H VI C IN T (VI H THNG)

MICROSYSTEMS
MICRO-ELECTRO-MECHANICAL SYSTEMS MICROMACHINING

VI H THNG

MEMS
Mt th gii rng m v quyn r (An fascinating and wide world)

VI H THNG

tng sn phm cho mt ng dng c th Thng phm ha

M hnh ha

Tnh ton m phng (tin on ng x v c trng) Thc hin ch to

Hon chnh thit k

Th nghim & nh gi

Thit k v xy dng qui trnh ch to

Tin trnh ca linh kin MEMS t tng n hin thc

3

III. Thit k trong MEMS

1. M u/ Introduction 2. Cc h qu khi thu nh kch thc /

Scaling issues for MEMS

3. M hnh ha v m phng/
Modeling and Simulation

4. Thit k qui trnh ch to/

Process integration

5. Kt lun/Conclusions
4

1. M u

Vai tr v ngha ca thit k

Phn loi linh kin theo mc tiu thit k
) Th hin kha cnh nh hng cng ngh ) Th hin kha cnh lm cng c nghin cu ) Th hin kha cnh nh hng th trng bng thng phm

ngha
) p ng nhu cu v nh gi tim nng ca th trng ) Tc ng ca sn phm c thit k vi qu trnh pht trin ) Xem xt tnh cnh tranh ca sn phm c thit k tm ra phng n ti u c v kha cnh hin thc ha v c tnh ni tri nht ) Sn phm c kh nng ph hp vi iu kin cng ngh ) Kh nng sn xut hng lot vi s lng ln v gi thnh h
5

1. M u

ng lc tin trnh thit k

nh gi tnh cnh tranh Nhu cu th trng nh gi hot ng M hnh ha v phn tch
6

Kh nng ch to

tng sng to

Kh nng cng ngh Thit k sn phm

1. M u

Cc cp xy dng m hnh
h thng
X y

Tnh lp li

K s thit k

Linh kin d ng m Ki hn M phng m h n h Qui trnh Qui trnh qui trnh ch to v thit k MASK

H thng tnh cht ng hc ca h, c m t bi cc phng trnh vi phn mt bin (ordinary differential equations ODE) thng qua m hnh khi tng ng (lumped model).

M phng Tm ng x ca linh kin trong iu kin thc, tc l thc hin gii cc phng trnh vi phn (partial differential equations) tm nghim chnh xc (gii tch) hoc gn ng nht (cc pp gii s nh sai phn hu hn/finite differential method FDM, phn t hu hn /finite element method - FEM). 7

1. M u

Cc cp xy dng m hnh

1. M u

Cc cp xy dng m hnh
V d thit k cm bin gia tc p in tr 3 bc t do Thit k m hnh tng th ca h ) L 2 Newton: trong h C, gia tc sinh ra khi c ngoi lc tc ng,
F = ma cu trc mm do (rm beam) c phn t to dao ng (khi gia trng - m) to ra ng sut trn beam nhn bit bng s thay i in tr ca p in tr M hnh khi tng ng (lumped-model) M t ton hc ca m hnh (bi ton mt chiu)

d 2x k b dx 1 x = + F 2 dt m m dt m
9

1. M u

Cc cp xy dng m hnh
V d thit k cm bin gia tc p in tr 3 bc t do Thit k m hnh linh kin
Z=3 az ay Y=2 ax Khi gia trng Thanh dm nhy c Thanh dm treo Khung ngoi

X=1

10

1. M u

Cc cp xy dng m hnh
V d thit k cm bin gia tc p in tr 3 bc t do M phng hot ng ca linh kin
Gii phng trnh:

2 y 4 y m 2 + EI 4 = F dt dx
iu kin bin: y(0) = 0; y(0) = 0; y(L) = 0; y(L) = 0

11

1. M u

Cc cp xy dng m hnh
V d thit k cm bin gia tc p in tr 3 bc t do Thit k MASK
MASK 4 MASK 1

MASK 5 MASK 2

MASK 3

MASK 6
12

1. M u

Cc cp xy dng m hnh
V d thit k cm bin gia tc p in tr 3 bc t do Thit k qui trnh ch to
1 10

MASK 1
2 9

MASK 6
3 8

MASK 2
4 7

MASK 5

MASK 3
5 Si Buried SiO2 SiO2 6 Al

MASK 4

Boron doping layer

13

III. Thit k trong MEMS

1. M u/ Introduction 2. Cc h qu khi thu nh kch thc /

Scaling issues for MEMS design

3. M hnh ha v m phng/
Modelling and Simulation

4. Thit k qui trnh ch to/

Process integration

5. Kt lun/Conclusions
14

2. Thu nh kch thc trong thit k

Kch thc ca h vt l

15

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v hnh hc
H s thu nh di hnh hc: c s nh gi nh hng ca hiu ng thu nh kch thc vi h vi m Xt di X0 c thu nh xung XS theo t l (h s thu nh) S (0 < S 1), tc l: XS = S.X0 ) Din tch: ) Th tch: AS = XS.YS = S2.X0.Y0 = S2.A0 VS = XS.YS.ZS = S3.X0.Y0.Z0 = S3.V0

H s thu nh di = 10-3 th tch v khi lng gim 10-9 ln

16

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v hnh hc
Xt t s:

AS 1 A0 = VS S V0
Khi kch thc b thu nh A/S tng hiu ng vt l lin quan t s A/S s khc vi h v m.
17

