BAR 63 ...

W
Silicon PIN Diode PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz

2 1
VSO05561

BAR 63-04W

BAR 63-05W

BAR 63-06W

Type BAR 63-04W BAR 63-05W BAR 63-06W

Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268

Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2

Package 3=C1/A2 SOT-323

Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S 105 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)

Symbol

Value 50 100 250 150 - 55 ...+150 - 55 ...+150

Unit V mA mW C

VR IF Ptot Tj Top Tstg

RthJA RthJS

340 180

K/W

Junction - soldering point

1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11

Sep-07-1998 1998-11-01

BAR 63 ... W

Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2

Unit

V(BR) IR VF

50 -

V A mV

I (BR) = 5 A
Reverse current

VR = 20 V
Forward voltage

I F = 100 mA
AC characteristics Diode capacitance

CT
0.3 0.21 1.2 1 75 1.4 0.3

pF

VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz

Forward resistance

rf
rr 2 -

I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz

Charge carrier life time

s nH

I F = 10 mA, I R = 6 mA, I R = 3 mA
Series inductance

Ls

Semiconductor Group Semiconductor Group

22

Sep-07-1998 1998-11-01

BAR 63 ... W

Forward current IF = f (TA*;TS)

* mounted on alumina

120
mA

100

TS
90 80

IF

TA

70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150

TA,TS

Permissible Pulse Load R thJS = f(t p)

Permissible Pulse Load

IFmax / IFDC = f(tp)

10 3 10 3

K/W

IFmax / IFDC

10 2

10 2

10 1

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

RthJS

10 1

10 0 -6 10

10

-5

10

-4

10

-3

10

-2

10

10 0 -6 10

10

-5

10

-4

10

-3

10

-2

10

tp

tp

Semiconductor Group Semiconductor Group

33

Sep-07-1998 1998-11-01

BAR 63 ... W

Diode capacitance CT = f (V R) f = 1MHz

Forward resistance rf = f (I F) f = 100MHz

0.5

EHD07139

10 2

EHD07138

C T pF
0.4

rf

10 1
0.3

0.2

10 0
0.1

10

20

V VR

30

10 -1 -2 10

10 -1

10 0

10 1 mA 10 2

Semiconductor Group Semiconductor Group

44

Sep-07-1998 1998-11-01