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NPN Silicon RF Power Transistor: Description: TPV387 Package Style 500 6L FLG
NPN Silicon RF Power Transistor: Description: TPV387 Package Style 500 6L FLG
NPN Silicon RF Power Transistor: Description: TPV387 Package Style 500 6L FLG
FEATURES INCLUDE:
Gold Metalization Emitter Ballast Resistors Internal Input Matching Common Emitter
MAXIMUM RATINGS
IC VCE TJ T STG JC 16 A (CONT) 35 V -65 OC to +200 OC -65 OC to +200 OC 1.0 OC/W
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV CEO BV CER BV CBO BV EBO hFE Cob GPE IC = 100 mA IC = 100 mA IC = 50 mA IE = 20 mA VCE = 5.0 V VCB = 30 V VCC = 28 V VCC = 28 V Pout = 24 W VCE = 28 V IMD1 Po1dB
TC = 25 OC
NONETEST CONDITIONS
RBE = 10
UNITS
V V V V
20 130 13
100 150
--pF dB
Pref = 24 W IE = 3.5 A
SOUND CARRIER = -7 dB
-50 90
dB W
REV. A
VCC = 28 V
IQ = 200 mA
f = 225 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.