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v tnh cht c hc
H s n hi - cng (stiffness) Xt bin dng ca l xo (phn t n hi) di tc dng ca ngoi lc F, c:

F = k = k (u j u i )
Tu y n

Theo L 3 Newton c cn bng lc ti 2 v tr ca chuyn di nt (node) i v j, tc l:

f i = F = k (u j u i ) = ku i ku j f j = F = k (u j u i ) = ku i + ku j k ui f i Hay: k k k u = f ku = F j j

F k = u

tn h

Phi tuyn

18

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v tnh cht c hc
H s n hi - cng (stiffness) Trng hp beam b un cong (bending): EI Ewt 3 k 3 S L L ) cng beam gim tng ng vi h s thu nh kch thc Trng hp beam b xon (torsion) : T = k . (k h s n hi xon, l gc xon ca dm) z t w

L F

dy

o
y

KJ d 4 ( Sd 0 ) 4 k= = S3 L L L T
) Beam chu c lc xon ln hn nhiu ln so vi h v m
19

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v tnh cht c hc
Tn s dao ng ring i vi h dao ng c, c:

f =

1 2

k M

k M

S 1 = S3 S

) S cng nh (gim kch thc nhiu) f cng ln ) Cu trc c ca linh kin MEMS chu ng tc ng c hc ln hn nhiu ln so vi h v m
20

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v cc qu trnh nhit
Truyn nhit i lu nhit
TW

Bc x nhit

q = KA S
2

T = KA T x

q = hA(Tw T ) S2

q = A(T14 T24 ) AT 4 S 2
21

Kch thc thu nh cc hin tng nhit tng mnh

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v cht lu
C hc cht lu c c trng bi 3 hng s: s Reynold, Knudsen v Webe Hng s Reynold (Re): ch s ch dng chy theo lp (laminar) hoc cun xoy (turbulent ) xc nh bng t s ca lc qun tnh v nht
Laminar (Re < 2000) Vng chuyn tip (2000<Re < 4000) Turbulent (Re > 4000)

nht chim u th

Ph thuc nhm b mt dng chy C: Re = vL S

Lc qun tnh chim u th

Kch thc thu nh Re trong linh kin MEMS nht chim u22 th

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v cht lu
Hng s Knudsen (Kn): thc o dng chy cht kh xc nh bng t s ca qung ng t do TB phn t kh () v di c trng (L) Kn < 0,01: lin tc 0,01 < Kn < 0,1: trt Kn = L 0,1 < Kn < 10: chuyn tip Kn > 10: Phn t t do ) Linh kin MEMS: ~ 0,1 v L ~ 2m Kn ~ 0,05: dng kh trt trong cu trc Hng s Webe (We): ch s v s tng nh hng ca sc cng b mt khi kch thc ca h gim, xc nh bng t s ca lc qun tnh v sc cng b mt v 2 L We = S

23

2. Cc h qu khi thu nh kch thc

Kch thc ca h vt l
Thu nh kch thc v phn t mch in
in tr T in Cun cm

L 1 R= A S
Kch thc thu nh R Nng lng in trng Nng lng t trng

C=

A S g

N 2 A L= S l

Kch thc thu nh C v L 1 1 wE = 0 E 2 2 Kch thc thu nh wE 2 S

1 B 0 = wH S 2 0
2

Kch thc thu nh wE

24

2. Cc h qu khi thu nh kch thc

Tnh ton
n v:
i lng di Lc Thi gian Khi lng p sut (S) Khi lng ring in tch Cng dng Th MKS M N s Kg N/M2 Kg/M3 C A V H s nhn 106 106 1 1 10-6 10-18 1012 1012 1 MKS M N s Kg N/M2 Kg/M3 pC pA V

sai s tnh ton nh gii hn chnh xc ca cc dy s kt qu (truncation error) v gii hn chnh xc ca php tnh (round-off error) khi gii phng trnh
25

2. Cc h qu khi thu nh kch thc

Cc hiu ng vt l c bit
Tp nhiu Brown (dao ng nhit): sinh ra trong h c-in khi cc nguyn t ca vt liu dao ng gy ra suy hao khi h hot ng Hiu ng Paschen: Do khe (khong cch) gia cc chi tit trong cu trc nh xut hin th nh thng (breakdown voltage) lm hng linh kin Hiu ng in t chui ngm (electron tunneling current): L hiu ng ca vt l lng t khi in t c th chui ngm khe nng lng do tnh bt nh ca sng vt cht.

26

III. Thit k trong MEMS

1. M u/ Introduction 2. Cc h qu khi thu nh kch thc /

Scaling issues for MEMS

3. M hnh ha v m phng/
Modeling and Simulation

4. Thit k qui trnh ch to/

Process integration

5. Kt lun/Conclusions
27

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Lagrange
) S dng h cc phng trnh vi phn Lagrange trong h ta chung (generalized coordinates) qk (k = 1,2,n) m t tng thi ca h
c Ta chung (qi) ng nng (T) Th nng (U) Hm suy hao Raleigh (D) Cng (W) x in

Q
1 &2 LQ 2
1 Q2 2 C

V hoc
1 1 &2 CV 2 = C 2 2 2

1 2 & Cx 2 F.x

1 &2 1 &2 M Mx 2 2 1 2 1 Kx K 2 2 2

1 &2 C 2

1 &2 RQ 2

T.

V.Q

&2 1 2 R i.

