PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122

PACKAGE DIMENSIONS
0.195 (4.95)

QSD123

QSD124

REFERENCE SURFACE

0.305 (7.75)

0.800 (20.3) MIN EMITTER

0.040 (1.02) NOM

COLLECTOR

SCHEMATIC
0.500 (1.25) 0.100 (2.54) NOM

COLLECTOR

0.240 (6.10) 0.215 (5.45)

NOTES:

0.020 (0.51) SQ. (2X)

1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.

EMITTER

DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.

FEATURES
NPN Silicon Phototransistor Package Type: T-1 3/4 Notched Emitter: QED12X/QED22X/QED23X Narrow Reception Angle: 24C Daylight Filter Package Material and Color: Black Epoxy High Sensitivity

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122

ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW

QSD123

QSD124

NOTE: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16 (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS

PARAMETER TEST CONDITIONS

(TA =25C)
SYMBOL MIN TYP MAX UNITS

Peak Sensitivity Wavelength Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current(5) QSD122 QSD123 QSD124 Saturation Voltage(5) Rise Time Fall Time

VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A

!PS " ICEO BVCEO BVECO

30 5 1.00 4.00 6.00

880 12 7 7

100 6.00 16.00 0.4

nm Deg. nA V V

Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, IC = 0.5 mA VCC = 5 V, RL = 100 V IC = 0.2 mA

IC (ON) VCE (SAT) tr tf

mA V s

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122

Figure 1. Light Current vs. Radiant Intensity
100

QSD123
100 90 80

QSD124

Figure 2. Angular Response Curve

110 120 70 60 50 40 30 20 10 0 1.0

IC(ON) - Light Current (mA)

130
10

140 150 160

170 180 1.0

0.1 0.0

0.8

0.6

0.4

0.2

0.0

0.2

0.4

0.6

0.8

0.2

0.4

0.6 2

0.8

1.0

Ee - Radiant Intensity (mW/cm )

Figure 3. Dark Current vs. Collector - Emitter Voltage

101
101

Figure 4. Light Current vs. Collector - Emitter Voltage

Ie=1mW/cm 2 Ie=0.5mW/cm 2 Ie=0.2mW/cm 2 Ie=0.1mW/cm 2
10-1

ICEO - Dark Current (nA)

100

I L - Normalized Light Current

100

10-1

10-2

10-2

Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC

10-3

10

15

20

25

30

10-3 0.1

10

VCE - Collector-Emitter Voltage (V)

VCE - Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

104

ICEO - Normalized Dark Current

Normalized to: VCE = 25V

103

TA = 25 oC

102

VCE =25V VCE =10V

101

100

10-1 -40

-20

20

40

60
o

80

100

TA - Ambient Temperature ( C)

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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