2SC4467

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 120 6 8 3 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C

Application : Audio and General Purpose

(Ta=25C) Ratings 10max 10max 120min 50min 1.5max 20typ 200typ V pF
20.0min 4.0max

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=0.5A VCB=10V, f=1MHz

External Dimensions MT-100(TO3P)

5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1

Unit

A A
19.90.3

4.0

a b

3.20.1

MHz

2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4

O(50 to100), P(70 to140), Y(90 to180)

5.450.1 B C E

sTypical Switching Characteristics (Common Emitter)

VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.4 IB2 (A) 0.4 ton (s) 0.13typ tstg (s) 3.50typ tf (s) 0.32typ

5.450.1

Weight : Approx 6.0g a. Part No. b. Lot No.

I C V CE Characteristics (Typical)
350m

V CE ( sat ) I B Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

I C V BE Temperature Characteristics (Typical)

8 (V C E =4V)

20

m 50

0m

m 100

A
75 m A

Collector Current I C (A)

50m A

Collector Current I C (A)

4
mp)

mp)

Cas

C (

(Cas

I B =10mA

I C =8A 0 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 0

0.1 0.2 0.3 0.4

0.5

30C

25C

125

(Case

e Te

20mA

e Te

Temp

1.0

1.5

Collector-Emitter Voltage V C E (V)

Base Current I B (A)

Base-Emittor Voltage V B E (V)

h FE I C Characteristics (Typical)
(V C E =4V) 200 DC Curr ent Gain h FE

h FE I C Temperature Characteristics (Typical)

(V C E =4V) 200 125C DC Curr ent Gain h FE

j- a ( C/W)

j-a t Characteristics
3

Typ
100

100

25C 30C

Transient Thermal Resistance

50

50

0.5

20 0.02

0.1

0.5

20 0.02

0.3

0.1

0.5

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

f T I E Characteristics (Typical)
(V C E =12V) 40 20

Safe Operating Area (Single Pulse)

80
10 m s

P c T a Derating

Cut-o ff Fr equ ency f T (M H Z )

30 Collector Cur rent I C (A)

M aximum Power Dissipa ti on P C ( W)

10 5

100ms

60

W ith

Typ

DC

In fin ite he

20

40

at si

nk

0.5 Without Heatsink Natural Cooling

10

20

Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

108