1 2 L

) S lng cc ta c lp m t h ng hc gi l bc t do ca 28 h (degree of freedom - DOF)

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Lagrange
Phng trnh Lagrange tng qut T nh lut bo ton nng lng, c: d(T+U) = 0
&i , U l hm ca qi, Trong h ta chung: T l hm ca qi v vn tc q
d T T U d (T + U ) = + dqi & & qi qi i =1 dt qi
N

i vi h bo ton khng thuc trng lc th:

d T T U + =0 &i & dt q q q i i d T T U Phng trnh Lagrange: + = Qi & & dt qi qi qi

Khi h thc hin cng bng lc bnh thng Qi, c: d (T + U ) = dW = Qi dqi

i =1

29

3. M hnh ha v m phng

Xy dng m hnh tng quat (concept to first design)

Php bin i Lagrange
Lc ma st (khng th- nonpotential force)

& + Lc ma st trong h ta Descartes: F = Cx

1 n n &r q &s Hm suy hao: D = Crs q 2 r =1 s =1
Lc ma st trong h ta chung: Qi = ) Phng trnh Lagrange c lc khng th:
d T T U D + + = Qi &i qi q &i qi dt q
30

D qi

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Lagrange
iu kin rng buc (constrain equation) + Trng hp s ta n v s bc t do N khng nh nhau, tc l: n > N iu kin rng buc: gl (q1, q2, , qN) = 0 (l = 1, 2,, M) + iu kin c h phng trnh gii c xc nh mt h: n M = N Suy hao do lc ging Q
con i

=
l =1

g l qi

) Phng trnh Lagrange i vi cc lc khng thuc trng th

M g l d T T U D con = Q + Q = Q + + + i i i q q & & dt q q qi l =1 i i i i

31

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Lagrange
V d: xy dng m hnh ca cm bin gia tc H dao ng c, 1-DOF, ngoi lc F c th l lc qun tnh, lc tnh in hoc lc in t
1 &2 Mx 2 1 + Th nng ca h: U = Kx 2 2 1 &2 + Suy gim NL ca h: D = C x 2

+ ng nng ca h:

T=

+ Cng h thc hin:

W = F .x
32

Phng trnh vi phn dao ng bc 2: M& & + Cx & + Kx F = 0 x

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Linh kin MEMS trong th gii thc ) C kch thc 3 chiu ) C nguyn l hot ng tun theo cc nh lut Vt l M hnh kt khi cho thit k - s dng l thuyt mch : ) n gin ha mt h phc tp (c, nhit, ha) bng cc phn t mch in ) M hnh ha tng tc gia cc dng nng lng (energy domain) mt cch hiu qu ) M hnh ha tnh cht Tnh v ng ca h m khng cn phi xy dng v th
33

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Phn t kt khi ) Vt th n l c th trao i NL vi cc vt th khc ) Tc trao i nng lng: nng lng/thi gian PAB = r12 PBA = r22 (r1 v r2 l cc s thc, PAB > 0 v PBA > 0) ) Mng nng lng gia A v B P = PAB - PBA = r12 - r22 = (r1+r2)(r1-r2) NL gia A v B lun c vit di dng tch ca 2 s thc, Bin NL lin hp ) Cp i lng m tch ca chng bng tch tc trao i NL mng gia 2 phn t 34

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Nng lng (generalized power variable) ) Tc ng (effort): e(t) ) Bin i (flow): f(t)
t

Bin lin hp: e(t).f(t) = NL

Xung lng v chuyn v (momentum and displacement) ) Xung lng ) Chuyn v

p (t ) = e(t )dt q (t ) = f (t )dt

t0 t t0

e(t).q(t) = NL

hay f(t).p(t) = NL
35

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
NL lin hp tng ng cc dng NL c th khc nhau Tc ng H c hc Mch in Cht lu Lc (F) Th (V) p sut (P) Bin i Vn tc (v) Dng (I) Dng chy khi (Q) p lc () Xung lc Xung lng (p) Dch chuyn V tr (x) in tch (q) Th tch (V)
36

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Phn t mt cng (1-port element) Cng (port): cp li vo/ra ca mt phn t mch in cho php dng i vo v i ra. 2 bin cho mi port: Ngang qua (across) in C Cht lu Tc ng = th Tc ng = lc Tc ng = p sut Xuyn qua (through) Bin i = dng Bin i = vn tc Bin i = dng chy khi
37

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Phn t mt cng (1-port element) Ngun (source): phn t kch hot cung cp NL cho cc phn t khc khi e(t).f(t) <0

Ngun tng tc

Ngun bin i

Biu din cc i lng c hoc cht lu thnh phn t mch mang cc c trng in (tiu hao NL - tr, th nng - t, ng nng cun cm)

in tr

T in

Cun cm

38

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
M hnh in tr (generalized resistor) Th hin mi quan h tuyn tnh gia tc ng v bin i:
f (I, v hoc Q)

e = Rf
) e.f > 0 gc I v III NL s b tiu th (disipated/absorbed)

e (V, F hoc P)

Trong chuyn ng (dao ng) c, m hnh in tr ng vai tr l lm b gim chn (damper) dp tt dao ng (do ma st, nht cht lu).
39

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
M hnh T (generalized capacitor) Th hin mi quan h gia tc ng v dch chuyn: e = (q) ) Khi t c tng tc 0 c chuyn v 0 t tch tr NL ) NL lu tr: Wq = edq = ( q )dq
1

e (V, F hoc P)

q (q, x hoc V)

q1

q1

) NL tng ng (co-energy):
W * (e) = e.q W ( q ) = qde
0 e1

40

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
M hnh T p dng cho t in phng QC = CV
e (V) Q = CV

