BL GALAXY ELECTRICAL

SMALL SIGNAL SWITCHING DIODE

FEATURES
Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation These diodes are also available in glass case DO-34. Mini-MELF

1N4148
REVERSE VOLTAGE : 75 V CURRENT: 0.15 A

DO-35(GLASS)

MECHANICAL DATA
Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 am bient temperature unless otherwise specified.

MAXIMUM RATINGS 1N4148

Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resist.load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Junction temperature Storage temperature range

UNITS
V V mA mA mW

VR V RM IAV IFSM Ptot TJ TSTG

MIN -

75.0 100.0 150.0 500.0 500 1) 175 -55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

ELECTRICAL CHARACTERISTICS
Forw ard voltage at IF=10mA Leakage current @ V R=20V @ V R=75V @ V R=20V TJ =150 Capacitance @ V F=V R=0V Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0.1s. Rise time<30ns. fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA V R=6V. RL=100. Thermal resistance junction to ambient Rectification efficiency at 100MHz,V RF=2V

VF IR IR IR CJ Vf r trr RJA v

TYP -

MAX 1.0 25.0 5.0 50.0 4 2.5

UNITS V nA A A pF V

4 3501) -

ns K/W -

0.45

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

www.galaxycn.com

Document Number 0268001

BLGALAXY ELECTRICAL

1.

RATINGS AND CHARACTERISTIC CURVES

FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE

1N4148

FIG.2 -- FORWARD CHARACTERISTICS

1000 900 800

mW

mA
10
3

10 2

Ptot

700 600 500 400 300 200 100 0 0 100 200

IF

10

T J =100 T J =25

10

-1

10 -2

TA

VF

2V

FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION

100

IFSM
10

V=tp/T tp IFSM

T=1/fp

n=0 0.1 0.2 0.5

0.1 10
-5

10

-3

10

-2

10

-1

10S

tp

www.galaxycn.com
Document Number 0268001

BLGALAXY ELECTRICAL

2.

RATINGS AND CHARACTERISTIC CURVES

FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT

1N4148

FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE

1.1

D.U.T. 60 VRF=2V 2nF 5K VO

Ctot(VR) Ctot(OV)

1.0

TJ=25 f=1MHz

0.9

0.8

0.7 0 2 4 6
VR

10V

FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF

FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT

nA
10 4

10

TJ=25 f=1KHz
10 3
10
3

10 2

10

10

10

VR=20V
1
1 0 100 200

10

-2

10

-1

10

IF

10

mA

www.galaxycn.com
Document Number 0268001

BLGALAXY ELECTRICAL

3.