V) 5
50 0m A
30 0m A
1.0
15 0m A
2
p)
0.80.2
a b
3.30.2
mp) e Te (Cas
0 0.01
55C (Case Temp)
0.05 0.1
0.5
0.2
0.4
125
0.6
25C
0.8
55C
C (
I B =50mA
25C (Case Temp)
(Case
Cas
0.5
eT
125C (Case Temp)
Temp
em
1.0
1.2
1.4
j - a ( C/W)
125C 25C
5
Swi tchi ng T im e
55C
0.5 t on tf 0.1 0.1 V C C 200V I C :I B 1 :I B2 =10:1:2 0.5 1 3
t s tg
10
5 0.01
0.05
0.1
0.5
0.5 0.4
10 Time t(ms)
100
1000

20 10
10

20 30
P c T a Derating
5 Collecto r Cur ren t I C (A)
Co lle ctor Cu rre nt I C ( A)
Maximu m Power Dissi pation P C ( W)
50
10
W ith
20
In fin ite he at si
1 0.5
nk
10
Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150
130
2SC5239

2.5 B C E 12.0min 4.0max

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 1.4

VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.45 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.5max
3
40 0m A

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.

(V C E =4V) 5
300mA
200 mA
4 Collector Current I C (A) 0.5 1 5
150 mA
2
100m A
1.0 V B E (sat)
I B =40mA
0.5
1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.5 Base-Emittor Voltage V B E (V) 1.0
j- a ( C/W)
125C 25C 7 5
4
t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:0.45 1 0.5 t on 0.1 0.2 tf
55C
Swit ching Time
10
0.5 0.3
5 4 0.02
0.05
0.1
0.5
5 6
0.5
10 Time t(ms)
100
1000

7 5
50

7 5 M aximu m Power Dissip ation P C (W) 50
P c T a Derating
10
40
W ith
Co lle ctor Cu rr ent I C (A)
Collector Curr ent I C ( A)
1 0.5
1 0.5
In fin
30
ite he at si nk
0.1 0.05
20
0.01
10
50
100
500
0.01 10
50
100
500
1000
2 0
131
2SC5249

13.0min

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
300mA

0.5 I C / I B =5 Const.

3 (V C E =4V)
200 mA
2
100m A
p)
mp) e Te 25C (Cas
se
1
I B =20mA
25C (Case Temp) 55C (Case Temp)
0 0.01
0.05
0.1
0.5
55C
125
(Case
(Ca
Temp
50mA
Tem
125C (Case Temp)
0.2
0.80.2
a b
3.30.2
1.0
(V C E =4V) 200 125C DC Cur rent Gain h FE 100 25C 50 55C 30

j- a ( C/W)
3
t s tg 10 V C C 200V 5 I C :I B1 :I B 2 =10:1:1 t on 1 0.5 0.2 0.1 tf
Switching Ti me
10 5 0.01
0.5
0.05
0.1
0.5
0.5
0.3
10 Time t(ms)
100
1000

7 5
100 s

7 5 Ma xim um Powe r Dissipation P C ( W) 30 35
P c T a Derating
W ith
Collecto r Cur ren t I C (A)
In fin
ite
20
he at
0.5
0.5 Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1%
si nk
10
0.1
Without Heatsink 0.05 10 50 100 500 0.05 10 50 100 500 2 0 0 25 50 75 100 125 150
132
2SC5271
Application : Resonant Switching Regulator and General Purpose

(Ta=25C) Ratings 100max 100max 200min 10 to 30 15min 1.0max 1.5max 10typ 45typ V V MHz pF
13.0min
Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=7V IC=10mA VCE=2V, IC=2.5A VCE=2V, IC=1mA IC=2.5A, IB=0.5A IC=2.5A, IB=0.5A VCE=12V, IE=0.5A VCB=10V, f=1MHz

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54

3.9 B C E
0.2
0.80.2
a b
3.30.2
133
2SC5287

5.450.1 B C E 20.0min 4.0max

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
V
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 5.450.1 0.65 +0.2 -0.1 1.4

5
0 70 mA
600mA

Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.

(V CE =4V) 7
400 mA
6 Collector Current I C (A) 0.5 1 5 7
250 mA
3
1.0 V B E (sat)
150 mA
2
0.5
I B =50mA
1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.5 1.0
j - a ( C/W)
125C 25C 6 5
3
V C C 250V I C :I B1 :I B 2 =1:0.15:0.5 1 0.5 t on 0.1 0.2 tf
t s tg
10
Switching T im e
55C
0.5
5 4 0.02
0.05
0.1
0.5
10
0.5
0.3
10 Time t(ms)
100
1000

20 10
10

20 80
P c T a Derating
50
0 s
10
60
W ith In fin ite
1 0.5
1 0.5 Without Heatsink Natural Cooling IB2=1.0A L=3mH Duty:less than 1%
he
40
at si nk
Without Heatsink Natural Cooling 0.1 0.05 0.03 10 50 100 500
20
0.1 0.05 0.03 50
Without Heatsink 100 500 1000 3.5 0 0 25 50 75 100 125 150
134
2SC5333
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 300 300 6 2 0.2 35(Tc=25C) 150 55to+150 Unit V V V A A W C C
2.54 2.20.2
Application : Series Regulator, Switch, and General Purpose

(Ta=25C) Ratings 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V MHz pF
13.0min
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12V, IE=0.2A VCB=10V, f=1MHz

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit mA V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.40.2

VCC (V) 100 RL () 100 IC (A) 1.0 VB2 (V) 5 IB1 (A) 0.1 IB2 (A) 0.2 ton (s) 0.3typ tstg (s) 4.0typ tf (s) 1.0typ
3.9 B C E
0.2
0.80.2
a b
3.30.2
200 B= mA

2 (V CE =4V)
2
I
mp)
e Te
A /s I B =2 0m
25C (C
125C
(Cas
to p
I C =1A 0 0 0.1 0.2
2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0
(V C E =4V) 200 DC Cur r ent Gai n h F E DC Cur r ent Gai n h F E

(V C E =4V) 200
j- a (C /W )
4
100
Typ
100
25C
50
50
30
125
0.5 0.3
10 3 10 100 Collector Current I C (mA) 1000 2000
10 3
10
50
100
500 1000 2000
10 Time t(ms)
100
30C (C
ase Tem
ase Te
p)
mp)
1000
Collector Current I C (mA)
(V C E =12V) 20

35
P c T a Derating
Typ
30
W ith In fin ite
20
he
10
at si nk
10
Without Heatsink 0 0.003 0.01 0.05 0.1 Emitter Current I E (A) 0.5 1 2 0 0 25 50 75 100 125 150
135
2SC5370
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 40 7 12 3 30(Tc=25C) 150 55to+150 Unit V V V A A W C C
Application : Emergency Lighting Inverter and General Purpose

(Ta=25C) Ratings 10max 10max 40min 70min 0.3max 1.2max 90typ 120typ V V MHz pF
13.0min
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB hFE Rank Conditions VCB=60V VEB=7V IC=25mA VCE=2V, IC=6A IC=6A, IB=0.3A IC=6A, IB=0.3A VCE=12V, IE=3A VCB=10V, f=1MHz

4.00.2 10.10.2 4.20.2 2.8 c0.5
Unit
A
V
16.90.3 8.40.2
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
O(70 to 140), Y(120 to 240), G(200 to 400)
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
136
Darlington
2SD1769
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 10max 20max 120min 2000min 1.5max 2.0max 100typ
typ
Equivalent circuit
B
(2.5k)(200) E
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
(Ta=25C) Unit

3.00.2 10.20.2 4.80.2 2.00.1
A
mA V V MHz pF
2.5 12.0min 4.0max 16.00.7 8.80.2
a b
3.750.2
1.35
0.65 +0.2 -0.1 2.5 B C E 1.4

VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) 1.5 IB1 (mA) 3 IB2 (mA) 3 ton (s) 0.5typ tstg (s) 5.5typ tf (s) 1.5typ
A
5m A
mA


(V CE =2V) 8
8
20
10 m
3
2mA
1 .5 m A
0 .7 m
Tem
mp) e Te
A 0 .5 m
0 .4 m A
1mA
p)
125
25C
I B =0.3mA
0
0.3
10
50
100
30C
(Case
(Cas
2A
(Ca
4A
se
I C =6 A
Temp
(V C E =2V) 10000 DC Curr ent Gain h F E 5000
Typ

(V C E =2V) 10000 5000 D C Cur r ent Gai n h FE
j - a (C /W)
10 5
12
1000 500
1000 500
5C C 25
1 0.5
100 50 30 0.03 0.05 0.1
80 0.03
0.1
0.5
10
0.5
10
0.2
10
50 100 Time t(ms)
1000
5000
(V C E =12V) 120 20