A C= g

q (Q)

Q2 CV 2 * W (Q) = W (Q) = = W (Q ) 2C 2 ) Q ca t l dng in

M hnh T p dng cho dao ng c ) Theo L Hook: F = kx x 1 ) NL lu tr trong l xo: W ( x1 ) = F ( x ) dx = kx1 2 0 ) x ca l xo l dng c
1

41

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
M hnh cun cm (generalized inductor) Th hin mi quan h gia bin i v xung lng

f = (p)

) NL lu tr:

W ( p1 ) = ( p ) dp
0

p1

) NL tng ng (co-energy): W * ( p ) = f . p W ( p ) ) Trong C c m hnh cun cm ng vai tr l khi lng (gia trng) do chuyn ng qun tnh 2 V d: p

p = mv ( p ) =

p1 W ( p1 ) = 2m 1 W * ( p1 ) = mv12 2

42

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

M hnh kt khi (lumped-model)
Gn kt cc phn t (circuit connection) S mch in ) Mc ni tip (serires): p dng cho trng hp cng chia s bin dng chy (flow) v dch chuyn ) Mc song song (paralell): p dng cho trng hp cng chia s bin tc ng (effort) nh lut Kirschhoff ) p dng cho dng ti nt i:

I =0 ) p dng vi th ca mch kn: V = 0

i i

-F + ek + em + eb = 0

43

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
Phng php ton hc c dng ph bin phn tch hoc m hnh ha h ng hc. Php bin i t vng ph thuc thi gian (time-domain) trong thng tin a vo (inputs) v ly ra (outputs) l hm ph thuc thi gian sang vng tn s (frequency-domain) ngha l cc thng tin ni trn tr thnh hm ca tn s gc phc (hay rad/s). nh ngha: bin i Lapalce ca hm ph thuc thi gian, f(t), l hm F(s), c dng: (s l s phc) X ( s) = L {x} = x(t )e st dt
s

Bin i php vi phn (hoc tch phn) thnh php nhn (chia) vi s phng trnh a thc d dng gii s dng php bin i Laplace 44 nghch chuyn ngc v qu trnh ph thuc thi gian.

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
Cc tnh cht Tuyn tnh (linear) (t) l t hp tuyn tnh ca x(t) v y(t): (t) = .x(t) + y(t) Bin i Laplace ca (t): W(s) = .X(s) + Y(s) Vi phn (differentiation) & (t ) x Bin i Laplace ca x & (t ) L s {x &} = sX ( s) x(0) Hm n v bc thang (Heaviside unit-step function ) u

1 s Bin i Laplace ca u(t): 1 t.u (t ) L s {u} = 2 s u (t ) L s {u} =

= 0, t < 0 u (t ) = = 1, t 0

t 45

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
Hm truyn (transfer function) Biu din ton hc (php nh x tuyn tnh ca bin i Laplace) th hin mi quan h gia li vo v li ra (ph thuc thi gian) di dng hm tn s: Y(s) = H(s)X(s) H(s): hm ph thuc tn s H lin tc: x(t): hm li vo, y(t): hm li ra

H ( s) =
H ri rc: H ( z ) =

Y ( s) L s { y (t )} = X ( s) L s {x(t )}
46

Y ( z) X ( z)

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh Khi gia trng di chuyn (moving mass)

&(t ) L 2 Newton: f (t ) = ma (t ) = m& x

Bin i Laplace ca f(t) f (t ) F ( s) = mL s {& &} x p dng nh l vi phn, c: F ( s) = m[ sL s {x &} x & (0)] =

& (0)} = = m{s[ sX ( s) x(0)] x & (0)] = m[ s 2 X ( s) sx(0) x

x(0): v tr ban u v

& ( 0) = x &0 = v0 l vn tc ban u x

47

Gii phtr xc nh X(s)

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh Khi gia trng di chuyn (moving mass) Nu f(t) = 0, c: X ( s ) =
& ( 0 ) x ( 0) v ( 0) x ( 0) x + 2 = + 2 s s s s

p dng nh l unit step function v tr khi gia trng x(t):

x(t) = x(0).u(t) + v(0).t.u(t)

) v tr ban u x(0) = x0, v v(0) = 0 x(t) = x0 vi t 0 vt ng yn ) v(0) kt hp vi thi gian vt C khng ngng vi vn tc ban u ) phtr vi phn m t C ca vt phtr i s tuyn tnh
48

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh B dao ng gia trng-l xo (mass-spring)

&(t ) ) L 2 Newton cho m: f m (t ) = ma (t ) = m& x

) L Hook cho k:

f k (t ) = kx(t )

) L 3 Newton: f m (t ) + f k (t ) = 0 m& &(t ) + kx(t ) = 0 x Bin i Laplace 0 = L s {m& & + kx} = x

&} + kL s {x} = = mL s {& x &} x & (0)] + kX ( s) = = m[ sL s {x & (0)} + kX ( s) = = m{s[ sX ( s) x(0)] x & (0) + kX ( s) = ms X ( s) msx(0) mx
2

49

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh B dao ng gia trng-l xo (mass-spring) x(0): v tr ban u v X (s) =

sx0 + v0 r r = + s 2 + k / m s + j 0 s j 0 2 2 2 x0 j v0 + 0 x0 j r = Rr e Rr = 0 = k / m r = + 2 2v00 20
2 2 2 v0 x0 + 0

