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    This document describes experiments to characterize the behavior of logic gates. It instructs measuring the current and voltages at different input voltages for an inverter circuit using a transistor. It also instructs implementing an inverter using a TTL NAND gate and measuring its transfer characteristic. Finally, it instructs applying a square wave signal to the NAND gate inverter and measuring propagation delays, rise time and fall time to plot the input and output waves.

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    This document describes experiments to characterize the behavior of logic gates. It instructs measuring the current and voltages at different input voltages for an inverter circuit using a transistor. It also instructs implementing an inverter using a TTL NAND gate and measuring its transfer characteristic. Finally, it instructs applying a square wave signal to the NAND gate inverter and measuring propagation delays, rise time and fall time to plot the input and output waves.

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    This document describes experiments to characterize the behavior of logic gates. It instructs measuring the current and voltages at different input voltages for an inverter circuit using a transistor. It also instructs implementing an inverter using a TTL NAND gate and measuring its transfer characteristic. Finally, it instructs applying a square wave signal to the NAND gate inverter and measuring propagation delays, rise time and fall time to plot the input and output waves.

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    Download as PDF, TXT or read online from Scribd
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    3 views1 page

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    Milo Latino
    This document describes experiments to characterize the behavior of logic gates. It instructs measuring the current and voltages at different input voltages for an inverter circuit using a transistor. It also instructs implementing an inverter using a TTL NAND gate and measuring its transfer characteristic. Finally, it instructs applying a square wave signal to the NAND gate inverter and measuring propagation delays, rise time and fall time to plot the input and output waves.

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    UNIVERSIDAD TECNICA DEL NORTE FACULTAD DE INGENIERIA EN CIENCIAS APLICADAS LABORATORY 1

    BASIC PARAMETERS OF LOGICAL GATES

    Ic

    1. With Q1(transistor 2N3707 or similar) working in the cutoff and saturation regions, design an inverter as in the figure. Apply inV1 a variable voltage from -0,2V. to 5 V. in suitable steps (0,2 V), measure Ic,Ib,V2,Vbe for each value. Repeat the procedure from 5V. to -0,2V.

    Sketch: V1 vs Ib Ib Vbe vs Ib V2 vs V1

    2. Now using a quad 2-input TTL NAND gate (7400). Implement one inverter in two different ways. As was made above, take suitable measurements to sketch the transfer characteristic of this gate. 3. With the NAND gate as inverter, and using a square wave signal of 5 V. peak, 100 kHz as input, find for this gate: propagation delay times (tpHL, tpLH), rise time ( tR) and fall time (tF). Plot the input and output waves in a common scale.

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