MEC 210

NANOELECTRONICS DEVICES ENGINEERING

Maximum Marks: 70 Minimum Pass Marks: 40%

Maximum Time: 3 Hrs. Lectures to be delivered: 45-55

Instructions for paper-setter: The question paper will consist of five sections A, B, C, D and E. Sections A, B, C and D will have two questions from the respective sections of the syllabus. Section E will have one question with 10 short answer objective type parts, which will cover the entire syllabus uniformly. All questions will carry same marks. Instructions for candidates: Candidates are required to attempt one question each from sections A, B, C and D of the question paper and the entire section E.

SECTION-A Introduction: Nano, Size matters, Fundamental Science Behind Nanotechnology, Tools of Nanosciences.

SECTION-B Silicon Nanoelectronics and Ultimate CMOS Microelectronic Transistor: Structure, operation, Obstacles to Miniaturization: Structure and Operation of a MOSFET, Obstacles to Further Miniaturization of FETs.

SECTION-C Solid State Quantum Effect and Single-electron Nanoelectronic Devices: Island, Potential Wells, and Quantum effects, Resonant Tunneling Devices, Distinction Among Types of nanoelectronic devices. Devices: Other Energetic Effects, Taxonomy of Nanoelecronic Devices, Drawbacks and Obstacles to Solid-State Nanoelectronic Devices. SECTION-D Molecular Electronics: Molecular Electronic Switches Devices, Background of Molecular Electronics, Molecular Wires, Quantum- effect Molecular Electronic Devices, Electromechanical Molecular Electronic Devices. Introduction to nanolithography devices.

References: 1. Ratner, Nanotechnology, A Gentle Introduction to Next Big Idea, Pearson 2 3 Overview of Nanoelectronic Devices, IEEE Proceedings. Silicon Nanoelectronics By Shunri Oda