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7MBR25SA120 50 Fuji
7MBR25SA120 50 Fuji
IGBT Modules
Features
Low VCE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit
Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply
Continuous
Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake
1 device
Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque Converter
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 Nm (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=25A VGE=15V RG=51 IF=25A chip terminal Min.
7MBR25SA120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.2 2.6 3000 0.35 0.25 0.1 0.45 0.08 2.3 2.4 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V IF=25A chip terminal VR=1600V T=25C T=100C T=25/50C
2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
Converter
mA V mA K
Thermistor
465 3305
Rth(j-c)
C/W
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
[T h e rm is to r] 8 9
2 0 (G u)
1 8 (G v)
1 6 (G w )
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
60
7MBR25SA120
Tj= 25 C (typ.)
VGE= 20V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
40
40
10V 30
30
10V
20
20
10
10 8V 8V
50
Tj= 25 C
Collector current : Ic [ A ]
40
30
20
10
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies
600
15
1000
400
10
200
0 250
IGBT Modules
7MBR25SA120
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=25C
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=125C
toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500
ton
ton tr
tr
tf 100
100 tf
50 0 10 20 Collector current : Ic [ A ] 30 40
50 0 10 20 Collector current : Ic [ A ] 30 40
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51
Eon(125 C)
1000
Eon(25 C)
500
toff
Eoff(125 C)
Eoff(25 C) Err(125 C)
o
50 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 Eon Collector current : Ic [ A ] Eoff 10 Err 0 10 50 100
]
40
10
30
20
0 500 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg [ Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR25SA120
Tj=125 C 50
Tj=25 C trr(125 C)
o
Forward current : IF [ A ]
40
100 trr(25 C)
o
30
20
10
Irr(125 C)
50
Tj= 25 C
Tj= 125 C
Forward current : IF [ A ]
40
30
20
10
0 0.0
0.4
0.8
1.2
1.6
2.0
0.1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
20
40
60
80
o
100
120
140
160
180
Temperature [
C]
IGBT Modules
7MBR25SA120
Tj= 25 C (typ.)
15V VGE= 20V 12V
30
30
VGE= 20V
15V
12V
25
20 10V 15
20
10V
15
10
10
Tj= 25 C (typ.)
Tj= 25 C 30
Tj= 125 C 8
25 Collector current : Ic [ A ]
20
15
10
C
25
800 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ]
600
15
400
10
200
0 150
IGBT Modules
Outline Drawings, mm
7MBR25SA120