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    Bulk CMOS Process Description: - N-Well Process - Single Metal Only Depicted - Double Poly

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    Pushparaj Karu
    This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

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    Bulk CMOS Process Description: - N-Well Process - Single Metal Only Depicted - Double Poly

    Uploaded by

    Pushparaj Karu
    28 views40 pages
    This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

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    Original Title

    EE 434 CMOS Process Flow Fall 2006

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    This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as ppt, pdf, or txt
    28 views40 pages

    Bulk CMOS Process Description: - N-Well Process - Single Metal Only Depicted - Double Poly

    Uploaded by

    Pushparaj Karu
    This document summarizes the basic steps of a bulk CMOS process using a single metal layer and double poly layers. It outlines the key photolithography steps to fabricate n-channel and p-channel MOSFETs, resistors, and capacitors. These include n-well implantation, field oxide growth, poly 1 and 2 deposition, p-type diffusion, contact formation, and metal 1 deposition. Cross-section views are provided to illustrate each processing step.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as ppt, pdf, or txt
    of 40

    Bulk CMOS Process Description

    N-well process Single Metal Only Depicted Double Poly

    Prepared by Randy Geiger, September 2001

    Components Shown
    n-channel MOSFET p-channel MOSFET Poly Resistor Doubly Poly Capacitor

    Consider Basic Components Only


    Well Contacts and Guard Rings Will be Discussed Later

    D
    G S B S B

    D
    B

    n-channel MOSFET

    D
    G S B W L B B

    Capacitor

    Resistor p-channel MOSFET

    n-channel MOSFET

    N-well Mask A A

    N-well Mask A A

    Detailed Description of First Photolithographic Steps Only


    Top View Cross-Section View

    Blank Wafer

    Implant
    A

    n-well Photoresist Mask A p-doped Substrate ~ B B Develop Expose

    Develop Exposure Photoresist N-well Mask

    A-A Section

    B-B Section

    Implant

    A-A Section

    B-B Section

    N-well Mask

    A-A Section

    B-B Section

    Active Mask A

    Active Mask A A

    Active Mask Field Oxide

    A-A Section Field Oxide Field Oxide Field Oxide

    B-B Section

    Poly1 Mask A A

    Poly1 Mask A A

    Capacitor

    Resistor P-channel MOSFET

    n-channel MOSFET

    Poly 1 Mask

    A-A Section Gate Oxide Gate Oxide

    B-B Section

    Poly 2 Mask A

    Poly 2 Mask A A

    Poly 2 Mask

    A-A Section

    B-B Section

    P-Select

    P-Select

    P-Select Mask n-diffusion

    A-A Section n-diffusion

    B-B Section

    P-Select Mask p-diffusion

    A-A Section p-diffusion

    B-B Section

    Contact Mask A

    Contact Mask A A

    Contact Mask

    A-A Section

    B-B Section

    Metal 1 Mask

    Metal 1 Mask

    Metal Mask

    A-A Section

    B-B Section

    Capacitor

    Resistor P-channel MOSFET

    n-channel MOSFET

    Thats all folks!

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