& ( 0) = x &0 = v0 l vn tc ban u x

v0 0 x0

r = tan 1

j t j t j t v tr khi gia trng x(t): x (t ) = re 0 + r e 0 = 2re{re 0 } =

) v(0) = 0 x(t) = x0cos(0t)

1 v0 cos 0t tan x 0 0

) x(0) = 0 x(t) = (x0/0)sin(0t) v v(t) = v0cos(0t)

50

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh B dao ng l xo-gia trng-gim chn (mass-spring-damper) Bin trng thi: ) x1: v tr ) x2 = dx1/dt: vn tc ) dx2/dt: gia tc
u ra (output) = dch chuyn

&1 x2 = x
&2 = x

u vo (input) = tc ng

k b 1 x1 x2 + F m m m

(L 2 Newton cho h)
51

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh

1 x 0 b 1 + 1 F x2 m m x1 1 0 x1 0 x = 0 1 x + 0 F 2 2 & = Ax + BU (1) Phng trnh trng thi tng qut x y = Cx + DU (2) 0 &1 x = k x &2 m
- x: bin trng thi (ma trn ct) th hin v tr, vn tc, - U: thng tin u vo (ma trn ct) th hin lc - y: thng tin u ra (ma trn ct) th hin gia tc, - A, B, C, D cc i lng thi gian, c ngha lin kt c h.

52

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh Bin i Laplace vi phng trnh (1): sX ( s ) x (0) = AX ( s ) + BU ( s ) Bin i Laplace th hin p ng ca h:

X ( s ) = ( sI A) 1 [x(0) + BU ( s )]
p ng iu kin ban u (cha c li vo): X zir ( s ) = ( sI A) 1 x (0) p ng tc ng li vo: iu kin c nghim: det( sI A) 0 Bi ton tr ring: tn ti gi tr s sao cho: det( sI A) = 0
53

X zsr ( s ) = ( sI A) 1 BU ( s )

3. M hnh ha v m phng

Xy dng m hnh tng qut (concept to first design)

Php bin i Laplace (Lapalace transform)
ng dng cho cc m hnh Bin i Laplace vi phng trnh (2): Y ( s ) = CX ( s ) + DU ( s ) = i vi h l xo/gia trng/gim chn: D = 0 Hm truyn: H ( s ) = C ( sI A) 1 B H(s) l ma trn c: s hng = s bin trng thi, s ct l bin li vo

= C [X zir ( s ) + X zsr ( s )] + DU ( s )

p li ra: Yzsr ( s ) = CX zsr ( s ) = C ( sI A) 1 BU ( s ) = H ( s )U ( s )

1 1 1 ( )( ) m s s s s 1 2 H ( s ) = ms + bs + k = s s 1 ms + bs + k m ( s s1 )( s s 2 )

s1, 2 =

b b k = 2m 2m m
54

2 = 2 0

3. M hnh ha v m phng

Cc phng php m phng

Cc bi ton c hc cu trc c m t bng cc phng trnh o hm ring mt s lng ln cc phng trnh cn c gii tm nghim cho mi im trn ton b m hnh (hay mt min) phc tp kh thc hin vi phng php gii tch thng thng cc phng php gii s gn ng c s dng vi cng c l my tnh thng qua mt ngn ng lp trnh hoc mt phn mm ng dng. 3 phng php ph bin c ng dng cho MEMS ) Sai phn hu hn (finite differantial method - FDM) ) Phn t hu hn (finite element method - FEM) ) Th tch hu hn (finite volume method - FVM) c im ) Bin i cc phng trnh vi phn thnh phng trnh i s xp x ) Chia nh cu trc thnh mng li (grid hay mesh) ) Gii h cc phng trnh i s
55

3. M hnh ha v m phng

Cc phng php m phng

FDM FVM

FEM

56

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
) Xut pht t cch xc nh khong cch gia 2 im = php tr php sai phn Sai phn tin: F(P) = F(P+P) - F(P) Sai phn li: F(P) = F(P) - F(P-P) Sai phn gia: F(P)=- F(P-1/2P) - F(P-1/2P) ) nh ngha php ly o hm
P-P P

P+P

P - P P +

F ' ( P ) = lim
) Nu hu hn:
F ' ( P) =

F ( P + P ) F ( P ) 0
F ( P + P ) F ( P )

57

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
Bi ton ng: bin i hin (explicit method) ) S dng php sai phn tin thi im tj
+1 n un u j j n n +1 un u u 2 + j 1 j j

h2 n n +1 = (1 2r )u n un j j + ru j 1 + ru j +1 k

V i r = k / h 2

Bi ton ng: bin i n (implicit method) ) S dng php sai phn li thi im tj+1
+1 un un j j

k h2 n +1 i i +1 i +1 (1 + 2r )u j = u j + ru j 1 + ru j +1

1 i +1 i 1 u ij+ 1 2u j 1 + u j 1

V i r = k / h 2
58

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
Bi ton ng: bin i Crank-Nicolson ) S dng php sai phn gia thi im t(j+1)/2
+1 n un u j j +1 n +1 n +1 n n n + + un 2 u u u 2 u u 1 j +1 j j 1 j +1 j j 1 = + 2 2 2 h h

n +1 n n n n +1 n +1 ( 2 + 2r )u j = ( 2 2r )u j + r (u j 1 + u j +1 ) + r (u j 1 + u j +1 )

V i r = k / h 2

59

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
Cc bc thc hin ) a bi ton v dng khng th nguyn. ) Xy dng thut ton. ) M ha thut ton bng cch s dng cc ngn ng bin dch (C, pascal, Fortran) hoc cc phn mm ng dng (MatLAB, Mathematica) vit chng trnh tnh ton cho yu cu ca bi ton (lp trnh). ) Thc hin gii bi ton v phn tch kt qu.

