MG600J2YS61A

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
Compact IGBT
Series Module
600 Amperes/600 Volts

A
D L
J K N
M
W
V

E2 C1

C H B F E
DETAIL "A"
C2E1

R R S T
Q Z
P

Description:
Y Powerex Dual IGBTMOD™
X
Q
X
Compact IGBT Series Modules
are designed for use in switching
G applications. Each module consists
C1 of two IGBT Transistors in a half-
bridge configuration, with each
7
5
BB
8
transistor having a reverse-
6
5
AA
connected super-fast recovery
6 FO
free-wheel diode. All components
7 E1/C2 3 4
1
BB
2
and interconnects are isolated from
4 OT the heat sinking baseplate, offering
1
2 FO
simplified system assembly and
BB
3
thermal management.
DETAIL "A"
E2
SIGNAL TERMINAL Features:
1 G(L)
2 FO(L)
3 E(L)
4 VD
5 G(H)
6 FO(H)
7 E(H)
8 OPEN
£ Over-Current and
Over-Temperature Protection
£ Low VCE(sat)
Outline Drawing and Circuit Diagram
£ Isolated Baseplate for Easy
Dimensions Inches Millimeters Dimensions Inches Millimeters Heat Sinking
A 4.80±0.04 122.0±1.0 P M6 M6
B 1.97±0.01 50.0±0.3 Q 0.79±0.03 20.0±0.8 Applications:
C 1.61±0.03 41.0±0.8 R 1.02±0.03 26.0±0.8 £ AC Motor Control
D 4.33±0.01 110.0±0.3 S 1.44±0.03 36.7±0.8 £ Motion/Servo Control
E 2.44±0.04 62.0±1.0 T 0.24 Rad. 6.0 Rad.
£ UPS
F 2.32±0.02 59.0±0.5 U 0.02 0.64
£ Welding Power Supplies
G 4.69±0.02 119.0±0.5 V 0.60 15.3
H 0.60 15.24 W 0.41±0.03 10.5±0.8
£ Laser Power Supplies
J 0.63 16.0 X 1.02 -0.01/+0.04 26.0 -0.3/+1.0
Ordering Information:
K 0.51 13.0 Y 1.48 -0.02/+0.04 37.5 -0.5/+1.0
Example: Select the complete
L 0.24 6.0 Z 0.01 Dia. 3.0 Dia.
M 0.22 Dia. 5.5 Dia. AA 1.00±0.023 25.4±0.6
part number from the table below
N 1.42±0.03 36.0±0.8 BB 0.10 2.54 -i.e. MG600J2YS61A is a
600V (VCES), 600 Ampere
Dual IGBTMOD™ Compact IGBT
Series Module.
Type Current Rating VCES
Amperes Volts (x 10)
MG 600 60

5/05 1
 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol MG600J2YS61A Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Operating Temperature Range Tope -20 ~ 100 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 375 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts

IGBT Inverter Sector

Collector-Emitter Voltage VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current (TC = 25°C) IC 600 Amperes
Peak Collector Current (TC = 25°C) ICP 1200 Amperes
Emitter Current (TC = 25°C) IE 600 Amperes
Peak Emitter Current (TC = 25°C) IEM 1200 Amperes
Collector Dissipation (TC = 25°C) PC 2770 Watts

IGBT Control Sector

Control Voltage (OT) VD 20 Volts
Fault Input Voltage VFO 20 Volts
Fault Input Current IFO 20 mA

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Gate Leakage Current IGES VGE = ±20V, VCE = 0V — — -4 / +3 mA
VGE = 10V, VCE = 0V — — 100 nA
Collector-Emitter Cutoff Current ICES VCE = 600V, VGE = 0V — — 1.0 mA
Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 600mA 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 600A, Tj = 25°C — 2.2 2.5 Volts
VGE = 15V, IC = 600A, Tj = 125°C — — 2.8 Volts
Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 125 — nF
Inductive Load td(on) 0.1 — 1.0 µs
Switching toff VCC = 300V, IC = 600A, — — 2.0 µs
Times tf VGE = ±15V, RG = 5.1Ω — — 0.5 µs
Reverse Recovery Time trr — — 0.5 µs
Emitter-Collector Voltage VEC IE = 600A — 2.2 2.6 Volts

