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  • Electric Circuits and Electron Devices Unit Iv - Transistors Two Marks

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    Janani Munisamy
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    This document contains 26 questions about transistors, bipolar junction transistors (BJTs), field effect transistors (FETs), junction gate field effect transistors (JFETs), and metal-oxide-semiconductor field effect transistors (MOSFETs). The questions cover topics such as current amplification factors, the Early effect, transistor biasing, large signal current gain, thermal runaway, comparisons of BJTs and different types of FETs, pinch-off voltages, transconductance, applications, drain current equations, threshold voltages, transistor regions of operation, and classifications of MOSFETs.

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    This document contains 26 questions about transistors, bipolar junction transistors (BJTs), field effect transistors (FETs), junction gate field effect transistors (JFETs), and metal-oxide-semiconductor field effect transistors (MOSFETs). The questions cover topics such as current amplification factors, the Early effect, transistor biasing, large signal current gain, thermal runaway, comparisons of BJTs and different types of FETs, pinch-off voltages, transconductance, applications, drain current equations, threshold voltages, transistor regions of operation, and classifications of MOSFETs.

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    29 views2 pages

    Electric Circuits and Electron Devices Unit Iv - Transistors Two Marks

    Uploaded by

    Janani Munisamy
    This document contains 26 questions about transistors, bipolar junction transistors (BJTs), field effect transistors (FETs), junction gate field effect transistors (JFETs), and metal-oxide-semiconductor field effect transistors (MOSFETs). The questions cover topics such as current amplification factors, the Early effect, transistor biasing, large signal current gain, thermal runaway, comparisons of BJTs and different types of FETs, pinch-off voltages, transconductance, applications, drain current equations, threshold voltages, transistor regions of operation, and classifications of MOSFETs.

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    Attribution Non-Commercial (BY-NC)
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    EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES

    UNIT IV TRANSISTORS TWO MARKS 1. Define current amplification factor for CB and CE configuration. 2. What is Early effect in CB configuration and give its consequences. 3. Why collector region of a transistor is larger in area than emitter region? 4. In order to operate a transistor in the active region, what kind of biasing is given to the junctions? 5. What is large signal current gain? 6. What is thermal runaway? 7. Compare BJT and FET. 8. Distinguish clearly the difference N with P channel FETs. 9. What is pinch off voltage of a JFET? 10. When a FET acts as a voltage variable resistor? 11. Mention the advantages of MOSFET over JFET. 12. Differentiate between enhancement type and depletion type MOSFET. 13. Compare any four salient features of BJT with JFET. 14. Mention the disadvantage of JFET compared to BJT. 15. What is transconductance of JFET? 16. List the applications of BJT and FET. 17. Give the drain current equation for JFET. 18. State the advantages of FET over BJT. 19. Compare BJT and MOSFET. 20. Draw the symbol for N channel and P channel MOSFET. 21. What is the threshold voltage in enhancement MOSFET? 22. Compare N channel MOSFET and P channel MOSFET. 23. What is Transistor and write the regions of operation. 24. What is breakdown in transistor?

    25. Write the classification of MOSFET. 26. Why CE configuration is considered to be most versatile one?

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