2009

Product Catalog

Discrete Semiconductors

MOSFETs

MOSFETs
ROHM offers a wide selection of MOSFETs, ranging from ultra-low
ON-resistance products utilizing micro-process technology, high
efficiency/breakdown units for switching applications, and high
power components optimized for commercial/industrial systems.

01

MOSFETs

Contents
Close Up

MOSFET Lineup

ECOMOSTM Series

Low energy consumption series optimized for

portable equipment.

High-speed Switching
High Voltage Resistance MOSFETs

This high performance, high speed switching series reduces switching

loss by 30% compared to conventional products. (500V to 600V Class)

TCPT3 Package MOSFETs

Higher current-handling capability in the same mounting

area as CPT3 products.

MOSFETs for LED Backlight / Motor Drive

10

VDSS=45V/60V products optimized for next-generation

LED backlights and 24V input motor circuits.

Standard
MOSFET Lineup

11

Internal Circuitry

16

Dimensions

17

MOSFETs

02

Discrete Semiconductors

MOSFET Lineup

Close Up

ECOMOS TM Series
Drive
Voltage VDSS
(V)

(V)

ID (A)
0.2 / 0.3

1 / 1.3

1.5 / 2

2.4 / 2.5

Package Page
3 / 3.5

4 / 4.5

5/6/7

RUM002N02(N)

VMT3

RZM002P02(P)

1.2

20

RUE002N02(N)

EMT3

RZE002P02(P)
RZF013P01(P)

RZL025P01(P)
RZR020P01(P)
RW1A013ZP(P)

12

TUMT6

RZL035P01(P)

WEMT6 P.6

RW1A020ZP(P)
RZQ045P01(P)

Single Type

TSMT3

RZR040P01(P)

RZR025P01(P)

RT1A040ZP(P)

RZQ050P01(P)
RT1A050ZP(P)
RQ1A060ZP(P)

1.5

RQ1A070ZP(P)
RUF020N02(N)

TSST8
TSMT8

TUMT6
TSMT3

RUR040N02(N)

RUR020N02(N)

TSMT6 P.5
P.6

TUMT3

RUF025N02(N)
RUL035N02(N)

RUQ050N02(N)

20

P.5

TUMT3

RZF030P01(P)

RZF020P01(P)

RW1C015UN(N)

P.5

TSMT6
WEMT6 P.6

RW1C020UN(N)

VMT3

RUM003N02(N)

1.8

EMT3

RUE003N02(N)

P.5

TUMT3

RUF015N02(N)
EM6K7(N+N)

1.2

20

EMT6

EM6J1(P+P)

P.5

EM6M2(P+N)

TUMT6

Dual Type

US6J11(P+P)

TSMT6

QS6J11(P+P)

12
1.5

QS8J1(P+P)

20

TT8J21(P+P)
US6M11(P+N)

12 / 20
1.8

Built-in Diode
03

12

MOSFETs

TSMT8 P.6
TSST8
TUMT6

US6K4(N+N)

20

P.5

EMT6

EM6K6(N+N)

1.5

TSST8

TT8J1(P+P)

ES6U1(P)

WEMT6 P.6

ES6U2(N)

20

TT8U1(P)
QS5U34(N)

QS5U36(N)

TSST8
TSMT5 P.5

Discrete Semiconductors

MPT6 Package Dual MOSFETs

Drive
Voltage VDSS

ID (A)

(V)

(V)

4/5

6/7

8/9

400

10 / 11

12 / 13

15 / 16

18 / 19

20 / 21 / 25

Package Page
CPT3

R4008AND(N)
R5007ANJ(N)

R5009ANJ(N)

R5011ANJ(N)

R5013ANJ(N)

R5016ANJ(N)

R5019ANJ(N)

R5021ANJ(N)

LPT

R5007ANX(N)

R5009ANX(N)

R5011ANX(N)

R5013ANX(N)

R5016ANX(N)

R5019ANX(N)

R5021ANX(N)

TO-220FM

500
R5005CNX(N)

525 R5205CND(N) R5207AND(N)

CPT3

10

P.7
R6004AND(N)

CPT3

R6006AND(N)
R6012ANJ(N)

R6015ANJ(N)

R6018ANJ(N)

R6020ANJ(N)

LPT

R6012ANX(N)

R6015ANX(N)

R6018ANX(N)

R6020ANX(N)

TO-220FM

R6025ANZ(N)

TO-3PF

600
R6008ANX(N)

R6010ANX(N)

Under development

TCPT3 Package MOSFETs

Drive Voltage

VDSS

(V)

(V)