2 5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector
Fault Output Current OC VGE = 15V 720 — — A
Over-Temperature OT — 100 — 125 °C
Fault Output Delay Time td(Fo) VCC = 300V, VGE = ±15V — — 6.5 µs

Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q IGBT (Per 1/2 Module) — — 0.045 °C/Watt
Rth(j-c)D FWDi (Per 1/2 Module) — — 0.068 °C/Watt
Contact Thermal Resistance Rth(c-f) — — 0.013 — °C/Watt

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across C1-E2 Terminals ≤375 Volts
Gate Voltage VGE — 13.8 ~ 16 Volts
Gate Resistance RG — ≥5.1 Ω
Switching Frequency fC — 0 ~ 20 kHz

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS FREE-WHEEL DIODE CHARACTERISTICS

(TYPICAL) (TYPICAL) (TYPICAL)
600 600 600
Tj = 25°C Tj = 25°C 12V VGE = 0V
15V
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C
FORWARD CURRENT, IF, (AMPERES)

500 500 500

15V Tj = 125°C
12V Tj = -40°C
400 400 400
VGE = 20V VGE = 20V 10V
10V
300 300 300
9V

200 200 200

100 9V 100 100

0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) FORWARD VOLTAGE, VF, (VOLTS)

COLLECTOR-EMITTER COLLECTOR-EMITTER COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
12 12 12
Tj = 25°C Tj = 125°C Tj = -40°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

SATURATION VOLTAGE, VCE(sat), (VOLTS)

SATURATION VOLTAGE, VCE(sat), (VOLTS)

10 10 10
IC = 900A IC = 900A IC = 900A
COLLECTOR-EMITTER

COLLECTOR-EMITTER
COLLECTOR-EMITTER

8 8 8
IC = 600A IC = 600A IC = 600A
6 6 6
IC = 300A IC = 300A IC = 300A
4 4 4

2 2 2

0 0 0
0 5 10 15 20 0 5 10 15 20 0 5 10 15 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS)

5/05 3
 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts

TURN-OFF TIME VS. TURN-ON TIME VS.

TRANSFER CHARACTERISTICS COLLECTOR CURRENT COLLECTOR CURRENT
(TYPICAL) (TYPICAL) (TYPICAL)
1000 104 104
VCE = 5V VCC = 300V
COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C VGE = ±15V

800 Tj = 125°C RG = 5.1Ω

SWITCHING TIME, ton, (µs)

SWITCHING TIME, toff, (µs) Tj = 25°C
Tj = -40°C
Tj = 125°C
600
103 103
400
VCC = 300V
VGE = ±15V
200 RG = 5.1Ω
Tj = 25°C
Tj = 125°C
0 102 102
0 2 4 6 8 10 12 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)

TURN-OFF DELAY TIME VS. TURN-ON DELAY TIME VS. FALL TIME VS.
COLLECTOR CURRENT COLLECTOR CURRENT COLLECTOR CURRENT
(TYPICAL) (TYPICAL) (TYPICAL)
104 104 103
VCC = 300V VCC = 300V
VGE = ±15V VGE = ±15V
RG = 5.1Ω RG = 5.1Ω
SWITCHING TIME, td(off), (µs)

SWITCHING TIME, td(on), (µs)

Tj = 25°C Tj = 25°C
SWITCHING TIME, tf, (µs)

Tj = 125°C Tj = 125°C

103 103 102

VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
102 102 101
0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)

RISE TIME VS. TURN-OFF TIME VS. TURN-ON TIME VS.

COLLECTOR CURRENT GATE RESISTANCE GATE RESISTANCE
(TYPICAL) (TYPICAL) (TYPICAL)
103 104 104
SWITCHING TIME, toff, (µs)

SWITCHING TIME, ton, (µs)

SWITCHING TIME, tr, (µs)

102 103 103

VCC = 300V VCC = 300V VCC = 300V

VGE = ±15V VGE = ±15V VGE = ±15V
RG = 5.1Ω IC = 600A IC = 600A
Tj = 25°C Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C Tj = 125°C
101 102 102
0 100 200 300 400 500 600 700 0 5 10 15 20 25 0 5 10 15 20 25
COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

