PhlatLight UV Preliminary Data Sheet September 1, 2008

NOTES
Irradiance is reported for measurement at the chip
surface. Irradiance at the work surface will dependent on
the system optical design

Shorter wavelength and higher power devices are under
development

Data are reported for CW operation at a 40C heat sink
temperature. Proper thermal management is required for
proper operation of the device
PHLATLIGHT UV High Power LEDs

PRELIMINARY DATA- CONTACT AVNET LIGHTSPEED FOR MORE INFORMATION

Very high UV flux from a large monolithic chip
Photonic lattice technology for high efficiency and
high power operation
Higher Irradiance than small chip or conventional
packaged lamp arrays
Instant On/Off
ROHS Compliant packaging
Ultra-low thermal resistance package


SUMMARY TABLE

380 nm 400 nm
A 12 18
V
W 1.2 6
W/cm
2
10 50
nm
Forward Voltage
Radiant Power
4.3
15
Wavelength
Parameter Unit
FWHM
Irradiance*
Drive Current

Electro-optical Characteristics
* at the chip surface
(Curves are shown for 400 nm devices)

Caution: High Intensity UV Radiation. Avoid Eye Exposure to Direct
or Scattered Radiation. Use Appropriate Eye Protection
0
1
2
3
4
5
6
0 5 10 15 20 25 30
Current (A) F
o
r
w
a
r
d

V
o
l
t
a
g
e

(
V
)
0
2
4
6
8
10
0 5 10 15 20 25 30
Current (A)
O
p
t
i
c
a
l

P
o
w
e
r

(
W
)
0
0.2
0.4
0.6
0.8
1
-100 -50 0 50 100
angle
I
n
t
e
n
s
i
t
y

(
A
U
)
0
0.2
0.4
0.6
0.8
1
350 370 390 410 430 450
Wavelength, nm
N
o
r
m
a
l
i
z
e
d

P
o
w
e
r

PRELIMINARY DATA- CONTACT AVNET LIGHTSPEED FOR MORE INFORMATION


PhlatLight UV Preliminary Data Sheet September 1, 2008
THERMAL CHARACTERISTICS

PhlatLight UV LED packages have ultra-low thermal resistance which ensures reliable long term operation at very high input
power levels. The thermal resistance from J unction to Heatsink is shown in the following table.

Thermal Resistance
(C/W)
Maximum J unction
Temperature (C)
0.60 130

MECHANICAL CHARACTERISTICS
Caution: High Intensity UV Radiation. Avoid Eye Exposure to Direct
or Scattered Radiation. Use Appropriate Eye Protection