ECE 440

Homework 12

Fall 2009

1. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all terminals grounded) and also under normal active bias (emitter junction forward biased, collector junction reverse biased). With the emitter terminal grounded, determine the signs (positive or negative) of the collector voltage VCE and base voltage VBE, relative to the emitter, that correspond to normal bias. 2. A symmetrical p+-n-p+ Si bipolar transistor has the following properties: Emitter Na = 4x1017/cm3 n = 0.2 s p = 140 cm2/V-s n = 500 cm2/V-s Base A = 10-4cm2 Nd = 6x1015/cm3 p = 4 s n = 1160 cm2/V-s p = 420 cm2/V-s Wb =1 m

(a) Determine if the straight-line approximation can be applied to evaluate the excess carriers in the base region. (b) With VEB = 0.5 V and VCB = - 4 V, calculate the base current IB, assuming perfect emitter injection efficiency. (c) Calculate the emitter injection efficiency and the amplification factor , assuming the emitter region is long compared to Ln. 3. A Si p-n-p transistor has the following properties at room temperature: n = p =1 s Dn = Dp =10 cm2/s A = cross-sectional area = 10-5 cm2 NE =1019/cm3, NB =1017/cm3 and NC =1016/cm3 for emitter, base, and collector doping concentrations respectively. WE = 2 m = emitter width W = metallurgical base width = 1.2 m = distance between base-emitter junction and base-collector junction (a) Calculate the neutral base width Wb for VCB = 0 and VEB = 0.4 V, repeat for VCB = 0 and VEB = 0.6 V. (b) Calculate the base transport factor and the emitter injection efficiency for VEB = 0.4 and 0.6 V. (c) Calculate , , IE, IB and IC for the two values of VEB.