ELECTRONIC

13003
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 600 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 1.25 Total Power Dissipattion PC 20 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 600 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=550V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=100mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=0.5A,Ib=0.1A Base-Emitter Saturation Voltage VBE(sat) Ic=0.5A,Ib=0.1A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 0.8 1.2 3 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jan-08

ELECTRONIC

13003
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jan-08

ELECTRONIC

13003
HIGH VOLTAGE POWER TRANSISTOR

MYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jan-08

ELECTRONIC

13003A
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 600 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 1.5 Total Power Dissipattion PC 25 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 600 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=550V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=200mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=0.75A,Ib=0.25A Base-Emitter Saturation Voltage VBE(sat) Ic=0.75A,Ib=0.25A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 0.7 1.2 3 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jan-08

ELECTRONIC

13003A
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jan-08

ELECTRONIC

13003A
HIGH VOLTAGE POWER TRANSISTOR

SMYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jan-08

ELECTRONIC

13003B
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 600 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 1.75 Total Power Dissipattion PC 30 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 600 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=550V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=200mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=1.0A,Ib=0.5A Base-Emitter Saturation Voltage VBE(sat) Ic=1.0A,Ib=0.5A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 0.7 1.2 3 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jan-08

ELECTRONIC

13003B
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jan-08

ELECTRONIC

13003B
HIGH VOLTAGE POWER TRANSISTOR

SMYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jan-08

ELECTRONIC

13003C
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 700 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 2.0 Total Power Dissipattion PC 35 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 700 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=650V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=200mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=1.5A,Ib=0.5A Base-Emitter Saturation Voltage VBE(sat) Ic=1.5A,Ib=0.5A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 0.8 1.2 3 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jan-08

ELECTRONIC

13003C
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jan-08

ELECTRONIC

13003C
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jan-08

ELECTRONIC

13003D
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 700 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 2.25 Total Power Dissipattion PC 40 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 700 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=650V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=500mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=1.5A,Ib=0.5A Base-Emitter Saturation Voltage VBE(sat) Ic=1.5A,Ib=0.5A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 1.0 1.2 4 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jul-09

ELECTRONIC

13003D
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jul-09

ELECTRONIC

13003D
HIGH VOLTAGE POWER TRANSISTOR

SMYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jul-09

ELECTRONIC

13003E
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 700 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 2.5 Total Power Dissipattion PC 45 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 700 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=650V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=500mA 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=1.5A,Ib=0.5A Base-Emitter Saturation Voltage VBE(sat) Ic=1.5A,Ib=0.5A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 1.0 1.2 4 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jul-09

ELECTRONIC

13003E
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jul-09

ELECTRONIC

13003E
HIGH VOLTAGE POWER TRANSISTOR

SMYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jul-09

ELECTRONIC

13003F
HIGH VOLTAGE POWER TRANSISTOR

FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer

LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Collector-Base Voltage VCBO 700 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 9 Collector Current IC 3.0 Total Power Dissipattion PC 50 Storage Temperature -65150 Tstg Junction Temperature Tj 150

Unit V V V A W

ELECTRICAL CHARACTERISTICS (Tj=25 Unless Otherwise Stated) Parameter Symbol Test conditions Min Collector-Base Breakdown Voltage BVCBO Ic=0.5mA,Ie=0 700 Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,Ib=0 400 Emitter-Base Breakdown Voltage BVEBO Ie=1mA,Ic=0 9 Collector-Base Cutoff Current ICBO Vcb=650V, Ie=0 Collector-Emitter Cutoff Current ICEO Vce=400V, Ib=0 Emitter-Collector Cutoff Current IEBO Veb=9V, Ic=0 DC Current Gain hFE(1) Vce=5V,Ic=1A 10 DC Current Gain hFE(2) Vce=5V,Ic=1mA 9 Collector-Emitter Saturation Voltage VCE(sat) Ic=2A,Ib=0.5A Base-Emitter Saturation Voltage VBE(sat) Ic=2A,Ib=0.5A Storage Time Ts VCC=250V IC=5IB Falling Time Tf IB1=- IB2=0.2A

Max

10 20 20 40 1.2 1.5 4 0.8

Unit V V V A A A

V V uS

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P1/3 REV:A Jul-09

ELECTRONIC

13003F
HIGH VOLTAGE POWER TRANSISTOR

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P2/3 REV:A Jul-09

ELECTRONIC

13003F
HIGH VOLTAGE POWER TRANSISTOR

SMYBOL A B C D F G H J K L N P Q R S Z

Min 9.0 7.05 2.4 1.4 3.15

Nom 10 8.0 2.5 1.5 3.2 2.3 13

Max 11 8.05 2.8 1.6 3.25

0.48

0.50

0.55

0.65

0.75 4.6

0.85

3.8 0.9 13.5

3.9 1.0 14.0

4.0 1.1 14.5

MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu Road.Kowloon Bay.Kowloon. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5

P3/3 REV:A Jul-09