15 / 16

18 / 19

ID (A)
20 / 21 / 22 / 25

30

40

Package

Page

TCPT3

P.9

RSY300N04(N)

4
45

RSY160P05(P)

RSY200N05(N)

MOSFETs for LED Backlight / Motor Drive

Drive
Voltage VDSS
(V) (V)

ID (A)
0.2

1 / 1.5

2 / 2.5

3 / 3.5

4.5

6 / 6.5

8 / 8.5

9.5

Package Page
TUMT6

RJL002N06(N)

TSMT3

RTR030N05(N)

2.5

Single Type

45

RTR025N05(N)
RTR020N05(N)

TSMT3

RTQ020N05(N)

TSMT6
RSS060P05 RSS070N05(N) RSS085N05(N) RSS095N05
(P)
(N)
RSS070P05(P) RSS080N05(N)

SOP8
TSMT3 P.10

RSR020N06(N) RSR030N06(N)

4
60

TSMT6

RSQ015N06(N)

Dual Type

RSS065N06
(N)

2.5

SOP8
TSMT6

QS6K21(N+N)

45
SP8K22
(N+N)

SP8K23
(N+N)

SP8K32
(N+N)

SP8K33
(N+N)

SP8K24
(N+N)

SOP8

4
60

SP8K31
(N+N)

SOP8

MOSFETs

04

Discrete Semiconductors

ECOMOSTM Series
Significantly reduced power
consumption
Summary

Features

New low voltage drive processes

enable operation from VGS=1.2V
to 1.8V.

Applications

Low voltage drive

Low ON-resistance

General load switches,

LED drives, muting circuits,
DC/DC converters,
switches for charger control,
and more.

A new low-voltage drive process ensures stable

operation at VGS = 1.2V. ON-resistance is also
significantly reduced compared to conventional
2.5V products, resulting in 20 to 90% less power
consumption when ON.

ON-resistance : RDS(on) (W)

<ON-resistance Comparison>

Stable low voltage drive

10
9

Conventional Product
(2.5V Drive)

8
7
6

90%

Down

ECOMOSTM
(1.2V Drive)

3
2
1
0

Drive Voltage : VGS(V)

Circuit Examples
LED Driver

Load Switch Drive

DC/DC Converter

Muting Circuit

Charger Control Switch

Battery

Lineup
Package

VMT3

PD(W) Polarity

0.15

Nch
Pch

Part No.

0.15

20

0.2 1.6 1 0.8

RUM003N02

20

0.3

RZM002P02

RUE003N02

Nch+Nch

RZE002P02
EM6K7
EM6K6

20 0.2 2.4
20

0.2 1.6

20

0.3

1
1
2

20 0.2 2.4
20

0.2 1.6

1
1
2

1.8

1.2

0.8

0.1

1.2

0.8

0.7

1.8

0.8

1.2

0.8

0.7

1.2

0.8

0.7

1.8

0.8

1.2

0.7
0.8

1.2
1.2

170

130

1.8

170

95

75

1.5

80

49

39

1.5

RZF013P01

12 1.3 530

280

190

1.5

RZF020P01

12

200

105

75

1.5

RZF030P01

12

72

39

28

1.5

20

0.3

Nch+Pch

EM6M2

20 0.3 1.6 1 0.8

20 0.2 2.4 1 1

Pch

1.2

0.8

20 0.2 2.4

0.8

Drive Internal
Voltage Circuit
(V)

EM6J1

Nch

0.1

12 0.8 0.7

0.15 Pch+Pch

RUF015N02

TUMT3

RDS(on) Typ.(m)
VGS=1.5V VGS=2.5V VGS=4.5V

Nch
Pch

EMT6

ID
(A)

RUM002N02

RUE002N02
EMT3

VDSS
(V)

20

1.5 220

RUF020N02

20

RUF025N02

20

2.5

Note : Please see p.16 for the internal circuitry

Package

PD(W)

