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  • Silicon NPN RF Power Transistor: Description: The Mrf237 Is Package Style To-39

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    Marcio AP Avs
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    The MRF237 is a silicon NPN RF power transistor designed for power amplifier applications up to 225 MHz. It has a TO-39 package style and can handle a maximum collector current of 1A, collector-emitter voltage of 18V, and collector-base voltage of 36V, dissipating up to 8W of power. Key electrical characteristics include a minimum breakdown voltage of 18V, gain of 12-50 dB, and maximum efficiency of 62% at 250mA and 175MHz.

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    MRF237

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    The MRF237 is a silicon NPN RF power transistor designed for power amplifier applications up to 225 MHz. It has a TO-39 package style and can handle a maximum collector current of 1A, collector-emitter voltage of 18V, and collector-base voltage of 36V, dissipating up to 8W of power. Key electrical characteristics include a minimum breakdown voltage of 18V, gain of 12-50 dB, and maximum efficiency of 62% at 250mA and 175MHz.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    114 views1 page

    Silicon NPN RF Power Transistor: Description: The Mrf237 Is Package Style To-39

    Uploaded by

    Marcio AP Avs
    The MRF237 is a silicon NPN RF power transistor designed for power amplifier applications up to 225 MHz. It has a TO-39 package style and can handle a maximum collector current of 1A, collector-emitter voltage of 18V, and collector-base voltage of 36V, dissipating up to 8W of power. Key electrical characteristics include a minimum breakdown voltage of 18V, gain of 12-50 dB, and maximum efficiency of 62% at 250mA and 175MHz.

    Copyright:

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    of 1

    MRF237

    SILICON NPN RF POWER TRANSISTOR

    DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz

    PACKAGE STYLE TO-39

    MAXIMUM RATINGS
    IC VCBO VCEO PDISS TJ TSTG JC 1.0 A 36 V 18 V 8.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 22 C/W
    1 = EMITTER 2 = BASE 3 = COLLECTOR

    TRANS1.SYM

    CHARACTERISTICS
    SYMBOL
    BVCEO BVCES BVEBO ICBO hFE COB GPE IC = 10 mA

    TC = 25 C

    TEST CONDITIONS
    IC = 5.0 mA IC = 1.0 mA VCE = 15 V VCE = 5.0 V VCB = 15 V VCC = 12.5 V POUT = 4.0 W IC = 250 mA f = 1.0 MHz f = 175 MHz

    MINIMUM
    18 36 4.0

    TYPICAL

    MAXIMUM

    UNITS
    V V V

    .25 5.0 15 12 50 14 62 20

    mA --pF dB %

    A D V A N C E D S E M I C O N D U C T O R, I N C.
    7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
    Specifications are subject to change without notice.

    REV. A

    1/1

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