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SolidStateElectronics

2
nd
yearCommunications
Sheet2
Dr.NaderShehata
Schrodingerequationapplications:
1 Intunnelingthroughapotentialbarrierproblem,calculatea)theprobabilityofanelectron
tunnelingthroughapotentialbarrier.Consideranelectronofanenergy2eVimpingingona
potentialbarrierwithV
o
=20eVandawidthof3A.Ifyouhaveamillionimpingingelectrons
howmanywillmanagetopenetratethebarrier?

2 Aprotonattemptstopenetratearectangularpotentialbarrierofheight10MeVandthickness
10
14
m.Theparticlehasanenergyof3MeV.Calculatetheprobabilitythattheprotonwill
penetratethepotentialbarrier.

3 Considerasinglebarrierbutnowforenergieslargerthanthebarrierheight,i.e.E>V
o
.The
formulaforT(E)canbeobtainedbyreplacingk
2
byik
2
intheexactformulaoftunneling;one
thenobtains:

Atagivenincidentenergy(givenEorgivenk)showforwhichcondition(ofk
2
andL)the
transmissioncoefficienthasmaxima(T(E)=1,socalledtotaltransmission)?

Crystallinestructure:
1 ThelatticeconstantofGaAsis5.66A.Determinethenumberofatoms(GaandAs)percm3.
2 Silatticeconstantis5.43A.Calculatea)thedistancefromthecenterofonesiliconatomtothe
centerofitsnearestneighbor,b)thedensityofsiliconatomspercm3,andc)themassdensity
(gramspercm3)ofsilicon.Showthecalculations.
3 Considerasimplecubiclatticewithlatticeconstanta.Sketchtheplanes(310)and(230).

1
2
2
2
2
2
2
2
) ( sin
2
1 ) (

(
(

|
|
.
|

\
|

+ = L k
kk
k k
E T

4 ForasimplecubiclatticedeterminetheMillerindicesfortheplaneshowninthefigurebelow.

5 Thelatticeconstantofasimplecubiccellis4.50A.Calculatethedistancebetweenthenearest
planesa)(100),b)(110)andc)(111).
6 Determinethesurfacedensityofatomsforsilicononthe(100)plane.
7 FindAPFofSCandBCCcrystals.

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