50
P c T a Derating
100 Cu t-of f Fr eque ncy f T (MH Z )
Typ
10
10
D
500 s
s 1m s 3m ms
40
W ith
5 Collector Curre nt I C ( A)
In fin
30
ite he at si
nk
50
20
0 0.05 0.5 1 5 8 Emitter Current I E (A)
0.08 3
10
50
100
200
2 0
137
Darlington
2SD1785
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=2A, IB=3mA VCE=12V, IE=0.1A VCB=10V, f=1MHz Ratings 10max 10max 120min 2000min 1.5max 100typ 70typ V MHz pF
13.0min
Equivalent circuit
B
(2.5k)(200) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) 1.5 IB1 (mA) 3 IB2 (mA) 3 ton (s) 0.5typ tstg (s) 5.5typ tf (s) 1.5typ
2.54
3.9 B C E
0.2
A
5m A
3m A
2mA

(V CE =2V) 8
8
A 20
1 0m
1 .5 m
0 .7 m
1mA
emp se T (Ca
30C
Te
mp
0 .5 m
)
(Cas e Te mp)
5C
2A
4A
(Ca
0 .4 m A
I C =6 A
se
I B =0.3mA
0
0.3
10
50
100
0.4
25C
12
0.80.2
a b
3.30.2
Ty p

(V C E =2V) 10000 5000 DC C urrent G ain h FE
j- a ( C/W)
5
12
1000 500
25
1000 500
5C C
100 50 30 0.03 0.05 0.1
100 0.03 0.1 0.5 1 5 10
0.5
10
0.5
10 Time t(ms)
100
1000
(V C E =12V) 120 20

30
P c T a Derating
5
10
Typ
10
1m
W ith
ms
20
In fin ite he
at si nk
50
10
0.1 0 0.05 0.05 3
0.1
0.5
25
50
75
100
125
150
138
Built-in Avalanche Diode for Surge Absorbing Darlington

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 6010 6010 6 4 0.5 25(Tc=25C) 150 55 to +150 Unit V V V A A W C C
2SD1796
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=0.2A VCB=10V, f=1MHz Ratings 10max 10max 6010 2000min 1.5max 60typ 45 typ V MHz pF
13.0min
Equivalent circuit
B
(3 k )(15 0) E
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
0m A
1.0m A
0 .8 m A


(V CE =2V) 4
4
=2
IB
0. 5m A
0 .6 m A
p)
ase Tem 25C (C
4A
0.3mA
0 0.2
0.5
10
50
100
125C
30C (C
I C= 2 A I C =1 A
(Cas
I C= 3 A
ase Tem
I C=
e Tem
0.4 mA
p)
p)
(V C E =4V) 20000 D C Cur r ent Gai n h FE 10000

(V C E =4V) 20000 10000 5000
125 C
j- a ( C/W)
Typ
5000
1000 500
1000 500
C 25 0C 3
1 V C B =10V I E =2V 0.5 1 10 Time t(ms) 100 1000
100 50 0.05 0.1 0.5 1 4 Collector Current I C (A)
100 50 0.05 0.1 0.5 1 4
(V C E =10V) 120 10

30
10
P c T a Derating
W ith In
1m
100 Cut- off F req uency f T (M H Z ) Collector Cur rent I C (A)
80
DC
Typ
60
1 0.5
5
10
0m s
fin
150x150x2
1 00x 1 0 10
0x 2
ite
he
at
40
si
nk
Without Heatsink Natural Cooling 0.1 0.05
50x50x2
Without Heatsink 2
20
0 0.01
0.1
10
50
100
25
50
75
100
125
150
139
Darlington
2SD2014
13.0min
Equivalent circuit
B
(3k) (200) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) sAbsolute maximum ratings (Ta=25C)
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
m 1.0 A
0 .8 m A


(V CE =4V) 4
4
0m A
IB
=2
0. 5m A
0 .6 m A
p)
0.2
0.80.2
a b
3.30.2
p) ase Tem 25C (C
2A
1
3A
(Cas
I C =4 A
0.3mA
0.2
10
50
100
125C
1A
30C (C
ase Tem
e Tem
0. 4m A
p)
(V C E =4V) 20000 10000 DC Curr ent Gain h FE 5000 DC C urrent G ain h FE

(V C E =4V) 20000 10000 5000
125 C
j- a ( C/W)
5
Typ
1000 500
1000 500
C 25 0C 3
100 50 30 0.03 0.1 0.5 1 4
100 50 30 0.03
0.1
0.5
0.5
10
50 Time t(ms)
100
500 1000
(V C E =10V) 120 10 5

25
10
0m s
P c T a Derating
1m
m s
30
100 Cut -off Fre quen cy f T ( MH Z ) Collector Cur rent I C (A)
M aximu m Power Dissipa tion P C (W)
10
0 s
20
DC
80
W ith In
Typ
60
1 0.5
150x150x2
1 00x 1 0 10
0x
fin ite he
at si nk
40
50x50x2
20
0 0.02
0.05 0.1
0.5
10
50
100
25
50
75
100
125
150
140
Darlington
2SD2015
13.0min
Equivalent circuit
B
(3k) (500) E
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
m =1 A


(V CE =4V) 4
4
IB
0.8mA
0.6mA
0.4mA
0.5mA
mp)
mp) 25C (C ase Te
1
1A
2A
0.2
10
50
100
30C (C
125
C (
3A
Cas
0.3mA
I C =4 A
ase Tem
e Te
p)
(V C E =4V) 20000 10000 DC Curr ent Gain h FE 5000

(V C E =4V) 20000 10000 DC C urrent G ain h FE 5000
12 5C
j- a ( C/W)
5
Typ
1000 500
1000 500
25
0C
100 50 0.03 0.1 0.5 1 4
100 50 0.03 0.05 0.1 0.5 1 4
0.5
10
50 Time t(ms)
100
500 1000
(V C E =12V) 60 10 5 50 Cut-o ff F requ ency f T (MH Z ) Collector Cur rent I C (A)

30
100ms
DC
10
P c T a Derating
W ith In
1m
m s
30
40
Typ
30
1 0.5
fin
150x150x2
1 00x 1 0 10
0x 2
ite
he
at
20
si
nk
0.1 10 0.05 0 0.02 0.03 0.05 0.1 0.5 1 4 5
50x50x2
Without Heatsink 2
10
50
100
200
25
50
75
100
125
150
141
Darlington
2SD2016
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=0.1A VCB=10V, f=1MHz Ratings 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF
13.0min
Equivalent circuit
B
(2k) (200) E
Application : Igniter, Relay and General Purpose

(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 B C E
A
mA

3 (V CE =4V)
3
3m
1.5
1mA
0.5m
p)
Tem
mp) (Cas e Te 25C
(Ca
1
12 5C
25C
se
5 5C
0.2
55C (C
125
ase Tem
p)
I B= 0
.3m
0.2
0.80.2
a b
3.30.2
(V C E =4V) 10000 5000 DC Cur rent Gain h FE

(V C E =4V) 10000 5000 DC Curr ent Gain h F E
j - a ( C/W)
125
1000 500
25
1000 500
C 55
100 50
100 50 0.03 0.1 0.5 1 3 10 0.03 0.1 0.5 1 3
0.5
10
50 Time t(ms)
100
500 1000
(V C E =12V) 80

30
P c T a Derating
60
20
W ith In
40
fin
150x150x2
1 00x 1 0 10
0x 2
ite
he
at
si
nk
20
50x50x2
Without Heatsink 2
0 0.01
0.05
0.1
0.5
25
50
75
100
125
150
142
Darlington
2SD2017
13.0min
Equivalent circuit
B
( 4k )
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0m A


(V C E =2V) 6
6
4
m 20
8m
A
4m A
2mA
4
1mA
p) (Ca se Tem C
0.2
0.80.2
a b
3.30.2
I C =8A
1
I C =3A
I C =1A
1
25C
(Cas
I B = 0 .4
mA
0 0.2 0.5
10
50 100
500 1000
30C
125
e Te mp) (Case Temp )

j- a ( C/W)
5
Typ
25
1000 500
1000 500
0C
Transient Thermal Resistance 0.5 1 56
125
100 50 30 0.03
100 50 30 0.03
0.5 0.3
0.1
0.5
5 6
0.1
10
50 Time t(ms)
100
500 1000
(V C E =12V) 30 20 10

35
P c T a Derating
Typ
Cut- off F req uency f T ( MH Z ) Collector Curr ent I C (A)
D.
(T
20
C=
25
C)
10
30
1m s
W ith
1 0.5
20
In fin ite he
at si
10
nk
0.1 0.05 0 0.02 0.05 0.1 0.02 3
0.5
5 6
10
50
100
300
2 0
25
50
75
100
125
150
143
Darlington
Symbol VCBO VCEO IC IB PC Tj Tstg Ratings 120 120 6 6(Pulse10) 1 50(Tc=25C) 150 55 to +150
2SD2045
16.2
Equivalent circuit
B
(2.5k)(200) E
Silicon NPN Triple Diffused Planar Transistor

