2SK3728-01MR

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F 200305

Super FAP-G Series

Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 900 VDSX *5 900 ID 2.2 ID(puls] 8.8 VGS 30 IAR *2 2.2 EAS *1 127.2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.16 Tc=25C 26 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V V A A V A mJ kV/s kV/s W C C Vrms

Equivalent circuit schematic

Drain(D)

Gate(G) Source(S)

*1 L=48.2mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS< 900V *5 VGS=-30V *6 f=60Hz, t=6-sec. = -ID, -di/dt=50A/s, Vcc < =

Electrical characteristics (Tc =25C unless otherwise specified)

Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C Tch=125C VDS=720V VGS=0V VGS=30V VDS=0V ID=1.1A VGS=10V ID=1.1A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.1A VGS=10V RGS=10 VCC =450V ID=2.2A VGS=10V L=48.2mH Tch=25C IF=2.2A VGS=0V Tch=25C IF=2.2A VGS=0V -di/dt=100A/s Tch=25C

Min.
900 3.0

Typ.

Max.
5.0 25 250 100 8.00 375 55 3.3 26 9 39 42 12.5 5.1 3.3 1.50

Units
V V A nA S pF

1.1

6.15 2.2 250 36 2.2 17 6 26 28 8.3 3.4 2.2 0.90 0.8 2.2

ns

nC

2.2

A V s C

Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient

Min.

Typ.

Max.
4.808 58.0

Units
C/W C/W

2SK3728-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
2.5 25

FUJI POWER MOSFET

30

Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C

20V 10V 7.0V 6.5V

2.0 20

6.0V

PD [W]

ID [A]

15

1.5

10

1.0

VGS=5.5V 5 0.5

0 0 25 50 75 100 125 150

0.0 0 5 10 15 20

Tc [C]

VDS [V]

10

Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C

10

Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C

ID[A]

gfs [S]
0.1

10

0.1

10

VGS[V]

ID [A]

8.5

Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C

VGS=5.5V 6.0V 6.5V

25.0 22.5 20.0 17.5

Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.1A,VGS=10V

8.0

7.0V 10V

RDS(on) [ ]

RDS(on) [ ]

7.5

20V

15.0 12.5 10.0 7.5 5.0 max.

7.0

6.5

typ.

6.0 2.5 5.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150

ID [A]

Tch [C]

2SK3728-01MR

FUJI POWER MOSFET

7.0 6.5 6.0 5.5 5.0

Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A

14

Typical Gate Charge Characteristics VGS=f(Qg):ID=2.2A,Tch=25C

Vcc= 180V 450V 720V

12

max.

10

VGS(th) [V]

4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 2 4 min.

VGS [V]

Tch [C]

Qg [nC]

Typical Capacitance C=f(VDS):VGS=0V,f=1MHz

10
0

10

Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C

Ciss

10

-1

C [nF]

Coss 10
-2

Crss 10
-3

IF [A]

0.1

10

10

10

0.00

0.25

0.50

0.75

1.00

1.25

1.50

VDS [V]

VSD [V]

10

Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10

300

Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V

IAS=1.0A

250 tf 10
2

200 td(off)

IAS=1.4A

EAS [mJ]
0

t [ns]

150 IAS=2.2A

td(on) 10
1

100 tr 50

10

10

-1

0 0 25 50 75 100 125 150

10

ID [A]

starting Tch [C]

2SK3728-01MR

FUJI POWER MOSFET

10

Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V

Avalanche Current I AV [A]

10

Single Pulse

10

10

-1

10 -8 10

-2

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

tAV [sec]

10

Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0

10

Zth(ch-c) [C/W]

10

10

-1

10

-2

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

t [sec]

http://www.fujielectric.co.jp/denshi/scd/