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EEET 333 Nasir Ayub

Practice Question Design the circuit so that the transistor operate at ID = 0.4mA and VD = +0.5V. The NMOS transistor has Vt = 0.7V, nCox = 100A/V2, L=1m, and W = 32m. Neglect the channel length modulation effect (i.e. assume that = 0)

EEET 333 Nasir Ayub


Redesign the circuit for the following case: VDD = -VSS = 2.5V, Vt = 1V, nCox = 60A/V2, W/L = 120m, ID = 0.3mA, and VD = 0.4V

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