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FZT749 FZT749: Typical Characteristics
FZT749 FZT749: Typical Characteristics
FZT749 FZT749: Typical Characteristics
FZT749
TYPICAL CHARACTERISTICS
td
tr
1.8
tf
IB1=IB2=IC/10
ns
ts
1.2
1.0
0.8
0.6
IC/IB=100
140
ns
1200
120
1000
100
COMPLEMENTARY TYPE
PARTMARKING DETAIL
ts
60
40
0.2
200
tr
0.01
0.1
10
FZT649
FZT749
C
B
td
20
IC/IB=10
0.001
tf
80
600
0.4
VCE=-10V
160
1.4
Switching time
- (Volts)
1.6
0.01
0.1
VCE(sat) v IC
Switching Speeds
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35
Collector-Emitter Voltage
VCEO
-25
Emitter-Base Voltage
VEBO
-5
ICM
-8
IC
-3
Ptot
-55 to +150
1.2
at Tamb=25C
Tj:Tstg
1.0
- (Volts)
VCE=2V
160
120
IC/IB=10
0.8
0.6
- Gain
200
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
-35
IC=-100A
V(BR)CEO
-25
IC=-10mA*
V(BR)EBO
-5
IE=-100A
-0.1
-10
A
A
VCB=-30V
VCB=-30V,Tamb=100C
IC/IB=100
80
40
0.001
0.01
0.1
0.4
0.001
10
0.01
0.1
hFE v IC
VBE(sat) v IC
10
- (Volts)
VCE=2V
0.8
0.6
0.4
0.001
0.01
0.1
1.0
-0.1
VEB=4V
Saturation Voltages
VCE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat)
-0.9
-1.25
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
-1.0
IC=-1A, VCE=-2V*
hFE
70
100
75
15
200
200
150
50
Transition Frequency
fT
100
160
1s
100ms
10ms
1.0ms
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
300
MHz
100
10
0.01
10
VBE(on) v IC
3 - 233
ICBO
D.C.
0.1
MAX.
Collector Cut-Off
Currents
10
TYP.
IEBO
1.2
1.0
FZT749
100
Output Capacitance
Cobo
55
Switching Times
ton
40
100
pF
VCB=-10V f=1MHz
ns
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
ns
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 232
IC=-100mA, VCE=-5V
f=100MHz
FZT749
TYPICAL CHARACTERISTICS
td
tr
1.8
tf
IB1=IB2=IC/10
ns
ts
1.2
1.0
0.8
0.6
IC/IB=100
140
ns
1200
120
1000
100
COMPLEMENTARY TYPE
PARTMARKING DETAIL
ts
60
40
0.2
200
tr
0.01
0.1
10
FZT649
FZT749
C
B
td
20
IC/IB=10
0.001
tf
80
600
0.4
VCE=-10V
160
1.4
Switching time
- (Volts)
1.6
0.01
0.1
VCE(sat) v IC
Switching Speeds
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35
Collector-Emitter Voltage
VCEO
-25
Emitter-Base Voltage
VEBO
-5
ICM
-8
IC
-3
Ptot
-55 to +150
1.2
at Tamb=25C
Tj:Tstg
1.0
- (Volts)
VCE=2V
160
120
IC/IB=10
0.8
0.6
- Gain
200
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
-35
IC=-100A
V(BR)CEO
-25
IC=-10mA*
V(BR)EBO
-5
IE=-100A
-0.1
-10
A
A
VCB=-30V
VCB=-30V,Tamb=100C
IC/IB=100
80
40
0.001
0.01
0.1
0.4
0.001
10
0.01
0.1
hFE v IC
VBE(sat) v IC
10
- (Volts)
VCE=2V
0.8
0.6
0.4
0.001
0.01
0.1
1.0
-0.1
VEB=4V
Saturation Voltages
VCE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat)
-0.9
-1.25
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
-1.0
IC=-1A, VCE=-2V*
hFE
70
100
75
15
200
200
150
50
Transition Frequency
fT
100
160
1s
100ms
10ms
1.0ms
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
300
MHz
100
10
0.01
10
VBE(on) v IC
3 - 233
ICBO
D.C.
0.1
MAX.
Collector Cut-Off
Currents
10
TYP.
IEBO
1.2
1.0
FZT749
100
Output Capacitance
Cobo
55
Switching Times
ton
40
100
pF
VCB=-10V f=1MHz
ns
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
ns
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 232
IC=-100mA, VCE=-5V
f=100MHz