Polarity
Nch
Pch

TUMT6

66

38

31

1.5

RZL025P01

12 2.5 110

60

44

1.5

RZL035P01

12 3.5

66

36

26

1.5

170

130

1.8

RUL035N02

20 3.5

Pch+Pch

US6J11

12 1.3 530

280

190

1.5

Nch+Pch

US6M11

20 1.5 300

170

130

1.5

12 1.3 530

280

190

1.5

1.25
Nch+SBD0.7A

Nch
1.25

20

170

95

75

1.5

RUR040N02

20

55

33

25

1.5

RZR020P01

12 2

200

105

75

1.5

RZR025P01

12 2.5 110

60

44

1.5

RZR040P01

12 4

55

30

22

1.5

20 1.5 220 2

170

130

1.8

QS5U36

20 2.5 120

74

58

1.5

RUQ050N02

20

40

27

22

QS5U34

1.5

RZQ045P01

12 4.5

50

31

25

1.5

RZQ050P01

12 5

44

26

19

1.5

QS6J11

12 2

200

105

75

1.5

Pch
Pch+Pch

MOSFETs

RUR020N02

1 VGS=1.2V

05

Drive
Voltage Internal
(V) Circuit

20 1.5 220

Nch+SBD0.5A

TSMT6

RDS(on) Typ.(m)
VGS=1.5V VGS=2.5V VGS=4.5V

US6K4

Pch

TSMT5

VDSS ID
(V) (A)

Nch+Nch

Nch
TSMT3

Part No.

2 VGS=1.8V

3 VGS=4V

Discrete Semiconductors

ECOMOSTM WEMT6 / TSST8 / TSMT8 Package

Lower ON-resistance in compact,
high power packages
Features

Summary
TM

The ECOMOS series integrates

high power in a number of compact,
low profile package types.

WEMT6

PD0.7W

TSST8

TSMT8

1.61.60.6mm

PD1.25W

190m Typ. (at 4.5V)

ES6U1(Nch+SBD 0.5A)

Identical performance in a thinner,

smaller package

30

40

thinner

Smaller

PD1.5W

3.01.90.8mm

8m Typ. (at 4.5V)

RT1A050ZP

RQ1A070ZP

RDS (on)

RDS (on)

60 lower

80 lower

TUMT6

50m

Typ. (at 4.5V)

US5U1(Nch+SBD 0.5A)

3.02.80.8mm

19m Typ. (at 4.5V)

TUMT5

170m

Small, thin, high power

Reduced surface mount area

TSMT6

35m

Typ. (at 4.5V)

RTL030P02

Typ. (at 4.5V)

RTQ040P02

Lineup
Package

PD(W)

Polarity
Nch

WEMT6

0.7

Nch+SBD0.5A
Pch
Pch+SBD0.5A
Pch

TSST8

1.25
Pch+Pch
Pch+SBD
1A

TSMT8

1.5

Pch
Pch+Pch

Part No.

VDSS(V)

ID(A)

RDS(on) Typ.(m)
VGS=1.5V

VGS=2.5V

VGS=4.5V

Drive Internal
Voltage Circuit
(V)

RW1C015UN

20

1.5

300

170

130

1.5

RW1C020UN

20

170

95

75

1.5

ES6U2

20

1.5

300

170

130

1.5

12

1.3

530

280

190

1.5

RW1A013ZP

RW1A020ZP

12

200

105

75

1.5

ES6U1

12

530

280

190

1.5

RT1A040ZP

12

55

30

22

1.5

RT1A050ZP

12

48

26

19

1.5

TT8J1

12

2.5

110

60

44

1.5

TT8J21

20

2.5

140

68

49

1.5

TT8U1

20

2.4

180

105

80

1.5

RQ1A060ZP

12

39

22

16

1.5

RQ1A070ZP

12

19

11

1.5

QS8J1

12

4.5

48

28

21

1.5

Note : Please see p.16 for the internal circuitry

MOSFETs

06

Discrete Semiconductors

High-speed Switching High Voltage Resistance MOSFETs

Lower switching loss
Summary

Features

This high-performance series was

developed using a new high voltage
resistance process that enables fast
switching and low ON-resistance.

High-speed switching (Low switching loss)

Applications

High-speed switching
(Low Qg)
Low ON-resistance

Switching power supplies

Lighting

RDS (on) Qg Comparison

RDS (on) Qg (nC)

30

New high voltage resistance processes ensure low ON-resistance and low
Qg, with an RDS(on) x Qg value 50% less than conventional products. The
result is dramatically improved switching speed (up to 30%) with less
switching loss. The lineup is available in two different power packages,
TO-220FM and LPT, featuring lower heat emission.

25

Conventional product
Product
RDX series
RDS (on) Qg comparison
50% reduction

20
15

R4 to R6 series

10
5
450

Qg Comparison

550
VDSS (V)

600

Switching Speed Comparison (OFF)

300

R4 to R6 series

500

250

Qg reduced 40%

ID

VDS

200
150

[V]
Convensional
product

100
50
0
-50
-100

200ns

-150

4
3.5
3
2.5
2
1.5 [A]
1
0.5
0
-0.5
-1

300

Speed
30%
faster

250

ID

VDS

200
150
100

[V]

50
0
-50

-100
-150

140ns

R4 to R6 series

Conventional Product

Circuit Examples
Switching power supply circuit (Primary)

Ballast circuit

ROHM MOSFETs are ideal for use in the PFC

block, requiring low ON-resistance, and in
switching (SW) circuits, where switching speed is

IC

of critical importance. Also suitable for ballast

IC
IC

circuits in lighting devices.