4 5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts

TURN-OFF DELAY TIME VS. TURN-ON DELAY TIME VS. FALL TIME VS.
GATE RESISTANCE GATE RESISTANCE GATE RESISTANCE
(TYPICAL) (TYPICAL) (TYPICAL)
104 104 104
VCC = 300V VCC = 300V
VGE = ±15V VGE = ±15V
IC = 600A IC = 600A
SWITCHING TIME, td(off), (µs)

SWITCHING TIME, td(on), (µs)

Tj = 25°C Tj = 25°C

SWITCHING TIME, tf, (µs)

Tj = 125°C Tj = 125°C

103 103 103

VCC = 300V
VGE = ±15V
IC = 600A
Tj = 25°C
Tj = 125°C
102 102 102
0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

RISE TIME VS. SWITCHING LOSS (OFF) VS. SWITCHING LOSS (ON) VS.
GATE RESISTANCE COLLECTOR CURRENT COLLECTOR CURRENT
(TYPICAL) (TYPICAL) (TYPICAL)
104 102 102
VCC = 300V
VGE = ±15V
SWITCHING LOSS, Eoff, (mJ/PULSE)

SWITCHING LOSS, Eon, (mJ/PULSE)

IC = 600A
Tj = 25°C
SWITCHING TIME, tr, (µs)

Tj = 125°C

103 101 101

VCC = 300V VCC = 300V

VGE = ±15V VGE = ±15V
RG = 5.1Ω RG = 5.1Ω
Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C
102 100 100
0 5 10 15 20 25 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700
GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS (OFF) VS. SWITCHING LOSS (ON) VS.

GATE RESISTANCE GATE RESISTANCE REVERSE RECOVERY CURRENT
(TYPICAL) (TYPICAL) (TYPICAL)
103 103 103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 300V VCC = 300V VCC = 300V

VGE = ±15V VGE = ±15V VGE = ±15V
SWITCHING LOSS, Eoff, (mJ/PULSE)

SWITCHING LOSS, Eon, (mJ/PULSE)

RG = 5.1Ω RG = 5.1Ω RG = 5.1Ω

Tj = 25°C Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C Tj = 125°C

102 102 102

101 101 101

0 5 10 15 20 25 0 5 10 15 20 25 0 100 200 300 400 500 600
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES)

5/05 5
 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

MG600J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/600 Volts

REVERSE RECOVERY LOSS VS. CAPACITANCE VS.

REVERSE RECOVERY TIME FORWARD CURRENT COLLECTOR-EMITTER VOLTAGE
(TYPICAL ) (TYPICAL) (TYPICAL)
103 101 106

REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE)

VGE = 0V
f = 1MHz
REVERSE RECOVERY TIME, trr, (ns)

CAPACITANCE, Cies, Coes, Cres, (pF)

TC = 25°C
Cies
105

102 100

VCC = 300V VCC = 300V

104
VGE = ±15V VGE = ±15V
RG = 5.1Ω RG = 5.1Ω Coes
Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C
Cres
101 10-1 103
0 100 200 300 400 500 600 0 100 200 300 400 500 600 700 10-2 10-1 100 101 102
EMITTER CURRENT, IE, (AMPERES) EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE BIAS COLLECTOR-EMITTER VOLTAGE VS. GATE-EMITTER VOLTAGE VS.

SAFE OPERATION AREA GATE CHARGE GATE CHARGE
(TYPICAL) (TYPICAL) (TYPICAL)
104 500 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 300A IC = 300A

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, IiC, (AMPERES)

RL = 0.5Ω RL = 0.5Ω
400 Tj = 25C 16 Tj = 25C
103

300 12
200V
300V
102
200 8 100V
VCE = 0V
101
VGE = ±15V 100 4
RG = 5.1Ω
Tj ≤ 125°C
100 0 0
0 100 200 300 400 500 600 700 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 5000 6000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (nC) GATE CHARGE, QG, (nC)

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
100 100
TC = 25°C TC = 25°C
TRANSIENT IMPEDANCE, Rth(j-c)

TRANSIENT IMPEDANCE, Rth(j-c)

10-1 10-1

10-2 10-2

10-3 10-3
SINGLE PULSE SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.045°C/W STANDARD VALUE = Rth(j-c)D = 0.068°C/W
10-4 10-4
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
TIME, (s) TIME, (s)

6 5/05