60

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
j-1 j 10 2 9 3 0 (i,j) 8 12 M ng 7 6 4 5 11 j+1

ng dng FDM m phng lch (un cong) mng mng ca cm bin p sut ) Phng trnh lch mng khi c p sut
D

i-1 i i+1

w w w + 2 D + D = P(x, y) x 4 x 2y 2 y 4
4 4 4

) Phng trnh lch mng khng th nguyn

4w
4

x x y y ) Xy dng thut ton thng qua php sai phn

+2

4w
2 2

4w
4

=1

1 1

w0
2

w1 2 w 0 + w 5 2

w0
2

w3 2w0 + w7 2

61

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
w0
4

ng dng FDM m phng lch (un cong) mng mng ca cm bin p sut

4 1

w9 4w1 + 6w0 4w5 + w11 4

1 4

4 1

4 w0

w10 4w3 + 6w0 4w7 + w12 = 4 4 y

1 1

w2 2w1 + w8 2 w3 2w0 + w7 + w4 2w5 + w6 = 2 2 4 x y 1

4 w0

20

62

3. M hnh ha v m phng

Cc phng php m phng

Phng php FDM
ng dng FDM m phng lch (un cong) mng mng ca cm bin p sut ) Phng trnh i s tuyn tnh: a11x1 + a12 x 2 + ... + a1N x N = b1 Hay: AX = B Vi:

a x + a x + ... + a x = b 21 1 22 2 2N N 2 ... a N1x1 + a N2 x 2 + ... + a NN x N = b N

a11 , a12 ,..., a1N x1 b1 , ,..., a a a 2N x2 b2 A = 21 22 B = = X ... ... ... a , a ,..., a b NN N1 N 2 x N N

) Gii bi ton xc nh n s: X = B.A-1

63

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
) tng chia mt cu trc phc tp thnh nhng khi nh (phn t) c cu trc n gin v d dng khng ch. Hnh trn = hnh tam gic, c din tch:
1 S i = R 2 sin i 2
Element Si

Din tch hnh trn:

N

1 2 S N = Si = R 2 N sin R 2 khi N 2 N i =1

) Mt cu trc c c trng bi ma trn h s cng (stifffness). ) Mi phn t, ma trn h s cng lin kt c cu trc bng phng trnh c bn.
64

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
) Khi mt cu trc c chia (mesh) thnh cc phn t, ma trn cng ca ton b cu trc c mi thnh phn l cng ca mi phn t tng ng. ) Nu cu trc chu tc dng ca mt ngoi lc F phng trnh quan h gia F v dch chuyn (chuyn v) vi h s t l l h s cng. {F} = {k}.{x} {x}= {k}-1.{F} ) Ta , kch thc, sut n hi Young, t s Poisson hay khi lng ring (density) l cc thng s u vo gii phng trnh ny. ) FEM l phng php ri rc ha mt min phc tp thnh cc min con n gin, c cng tnh cht, gi l cc phn t (element) m c m t bng cc phng trnh ton, th hin hnh vi ca n vi mt ti xc nh. Tng hp tt c cc hnh vi trong m hnh s cho ta hnh vi chung ca c h vt l.
65

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
) Cu trc c to t cc phn t c s gm: mt phng 4 cnh (quadrilateral plates), mt phng tam gic (triangular plates), khi (solid brick element), hay thanh mng (beam).
Nt (node) Phn t 1 chiu 1-D (line) element (spring, beam, truss, pipe) Phn t 3 chiu 3-D (solid) element (trng vt l 3 chiu: nhit , chuyn v, ng sut, dng chy)
66

Phn t 2 chiu 2-D (plane) element (membrane, plane, shell)

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
H s n hi - cng (stiffness) ca l xo L xo (phn t n hi) chu tc dng ca ngoi lc F dch chuyn (bin dng) on :

F = k = k (u j u i )

L 3 Newton cp lc cn bng ti 2 v tr ca chuyn di - nt (node) i v j:

f i = F = k (u j u i ) = ku i ku j f j = F = k (u j u i ) = ku i + ku j
Hay: k

k ui f i = ku = F k u j f j

F k = u

67

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
H s cng ca thanh (bar) Thanh (bar) c di L, thit din ngang A, h s n hi E, dch chuyn u(x), bin dng (x) v ng sut (x). c =

F EA EA = k vi: k = Mt khc: = F = A = A L L EA EA EA 1 1 k k L L = ) Thanh ng x nh l xo k = = 1 1 EA EA k k L ) Phng trnh cn bng phn t: L L EA 1 1 u i f i ) Ct th j (=1, 2) ca ma trn k th hin lc = tc dng ln bar duy tr tnh trng bin dng 68 L 1 1 u j f j ti nt j v khng bin dng ti cc nt khc
E v = E = L

du u i u j = = dx L L

3. M hnh ha v m phng

Cc phng php m phng

Phng php FEM
Hm hnh dng v nng lng bin dng x x uj u u x + ( ) = 1 ) Chuyn v u(x) dc theo trc x: i L L x ) Hm hnh dng: N i () = 1 N j () = Vi = 0 1 L ui u ( x ) = u () = N i ()u i + N j ()u j = N i () N j () = Nu uj du d Khi = = N u = Bu B: ma trn (h s t l) bin dng-chuyn v dx dx B = [ 1 / L 1 / L ] v = E = EBu

