Professional Documents
Culture Documents
Silicon NPN Triple Diffused Planar Transistor: (High Voltage Switchihg Transistor)
Silicon NPN Triple Diffused Planar Transistor: (High Voltage Switchihg Transistor)
Silicon NPN Triple Diffused Planar Transistor: (High Voltage Switchihg Transistor)
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
(Ta=25C) Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=0.25A VCB=10V, f=1MHz
Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25C) 150 55 to +150 1000
Unit
A
V V
13.0min 16.90.3 8.40.2
V MHz pF
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 B C E
0.2
I C V CE Characteristics (Typical)
3
40 0m A
300mA
200 mA
150 mA
2
100m A
1.0 V B E (sat)
I B =40mA
0.5
V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0
j - a ( C/W)
j-a t Characteristics
4
55C
t s tg
Sw it ching Time
10
0.5 0.3
5 0.02
0.05
0.1
0.5
0.5
10 Time t(ms)
0.80.2
a b
3.30.2
100
1000
P c T a Derating
10
W ith
1 0.5
1 0.5
20
In fin ite he at si nk
0.1 0.05
10
2SC4517A 1000
0.01 2
10
50
100
500 1000
0.01 50
100
500
112