Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

Design Rules

Jan M. Rabaey

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

Cross-Section of CMOS Technology

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

Design Rules
Interface between designer and process engineer l Guidelines for constructing process masks l Unit dimension: Minimum line width scalable design rules: lambda parameter absolute dimensions (micron rules)
l

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

CMOS Process Layers


Layer Well (p,n) Active Area (n+,p+) Select (p+,n+) Polysilicon Metal1 Metal2 Contact To Poly Contact To Diffusion Via Color Yellow Green Green Red Blue Magenta Black Black Black Representation

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

Intra-Layer Design Rules


Same Potential 0 or 6 10 3 Active 3 2 Select Contact or Via Hole 2 2
Metal2

Different Potential 9 Polysilicon 2 Metal1 3


4

Well

3
Digital Integrated Circuits Design Rules Prentice Hall 1995

Transistor Layout
Transistor

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

Via s and Contacts


2 Via 1 1 5 Metal to 1 Active Contact Metal to Poly Contact 3 2 4

2 2

Digital Integrated Circuits

Design Rules

Prentice Hall 1995

Select Layer
2 3 2 1 3 3 Select

Substrate
Digital Integrated Circuits Design Rules

Well
Prentice Hall 1995

CMOS Inverter Layout


GND In V DD A A

Out (a) Layout

A p-substrate n
+

A n p
+

Field Oxide

(b) Cross-Section along A-A


Digital Integrated Circuits Design Rules Prentice Hall 1995

You might also like