) NL bin dng: th nng lu tr trong h bin dng n hi, c gi tr bng cng h thc hin to ra bin dng . Vi thanh c U = W = F . = AL = V
1 2 1 2 1 2
69

3. M II.hnh C s ha v v c m i ph n ng

Cc phng php m phng

Phng php FEM
H s cng tng qut Hm nng lng bin dng tng qut:
U= 1 T 1 1 T T T T dV u B EBu dV u B EB dV = = u 2V 2V 2 V

Trong : T v uT v BT l cc ma trn hon v (hng ct) Cng thc hin bi 2 lc nt W = U =

1 1 1 f i ui + f j u j = u T f 2 2 2 hay 1 u T B T EB dV u = 1 u T f B T EB dV u = f = ku 2 V 2 V

) Ma trn cng phn t:

k = B T EB dV
V

1 Hm nng lng bin dng thu gn U = u T ku 2

p dng chung cho mi loi phn t 70

3. M II.hnh C s ha v v c m i ph n ng

Cc phng php m phng

Phng php FEM
Phn mm ng dng ca FEM ) ANSYS, NASTRAN, ABAQUS, COSMOS, ALGOR, PATRAN, hyperMESH, Dyna-3D ) c vit ch yu bng ngn ng FORTRAN Cc bc thc hin ) Thc hin xy dng m hnh (modeling) i tng cn tnh ton, nhp cc thng s vt liu c trng (Material Properties), xc lp kiu phn t (Element Type), chia nh i tng thnh mt s lng cc phn t (Mesh), t cc iu kin bin (Boundary Condition) xc lp vng khng chu ti (Constrains) v vng chu ti (Load), cng nh iu kin ban u (Initial Condition). ) Gii h cc phng trnh i s tuyn tnh (p dng phng php loi tr Gauss) tm bin chnh l chuyn v{u} v bin ph l bin dng, ng sut, moment 71 ) Phn tch v x l kt qu tnh ton.

3. M II.hnh C s ha v v c m i ph n ng

Cc phng php m phng

Phng php FEM
ng dng FEM trong cc bi ton k thut

72

3. M II.hnh C s ha v v c m i ph n ng

Cc phng php m phng

Phng php FEM
ng dng FEM (ANSYS) trong MEMS
M phng hot ng ca cm bin gia tc M phng hot ng ca bnh rng vi c

M phng hot ng ca cm bin o pH73 do hiu ng swelling ca polymer hydrogel

3. M II.hnh C s ha v v c m i ph n ng

Cc phng php m phng

So snh FDM v FEM
) FDM v FEM u cho li gii trn ton b min tnh ton v khng cn tnh lin tc. FEM mnh v kh nng x l cc bi ton c hnh hc phc tp trong khi FDM ch gii hn nhng i tng c hnh dng n gin ) C s ton hc ca php gn ng trong FEM cho php vic chia nh i tng thc hin tnh ton mnh hn FDM. Tuy nhin FDM d thc hin, trong khi FEM i hi qu trnh tnh ton nhiu hn v lu hn sai s trong cc tnh ton ca FEM nh hn so vi FDM. ) FEM c la chn ch yu cho cc bi ton cu trc c hc trong khi FDM ph hp hn cho cc ton v ng hc cht lu (computational fluid dynamics - CFD). ) C rt nhiu phn mm c vit sn cho FEM, tch hp (nhng) phn x l ha (CAD), km theo cc b th vin cha tng i y cc loi phn t, cc dng bi ton k thut trong thc t nn rt thun li cho ngi s dng kt qu tnh ton c biu din bng s liu, th, hnh nh 2,3 chiu v 74 c bit l nh ng (animation) di dng file ui .avi.

III. Thit k trong MEMS

1. M u/ Introduction 2. Cc h qu khi thu nh kch thc /

Scaling issues for MEMS

3. M hnh ha v m phng/
Modeling and Simulation

4. Thit k qui trnh ch to/

Process integration

5. Kt lun/Conclusions
75

4. Thi II. C t k squi v trnh c ch in to

Thit k qui trnh ch to

) Xy dng cc bc cng ngh chi tit cho ch to linh kin (fabrication layout) ) Thit k b MASK (mt n) quang hc

76

4. Thi II. C t k squi v trnh c ch in to

Cc nguyn l thit k qui trnh

) Chn cch thc th hin cu trc linh kin d dng phc tho hnh dng linh kin cho qui trnh ch to: - Hnh v 3 chiu bng cc cng c thit k trn my tnh (CAD) - Hnh v mt ct th hin c cu trc y ca linh kin ) La chn cng ngh v cch thc ch to: - Vi c khi kh (hoc t) hay vi c b mt - Thc hin to cu trc in trc (front-end process) hay cu trc c trc (back-end process). - Cn nhc cc bc cng ngh sao cho bo m an ton ca cu trc cn ch to (do c tnh ca cu trc linh kin MEMS rt mnh mai, d b gy hay v). ) Lun kt hp gia thit k v kim tra mt qui trnh ch to m bo tnh n nhng yu t cng ngh lm tng tnh chnh xc ca qui trnh. ) Lu n tnh cht khng ng u ca b mt phin trc v ngay trong qu trnh ch to (cc bc cng ngh lm thay i phn b b mt phin) 77 trnh b tr linh kin st mp phin

