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    12 SC Diode Equivalent Circuits

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    Eng-Mohammed Kayed
    This document discusses diode equivalent circuits and how the impedance of diodes varies with frequency. It describes how vertical and lateral diodes have different access resistances due to their contact geometry. For vertical diodes, the access resistance is modeled as a series combination of resistances for the top and bottom contacts. For high frequencies, the equivalent circuit includes parasitic capacitances and inductances. Calculations show that as frequency increases, the real part of a diode's impedance remains constant while the imaginary part increases due to the effects of these parasitic components.

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    12 SC Diode Equivalent Circuits

    Uploaded by

    Eng-Mohammed Kayed
    30 views10 pages
    This document discusses diode equivalent circuits and how the impedance of diodes varies with frequency. It describes how vertical and lateral diodes have different access resistances due to their contact geometry. For vertical diodes, the access resistance is modeled as a series combination of resistances for the top and bottom contacts. For high frequencies, the equivalent circuit includes parasitic capacitances and inductances. Calculations show that as frequency increases, the real part of a diode's impedance remains constant while the imaginary part increases due to the effects of these parasitic components.

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    This document discusses diode equivalent circuits and how the impedance of diodes varies with frequency. It describes how vertical and lateral diodes have different access resistances due to their contact geometry. For vertical diodes, the access resistance is modeled as a series combination of resistances for the top and bottom contacts. For high frequencies, the equivalent circuit includes parasitic capacitances and inductances. Calculations show that as frequency increases, the real part of a diode's impedance remains constant while the imaginary part increases due to the effects of these parasitic components.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    30 views10 pages

    12 SC Diode Equivalent Circuits

    Uploaded by

    Eng-Mohammed Kayed
    This document discusses diode equivalent circuits and how the impedance of diodes varies with frequency. It describes how vertical and lateral diodes have different access resistances due to their contact geometry. For vertical diodes, the access resistance is modeled as a series combination of resistances for the top and bottom contacts. For high frequencies, the equivalent circuit includes parasitic capacitances and inductances. Calculations show that as frequency increases, the real part of a diode's impedance remains constant while the imaginary part increases due to the effects of these parasitic components.

    Copyright:

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    of 10

    Diode equivalent circuits

    1. Access resistances in vertical devices


    Top metal contact
    Area = A There is an access resistance connected in series with an ideal diode D (the diode can be of any type, i.e. rectifier, LED, Varicap, Tunnel diode etc.).

    Rcp

    p-type

    Rsp D

    dp

    Total access (series) resistance for the diode on the left:

    Rs = Rcp+Rsp + Rsn + Rcn


    n-type

    Rcn

    Rsn

    dn

    Rcp= cp/A; Rcn= cn/A


    Note the difference between lateral and vertical contacts. For lateral contacts, a unit-width contact resistance (mm or cm) is typically used. For vertical contacts, a unit-area specific resistance (mm2 or cm2) is typically used.

    Bottom metal contact

    1. Access resistances in vertical devices (cont.)


    Top metal contact
    Area = A The series resistance associated with the diode base regions: Rsp and Rsn:

    Rcp

    p-type

    Rsp D

    dp

    1 Rsp = p ; where p = A q pp is the resistivity of the p material

    dp

    n-type

    Rcn

    Rsn

    dn

    d 1 Rsn = n n ; where n = A q n n is the resistivity of the n material

    Bottom metal contact

    1. Access resistances in vertical devices (cont.) Diode low-frequency equivalent circuit


    Top metal contact
    Area = A

    Rcp

    p-type

    Rsp D
    V

    Rs D

    Rs = Rcp+Rsp + Rsn + Rcn

    n-type

    Rcn

    Rsn
    For a regular p-n junction diode, the total voltage drop across the device:

    Bottom metal contact

    V = VD + VRS VD = (kT/q) ln(I/Is+1); VRs = I Rs

    1. Access resistances in vertical devices (cont.) Diode low-frequency equivalent circuit


    Top metal contact
    Area = A
    5

    Ignoring Rs

    IRs

    Rcp

    p-type

    Rsp
    3

    D
    I, A

    Rs
    2 1 0 0 -1 0.2 0.4
    V, V

    n-type

    D Rsn

    Rcn

    0.6

    0.8

    Bottom metal contact

    2. Access resistances in lateral devices Example: planar GaAs Schottky diode

    Schottky

    Ohmic
    W

    Total access (series) resistance for the diode on the left: Rs = Rc+Rgap+ RSch Rc = Rc1 /W; Rgap = Rsq Lgap / W;

    n-GaAs i-GaAs

    LSch

    Lgap

    LC

    RSch Rsq (LSch / 3) / W; - accounts for the current spreading under the Schottky contact.

    3. High-frequency equivalent circuits Example: vertical Schottky diode


    At high frequencies, capacitances and inductances associated with the diode itself and the package have significant impact on the device performance

    D
    n-type

    CB

    A CB = S 0 Wdepl
    capacitance associated with the diode depletion region Cp Cp - the capacitance associated with the device contact pads or package

    Rs(incl. Rc)

    Lp

    Lp - the inductance associated with the device wiring and/or package

    3. High-frequency equivalent circuits Frequency dependence of the device impedance


    Example: Consider Schottky diode with the DC differential resistance of 10 . Comment: the differential resistance, R = V = kT I 0.026V at 300 K ; d I I q

    CB

    Suppose: CB = 20 pF; Cp = 5 pF; Rs = 1 ; Lp = 0.5 nH

    Rs

    Cp

    The diode impedance can be found as follows: 1. Yd1 = 1/Rd + jCB; Zd1 = 1/ Yd1; where =2f; 2. Zd2 = Zd1 + Rs; Yd2 = 1/Zd2;

    Lp

    3. Yd3 = Yd2 + jCp; Zd3 = 1/ Yd3; 4. Zdiode = Zd3 + jLp;

    Diode impedance frequency dependence


    %Diode impedance frequency dependence %Suppose: Rd=10 Ohm; %CB = 20 pF; Cp = 5 pF; %Rs = 1 Ohm; Lp = 0.5 nH Rd=10; CB = 20e-12; Cp = 5e-12; Rs = 1; Lp = 0.5e-9; %<<<Calculations>>>>> f=1e6:1e6:3e9; om=2*pi*f; Yd1 = 1/Rd + i*om*CB; Zd1 = 1./Yd1; Zd2 = Zd1 + Rs; Yd2 = 1./Zd2; Yd3 = Yd2 + i*om*Cp; Zd3 = 1./Yd3; Zdiode = Zd3 + i*om*Lp; Req=real(Zdiode); Xeq=imag(Zdiode); figure(1); plot(f*1e-6,Req); figure(2); plot(f*1e-6,Xeq);

    Diode impedance frequency dependence

    CB

    Rs

    Cp

    Lp

    Diode impedance frequency dependence

    CB

    Rs

    Cp

    Lp

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