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Transistor A1015 GR
Transistor A1015 GR
FEATURES
Power Dissipation
G H
TO-92
CLASSIFICATION OF hFE
Product-Rank Range A1015-O 70~140 A1015-Y 120~240 A1015-GR 200~400
K
A B
Collector
2 3
Base
1
Emitter
Symbol
VCBO VCEO VEBO IC PD TJ, TSTG
Rating
-50 -50 -5 -150 400 125, -55~125
Unit
V V V mA mW C
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob NF
Min.
-50 -50 -5 70 80 -
Typ.
-
Max.
-0.1 -0.1 -0.1 400 -0.3 -1.1 7 6
Unit
V V V A A A V V MHz pF dB
Test Conditions
IC= -100A, IE=0 IC= -0.1mA, IB=0 IE= -100A, IC=0 VCB= -50V, IE=0 VCE= -50V, IB=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -1mA, f=30MHz VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA, f=1KHz, RG=10K
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
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A1015
Elektronische Bauelemente -0.15A , -50V PNP Plastic-Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Page 2 of 2