PFC

07

MOSFETs

SW

4
3.5
3
2.5
2
1.5 [A]
1
0.5
0
-0.5
-1

Discrete Semiconductors

Lineup
Package

PD(W)

Polarity

20

Nch

CPT3
40

RDS(on) Typ.()
VGS=10V

Qg(nC)
VGS=10V

VDSS(V)

ID(A)

R4008AND

400

0.73

R5205CND

525

1.3

R5207AND

525

0.78

13

R6004CND

600

1.5

10

R6006AND

600

0.9

15

Part No.

15
9.5

Nch

40

Nch

R5007ANJ

500

0.8

13

50

Nch

R5009ANJ

500

0.55

21

75

Nch

R5011ANJ

500

11

0.38

30

R5013ANJ

500

13

0.29

35

R5016ANJ

500

16

0.21

50

R5019ANJ

500

19

0.18

52

R5021ANJ

500

21

0.17

64

R6012ANJ

600

12

0.32

35

R6015ANJ

600

15

0.23

60

R6018ANJ

600

18

0.21

53

R6020ANJ

600

20

0.19

65

R5007ANX

500

0.8

13

R5005CNX

500

1.3

R5009ANX

500

0.55

21

R5011ANX

500

11

0.38

30

R5013ANX

500

13

0.29

35

R5016ANX

500

16

0.21

50

R5019ANX

500

19

0.18

52

R5021ANX

500

21

0.16

64

R6008ANX

600

0.6

21

R6010ANX

600

10

0.43

25

R6012ANX

600

12

0.32

35

R6015ANX

600

15

0.23

50

R6018ANX

600

18

0.21

53

R6020ANX

600

20

0.17

65

R6025ANZ

600

25

0.12

85

LPT

100

40

Nch

Nch

9.5

TO-220FM
50

TO-3PF

150

Nch

Nch

Under development

MOSFETs

08

Discrete Semiconductors

TCPT3 Package MOSFETs

Reduces heat generation
in a variety of circuits,
including LCD backlight inverters
Summary

Features

Higher current in the same footprint.

Thin, high power package

Improved heat radiation characteristics
enables higher current intake in the same
mounting area as conventional CPT3
package types.

Application

Thin package
High power

CPT3

TCPT3

6.5

6.6

LCD backlight inverters

Motor drive circuits

TCPT3
Back side

9.5

9.5

Higher current

2.0

2.3

14%
Thinner

(Unit:mm)

Circuit Examples

LCD backlight inverter circuit

Motor drive circuit

24VIN

trans

CCFL / EEFL

Control

Controlling heat emission is

a major challenge with large
LCDs. ROHM s high power
TCPT3 package helps improve
heat dissipation in backlight
inverter circuits.

<Half bridge>

<Full bridge>

<3-phase motor control>

Lineup
Package

PD(W)

Polarity

Part No.

VDSS(V)

ID(A)

RDS(on) Typ.(m)
VGS=4V

VGS=4.5V

VGS=10V

Qg(nC)
VGS=5V

RSY300N04

40

30

11

10

24

RSY200N05

45

20

28

25

20

12

RSY160P05

45

16

50

45

35

17

Nch
TCPT3

20
Pch

09

MOSFETs

Discrete Semiconductors

MOSFETs for LED Backlight Motor Drives

45/60V (VDSS) Series
Summary

Features

ROHM VDSS=45V/60V products are

optimized for next-generation LED
backlighting applications and 24V
input motor circuits.

Broad lineup

Application

Low ON-resistance

TSMT3

TSMT6

1.0W

1.25W

LED backlight circuits

Motor drive circuits

SOP8
2.0W
5.0

1.0Max.

6.0

3.9

1.6

2.8

1.6

A wide lineup of products are available in multiple configurations and

package types (i.e. VDSS=45/60V, Pch/Nch, Single/Dual, TSMT3/6/SOP8).

2.8

2.9

2.9

1.0Max.

Unit:mm

1.75

Circuit Examples

LED backlight circuit

VIN

Motor drive circuit

M

Control
IC

DC / DC
IC

LED
Controller

<Full bridge>

<Half bridge>

Lineup
Package

PD(W)

Polarity

TUMT6

1.0

Nch
Nch
Nch

TSMT3

TSMT6

SOP8

1.0

1.25

2.0

Part No.

