Preliminary Data

BSS 159
SIPMOS Small-Signal Transistor

N channel Depletion mode High dynamic resistance

Pin 1 G

Pin 2 S

Pin 3 D

Type

VDS

ID

RDS(on)

Package SOT-23

Marking SEs

Ordering Code Q67000-S321

BSS 159

50 V

0.16 A

Maximum Ratings Parameter Symbol Values Unit

Drain source voltage Drain-gate voltage

RGS = 20 k

VDS V
DGR

50

50
VGS Vgs ID

Gate source voltage Gate-source peak voltage, aperiodic Continuous drain current
TA = 25 C

14 20
A 0.16

DC drain current, pulsed

TA = 25 C

IDpuls

0.48
Ptot

Power dissipation
TA = 25 C

W 0.36

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate - reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA RthJSR

-55 ... + 150 -55 ... + 150

350 285
E 55 / 150 / 56

K/W

Data Sheet

05.99

BSS 159

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol min.

Values typ. max.

Unit

Static Characteristics

Drain-source breakdown voltage

VGS = -10 V, ID = 250 A

(BR)DSV

V 50 -

Gate threshold voltage

VDS = 3 V, ID = 10 A

V GS(th)

-3
I
DSV

-2.5

-1.5 A

Drain-source cutoff current

VDS = 50 V, VGS = -10 V, Tj = 25 C

ID(on)

1 mA

On-state drain current

VGS = 0 V, V DS = 10 V

70
IGSS

200

nA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

RDS(on)

10

100

Drain-Source on-resistance
VGS = 0 V, ID = 0.07 A

4 8

Data Sheet

05.99

BSS 159

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit

Transconductance
VDS 2 * ID * RDS(on)max, ID = 0.16 A

gfs

S 0.1 0.16 pF 70 100

Input capacitance
VGS = -4.5 V, VDS = 25 V, f = 1 MHz

Ciss

Output capacitance
VGS = -4.5 V, VDS = 25 V, f = 1 MHz

Coss

Crss

15

25

Reverse transfer capacitance

VGS = -4.5 V, VDS = 25 V, f = 1 MHz

td(on)

9 ns

Turn-on delay time

VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50

tr

11

Rise time
VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50

td(off)

11

17

Turn-off delay time

VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50

tf

13

17

Fall time
VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50

14

19

Data Sheet

05.99

BSS 159

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit

Inverse diode continuous forward current

TA = 25 C

IS

A 0.1

Inverse diode direct current,pulsed

TA = 25 C

ISM

V SD

0.3 V

Inverse diode forward voltage

VGS = 0 V, IF = 0.3 A

0.8

1.3

Data Sheet

05.99