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Surface Fabrication:: A. Determining The Voltage Threshold of Dielectric Layer Breakdown
Surface Fabrication:: A. Determining The Voltage Threshold of Dielectric Layer Breakdown
Surface Fabrication:: A. Determining The Voltage Threshold of Dielectric Layer Breakdown
Chips are soft baked at 250C for 60 minutes. 3. Polyamide layer is scratched off on one edge, exposing silicone for electrode contact. EXPERIMENTAL METHODS: A. Determining the voltage threshold of dielectric layer breakdown 1. Droplet is applied to surface and electrodes attached. An image is captured with 0V applied and the contact angle is determined.
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2. Voltage is increased by ~100V intervals, and the change in contact angle of the droplet is observed.
3. When dielectric layer begins to break down, bubbles will begin to form within the droplet. The applied voltage at which this occurs is noted and the voltage is not increased any further.
Figure 4. Bubbles are seen forming within the droplet at an applied voltage of 300V.
B. Determining the time threshold of dielectric layer breakdown 1. Droplet is applied to surface and electrodes attached. A larger droplet (20-30 L) is preferred so as to prevent the droplet from evaporating too quickly. An image is captured with 0V applied and the contact angle is determined.
Figure 6. Using a larger droplet prevents the droplet from evaporating too quickly.
2. The applied voltage is increased to the desired level (a voltage of ~100V lower than the previously determined breakdown point is used as a starting point) and held constant. Images are captured at regular time intervals and examined for signs of dielectric layer breakdown.
Figure 10. 366V applied; 8 minutes elapsed. The droplet has almost completely evaporated.
3. If no dielectric breakdown is observed, a larger droplet is used and a higher voltage is applied.