RDS(on) Typ.(m)

Qg(nc)
VGS=5V

Internal
Circuit

VDSS(V)

ID(A)

RJL002N06

45

0.2

2.2

1.7

1.6

RTR030N05

45

3.0

65

50

45

6.2

RTR025N05

45

2.5

125

95

90

3.2

Nch

RTR020N05

45

2.0

180

135

130

2.9

Nch
Nch
Nch
Nch
Nch+Nch
Nch
Nch
Nch
Nch
Nch

RTQ020N05

45

2.0

200

150

140

2.3

RSR030N06

60

3.0

75

70

60

RSR020N06

60

2.0

150

140

120

2.7

RSQ015N06

60

1.5

275

260

230

QS6K21

45

1.0

415

310

300

1.5

RSS095N05

45

9.5

15

14

11

18.9

RSS085N05

45

8.5

18

16

13

15.3

RSS080N05

45

8.5

20

18

15

13

RSS070N05

45

7.0

25

23

18

12

RSS065N06

60

6.5

31

28

24

11

Nch+Nch

SP8K24

45

6.0

26

24

18

15.4

Nch+Nch

SP8K23

45

5.0

36

33

26

8.6

Nch+Nch

SP8K22

45

4.5

46

41

33

6.8

Nch+Nch

SP8K33

60

5.0

40

38

34

Nch+Nch

SP8K32

60

4.5

55

52

46

Nch+Nch

SP8K31

60

3.5

105

100

85

3.7

VGS=2.5V VGS=4.0V VGS=4.5V VGS=10V

Pch

RSS070P05

45

7.0

28

25

19

34

Pch

RSS060P05

45

6.0

38

35

26

23

Note : Please see p.16 for the internal cirtuitry

1=VGS=4.5V

MOSFETs

10

Discrete Semiconductors

MOSFET Lineup

Standard

Small signal MOSFETs

Package

PD(W)

Polarity
Nch

VMT3

0.15

Part No.

RDS(on) Typ.()
VGS=4V VGS=4.5V

VDSS(V)

ID(A)

30

0.1

RTM002P02

20

0.2

2.0

1.1

1.0

RSM002P03

30

0.2

1.6

1.4

0.9

30

0.1

RTE002P02

20

0.2

2.0

1.1

1.0

RSE002P03

30

0.2

1.6

1.4

0.9

2SK3541

VGS=2.5V

VGS=10V

Pch
Nch
EMT3

0.15

2SK3019

Pch
EMT5

EMT6

0.15

Nch+Nch

EM5K5

30

0.3

0.8

0.7

0.6

Nch+Nch

EM6K1

30

0.1

Nch+Pch

EM6M1

30

0.1

20

0.2

1.1

2SK3018

30

0.1

RJU003N03

30

0.3

1.4

0.9

0.8

RHU003N03

30

0.3

1.4

1.2

0.8

RJU002N06

60

0.2

2.2

1.7

1.6

RHU002N06

60

0.2

2.8

1.7

RTU002P02

20

0.25

2.0

1.1

1.0

RSU002P03

30

0.25

1.6

1.4

0.9

0.15

Nch
UMT3

0.2

Pch
UMT5

0.15

UMT6

0.15

SST3

SMT3

SMT6

0.2

0.2

0.2

Nch+Nch

UM5K1N

30

0.1

Nch+Nch

UM6K1N

30

0.1

Pch+Pch

UM6J1N

30

0.2

1.6

1.4

7.5 Max.

Nch

Nch

Nch+Nch

0.9

RK7002

60

0.115

7.5 Max.

RK7002A

60

0.3

1.1

0.7

2SK2731

30

0.2

2.8

1.5

RJK005N03

30

0.5

0.65

0.42

0.40

RHK005N03

30

0.5

0.6

0.51

0.35

RHK003N06

60

0.3

1.1

0.7

SM6K2

60

0.2

2.8

1.7
VGS=5V

11

MOSFETs

Discrete Semiconductors

Middle Power MOSFETs

Package PD(W)
WEMT6

0.7

Polarity
Nch
Nch+SBD(0.5A)
Nch

TUMT3

0.8
Pch

Nch+SBD(0.7A)
Nch+SBD(0.5A)
TUMT5

Pch+SBD(0.5A)
Pch+SBD(0.7A)
Pch+SBD(0.1A)
Nch
Nch+Nch
Nch+SBD(0.7A)

TUMT6

Pch
Pch+Pch

Part No.
RW1E014SN
ES6U3
RTF015N03
RTF025N03
RSF014N03
RTF010P02
RTF015P02
RTF020P02
RSF010P03
US5U3
US5U1
US5U2
US5U30
US5U38
US5U35
RTL035N03
US6K1
US6K2
US6U37
RTL020P02
RTL030P02
RSL020P03
US6J2
US6M2

