Silicon NPN Triple Diffused Planar Transistor: (High Voltage Switchihg Transistor)

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2SC4517/4517A

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
(Ta=25C) Unit V V V A A W C C

Application : Switching Regulator and General Purpose


(Ta=25C)

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=0.25A VCB=10V, f=1MHz

External Dimensions FM20(TO220F)


4.00.2 10.10.2 4.20.2 2.8 c0.5

Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25C) 150 55 to +150 1000

2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ

Unit

A
V V
13.0min 16.90.3 8.40.2

V MHz pF

1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2

sTypical Switching Characteristics (Common Emitter)


VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.15 IB2 (A) 0.45 ton (s) 0.7max tstg (s) 4max tf (s) 0.5max

2.54

3.9 B C E

0.2

I C V CE Characteristics (Typical)
3
40 0m A

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)


Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.5 I C /I B =5 Const.

I C V BE Temperature Characteristics (Typical)


3 (V C E =4V)

300mA

200 mA

Collector Current I C (A)

150 mA
2
100m A

Collector Current I C (A)

1.0 V B E (sat)

I B =40mA

0.5

V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0

Collector-Emitter Voltage V C E (V)

Collector Current I C (A)

Base-Emittor Voltage V B E (V)

(V C E =4V) 50 DC C urrent G ain h FE 125C 25C

j - a ( C/W)

h FE I C Temperature Characteristics (Typical)


t o n t s t g t f ( s)
7 5

t on t stg t f I C Characteristics (Typical)

j-a t Characteristics
4

V C C 250V I C :I B 1 :I B2 =1:0.15:0.45 1 0.5 t on 0.1 0.2 tf

55C

Transient Thermal Resistance

t s tg

Sw it ching Time

10

0.5 0.3

5 0.02

0.05

0.1

0.5

0.5

10 Time t(ms)

0.80.2

a b

3.30.2

Weight : Approx 2.0g a. Type No. b. Lot No.

100

1000

Collector Current I C (A)

Collector Current I C (A)

Safe Operating Area (Single Pulse)


10
50

Reverse Bias Safe Operating Area


10 30

P c T a Derating

Ma xim um Powe r Dissipat io n P C (W)

10

W ith

Collector Curr ent I C (A)

1 0.5

Co lle ctor Cu rre nt I C (A)

1 0.5

20

In fin ite he at si nk

0.1 0.05 Without Heatsink Natural Cooling

0.1 0.05

Without Heatsink Natural Cooling L=3mH IB2=1.0A Duty:less than 1% 2SC4517

10

2SC4517A 1000

Without Heatsink 2 0 0 25 50 75 100 125 150

0.01 2

10

50

100

500 1000

0.01 50

100

500

Collector-Emitter Voltage V C E (V)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

112

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