Application : Driver for Solenoid, Motor and General Purpose

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
mA
23.00.3
.VEBO
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

3.35
6
20mA


(V C E =2V) 6
5m
2m
mA
0.7m A
0.5m
p)
Cas
25C
2A
1
C (
0.1
0.5
10
50
100
30C
125
(Case
(Cas
4A
e Te
eT
I C =8A
mp) Temp )
.4 m B= 0
em
3.0

(V C E =2V) 10000 5000
j- a (C /W)
5
Typ
12
1000 500
1000 500
C 25 C 0 3
0.5
100 50 0.03 0.1 0.5 1 5 6
100 50 0.03 0.1 0.5 1 56
0.2
10 Time t(ms)
100
1000
(V C E =12V) 120 20

50
P c T a Derating
100 Cut -off Fre quen cy f T ( MH Z ) 5 Collector Cur rent I C (A) 80
Typ
10
1m s
40
W ith
10 ms
DC
In
30
fin ite
60
he at si
20
nk
40
20
10 Without Heatsink 0
0 0.05 0.1
0.5
5 6
0.05 3
10
50
100
200
25
50
75
100
125
150
144
Darlington
2SD2081
13.0min
Equivalent circuit
B
(2k) (200) E

(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
50

3

10 (V C E =4V)
A 0m
5mA
3mA
10
2m A
1mA
mp)
p) ase Tem 25C (C
I B =0.5mA
0.2
0.5
10
50
100 200
30C (C
125C
1A
(Cas
0. 7m A
5A
ase Tem
e Te
p)
I C =10A
(V C E =4V) 20000 10000 DC Cur rent Gain h F E 5000

(V C E =4V) 20000 10000 DC Cur rent Gain h F E 5000
j - a ( C/W)
5
Typ
12
1000 500
5C
25 C
0C
1000 500
0.5
100 50 30 0.03
100 50 30 0.03
0.1
0.5
10
0.1
0.5
10
0.2
10 Time t(ms)
100
1000
(V C E =12V) 120 30

30
10 m
P c T a Derating
Typ
100 Cut- off Fr equ ency f T ( MH Z ) Collector Curre nt I C (A) 10 5
1m
s
W ith
80
DC
20
In fin ite he
60
at
si nk
40
10
20
0 0.05 0.1
0.5
10
0.05 3
25
50
75
100
125
150
145
Darlington
2SD2082
16.2
Equivalent circuit
B
(2k) (100) E

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
23.00.3
9.50.2
mA
a b
MHz pF
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
A


16 (V CE =4V)
26
40m
20
m 12
A
6mA

3mA
1. 5m A
I C =16A 8A 1 4A
12
8
)
Te
10
I B =1m A
emp
(Ca
se T
4
12
5C
(Ca
25C
0.2
0.5
10
50
100 200
30
C (
Cas
e Te
se
mp)
mp
(V C E =4V) 30000 DC Curr ent Gain h F E 10000 5000

(V C E =4V) 20000 DC Curr ent Gain h F E 10000 5000
25
j - a (C /W)
5
30
Typ
125
1 0.5
1000 500
1000 500
100 0.2
0.5
10
16
100 0.02
0.5
10
16
0.1
10 Time t(ms)
100
3.0
1000
(V C E =12V) 30 50

80
10
10
P c T a Derating
Typ
Cut- off F req uenc y f T (MH Z ) 10 Collector Cur rent I C (A) 20 5
DC
1m
60
W ith In fin ite he
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 0.03 3
40
at si nk
10
20
0 0.05 0.1
0.5
10 16
10
50
100
200
3.5 0
146
Darlington
2SD2083
5.450.1 B C E 20.0min 4.0max
Equivalent circuit
B
(2k) (100) E

(Ta=25C) Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A
mA
19.90.3
4.0
a b
3.20.1
2 3 1.05 +0.2 -0.1 5.450.1 0.65 +0.2 -0.1 1.4

40
m 30 A


25 (V C E =4V)
20m
12mA
Collector Current I C (A) 30
8mA 5mA
20 2 I C =25A Collector Current I C (A)
em
emp se T (Ca
20
3m A
p)
12A 1 6A
as
25C
12
0 0.5
10
50
100
500
30
C (
10
Cas
5C
I B =1.5m A
e Te
10
(C
mp)
eT
2.2
(V C E =4V) 20000 10000 DC Curr ent Gain h F E 5000 20000 DC Curr ent Gain h F E 10000 5000
C
(V C E =4V)
j - a (C/W)
3
25
Typ
125
C 30
1000 500
1000 500
0.5
100 0.2
0.5
10
40
100 0.02
0.5
10
40
0.1
10 Time t(ms)
100
1000
(V C E =12V) 100 100 50

120
P c T a Derating
Typ
Cut -off Fre quency f T (M H Z )
100
W ith
1m
10
10 5
DC
In fin ite he
50
at si nk
50
1 0.5
0 0.1
0.5
10
0.2 3
10
50
100
200
3.5 0
147
Equivalent circuit
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=0.5A VCB=10V, f=1MHz Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF
13.0min
(1.5k)(100) E
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
10
0 15 m

3

10 (V CE =4V)
120mA
A
90mA 60mA
A 20m mA 18
2mA
4mA
p) Tem
ase
(C
1A
5C
C (C
0.2
0.5
10
50
100 200
30C
25
12
(Case
as
eT
3A
Temp
em
5A
p)
I B =1 mA
I C =7A
2.0
2.4
(V C E =2V) 10000 5000 DC Cur rent Gain h F E

(V C E =2V) 10000 5000 DC Cur rent Gain h F E
j- a ( C/W)
5
Typ
12
1000 500
1000 500
25
1 0.5
100 50
100 50
10 0.02
0.1
0.5
10
20 0.02
0.1
0.5
1.0
10
0.1
10 Time t(ms)
100
1000
(V C E =12V) 40 20 10 5 Cu t-off Fre quen cy f T (M H Z ) 30 Collector Curre nt I C (A)

40
P c T a Derating
1 0.5
Typ
10 0m
1ms
10 ms
W ith In
20
20
fin ite he at
si nk
0.1 0.05
10
0 0.01
0.05
01
0.5
0.01 1
10
50
100
500
100
125
150
148
Equivalent circuit
Darlington
2SD2389
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
(7 0 )


(Ta=25C) Unit
5.00.2 2.0 1.8

15.60.4 9.6 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
0.65 +0.2 -0.1 1.4

5m 2. A 0m A


8 (V CE =4V)
10mA
2.
1.
A 8m
1.5m
1. 3m A
0.8 mA
I C =8A I C =6A 1 I C =4A
1.0m A
4
mp)
e Te
e Te (Cas 25C
Cas
0.2
0.5
10
50
100 200
30C
I B =0.3mA
125
C (
(Cas
e Te
mp)
0.5mA
mp)
(V C E =4V) 40000 DC C urrent G ain h FE DC C urrent G ain h FE 50000 125C
(V C E =4V)
j - a ( C/W)
4
Typ
10000 5000
10000 5000
25C 30C
0.5
1000 1000 02 0.5 1 Collector Current I C (A) 5 8 500 0.2 0.5 1 Collector Current I C (A) 5 8
0.2
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 120 20 10 100 Cut- off F req uenc y f T (MH Z )

80
10
10 0m
P c T a Derating
Typ
80 Collect or Cur ren t I C (A)
5
D C
60
W ith In fin ite
1 0.5
he
60
40
at si nk
40
20
0.1 0.05
20
0 0.02
0.1
0.03 3
150
149
Equivalent circuit
Darlington
2SD2390
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
(7 0 )

(Ta=25C) Unit
5.00.2 2.0 1.8

15.60.4 9.6 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
0.65 +0.2 -0.1 1.4

Collector-Emitter Saturation Voltage V C E (sa t) (V )
10 m A 2. 5m A

3

10 (V C E =4V)
10
2m
1. 5m A
1.2 mA
1m A
0.8mA
I C =10A I C =7A 1 I C =5A
mp) e Te (Cas 25C

30C
Tem
se
I B =0.4mA
2
0.2
0.5
10
50
100 200
125
(Cas
(Ca
e Te
mp)
0.6mA
p)
2.5

(V C E =4V) 70000 50000 125C
j- a ( C/W)
3
Typ
10000 5000
1 0.5
10000 5000
25C 30C
0.1
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 100 30

