Transistor

BJT

FET

JFET

IGFET

MOSFET

MESFET

Current control device + from the notes.

Voltage control device

Voltage controlled resistance region. Ohmic Region Saturation Region

Voltage controlled resistance region. Ohmic Region

Heavily doped n-type region. Drain

n+
Light doped n-type region. Ground Tungsten

GaAs Substrate

n+
Source Figure: Depletion Type MESFET

Heavily doped n-type region. Drain Light doped n-type region.

n+

Ground Tungsten

n+
Source Figure: Enhancement Type MESFET

N type substrate

Transistors Characteristics: I(DSS), V(P)

V(GS)on, I(D)on, V(th) Trans-conductance

Output to Input relationship

Opposite of Resistance

Large Slope

Small Slope