Nch+Pch
US6M1

Pch+Pch
Nch+Nch

RTR025N03
RTR040N03
RRR035N03
RSR025N03
RTR030N05
RTR025N05
RTR020N05
RSR030N06
RSR020N06
RTR011P02
RTR020P02
RTR025P02
RTR030P02
RRR030P03
RSR025P03
RSR020P03
RSR015P03
TT8J2
TT8K2

Pch+Nch

TT8M2

Nch+Nch

QS5K2
QS5U12
QS5U17
QS5U13
QS5U16
QS5U28
QS5U21
QS5U27
QS5U33
QS5U23
QS5U26

Nch

TSMT3

Pch

TSST8

1.25

Nch+SBD(1A)
Nch+SBD(0.5A)
TSMT5

1.25
Pch+SBD(1A)

Pch+SBD(0.5A)

1
1
2
2
3
3
4
4

VDSS(V)

ID(A)

30
30
30
30
30
20
20
20
30
30
30
30
20
20
45
30
30
30
30
20
20
30
20
30
20
30
20
30
30
30
30
45
45
45
60
60
20
20
20
20
30
30
30
30
30
30
30
20
30
30
30
30
30
20
20
20
30
20
20

1.4
1.4
1.5
2.5
1.4
1
1.5
2
1
1.5
1.5
1.4
1
1
0.7
3.5
1.5
1.4
1.5
2
3
2
1
1.5
1
1.4
1
2.5
4
3.5
2.5
3
2.5
2
3
2
1.1
2
2.5
3
3
2.5
2
1.5
2.5
2.5
2.5
2.5
2
2
2
2
2
2
1.5
1.5
2
1.5
1.5

VGS=2.5V

240
70

570
180
120

240
240

570
570

56
240

240
180
90

570
240
570

570
95
47

68
125
180

570
180
115
90

95
95
68
110
110
110
110
110
175
260
260

260
260

RDS(on) Typ.(m)
VGS=4V VGS=4.5V
270
250
270
250
180
170
50
48
270
250
310
280
110
100
65
60
450
400
180
170
180
170
270
250
310
280
310
280
1000
900
42
40
180
170
270
250
180
170
110
100
55
50
140
125
310
280
180
170
310
280
270
250
310
280
70
66
36
34
65
60
83
74
53
48
100
95
135
130
75
70
150
140
310
280
110
100
75
70
60
55
95
85
115
100
150
135
320
270
115
95
70
65
70
65

49
76
71
76
71
76
71
76
71
76
71
97
90
180
160
180
160
160
145
180
160
180
160

Qg(nC)
VGS=10V VGS=4.5V
170
1.4
170
1.4

1.6

3.7
170
1.4

2.1

5.2

7
250
1.9
1.6

1.6
1.4
170

2.1

2.1
600
1.7

4.6

1.6
170
1.4

1.6

4.9

8
80
3.9

2.1

1.6

2.1
170
1.4

2.1

3.3

5.9
45
4.5
50
2.9

6.2

3.2

2.9
60
5
120
2.7

4.9

9.3
55
5.2
70
5.4
85
4.3
170
2.6
60
4.8

3.2

3.2

12

2.8
2.8

2.8

2.8

2.8

4.8

4.2

4.2
3.4
95
4.2

4.2

1,2,3,4Please note that, although the internal circuit configuration may differ between part numbers, the electrical specifications remain the same.

VGS=5V

MOSFETs

12

Discrete Semiconductors

Middle Power MOSFETs

Package

PD(W)

Polarity

Nch

Nch+Nch

TSMT6

1.25
Pch

Pch+Pch

Part No.
RTQ020N03
RTQ035N03
RTQ045N03
RSQ045N03
RRQ035N03
RSQ035N03
RSQ020N03
RTQ020N05
RVQ040N05
RSQ015N06
QS6K1
RTQ025P02
RTQ030P02
RTQ035P02
RTQ040P02
RSQ025P03
RRQ030P03
RSQ030P03
RSQ035P03
QS6J1
QS6J3
QS6M3

Nch+Pch
QS6M4
Pch+SBD(0.5A)

MPT3

1
2.0

Nch

QS6U22
QS6U24
RHP030N03
RJP020N06
RHP020N06

VDSS(V)
30
30
30
30
30
30
30
45
45
60
30
20
20
20
20
30
30
30
30
20
20
30
20
30
20
20
30
30
60
60

ID(A)
2
3.5
4.5
4.5
3.5
3.5
2
2
4
1.5
1
2.5
3
3.5
4
2.5
3
3
3.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
3
2
2

