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    This document contains 3 physics homework problems about pn junction diodes: 1) Calculate the maximum forward bias voltage within 10% of Ohm's law for a given pn junction at 300K, and the corresponding current density. 2) Determine the forward bias voltage at 310K for a silicon diode with given saturation current and constant current of either 0.1mA or 1mA. 3) Calculate the ratio of donor and acceptor concentrations needed for an electron injection efficiency of 0.9, given diffusion constants, lifetimes, and the definition of injection efficiency.

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    This document contains 3 physics homework problems about pn junction diodes: 1) Calculate the maximum forward bias voltage within 10% of Ohm's law for a given pn junction at 300K, and the corresponding current density. 2) Determine the forward bias voltage at 310K for a silicon diode with given saturation current and constant current of either 0.1mA or 1mA. 3) Calculate the ratio of donor and acceptor concentrations needed for an electron injection efficiency of 0.9, given diffusion constants, lifetimes, and the definition of injection efficiency.

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    6 views1 page

    HW 9

    Uploaded by

    cebuano88
    This document contains 3 physics homework problems about pn junction diodes: 1) Calculate the maximum forward bias voltage within 10% of Ohm's law for a given pn junction at 300K, and the corresponding current density. 2) Determine the forward bias voltage at 310K for a silicon diode with given saturation current and constant current of either 0.1mA or 1mA. 3) Calculate the ratio of donor and acceptor concentrations needed for an electron injection efficiency of 0.9, given diffusion constants, lifetimes, and the definition of injection efficiency.

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    Physics 3313, Homework #9 (due 4/14) P1 (a) For a pn junction at T =300 K, what is the maximum forward bias voltage

    for which the deviation from the Ohms law (I = V /R) is within 10%? (b) What is the corresponding current density? Assume ni = 1.5 1010 cm3 , Nd = 5 1015 cm3 , Na = 5 1016 cm3 , Dn = 25 cm2 /s, Dp = 10 cm2 /s, n = p = 5 107 s. P2 (a) A silicon diode (Eg = 1.12 eV) is forward-biased with a constant current source ID =0.1 mA. The saturation current at T =300 K is IS = 1015 A. Assuming that D/L for electrons and holes are independent of temperature, determine the bias voltage at T =310 K. (b) Repeat part (a) if ID =1 mA. P3 For a pn junction with Dn = 25 cm2 /s, Dp = 10 cm2 /s, n = p = 5 107 s, what is the ratio of concentrations of donors in the n-region and acceptors in the p-region such that the electron injection eciency (dened as the ratio of electron current crossing the depletion region to the total current) is 0.9?

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