N

2N5484 2N5485 2N5486

G G S

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

Discrete POWER & Signal Technologies

MMBF5484 MMBF5485 MMBF5486

TO-92
D

SOT-23
Mark: 6B / 6M / 6H

N-Channel RF Amplifier
This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Absolute Maximum Ratings*

Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA = 25C unless otherwise noted

Parameter

Value
25 - 25 10 -55 to +150

Units
V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5484 350 2.8 125 357

Max
*MMBF5484 225 1.8 556

Units
mW mW/C C/W C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = - 1.0 A, VDS = 0 VGS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 100C VDS = 15 V, ID = 10 nA 2N5484 2N5485 2N5486 - 25 - 1.0 - 0.2 - 3.0 - 4.0 - 6.0 V nA A V V V

- 0.3 - 0.5 - 2.0

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5484 2N5485 2N5486 1.0 4.0 8.0 5.0 10 20 mA mA mA

SMALL SIGNAL CHARACTERISTICS

gfs Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 VDS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 2N5486 VDS = 15, VGS = 0, f = 1.0 MHz VDS = 15, VGS = 0, f = 1.0 MHz VDS = 15, VGS = 0, f = 1.0 MHz VDS= 15 V, RG = 1.0 k, f = 100 MHz 2N5484 VDS= 15 V, RG = 1.0 k, f = 400 MHz 2N5484 VDS= 15 V , RG = 1.0 k, f = 100 MHz 2N5485 / 2N5486 VDS= 15 V, RG = 1.0 k, f = 400 MHz 2N5485 / 2N5486 3000 3500 4000 6000 7000 8000 100 1000 50 60 75 75 100 2500 3000 3500 5.0 1.0 2.0 3.0 4.0 2.0 4.0 mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos pF pF pF dB dB dB dB

Re(yis)

Input Conductance

gos

Output Conductance

Re(yos)

Output Conductance

Re(yfs)

Forward Transconductance

Ciss Crss Coss NF

Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier
(continued)

Typical Characteristics
Transfer Characteristics
20 ID - DRAIN CURRENT (mA) V DS = 15V
O O

Channel Resistance vs Temperature

1000 r DS - DRAIN ON RESISTANCE ( ) 500 300 200 100

V GS(OFF) = -4.5V TA = -55 C T A = +25 C T A = +125 OC

16

V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V

12

TA = -55 C T A = +25 C T A = +125 OC

O

50 30 20 10

4 -2.5 V 0 0 -1 -2 -3 -4 V - GATE-SOURCE VOLTAGE(V) GS -5

V DS = 100mV V GS = 0 V
-50 0 50 100 T A - AMBIENT TEMPERATURE ( C) 150

gfs -- TRANSCONDUCTANCE (mmhos)

Transconductance Characteristics
7 6 5 4 3 2 1 0 0 -2.5 V -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5
DS

Common Drain-Source Characteristics

I D -- DRAIN CURRENT (mA) = 15V 5 T A = +25 OC 4 TYP V 3
V

TA = -55 C T A = +25 C T A = +125 OC

O

-0.
0V

5V

= -5.0V GS(OFF)
=
GS

V -1.0 V -1.5 -2.0V

TA = -55 C T A = +25 OC T A = +125 OC V GS(OFF) = -4.5V

-2.5V
-3.0V -3.5V

2 1

-4.0V 0 0 0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V) 1

gos -- OUTPUT CONDUCTANCE (u mhos)

T A = +25 OC f = 1.0 kHz

20 10 5

GS(OFF)

= -5.5V

5.0V 10V 15V 20V

gfs, I DSS @ V DS= 15 V, V r DS @ V DS = 100mV, V

= GS

0 PULSE =0 GS

100 50 30 20 10 5

V = 5v
DG

10 20

15

5 10 15 20 = -3.5V

1 0.5

V V
GS(OFF)

GS(OFF)

= -1.5V
5 10

20 10 -1

VGS(OFF) @ V GS = 15V, I = D 1nA -2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V)

GS

3 2 1 - 10

0.1 0.01 0.02

0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA)

gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS

r DS -- DRAIN "ON" RESISTANCE ( )

Output Conductance vs Drain Current

Transconductance Parameter Interactions

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier
(continued)

Typical Characteristics

(continued)

gfs -- TRANSCONDUCTANCE (mmhos)

10

T A = +25 C T A = +125 OC 1 0.5 V GS GS(OFF) = - 5V TA = -55 C T A = +25 C T A = +125 OC V DG = 15V 0.1 0.01 0.02 f = 1.0 kHz 0.05 0.1 0.2 0.5 1 2 I - DRAIN CURRENT (mA)
D
O O

e n- NOISE VOLTAGE ( nV/

V GS GS(OFF) = - 1.5V O TA = -55 C 5

Hz )

Transconductance vs Drain Current

Noise Voltage vs Frequency

V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz

10 5 I D = 3 mA

I D = 0.5 mA

10

1 0.01 0.03

0.1

0.3 1 3 10 f -- FREQUENCY (kHz)

30

100

Capacitance vs Voltage
10 C is ( C rs ) -- CAPACITANCE (pF) f = 0.1 - 1.0 MHz NF -- NOISE FIGURE (dB) 5 C isC ( V (DS V = 15 = V) 15 V) 1 C rs ( V = 0 V) 4 5 I

Noise Figure Frequency

V DS = 15V
D

= 5.0 mA

R g = 1.0 k O T A = +25 C

DS

-5 -10 -15 VGS-- GATE-SOURCE VOLTAGE(V)

-20

0 10

20

30

50 100 200 300 f -- FREQUENCY (MHz)

500

1000

Power Dissipation vs Ambient Temperature

PD - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150

SOT-23

TO-92

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier
(continued)

Common Source Characteristics

Y iss -- INPUT ADMITTANCE (mmhos)

10 5

-- OUTPUT CONDUCTANCE (mmhos)

Input Admittance
V DS = 15V V GS = 0 (CS)

Output Admittance
1

b OSS (x 10) g
OSS

b iss g iss

V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000

100

200 300 500 f -- FREQUENCY (MHz)

700

1000

OSS

Forward Transadmittance
Yfss -- FORWARD TRANSFER (mmhos) Y rss-- REVERSE TRANSFER (mmhos) 10 5 10 5

Reverse Transadmittance

+g

fss

-b fss
1

- b rss 1 -g V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 ( X 0.1)

rss

V DS = 15V V GS = 0 (CS)
100 200 300 500 f -- FREQUENCY (MHz) 700 1000

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier
(continued)

Common Gate Characteristics

Y ogs-- OUTPUT CONDUCTANCE (mmhos)

Input Admittance
Y igs -- INPUT ADMITTANCE (mmhos) V DS = 15V V GS = 0 (CG)

Output Admittance
1

b OgS (x 10) g
Ogs

10 5

g igs

b igs

V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000

1 100

200 300 500 f -- FREQUENCY (MHz)

700

1000

Yfgs -- FORWARD TRANSFER (mmhos)

Forward Transadmittance
Y rgs-- REVERSE TRANSFER (mmhos) 10 5 +g fgs 1

Reverse Transadmittance
V DS = 15V V GS = 0 (CG) g
rgs

-b fgs 1

- b rgs

V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000

100

200 300 500 f -- FREQUENCY (MHz)

700

1000

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