4. Thi II. C t k squi v trnh c ch in to

nh hng ca cng ngh ch to

Gii hn ca k thut quang khc (photolithography)
) Cc chi tit ca linh kin MEMS c nh dng, to nh v n mn hoc bc lp (lift-off) bng qui trnh quang khc ) Gii hn quang khc l kh nng to ra kch thc nh nht c th cho linh kin kch thc chi tit (feature size - FS) hay kch thc ti hn (critical dimension CD), xc nh bng rng vch (line width - w) v qui tc thit k khong cch (space design rules - s) . ) Vi phm qui tc khng t c cu trc mong mun
a < FS

Chi tit trn MASK quang hc

Chi tit c nh dng

78

4. Thi II. C t k squi v trnh c ch in to

nh hng ca cng ngh ch to

Gii hn ca k thut quang khc (photolithography)
) Hiu ng quang hc (giao thoa, nhiu x) lm cho chi tit cn c nh dng trong qui trnh quang khc b thay i khu vc vin mp (distorted edge effect).
Dng hnh hc trn MASK quang

Chi tit sau khi c nh dng

79

4. Thi II. C t k squi v trnh c ch in to

nh hng ca cng ngh ch to

Gii hn ca k thut quang khc (photolithography)
) Gii hn khong cch tiu c (depth focus) ca knh hin vi trn thit b quang khc ) Du so MASK (alignment marks) quyt nh tnh chnh xc ca qui trnh ch to phn gii ca h quang hc trn thit b quang khc cn c tnh n khi thc hin thit k b MASk quang hc. ) Hin tng ng sut ni xut hin khi ph lp cm quang (photoresist) c th lm nh hng n tnh chnh xc ca chi tit cn ch to .

80

4. Thi II. C t k squi v trnh c ch in to

nh hng ca cng ngh ch to

Gii hn ca k thut n mn (etching)
) Vt liu bo v (mask) b mt phin thch hp m bo: - Chu ng c thi gian di trong qui trnh n mn t. - Chu c nhit cao ca mi trng plasma trong qu trnh n mn kh. ) Hin tng n mn ngang: - Notching effect trong k thut n mn kh. - Undercutting lm cu trc cn n mn b lm gc () trong k thut n mn t

Convex corner

Notching effect

81

4. Thi II. C t k squi v trnh c ch in to

Kim tra thit k (design rule checking)

) Thc hin m hnh ha qui trnh ch to da trn nguyn l vt l (physicbased process modeling tool): Ch yu l cc phng php m hnh ha v phng qu trnh to mng mng cng nh n mn cung cp cc thng tin v thng s qu trnh gip xy dng c hnh nh c th ca linh kin s c ch to. ) Thc hin m hnh ha qui trnh ch to da trn cc bc cng ngh (geometric emulation of MEMS processes): m t hnh dng nhn c sau mi bc cng ngh kt ni vi nhau xy dng cu trc hnh hc hon chnh ca linh kin s c ch to.

82

4. Thi II. C t k squi v trnh c ch in to

Kim tra thit k (design rule checking)

Hnh hc ca MASK (2 D) Xc inh qui trnh

Cng c to nh o

nh o 3D nh o 2-D (mt ct dc)

83

4. Thi II. C t k squi v trnh c ch in to

Cc cng c thit k (design tools)

) Thit k MASK: Corel Draw, LEdit, ) Thit k qui trnh: SUMMiT, MEMCAD, SIMULINK

84

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (back-end process)

) Thc hin trn thit b quang khc 1 mt (one-side aligner) ) Ch to theo cng ngh vi c khi (bulk microfabrication) s dng qui trnh n mn t (wet etching) ) Ch to cu trc c (mng mng nhy p sut) trc, cu trc in sau.
85

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (back-end process)

) Thit k b MASK (corel draw)

86

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (back-end process)

) Thit k b MASK (corel draw)

87

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (front-end process)

) Thc hin trn thit b quang khc 2 mt (two-side aligner) ) Ch to theo cng ngh vi c khi (bulk microfabrication) s dng qui trnh n mn t (dry etching) ) Ch to cu trc in trc, cu trc c (mng mng nhy p sut) sau.
1 8

4 Si Buried SiO2 SiO2

5 Al

Boron doping layer

88

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (front-end process)

MASK 1

MASK 2

) Thit k b MASK (LEDit)

89

4. Thi II. C t k squi v trnh c ch in to

Qui trnh ch to cm bin p sut p in tr (front-end process)

MASK 3

MASK 4

) Thit k b MASK (LEDit)

90

5. Kt lun ) Nhng nhu cu ca th trng, kh nng cng ngh kt hp vi tng sng to l c s cho vic thc hin thit k mt linh kin MEMS. ) Cc nguyn l, nh lut vt l kch thc vi m s a n cc hiu ng khc so vi mc v m i hi cc tnh ton v thit k ph hp. ) Thit k MEMS l cng vic phc tp i hi cc kh nng t duy tru tng v ton hc thng qua thc hin m hnh ha v m phng (tnh ton) cc ng x ca linh kin. ) Thit k qui trnh ch to cn tun th cc qui tc thit k v kim tra thit k nhm t to ra c mt qui trnh cng ngh ch to ti u, ph hp cc iu kin thc t.
91