Phosphorescence

(electro Phosphorescence)
• It will be improve internal quantum
efficiency from 25% to 100%

Electron and electron hole recombine in excition state

Mechanism
• A. energy-transfer
• B. carrier trapping
It usually energy-transfer and carrier
trapping occur at the same time. Depends
on the situation. A or B will be the major
Mechanism. If higher concentration of the
dopant material or lower voltage density, B
is the major mechanism.
Host emitter material
• The band gap of host emitter must bigger
than dopants, the energy will transfer from
host emitter to dopant. The dopant will be
excited.
For chemical structure of host
emitter
• 1. carbazole
• 2. 1,8-nathalimide and 1,3,5-triazine
• 3. BAlq
• 4. tetra(aryl)silane-UGHx
carbazole
• CBP,TCTA,mCP,CDBP,DCB
1,8-nathalimide (niBr), In 2002,Adachi
1,3,5-triazine (TRZ), In 2004,Adachi
BAlq, Pioneeer
UGHx
• Because UGHx’s band gap too big, it has to add
one layer of mCP. The layer can help hole
injection and against electron transfer from EML
to HTL, commonly use UGH2