Equivalent circuit

Darlington

2SD2560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1

(7 0 )

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2560 150 150 5 15 1 130(Tc=25C) 150 55to+150 Unit V V V A A W C C

Application : Audio, Series Regulator and General Purpose

(Ta=25C) Unit
5.00.2 2.0 1.8

External Dimensions MT-100(TO3P)

15.60.4 9.6 4.80.2 2.00.1

A A
19.90.3

4.0

a b

3.20.1

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

0.65 +0.2 -0.1 1.4

sTypical Switching Characteristics (Common Emitter)

VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 10 IB2 (mA) 10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ

Weight : Approx 6.0g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
15

V CE ( sat ) I B Characteristics (Typical)

Collector-Emitter Saturation Voltage V C E (s at) (V ) 3

I C V BE Temperature Characteristics (Typical)

15 (V C E =4V)

10mA
50mA

3mA
2m A
1.5 mA

1. 0m A

Collector Current I C (A)

10
0.5mA

Collector Current I C (A)

0. 8m A

10

emp

mp) e Te (Cas 25C

30C

I C =.15A I C =.10A 1 I C =.5A

eT

0 0.2

0.5

10

50

100 200

125

1 Base-Emittor Voltage V B E (V)

C (

I B =0.3mA

(Cas

Cas

e Te

mp)

2.2

Collector-Emitter Voltage V C E (V)

Base Current I B (mA)

(V C E =4V) 50000 DC C urrent G ain h FE DC C urrent G ain h FE 50000

12 5C

(V C E =4V)

j- a ( C/W)

h FE I C Characteristics (Typical)

h FE I C Temperature Characteristics (Typical)

j-a t Characteristics
3.0

Typ
10000 5000

Transient Thermal Resistance

10000 5000

1.0

25

0.5

C 30

1000 500 02 0.5 1 Collector Current I C (A) 5 10 15

1000 500 02 0.5 1 Collector Current I C (A) 5 10 15

0.1

10

100 Time t(ms)

1000 2000

f T I E Characteristics (Typical)
(V C E =12V) 80

Safe Operating Area (Single Pulse)

130

P c T a Derating

Maxim um Power Dissip ation P C (W)

Cut- off F req uency f T (M H Z )

60

100

W ith In fin ite he

40

at si nk

50

20

0 0.02 0.05 01

0.5

10

3.5 0

Without Heatsink 0 25 50 75 100 125 150

Emitter Current I E (A)

Ambient Temperature Ta(C)

158