100
10
P c T a Derating
80 Cut- off F req uency f T (M H Z ) Collect or Cur ren t I C (A)
10 5
DC
10
0m
m s
ith In
60
Typ
fin ite he
50
at si nk
40
20
0 0.02
0.1
10
0.05 3
10
50
100
200
3.5 0
150
Equivalent circuit
Darlington
2SD2401
20.0min 4.0max
(7 0 )

(Ta=25C) Unit

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1

A 10m
2.5 mA

3

12 (V C E =4V)
2 .0 m
1.5 mA
1.2m A
1.0 mA
6
0.8mA
I C =10A I C =7A 1 I C =5A
6
p)
) emp se T (Ca
se
125
0.2
0.5
10
50
100 200
30
25C
C (
I B =0.4mA
Cas
(Ca
e Te
0.6mA
Tem
mp)
2.6

(V C E =4V) 70000 50000 125C
j- a ( C/W)
2
Typ
10000 5000
10000 5000
25C 30C
0.5
1000 1000 02 0.5 1 Collector Current I C (A) 5 10 12 600 0.2 0.5 1 Collector Current I C (A) 5 10 12
0.1
10
50
100
500 1000 2000
Time t(ms)
(V C E =12V) 100 30

160
10 m
P c T a Derating
80 Cu t-of f Fr eque ncy f T (MH Z ) Collector Curr ent I C (A)
10 5
DC
10
0m
120
W ith In
60
Typ
fin ite he
80
at si nk
40
40
20
0 0.02
0.1
10
0.05 3
10
50
100
150
200
5 0
151
Equivalent circuit
Darlington
2SD2438
16.2
(7 0 )

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8

VCC (V) 60 RL () 10 IC (A) 6 VBB1 (V) 10 VBB2 (V) 2 IB1 ( mA) 6 IB2 (mA) 6 ton (s) 0.6typ tstg (s) 10.0typ tf (s) 0.9typ
3.35
5m 2. A 0m A


8 (V C E =4V)
10mA
2.
1.
A 8m
1.5m
1. 3m A
0.8 mA
I C =8A I C =6A 1 I C =4A
1.0m A
4
mp) e Te
0.5mA
125C
0.2
0.5
10
50
100 200
25C
I B =0.3mA
30C
(Case
(Case
(Cas
Temp
) Temp )
(V C E =4V) 40000 DC C urrent G ain h FE DC C urrent G ain h FE 50000 125C
(V C E =4V)
j- a ( C/W)
4
Typ
10000 5000
10000 5000
25C 30C
0.5
0.2
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 120 20

80
10 m
P c T a Derating
10 100 Cut- off F req uenc y f T (MH Z )
Typ
Collect or Cur ren t I C (A) 80
DC
0m
10
60
60
40
40
20
20
0 0.02
0.1
0.05 3
10
50
100
200
3.5 0
152
3.0
2.5
s
Equivalent circuit
Darlington
2SD2439
16.2
(7 0 )

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
Collector-Emitter Saturation Voltage V C E (s at) (V )
10 m A 2. 5m A

3

10 (V C E =4V)
10
2m
1. 5m A
1.2 mA
1m A
0.8mA
I C =10A I C =7A 1 I C =5A
p)
Tem
0.6mA
e Te
se
(Cas
I B =0.4mA
2
25C
0.2
0.5
10
50
100 200
30C
125
(Cas
(Ca
e Te
mp)
mp)

(V C E =4V) 70000 50000 125C
j- a ( C/ W)
3
Typ
10000 5000
1 0.5
10000 5000
25C 30C
0.1
10
50 100 Time t(ms)
500 1000 2000
(V C E =12V) 100 30

80
10 m
P c T a Derating
80 Cut- off Fr equ ency f T (MH Z ) Collecto r Cur ren t I C (A)
10 5
DC
10 0m
60
60
Typ
40
40
20
20
Without Heatsink 5 10 50 100 200 3.5 0 0 50 100 150
0 0.02
0.1
10
0.05 3
3.0
2.5
153
Equivalent circuit
Darlington
2SD2557
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=0.5A VCB=10V, f=1MHz Ratings 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V pF
20.0min 4.0max
(3.2k)(450) E
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator and General Purpose

(Ta=25C) Unit

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A
mA V
19.90.3
4.0
a b
3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
5.450.1 B C E
5.450.1
5
I B = 1 .0
2 m 50 A
V CE (sat) I C Temperature Characteristics (Typical)

Collector to Emitter Saturation Voltage V C E (sat) (V ) 3 (IC/IB=1000)

5 (V C E =4V)
50
mA
10 mA
2
5 C
1 .2 m
2.5
mA
12
em p) mp)
(Cas 25C
(C
0 .3 m
1
as
e Te
eT
0.2
0.5
30C (C
12
5C
ase Tem
p)
0 .6 m
25
2.5
Collector Current Ic(A)

(V C E =5V) 8000 5000 DC Cur rent Gain h FE
C 125 C 25
30 C
j- a (C /W)
5.0
1000 500
100 50
1.0
0.5 0.3
10 5 0.02
0.1
0.5
10
50 100 Time t(ms)
500 1000 2000
30

70
P c T a Derating
10 Co lle ctor Cu rr ent I C (A) 5
10 m 50 s 10 m s 0m s
1m s
60
W
50
ith In fin ite
40
he at
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300
si nk
30
20
10 Without Heatsink 3.5 0 0 25 50 75 100 125 150
154
Equivalent circuit
Darlington
2SD2558
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=0.5A VCB=10V, f=1MHz Ratings 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz
16.2
(3.2k)(450) E
Application : Series Regulator and General Purpose

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
23.00.3
9.50.2
mA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
5
I B = 1 .0
25 A 0m
V BE (sat) I C Temperature Characteristics (Typical)

Base to Emitter Saturation Voltage V B E (sat)(V ) 3 (IC/IB=1000)

5 (V C E =4V)
50
mA
10 mA
2
3 0 C
1 .2 m
2.5
mA
em p) mp)
eT
(Cas
(C
0 .3 m
1
as
e Te
125
0.2
0.5
25C
30C (C
12
5C
ase Tem
p)
0 .6 m
2 5 C
2.5
(V C E =5V) 8000 5000 D C Cur r ent Gai n h F E

C 125 C 25
30 C
j - a (C /W)
5.0
1000 500
100 50
1.0
0.5 0.3
10 5 0.02
0.1
0.5
10
50 100 Time t(ms)
500 1000 2000
30

60
P c T a Derating
10 Collecto r Cur ren t I C (A) 5
40
1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300
20
Without Heatsink 3.5 0 0 25 50 75 100 125 150
3.0
1m s
155
Equivalent circuit
Darlington
2SD2560
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
(7 0 )
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 15 1 130(Tc=25C) 150 55to+150 Unit V V V A A W C C

(Ta=25C) Unit
5.00.2 2.0 1.8

15.60.4 9.6 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
0.65 +0.2 -0.1 1.4

15


15 (V CE =4V)
10mA
50mA
3mA
2m A
1.5 mA
1. 0m A
10
0.5mA
0. 8m A
10
emp
mp) e Te (Cas 25C

30C
I C =.15A I C =.10A 1 I C =.5A
eT
0 0.2
0.5
10
50
100 200
125
C (
I B =0.3mA
(Cas
Cas
e Te
mp)
2.2
(V C E =4V) 50000 DC Curr ent Gain h F E DC Curr ent Gain h F E 50000

12 5C
(V C E =4V)
j- a ( C/W)
3.0
Typ
10000 5000
10000 5000
1.0
25
0.5
0C
1000 500 02 0.5 1 Collector Current I C (A) 5 10 15
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 50

130
P c T a Derating
60 Collecto r Cur ren t I C (A)
10 5
Maxim um Power Dissipa tion P C (W)
10 m
10 0m s
DC
100
W ith In fin ite he
40
at si
nk
50
20
0.1 0 0.02 0.05 01 0.5 1 5 10 0.05 3 5 10 50 100 200 3.5 0 0
156
Equivalent circuit
Darlington
2SD2561
20.0min 4.0max 2 3
(7 0 )

(Ta=25C) Unit

36.40.3 24.40.2 2-3.20.1 9 7 21.40.3 2.1 6.00.2
A A
V
a b
1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
0.65 +0.2 -0.1 3.0 +0.3 -0.1

50mA

3

17 15 (V C E =4V)
10mA
3m
15
mA
1 .5 m A
1. 0m A
0. 8m A
10
10
mp) e Te (Cas 25C
p) Tem
I C =.15A I C =.10A 1 I C =.5A
(Ca
I B =0.3mA
0 0.2
0.5
10
50
100 200
30C
125
(Cas
e Te
se
mp)
0.5mA
2.6

12 5C
(V C E =4V)
j- a ( C/W)
2
Typ
10000 5000
10000 5000
25
0.5
30
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 50