RDS(on) Typ.(m)

VGS=2.5V VGS=4V VGS=4.5V VGS=10V

138
55
42

200

260
140
110
80
60

310
310
260
310
260
310
310

210

94
40
32
40
65
67
168
150
53
255
180
80
65
55
40
145
95
100
70
170
170
180
170
180
170
170
600
160
170
240

89
38
30
36
60
60
148
140
47
240
170
72
60
50
35
120
85
90
65
155
155
170
155
170
155
155
500

165
200

27
45
44
96

38
210

80
55
60
45

300
90

150

Middle Power MOSFETsSOP8

Package

PD(W)

Polarity

Nch

SOP8

2.0

Nch+Nch

Nch+Nch+SBD

13

2.4
4.6
7.6
6.8
4.5
5.3
2.2
2.3
6.3
2
1.7
6.4
9
10.5
12.2
4.4
5.2
6
9.2
3
3
1.6
3
1.6
3
3
1.7

VGS=5V

1: When mounted on a 40x40x0.7mm ceramic substrate

Qg(nC)
VGS=4.5V

MOSFETs

Part No.

VDSS(V)

ID(A)

RSS065N03
RSS090N03
RSS100N03
RSS110N03
RSS125N03
RSS130N03
RSS070N05
RSS080N05
RSS085N05
RSS095N05
RSS065N06
SP8K5
SP8K1
SP8K2
SP8K3
SP8K4
SP8K22
SP8K23
SP8K24
SP8K31
SP8K32
SP8K33

30
30
30
30
30
30
45
45
45
45
60
30
30
30
30
30
45
45
45
60
60
60
30
30

6.5
9
10
11
12.5
13
7
8
8.5
9.5
6.5
3.5
5
6
7
9
4.5
5
6
3.5
4.5
5
7
8.5

SP8K10S

RDS(on) Typ.(m)
VGS=4V VGS=4.5V VGS=10V
30
17
13.5
11.2
9.3
7.9
25
20
18
15
31
107
58
33
25
17
46
36
26
105
55
40
25
19

27
15
12.5
10.3
8.6
7.4
23
18
16
14
28
93
52
30
23
16
41
33
24
100
52
38
23
17.8

19
11
9.5
7.6
6.5
5.9
18
15
13
11
24
59
36
21
17
12
33
26
18
85
46
34
17
14

Qg(nC)
VGS=5V
6.1
11
14
17
20
25
12
13
15.3
18.9
11
2.5
3.9
7.2
8.4
15
6.8
8.6
15.4
3.7
7
8
8.4
8.9

Discrete Semiconductors

Middle Power MOSFETsSOP8

Package

PD(W)

Polarity

Pch

Pch+Pch

Part No.

VDSS(V)

RRS040P03

30

RRS050P03
RRS075P03
RRS090P03
RRS100P03

Qg(nC)
VGS=5V

95

85

55

30

58

52

36

30

7.5

25

22

15

21

30

17

15

11

30

30

10

14

12.5

39

RRS140P03

30

14

RSS060P05

45

7.3
38

6.7
35

5.2
9.2

80

26

23
34

RSS070P05

45

28

25

19

SP8J4

30

320

270

170

SP8J3

30

3.5

120

100

65

SP8J1

30

45

40

30

SP8J62

30

4.5

60

55

40

SP8J65

30

31

29

21.5

18

SP8J66

30

19

17.5

13.5

35

SP8M6
2.0
SP8M8

SP8M10

SP8M3

Nch+Pch

RDS(on) Typ.(m)
VGS=4V VGS=4.5V VGS=10V

SP8M2

SOP8

ID(A)

SP8M4

SP8M5

SP8M21

SP8M24

SP8M41

SP8M70

2.4
5.5
16
8

30

3.5

107

93

59

2.5

30

3.5

120

100

65

5.5

30

58

52

36

3.9

30

3.5

120

100

65

5.5

30

33

30

21

7.2

30

4.5

65

57

40

8.5

30

25

23

17

8.4

30

4.5

65

57

40

8.5

30

58

52

36

3.9

30

4.5

65

57

40

30

17

16

12

15

30

30

25

20

25

30

33

30

21

30

30

25

20

25

45

26

24

18

15.4

45

47

43

33

20

45

4.5

46

41

33

45

3.5

66

60

45

8.5

7.2

6.8
13

80

3.4

120

110

90

6.6

80

2.6

230

220

165

8.2

250

1.25

250

2.5

2.2

5.2
8
VGS=10V

MOSFETs

14

Discrete Semiconductors

Power MOSFETs (CPT3, TO-220FN, TO220-FM)

Package

CPT3

TO-220FN

TO-220FM

15

MOSFETs

PD(W)

Polarity

Part No.

