TCRT5000(L)

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

Description
The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 mm. The detector consists of a phototransistor.

Applications
D Position sensor for shaft encoder D Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.

D Limit switch for mechanical motions in VCR D General purpose wherever the space is limited
15116

94 9442

Features
D Snap-in construction for PCB mounting D Package height: 7 mm D Plastic polycarbonate housing construction
which prevents crosstalk
C A

D L = long leads D Current Transfer Ratio (CTR) of typical 10%

Top view

Order Instruction
Ordering Code TCRT5000 TCRT5000(L) Sensing Distance 12 mm 12 mm Remarks Leads (3.5 mm) Long leads (15 mm)

Document Number 83760 Rev. A4, 03Jul00

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TCRT5000(L)
Vishay Semiconductors Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 100 Unit V mA A mW C

tp 10 mA Tamb 25C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 70 5 100 100 100 Unit V V mA mW C

Tamb 55C

Sensor
Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 200 25 to +85 25 to +100 260 Unit mW C C C

2 mm from case, t 10 s

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Document Number 83760 Rev. A4, 03Jul00

TCRT5000(L)
Vishay Semiconductors Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA

10

200

Sensor
Parameter Collector current Test Conditions VCE = 5 V, IF = 10 mA, D = 12 mm IF = 10 mA, IC = 0.1 mA, D = 12 mm Symbol IC 1,2) Min. 0.5 Typ. 1 Max. 2.1 0.4 Unit mA V

Collector emitter VCEsat 1,2) saturation voltage 1) See test circuit 2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)

94 9226

IF

IC VCC A

Flat Mirror = 22.5 mm Rem. 2

96 12314

d = working distance D = Distance 12 0.2

7.0 0.2 = package height

Figure 1. Test circuit

Figure 2. Test circuit

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TCRT5000(L)
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) 10.000 VCE=5V IC Collector Current ( mA ) Coupled device 200 1.000

0.100

Phototransistor 100 IR-diode

0.010

0 0
95 11071

25

50

75

100

0.001 0.1
96 11763

1.0

10.0

100.0

Tamb Ambient Temperature ( C )

IF Forward Current ( mA )

Figure 3. Total Power Dissipation vs. Ambient Temperature

1000.0

Figure 6. Collector Current vs. Forward Current

10.00 IC Collector Current ( mA ) IF=50mA 20mA 1.00 10mA 5mA 0.10 2mA 1mA

I F Forward Current ( mA )

100.0

10.0

1.0

0.1 0
96 11862

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )

0.01 0.1
96 11764

1.0

10.0

100.0

VCE Collector Emitter Voltage ( V )

Figure 4. Forward Current vs. Forward Voltage

Figure 7. Collector Emitter Saturation Voltage vs. Collector Current

100.0 CTR Current Transfer Ratio ( % )

CTR rel Relative Current Transfer Ratio

1.2 1.1 1.0 0.9 0.8 0.7 0.6 302010 0 10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( C ) VCE=5V IF=20mA

VCE=5V

10.0

1.0

0.1 0.1
96 11765

1.0

10.0

100.0

96 11762

IF Forward Current ( mA )

Figure 5. Rel. Current Transfer Ratio vs. Ambient Temp.

Figure 8. Current Transfer Ratio vs. Forward Current

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Document Number 83760 Rev. A4, 03Jul00

TCRT5000(L)
Vishay Semiconductors
1.2 I Crel Relative Collector Current 1.0 0.8 0.6 0.4 0.2 0 0
96 11766

VCE=10V IC=20mA

10

12

14

16

d Working Distance ( mm )

Figure 9. Relative Collector vs. Distance

Top view
Figure 10. Footprint

96 12371

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TCRT5000(L)
Vishay Semiconductors Dimensions of TCRT5000 in mm

96 12073

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Document Number 83760 Rev. A4, 03Jul00

TCRT5000(L)
Vishay Semiconductors Dimensions of TCRT5000L in mm

95 11267

Document Number 83760 Rev. A4, 03Jul00

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TCRT5000(L)
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Document Number 83760 Rev. A4, 03Jul00

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