200
10
P c T a Derating
Cut-o ff Fr equ ency f T ( MH Z )
10 5
0m
10
DC
m s
160
W ith In fin
120
ite he
40
at si
1 0.5
nk
80
20
0.1 0 0.02 0.1 1 Emitter Current I E (A) 10 0.05 3 5 10 50 100 200 5 0
157
Equivalent circuit
Darlington
2SD2562
16.2
(7 0 )

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
V
9.50.2
A
23.00.3
a b
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 -0.1
3.3
0.8

5.450.1 1.5
0.65 +0.2 -0.1
3.35
15

15 (V CE =4V)
10mA
50mA
3mA
2m A
1.5 mA
1. 0m A
10
0.5mA
0. 8m A
10
emp
mp)
I C =.15A I C =.10A 1 I C =.5A
e Te
eT
Cas
C (
I B =0.3mA
25C
0 0.2
0.5
10
50
100 200
30C
125
(Cas
(Cas
e Te
mp)
3.0
2.2

12 5C
(V C E =4V)
j- a (C /W )
3.0
Typ
10000 5000
10000 5000
1.0
25
0.5
30
0.1
10
100 Time t(ms)
1000 2000
(V C E =12V) 80 50

100
10 m s
0m
P c T a Derating
10
Cut-o ff Fr eque ncy f T (MH Z )
60 Collecto r Cur ren t I C ( A)
10
DC
5
80
W ith In
60
fin ite
40
he at
si nk
40
20
0.1 0 0.02 0.05 01 0.5 1 5 10 0.05 3 5 10 50 100 200 3.5 0
158
Darlington
2SD2589
(Ta=25C) Ratings 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V MHz pF
12.0min 4.0max 1.35
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=0.5A VCB=10V, f=1MHz
External Dimensions FM-25(TO220)

3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
16.00.7
8.80.2
a b
3.750.2
0.65 +0.2 -0.1 2.5 B C E 2.5 1.4

A 1m
5mA

6 (VCE=4V)
0.
5m
0. 4m A
0.3 mA
4
0.2mA
I C =5A
mp)
e Te
125C
I C =3A
I B =0.1mA
0.1
0.5
10
50
100
30C
25C
(Case
(Case
(Cas
Temp
Temp
2.5
(VCE=4V) 40000

(VCE=4V) 40000
j - a ( C/W)
Typ
DC C urrent G ain h FE DC Curr ent Gain h F E 10000 5000 10000 5000
12 5C
25 C
3
1000 500
0C
1000 500 200 0.02
0.5 0.4 1 10 100 Time t(ms) 1000 2000
0.1
0.5
5 6
100 0.02
0.1
0.5
56
(VCE=12V) 80

50
P c T a Derating
Typ
M aximu m Power Dissipa tion P C ( W) 40
W ith
60
In fin
30
ite he
40
at si nk
20
20
0 0.02
0.1
2 0
159
Equivalent circuit
Darlington
2SD2641
20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
(7 0 )

(Ta=25C) Unit
5.00.2

15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A A
19.90.3
4.0
a b
3.20.1
0.65 +0.2 -0.1 1.4

A 1m


6 (V CE =4V)
6
5mA
0.
5m
0. 4m A
0.3 mA
5C 12
0.2mA
(C
as
Temp (Case
30C
)
(Case Temp )
I C =5A 1
I C =3A
I B =0.1mA
0.1
0.5
10
50
100
25C
eT
em
p)
2.5
(V C E =4V) 50000 DC Curr ent Gain h F E DC C urrent G ain h FE 50000 125C 10000 5000 25C
(V C E =4V)
j - a (C /W)
5
10000 5000
Typ
1000 500
1000 500
30C
0.5 1 5 10 50 100 Time t(ms) 500 1000 2000
100 0.01
0.1
0.5
56
100 0.01
0.1
0.5
56
(V C E =12V) 80 20

60
P c T a Derating
Typ
10 5
10
60 Collector Curre nt I C (A)
10
ith
0m s
40
In fin ite he
40
1 0.5
at si nk
20
20
0 0.02
0.1
160
Equivalent circuit
Darlington
2SD2642
Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V
13.0min
(7 0 )

(Ta=25C) Unit

4.00.2 10.10.2 4.20.2 2.8 c0.5
A
16.90.3
. (BR)CEO V
hFE VCE(sat) VBE(sat) fT COB
8.40.2
MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

2.54
3.9 B C E
0.2
0.80.2
a b
3.30.2
A 1m

Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 6

(V CE =4V)
6
5mA
5 0.
mA
0. 4m A
0.3 mA
5C 12
0.2mA
(C
as
Temp (Case
30C
)
(Case Temp )
I C =5A 1
I C =3A
I B =0.1mA
0.1
0.5
10
50
100
25C
eT
em
p)
2.5
(V C E =4V) 50000 DC Curr ent Gain h FE DC C urrent G ain h FE 50000 125C 10000 5000 25C
(V C E =4V)
j - a (C /W)
4
10000 5000
Typ
1000 500
1000 500
30C
0.5 0.3
100 0.01
0.1
0.5
56
100 0.01
0.1
0.5
56
10
50 Time t(ms)
100
500 1000
(V C E =12V) 80 30

30
P c T a Derating
Typ
10 Cu t-of f Fr eque ncy f T (MH Z ) 60 Collector Cur rent I C (A) 5
DC
10
10 m s 0m s
W ith
20
In fin ite he
40
at
si nk
10
20
0 0.02
0.1
0.05 3
25
50
75
100
125
150
161
Equivalent circuit
Darlington
2SD2643
16.2
(7 0 )

(Ta=25C) Unit

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6
A
23.00.3
9.50.2
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 0.8typ tstg (s) 6.2typ tf (s) 1.1typ
3.35
A 1m


6 (V CE =4V)
6
5mA
0.
5m
0. 4m A
0.3 mA
5C
0.2mA
(C
as
Temp
12
eT
em
p)
(Case
I C =3A
25C
I B =0.1mA
0.1
0.5
10
50
100
30C
(Case
Temp
I C =5A
3.0
2.5

(V C E =4V) 50000 DC Curr ent Gain h FE 125C 10000 5000 25C
j - a (C /W)
10000 5000
Typ
1000 500
1000 500
30C
0.5 1 5 10 50 100 Time t(ms) 500 1000 2000
100 0.01
0.1
0.5
56
100 0.01
0.1
0.5
56
(V C E =12V) 80 20

60
P c T a Derating
Typ
10 5
10
10
Cut- off F req uenc y f T (M H Z )
ith
0m s
40
In fin ite he
40
at si nk
20
20
0 0.02
0.1
162
Equivalent circuit
SAH02
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode
Application : Chopper Regulator

(Ta=25C) Ratings 10max 10max 30min 100min 150min 0.3max 100typ 45typ
30 min 0.55 max 15 typ

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 30 30 10 3 0.5 800(Ta=25C) 125 40 to +125 Unit V V V A A mW C C
Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) fT COB VR VF
trr
External Dimensions PS Pack

2.540.25
Conditions VCB=30V VEB=10V IC=10mA VCE=2V, IC=1A VCE=2V, IC=0.5A IC=0.5A, IB=20mA VCE=12V, IE=0.3A VCB=10V, f=1MHz
IR=100A IF=0.5A IF=100mA
Unit
A
V
4
0.75 +0.15 -0.05
4.320.2
2
4.8max
0.890.15
1.40.2 6.8max 3.60.2 4.0max
V MHz
0.25
8.00.5 6.30.2 0.3 +0.15 -0.05 0~0.1 1.00.3 3.00.2 9.80.3
pF
V V ns
3
100mA 20mA
Di ode I F V F Characteristics
3

3 (V C E =2V)
15mA
2
5m A
Forward Current I F (A)
1 0m A
5m A
) emp
mp) e Te
30C
Cas
eT
I B =3mA
C (
25
12
0.5 Forward Voltage V F (V)
1.0
0.5
125
25C
(Case
(Cas
Temp
1.0
1.5

1.0

j- a (C /W)
300 100
V C C 12V I B 1 =I B2 =30mA 0.8 t stg 0.6 t on
500 25C 30C
Transient Thermal Resistance 0.5 1 3
125C
Swit ching Time
10
0.4 0.2 0 0.1
tf
1 0.3 0.001
100 0.01
0.05
0.1
0.01
0.1
1 Time t(ms)
10
100
1000
V CE (sat) I B Temperature Characteristics (Typical)

Collecto r-Emitte r Satu ration Voltage V C E( s a t ) ( V) 1.5 (I C =0.5A) 5

1.0
100s
P c T a Derating
30C 25C
Collector Curr ent I C (A) 1.0 1 0.5
10 m
1m
s
125C
0.5
0.5
0.05 0 1 0.03 3
Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125
10
50
100
300
10
50
163
SAH03
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode
Equivalent circuit 2 (4k) (100) 1 3
Application : Voltage change switch for motor

