Introduction to Design Lab

Experiment #7

20110309

1. -Flat band Voltage

MOS , Metal Substrate work function . ,
MOS Fermi Energy , Oxide interface charge
Substrate Energy band . ( Metal Oxide E-band
.)

Metal P-type silicon work fuction difference MOS

E-band .
Work function ,
silicon work function .
= + +

Flat band Voltage, Substrate E-band voltage,

Metal Substrate work function . , Ideal
, Metal p-silicon , Flat band Voltage .
= = =

N-type work function

= +

, Flat band Voltage .

= = = +

, Oxide Fixed charge .

Oixde capacitance , Fixed charge , V =

. , Flat band
.
=

2. -Threshold Voltage

Reverse Bias , Substrate Depletion layer

Oxide Substrate Inversion layer . Inversion charge

n = ( ) , Depletion charger

n = ( ) =

Exponetial charge Depletion charge .

Threshold Voltage. Oxide
= + + 2 . + 2 substrate
Oxide . Oxide capacitor
, .
=

| ()|

Q .
, =

| ()|

+ + 2 .

N-type silicon , | ()| 2

=

| ()|

+ 2 .

3. -Flat band Capacitance

 MOS Charge . Flat band

Voltage silicon major carrier Flat band Voltage
Threshold voltage Depletion layer charge .
Threshold Voltage Inversion layer charge
. Flat band voltage Voltage (
.), . Silicon carrier
, Oxide . accumulation mode
. Capacitance . , Flat band voltage
, silicon reverse bias Depletion layer .
Depletion charge Depletion layer .
capacitance
1
1
1
=
+

=

=
+ +

= 0 , ,
Depletion layer charge , .

=
+

4. -Minimum Capacitance
Threshold Voltage Inversion layer charge ,
charge Oxide , capacitance .
Depletion layer capacitance .
, .
=

Threshold Voltage, , Inversion

layer Charge AC
Depletion charge . Threshold Voltage
Capacitance .

5. -Oxide Capacitance
MOS Oxide capacitance =