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COOLMOS

on-state resistance by compensation. Conduction losses are at least 5 times less. Handle 2 to 3 times more power than conventional MOSFET in the same package. Active chip area is 5 times smaller than standard MOSFET. Used up to power range of 2 kVA e.g high-voltage converters for microwave and medical systems. Above 100 kHz, offer a superior current-handling capabilities such as smallest chip area at a given current. Has the advantage of intrinsic inverse diode. Clamps ve undershoots.

Doping of current conducting n-doped layer is enhanced.

High blocking voltage VBR requires thick and low-doped epitaxial layer. Drain to Source resistance is related to VBR by RD(on)=VBRk. This limitation is implemented into the drift region by adding columns of opposite doping type. This concept requires compensation of additional charge in the n region by the adjacently situated p-doped regions. Due to this lateral electric field is created that does nit alter with the vertical electric field. The electric field inside the structure is fixed by the net charge of the two opposite doped columns. As a result horizontal field distribution can be achieved if both regions counter balance each other perfectly. Adjacent pairs of P- and n- doped regions requires practically zero net charge. Any charge imbalance impact the blocking voltage of the device.