(Ta=25C) Ratings 10max 3max 60min 2000 to 12000 1.4max 100typ 30typ
100 min 1.5 max 100 typ

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 1.2 0.1 1.0(Ta=25C) 150 40to+150 Unit V V V A A W C C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VR VF
trr
External Dimensions PS Pack

3 4
0.75 +0.15 -0.05
Conditions VCB=60V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA VCE=12V, IE=0.1A VCB=10V, f=1MHz
IR=100A IF=0.5A IF=100mA
Unit
2.540.25
A
mA V
2
a b
4.320.2
4.8max
0.890.15
1.40.2 6.8max 3.60.2 4.0max
V MHz pF
V V
8.00.5 6.30.2 0.3 +0.15 -0.05 0~0.1 1.00.3 3.00.2 9.80.3
0.25
ns
2.4
5.0mA 10.0mA 2.0mA
1.2mA
Di od e I F V F Characteristics
1.2 1

2.4 (V CE =4V)
1 .0 m A
0 .8 m A
0 .6 m A A
0.5 Collector Current I C (A) Forward Current I F (A)
0 .5 m
0 .4m A
0.1
emp
mp) e Te (Cas
Cas
I B =0.3m A
C
C (
1 0 C
25C
2 5 C
0.01
1 Forward Voltage V F (V)
1.6
30C
125
125
(Cas
e Te
eT
0.05
mp)

2

j- a ( C/W)
300 100
1 tf 0.5 t on
1000 500
12
Switching T im e
25
5C C
Transient Thermal Resistance 0.5 1 2.4
t stg
V C C 30V I B 1 =I B 2 =2mA
5000
10
0 3
100 0.1 0.2 0.5 1 2.4 50 0.02 0.05 0.1
1 0.3 0.001
0.01
0.1
1 Time t(ms)
10
100
1000
V CE (sat) I B Temperature Characteristics (Typical)

Collecto r-Emitte r Satu ration Vo lt age V C E( s a t ) ( V) 3 (I C =0.5A)

3
10 0
P c T a Derating
1.5
125C
25C
2
30C
Collector Curre nt I C ( A)
1m s
10 ms
1.0
0.5
0.5
Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 150
0 0.1
0.5
0.05 1
10
50
100
164
SAP09N
(Complement to type SAP09P)
Equivalent circuit
B
R: 70 Typ.
S Emitter resistor RE: 0.22 Typ. E
Application: Audio sElectrical Characteristics

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCB =150V VEB = 5V IC =30mA VCE =4V, IC =6A IC =6A, IB =6mA IC =6A, IB =6mA VCE =20V, IC =40mA IF =2.5mA IE =1A 0.176 1220 705 0.22 0.264 150 5000 20000 2.0 2.5 V V mV mV
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 150 150 5 10 1 80 ( Tc = 25C) 10 150 40 to +150 Unit V V V A A W mA C C
( Ta = 25C ) Ratings
min typ max
External Dimensions
3.30.2 15.40.3 9.90.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
Unit A A V
100 100
3.4max
a b
10.1 (41)
(2.5)
0.65 0.1
+0.2 0.8 0.1
+0.2
2.540.1 3.810.1
(18)
1.35 0.1
+0.2
0.65 0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
B D
S E
Weight: Approx 8.3g a. Part No. b. Lot No.
IC VCE Characteristics (Typical)

10mA 2.5mA 2.0mA
VCE(sat) IB Characteristics (Typical)

Collector-Emitter Saturation Voltage VCE(sat) (V)
3 10
IC VBE Temperature Characteristics

(VCE =4V)
10
1.5
mA
1.3mA
1.0m
A
A
1.8mA
0.8m
Collector Current IC (A)
0.5mA
6
2 IC =8A 6A 4A 1
0.3mA 4 IB = 0.2mA 2
125C 25C
30C
0 0.3 0.5
10
50
100
20.1
+0.2
(36)
70.2 220.3 230.3 280.3
Collector-Emitter Voltage VCE (V)
Base Current IB (mA)
Base-Emitter Voltage VBE (V)
hFE IC Characteristics (Typical)

DC Current Gain hFE
j-a (C/W)
j-a t
3
Characteristics
50000 125C 10000 5000 25C
(VCE = 4V)
30C
0.5
1000 500 200 0.03
0.1 1 5 10 50 100 500 1000 2000
0.1
0.5
10
Time t (ms)

30 80
PC Ta Derating
10
10
D.
10 m 0m s s
Maximum Power Dissipation Pc (W)
60
W ith
In ite fin at he
1 0.5
40
k sin
20
10
50
100
200
3.5 0
Ambient Temperature Ta (C)
165
SAP09P
(Complement to type SAP09N)
Equivalent circuit
D R: 70 Typ.
E Emitter resistor RE: 0.22 Typ. S
B C

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCE = 150V VEB = 5V IC = 30mA VCE = 4V, IC = 6A IC = 6A, IB = 6mA IC = 6A, IB = 6mA VCE = 20V, IC = 40mA IF = 2.5mA IE =1A 0.176 1230 1580 0.22 0.264 150 5000 20000 2.0 2.5 V V mV mV Ratings
min typ max

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 150 150 5 10 1 80 ( Tc=25C) 10 150 40 to +150
(Ta=25C) Unit V V V A A W mA C C
( Ta = 25C ) Unit
External Dimensions
3.30.2 15.40.3 9.9 0.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
100 100
A A V
3.4max
a b
220.3
230.3
280.3
10.1 (41) (18) 0.65 0.1

+0.2
1.35 0.1 (2.5)

+0.2 0.8 0.1
+0.2 +0.2
0.65 0.1
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1
2.540.1 3.810.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
E S
D B

2.0mA 2.5mA
10m A
3 1. mA

3 10
IC VBE Temperature Characteristics (Typical)

(VCE = 4V)
10
1.0mA
0.8mA
1.5mA 1.8mA
8 2 IC = 8A 6A 4A 1
0.5mA
0.3mA 4 IB = 0.2mA 2
4 125C 25C 2 30C
0 0.3
10
50
100
20.1
(36)
70.2

DC Current Gain hFE
125C 10000 5000 25C 30C
j-a (C/W)
j-a t
3
Characteristics
50000
(VCE = 4V )
0.5
1000 500 200 0.03
0.1 1 5 10 50 100 500 1000 2000
0.1
0.5
10
Time t (ms)

30 80
PC Ta Derating
10
10
D.
10 m s 0m s
60
W ith
fin In ite he s at
1 0.5
40
in k
Without Heatsink Natural Cooling 0.1 0.05 3
20
10
50
100
200
3.5 0
166
SAP10N
Equivalent circuit
B
R: 70 Typ.

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCB =150V VEB =5V IC = 30mA VCE = 4V, IC =7A IC =7A, IB =7mA IC =7A, IB =7mA VCE =20V, IC =40mA IF =2.5mA IE = 1A 0.176 1200 705 0.22 0.264 150 5000 20000 2.0 2.5 V V mV mV Ratings
min typ max

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 150 150 5 12 1 100( Tc=25C) 10 150 40 to +150 Unit V V V A A W mA C C
( Ta = 25C ) Unit A A V
External Dimensions
3.30.2 15.40.3 9.90.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
100 100
3.4max
a b
10.1 (41)
(2.5)
0.65 0.1 0.8 0.1

+0.2
+0.2
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1
2.540.1 3.810.1
(18)
+0.2 1.35 0.1
0.65 0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
B D
S E

2.0m

3 12

(VCE =4V)
10mA 2.5mA
12
m 1.5
1.2m
1.0mA
0.8mA
10
0.6mA
0.4mA 4
IC =10A 7A 1 5A
125C 25C
IB =0.2mA
30C
0 0.4
10
50
100
200
20.1
+0.2
(36)
70.2 220.3 0.3 23 280.3
2.5

DC Current Gain hFE
j-a (C/W)
j-a t
3
Characteristics
40000
(VCE =4V)
125C 10000 5000 25C 30C
0.5
1000 0.3
0.1 1 5 10 50 100 500 1000 2000
0.5
10 12
Time t (ms)

30
10
PC Ta Derating
100
10
10
0m
80
ith W
D.
In
60
fin ite at he
1 0.5
k sin
40
10
50
100
200
3.5 0
167
SAP10P
Equivalent circuit
D R: 70 Typ.
B C

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCB =150V VEB = 5V IC =30mA VCE =4V, IC = 7A IC =7A, IB =7mA IC =7A, IB =7mA VCE = 20V, IC = 40mA IF =2.5mA IE = 1A 0.176 1210 1540 0.22 0.264 150 5000 20000 2.0 2.5 V V mV mV Ratings
min typ max