VDSS(V)

ID(A)

RDS(on) Typ.()
VGS=10V
VGS=4V

RSD220N06

60

22

0.03

0.022

RSD200N10

100

20

0.045

0.041

RDD050N20

200

0.55

30

RDN050N20

200

0.55

35

RDN100N20

200

10

0.27

RDN150N20

200

15

0.12

35

RDN080N25

250

0.38

40

RDN120N25

250

12

0.16

35

RDX050N50

500

1.1

40

RDX080N50

500

0.65

45

RDX120N50

500

12

0.38

RDX030N60

600

2.7

35

RDX045N60

600

4.5

1.6

40

RDX060N60

600

0.9

45

RDX100N60

600

10

0.48

20

40

30

Nch

Nch

Nch

Discrete Semiconductors

Internal Circuits

MOSFET + SBD

Nch+SBD

Nch+SBD

(5)

(1)

(4)

(2)

Nch+SBD

(5)

(6)

(1) Anode

(1) Gate

(2) Source

(2) Source

(3) Gate

(3) Anode

(4) Drain

(3)

(4)

(1)

(2)

(3)

(5) Cathode

Pch+SBD
(4)

(4)

(1) Gate
(2) Source
(3) Cathode
(4) Anode

(4) Cathode
(5) Drain

(1)

(2)

(5) Anode

(3)

(6) Drain

Pch+SBD

Pch+SBD

(5)

(5)

(5)

(4)

(6)

(5)

(4)

(1) Anode

(1)

(2)

(3)

(1) Anode

(1) Gate

(2) Source

(2) Source

(2) Source

(3) Gate

(3) Gate

(3) Anode

(4) Drain

(4) Drain

(4) Cathode

(1)

(2)

(3)

(5) Cathode

Pch+SBD

(1)

(2)

(5) N/C

(3)

(5) Drain

(6) Cathode

Pch+SBD

(6)

(8)

(4)

(5)

(7)

(6)

(5)

(1) Anode
(2) Anode
(1) Gate

(3) Source

(2) Source

(4) Gate

(3) Anode

(5) Drain

(4) Cathode
(1)

(2)

(3)

(5) Drain

(6) Drain
(1)

(2)

(3)

(4)

(6) Drain

(7) Cathode
(8) Cathode

MOSFET Dual

Nch+Nch

Nch+Pch

(6)

(5)

(1)

(4)

(2)

(3)

Pch+Pch

(6)

(5)

(4)

(4)

(1)TR1: Source

(1)TR1: Source

(2)TR1: Gate

(2)TR1: Gate

(2)TR1: Gate

(3)TR2: Drain

(3)TR2: Drain

(3)TR2: Drain

(4)TR2: Source

(4)TR2: Source

(5)TR2: Gate

Pch+Pch

(1)

(2)

(3)

(5)TR2: Gate

(4)TR2: Source
(5)TR2: Gate
(1)

(2)

(3)

(6)TR1: Drain

(6)TR1: Drain

Nch+Nch
(7)

(6)

(5)

(8)

(7)

(6)

(5)

(1)TR1: Gate

(1)TR1: Source

(2)TR1: Source

(2)TR1: Gate

(3)TR2: Gate

(3)TR2: Source

(4)TR2: Source

(4)TR2: Gate

(5)TR2: Drain

(5)TR2: Drain

(6)TR2: Drain
(1)

(5)

(1)TR1: Source

(6)TR1: Drain

(8)

(6)

(2)

(3)

(4)

(7)TR1: Drain
(8)TR1: Drain

(6)TR2: Drain
(1)

(2)

(3)

(4)

(7)TR1: Drain
(8)TR1: Drain

MOSFETs

16

Discrete Semiconductors

Dimensions
Surface Mount Type

TCPT3

Notes: 1) Characters in ( ) denotes the JEITA No. while those in < > signify the JEDEC designation.JEDEC No.
2) For additional details, please refer to the relevant technical specifications.

17

MOSFETs

(Unit : mm)

Discrete Semiconductors

Leaded Type

Notes: 1) Characters in ( ) denotes the JEITA No. while those in < > signify the JEDEC designation.JEDEC No.
2) For additional details, please refer to the relevant technical specifications.

(Unit : mm)

MOSFETs

18

2009

MOSFETs

R0039A

Catalog No.51P6023E 03.2009 ROHM