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 150 150 5 12 1 100 ( Tc = 25C) 10 150 40 to +150 Unit V V V A A W mA C C
External Dimensions
3.30.2 15.40.3 9.90.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
100 100
3.4max
a b
10.1 (41)
(2.5)
0.65 0.1
+0.2 0.8 0.1
+0.2
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1
2.540.1 3.810.1
(18)
1.35 0.1
+0.2
0.65 0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
E S
D B

10mA 2.5mA

3 12

(VCE = 4V)
12
2
5m 1.
.0
1.2m
A
1.0mA
0.8mA
10
0.6mA
0.4mA 4 IB =0.2mA
IC =10A 7A 1 5A
6 125C 4 25C 2 30C
0 0.4
10
50
100 200
20.1
+0.2
(36)
70.2 220.3 0.3 23 280.3
2.5

DC Current Gain hFE
125C
j-a (C/W)
j-a t
3
Characteristics
40000
(VCE = 4V)
10000 5000
25C
30C
0.5
1000 0.3
0.1 1 5 10 50 100 500 1000 2000
0.5
10 12
Time t (ms)

30
10
PC Ta Derating
100
10
10
0m
80
W
D.
ith f In
60
in ite he s at
1 0.5
in k
40
Without Heatsink Natural Cooling 0.1 0.05 3
10
50
100
200
3.5 0
168
SAP16N
Equivalent circuit
B R: 100 Typ.

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE REB Conditions VCB =160V VEB = 5V IC = 30mA VCE = 4V, IC = 10A IC = 10A, IB = 10mA IC = 10A, IB = 10mA VCE = 20V, IC = 40mA IF = 2.5mA IE = 1A 0.176 90 1190 705 0.22 100 0.264 110 160 5000 20000 2.0 2.5 V V mV mV Ratings
min typ max

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 160 160 5 15 1 150( Tc = 25C) 10 150 40 to +150 Unit V V V A A W mA C C
External Dimensions
3.30.2 15.40.3 9.90.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
100 100
3.4max
a b
10.1 (41)
(2.5)
0.65 0.1
+0.2 0.8 0.1
+0.2
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1
2.540.1 3.810.1
(18)
1.35 0.1
+0.2
0.65 0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)

B D C S E

50mA 5.0mA 3.0mA

3 15

(VCE =4V)
15
2.
0m
1.5m
A
1.2mA
1.0mA
10
0.8mA
10
IC =15A 10A 1 5A
0.5mA 5 IB =0.3mA
125C 25C 30C
0 0.4
10
50
100
200
20.1
+0.2
(36)
70.2 220.3 0.3 23 280.3
2.5

DC Current Gain hFE
j-a (C/W)
j-a t
3
Characteristics
40000
(VCE =4V)
125C 10000 5000 25C 30C
0.5
1000 0.3
0.1 1 5 10 50 100 500 1000 2000
0.5
10
15
Time t (ms)

40
10
0m s
Di IF VF Characteristics (Typical)
10 150
PC Ta Derating
10
D.
Forward Current IF (mA)
10 5
ith W
100
In ite fin a he in ts k
1 0.5
50
Without Heatsink Natural Cooling 0.1 0.05 3 5 10 50 100 200 1 0 0.5 1.0 1.5 2.0
3.5 0
Forward Voltage VF ( V )
169
SAP16P
Equivalent circuit
R: 100 Typ. D
B C

Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE REB Conditions VCB = 160V VEB = 5V IC = 30mA VCE = 4V, IC=10A IC = 10A, IB =10mA IC = 10A, IB = 10mA VCE = 20V, IC = 40mA IF = 2.5mA IE = 1A 0.176 90 1200 1540 0.22 100 0.264 110 160 5000 20000 2.0 2.5 V V mV mV Ratings
min typ max

Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 160 160 5 15 1 150 ( Tc=25C) 10 150 40 to +150 Unit V V V A A W mA C C
External Dimensions
3.30.2 15.40.3 9.90.2 3.20.2 50.2
(Unit: mm)
4.50.2 1.60.2
100 100
3.4max
a b
10.1 (41)
(2.5)
0.65 0.1
+0.2 0.8 0.1
+0.2
2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1
2.540.1 3.810.1
(18)
1.35 0.1
+0.2
0.65 0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)

E S C D B

50mA 5. 0m A 3 .0m A

3 15

(VCE =4V)
15
m 2.0
1.5m
1.2m
1.0mA
10
0.8mA
2 IC = 15A 10A 1 5A
10
0.5mA
5 IB = 0.3mA
125C 25C 30C
0 0.4
10
50
100 200
20.1
+0.2
(36)
70.2 220.3 0.3 23 280.3
2.5

DC Current Gain hFE
125C
j-a (C/W)
j-a t
3
Characteristics
40000
(VCE = 4V)
10000 5000
25C
30C
0.5
1000 0.3
0.1 1 5 10 50 100 500 1000 2000
0.5
10
15
Time t (ms)

40
10
0m s
Di IF VF Characteristics (Typical)
10 150
PC Ta Derating
D.
5
Forward Current IF (mA)
10
10
ith
100
In fin ite he at sin k
1 0.5
50
Without Heatsink Natural Cooling 0.1 0.05 3 1 0 0.5 1.0 1.5 2.0
10
50
100
200
3.5 0
Forward Voltage VF ( V )
170
SAP Series Application Information

1. Recommended Operating Conditions
Add a variable resistor (VR) between diode terminals to adjust the idling current. The
resistor having 0 to 200 is to be used. Adjust the forward current flowing over the diodes at 2.5mA. Adjust the idling current at 40mA with the external variable resistor. Both the temperature coefficients for the transistor and the diodes are matched under the above conditions. Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation. The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward current (approximately 0.2mV/ to 1mA), and the coefficient of the total transistors (its variable value) also becomes smaller with a larger idling current (approximately 0.1mV/ to 10mA), but the both variable values are small. Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation is to be confirmed by using an experimental equipment or board.
+VCC
NPN
B
D 2.5mA D E E
40mA
External variable resistor (VR) (0 to 200)
B C VCC
PNP
171
2. External Variable Resistor

Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC = 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional external variable resistor. The relations are shown as below: Total VF of Diode V=0 to 500mV Total VBE of Transistor + Total VRE of Emitter Resistor
The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k) each. Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the total voltage drops of the two emitter resistors) as V. Minimum VBE Maximum VF variations of the diodes = 0 Maximum VBE Minimum VF variations of the diodes = 500mV The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore 500mV 2.5mA = 200
Consequently, the applicable VR value is to be 0 to 200
VBE Min. (P and N: hFE Max.) IC
VBE Max. (P and N: hFE Min.)
40mA
Di VF
Variations
VBE TR VBE
Variations
VF =500mV
172
3. Characteristics of the temperature compensation diodes

The several temperature compensation diodes are connected in series, so the forward voltage is varied with small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over with minimum VR of 0. On the contrary, in case the forward current is set at 2.5mA or below, the idling current may not reach to 40mA with maximum VR of 200.
10.0 Ta=25C
PN-Di 5.0
SBD (5 diodes Total)
PNDi+SBD
IF (mA)
1.0 0 500 1000 1500 2000 2500 3000
VF (mV)
IF VF Characteristics
4. Parallel push-pull application

Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE.
To be adjusted individually
173
5. Destruction capacity of the built-in emitter resistor

A thick-film resistor is used for the built-in resistor. The thick-film resistor has weaker destruction point in the Pc area (especially for large current flowing area) than that of the transistor chip itself. There is less concern, however, as this is subject to the area beyond an Are of Safe Operation (A.S.O.). However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it may cause the emitter resistor to be destroyed before the transistor itself is destroyed. Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of discrete device configurations. In the application of car audio amplifiers, the same manners as the above need to be considered because the large current is flowed at low impedance. In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most sever standard UL94V0. However it is recommended that the careful consideration be given to a protection circuit, and the protection circuits should be provided appropriately in due course. If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing) terminal shown as below.
IC Transistor destruction point Thick-film resistor destruction point

B C
A.S.O. Curve
S D
External emitter resistor

E
Output terminal
VCE
174
MEMO
175
Discontinued Parts Guide

Discontinued Parts 2SA744to745 2SA746to747 2SA764to765 2SA807to808 2SA878 2SA892 2SA907to909 2SA971 2SA980to982 2SA1067 2SA1068 2SA1102 2SA1103 2SA1104 2SA1105 2SA1106 2SA1116 2SA1117 2SA1135 2SA1169 2SA1170 2SA1187 2SA1205 2SA1355 2SB622 2SB711to712 2SB1005 2SB1476 2SB1586 2SC1107 2SC1108 2SC1109 2SC1110 2SC1111to1112 2SC1113 2SC1114 2SC1115to1116 2SC1402to1403 2SC1436 2SC1437 2SC1440to1441 2SC1442to1443 2SC1444to1445 2SC1454 2SC1477 2SC1504 2SC1577to1578 2SC1579to1580 2SC1584to1585 2SC1618to1619 2SC1629 2SC1664 2SC1768 2SC1777 2SC1783 2SC1786 2SC1828 Replace ment Parts 2SA1694to1695 2SA1695 2SA1725to1726 2SA1693to1694 2SB1351 2SA1215to1216,1295 2SA1694 2SA1693 2SA1694 2SA1694 2SA1695 2SA1695 2SA1493 2SA1494 2SA1693 2SA1493 2SA1494 2SA1746 2SA1262,1488 2SB1259,1351 2SB1257 2SB1624 2SB1625 2SC3179,3851 2SC3851A 2SC3179,3851 2SC3851A 2SC4467to4468 2SC4511to4512 2SC4468 2SC4467to4468 2SC4511to4512 2SC2023 2SC3833,3831 2SC4706 2SC2921-2922,3264 2SC4466-4467 2SD2045 2SC4558 2SC3832,3830 Discontinued Parts 2SC1829 2SC1830 2SC1831 2SC1832 2SC1888to1889 2SC2022 2SC2147 2SC2198 2SC2199 2SC2256 2SC2260to2262 2SC2302 2SC2303 2SC2304 2SC2305 2SC2306 2SC2307 2SC2317 2SC2354 2SC2364 2SC2365 2SC2491 2SC2492 2SC2493 2SC2577 2SC2578 2SC2579 2SC2580 2SC2581 2SC2607 2SC2608 2SC2665 2SC2723 2SC2761 2SC2773 2SC2774 2SC2809 2SC2810A 2SC2825 2SC2838 2SC2900 2SC3409 2SC3520 2SC3706 2SC3909 2SC4023 2SC4199,4199A 2SC4302 2SC4303,4303A 2SC4494 2SC4756 2SD15to18 2SD80to84 2SD90to94 2SD163to166 2SD201to203 2SD211to214 Replacement Parts 2SD2082,2083 2SC3852,3852A 2SC2023 2SC4024 2SC4131 2SC4467 2SC3832 2SC3833 2SC3833 2SC4140 2SC3833 2SD2016 2SC2023 2SC3831 2SC4024 2SC4466 2SC4467 2SC4467 2SC4468 2SC4468 2SC3857 2SC3858 2SC4466 2SC4140 2SC3857 2SC3858 2SC4820 2SD2045 2SC3679 2SC4140 2SC3680 2SC5124 2SC5124 2SC4301 2SC5002 2SC4495 2SC5002 2SC4468 2SC4466,4467 2SC3179,3851,3851A 2SC4468 2SC4466to4467 2SC4468 Repair Parts 2SA768to769 2SA770to771 2SA957to958 2SA1489 2SA1490 2SA1491 2SA1643 2SA1670 2SA1671 2SA1672 2SB1624 2SB1625 2SB1626 2SC1826to1827 2SC1983to1984 2SC1985to1986 2SC2167to2168 2SC2315to2316 2SC2810 2SC3300 2SC3853 2SC3854 2SC3855 2SC4385 2SC4386 2SC4387 2SC4503 2SC4558 2SC4820 2SD2493 2SD2494 2SD2495 Replacement Parts 2SA1262,1488,1488A 2SA1725,1726 2SA1667,1668 2SA1693 2SA1694 2SA1695 2SA1725 2SA1907 2SA1908 2SA1909 2SB1685 2SB1687 2SB1686 2SC3179,3851,3851A 2SC3852,3852A 2SC4511,4512 2SC4381,4382 2SC4558 2SC3890 2SC4131 2SC4466 2SC4467 2SC4468 2SC5099 2SC5100 2SC5101 2SD2083 2SD2495 2SC4518 2SD2641 2SD2643 2SD2642 Discontinued Parts 2SD219to221 2SD219Fto221F 2SD222to224 2SD236to238 2SD241to244 2SD256to259 2SD419to421 2SD556to557 2SD593to594 2SD605 2SD606 2SD614to615 2SD617 2SD721 2SD722 2SD807 2SD810 2SD971 2SD972 2SD1031 2SD1170 2SD1532 2SD2231 2SD2437 Replacement Parts 2SC3179,3851,3851A 2SC3179,3851,3851A 2SC3179,3851,3851A 2SC3179,3851,3851A 2SC3179,3851,3851A 2SC3179,3851,3851A 2SD1769,1785 2SC4468 2SC4020 2SD1769,1785 2SD2082 2SD2081 2SD2081 2SC3679 2SC4024 2SD1796 2SD1769,1785 2SD2045 2SD2015 2SD2493 2SD2494
176
Sanken Electric Co.,Ltd.

1-11-1 Nishi-Ikebukuro,Toshima-ku, Tokyo PHONE: 03-3986-6164 FAX: 03-3986-8637
Overseas Sales Offices Asia

Sanken Electric Korea Co.,Ltd.
SK Life B/D 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea PHONE: 82-2-714-3700 FAX: 82-2-3272-2145
Taiwan Sanken Electric Co.,Ltd.

Room 902, No.88, Chung Hsiao E. Rd., Sec. 2 Taipei, Taiwan R.O.C. PHONE: 886-2-2356-8161 FAX: 886-2-2356-8261
Sanken Electric Singapore Pte.Ltd.

150 Beach Road, #14-03 The Gateway West, Singapore 0718 PHONE: 291-4755 FAX: 297-1744
Sanken Electric Hong Kong Co.,Ltd.

1018 Ocean Centre, Canton Road, Kowloon, Hong Kong PHONE: 2735-5262 FAX: 2735-5494
North America Allegro MicroSystems,Inc.

115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615, U.S.A. PHONE: (508) 853-5000 FAX: (508) 853-7861
Europe Allegro MicroSystems Europe Limited.

Balfour House, Churchfield Road, Walton-on-Thames, Surrey KT12 2TD, U.K. PHONE: 01932-253355 FAX: 01932-246622
Contents of this catalog are subject to change due to modification
PRINTED in JAPAN H1-T01EE0-0107020SB

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POWER TRANSISTORS

SANKEN ELECTRIC CO.,LTD.

Bulletin No T01EE0 ( July,2001)

SANKEN POWER TRANSISTORS

Transistor Selection Guide

380 300 250 230 200

A1668 C4382 A1859A C4883A

C5271 D2557 D2558

CollectorEmitter Voltage VCEO(V)

A1667 A1859 C4381 C4883

B1559 B1587 D2389 D2438

C3834 C3835 C4153

A1694 A1908 C4467 C5100

A1303 A1860 C3284 C4886

B1382 B1420 D2082

A1488A C3851A D2014

A1262 A1488 B1257 C3179 C3851 D1796 A2042 C4024

A1568 B1351 B1352 C4065

A1567 A1746 C4064 C5370 12

Collector Current IC(A)

Transistor Selection Guide

400 600 500 600

Transistor Selection Guide

2SA1860/2SC4886 2SA1186/2SC2837 2SA1303/2SC3284 2SA1386/2SC3519 2SA1386A/2SC3519A 2SA1294/2SC3263 2SA1215/2SC2921 2SA1216/2SC2922 2SA1295/2SC3264

Part No. SAP09P/SAP09N SAP10P/SAP10N SAP16P/SAP16N

Transistor Selection Guide

s Temperature compensation Transistors and Driver Transistors

4. Applications Considered on Reliability

Collector Current Ic(A)

(a) (b) Failure Rate ()

General Electronic Equipment or Components

SOA(Safe Operating Area)

Collector-Emitter Voltage Vce(V)

Figure 1 Bath Tub Curve

3. Quantitative Expression of Reliability

Max. Allowable Voltage Vceo(Max)

1. Infant failure 2. Random failure 3. Wear-out failure

o akd Bre ary wer Po bl e

LTPD(%) *5/1000hrs 5/1000hrs 5/1000hrs 5/1000hrs 5/1000hrs

Heat Cycle Test

Heat Shock Test

Soldering Heat Test

Reliability Standard : 60%

Figure 3 Quality Assurance System

Screw Tightening Torque

Collector Current Derating coefficient DF (%)

Tc=25C Collector-Emitter Voltage VCE (V)

Case Temp Tc (C)

Fig.1 Safe Operating Area

Fig.2 Derating Curve of Safe Operating Area

Insulation Bush for MT-25 (TO220)

5.00.1 19.40.1 R0.5 7.0

sSwitching Characteristics Test Circuit/Measurement Wave Forms

Ta=25C unless otherwise specified.

External Dimensions MT-100(TO3P)

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

sTypical Switching Characteristics (Common Emitter)