T.C.

ULUDA NVERSTES
MHENDSLK MMARLIK FAKLTES
ELEKTRONK MHENDSL BLM

ELEKTRONK DEVRELER LABORATUVARI I

DENEY 6: TTL ve CMOS KAPI KARAKTERSTKLER

Bota alma karakteristii

Ykl alma karakteristii
VOH - IOH karakteristii
VOL - IOL karakteristii
Vg-Ig karakteristii
Kaplarn dinamik karakteristikleri
Kaplar zerinde harcanan gcn lm

I. ETM
DENEY GRUBU
DENEY YAPANLAR

II. ETM

:..................
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RAPORU HAZIRLAYAN :...................................................................

Deneyin yapl tarihi Raporun gelecei tarih

......../......./2013
......../......./2013

Raporun geldii tarih

......../......./2013

Gecikme
.........gn

Deerlendirme notu

Rapor Notu

Raporu deerlendiren

Gecikme notu

ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

DENEY 6: TTL ve CMOS KAPI KARAKTERSTKLER

I. n Bilgi
Dijital sistemlerin temel elemanlar olan kaplar, ideal lojik elemanlar olmayp, yapm
teknolojisinin belirledii giri ve k direnlerine, iaret gecikmesi ve g harcamasna sahiptirler.
Bu deneyin amac, TTL ve CMOS kap elemanlarnn elektriksel zelliklerinin incelenmesidir.
II. n Hazrlk
TTL ve CMOS kap elemanlarn kataloglardan aratrarak elektriksel zellikleri asndan
karlatrnz.
VOL, VIL, VOH, VIH ve tpd neyi ifade eder? Aklaynz.
III. Deneyin Yapl
1 TTL NAND kaplarnn karakteristiklerinin bulunmas: Bu deneyde TTL NAND kaps
olarak 74ALS00 entegresini kullannz. VCC=5V alnz.
a) Bota alma karakteristii: k ykszken V=f(Vg) bantsdr. ekil 4.1deki devreyi
kurunuz. Voltmetre ile giri (Vg) ve k (V) iaretlerini lnz.
TTL
CMOS
Giri (Vg) k (V) Giri (Vg) k (V)
Ayarl
gerilim
kayna
(0-5V)

Vg
V
+5V

ekil 6.1

V
TTL

CMOS

Vg

Vg
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ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

b) Ykl alma karakteristii: Kapnn k ucuna belirli sayda eleman balanarak yklenmi
durumdaki V=f(Vg) bantsdr. ekil 6.2deki devreyi kurunuz. Voltmetre ile giri (Vg) ve k
(V) iaretlerini lnz.
TTL
CMOS
Giri (Vg) k (V) Giri (Vg) k (V)
Ayarl
gerilim
kayna
(0-5V)

Vg

+5V

ekil 6.2.

CMOS

TTL

Vg
Vg
c) VOH - IOH karakteristii: Kapnn kn lojik 1 dzeyde tutmak isteyen giri koullar olumu
iken kn lojik 0 dzeyine zorlanmas halinde elde edilen VOH=f(IOH) bantsdr. ekil 6.3de
devreyi kurunuz. Ayarl gerilim kaynann gerilimini, kap kndaki gerilim, ve kapdan akan
akm lnz.
TTL
CMOS
Gerilim
kayna
+5V

IOH 100
V
(VOH)

Ayarl
gerilim
kayna
(0-5V)

k
Kap
gerilimi(VOH) akm
(IOH)

ekil 6.3.

3/8

Gerilim
kayna

k
Kap
gerilimi(VOH) akm
IOH)

ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

VOH

VOH

CMOS

TTL

IOH
IOH
d) VOL - IOL karakteristii: Kapnn kn lojik 0 dzeyde tutmak isteyen giri koullar olumu
iken kn lojik 1 dzeyine zorlanmas halinde elde edilen VOL=f(IOL) bantsdr. ekil 6.4de
devreyi kurunuz. Ayarl gerilim kaynann gerilimini, kap kndaki gerilim, ve kapdan akan
akm lnz.
TTL
CMOS
Gerilim
kayna
IOL

+5V

V
(VOL)

Ayarl
gerilim
kayna
(0-5V)

k
Kap
gerilimi(VOL) akm
(IOL)

Gerilim
kayna

k
Kap
gerilimi(VOL) akm
IOL)

ekil 6.4.

VOL

VOL
TTL

CMOS

IOL

IOL
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ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

e) Vg-Ig karakteristii: k ykszken giri gerilimi ile giri akm arasndaki Vg=f(Ig) bantsdr.
ekil 6.5deki devreyi kurunuz. Ayarl gerilim kaynann gerilimini, giri gerilimi (Vg) ve giri
akm (Ig) lnz.
TTL
Ayarl
gerilim
kayna
(0-5V)

Gerilim
kayna

Giri
Giri
Gerilim
gerilim Vg) akm (Ig) kayna

CMOS
Giri
Giri akm
gerilim Vg) (Ig)

ig
Vg
+5V

ekil 6.5.

Vg

Vg

TTL

CMOS

Ig

Ig

f) TTL kaplarnn dinamik karakteristikleri: ekil 6.6da gsterildii gibi bir lojik kapnn
gecikmesinin t pd ve t pd olmak zere iki bileeni vardr. Kap gecikmesini lmek iin ekil

6.7deki Ring osilatr devresini kurunuz. aretin periyodunu lnz. t pd t pd t pd 2 T 2n

forml ile kap gecikmesini hesaplaynz. Burada n=1,3,5,... olup kap saysdr.

5/8

ELN3033 ELEKTRONK DEVRELER LABORATUARI I

t pd

DENEY NO: 6

TTL iin

t pd
5V

1,5V
0V

ekil 6.7

5V
1,5V
0V

T=..............
tpd=..............
CMOS iin

ekil 6.6

T=..............
tpd=..............

g) TTL kaplar zerinde harcanan gcn lm: ekil 6.8deki devrenin giriine tepeden tepeye
5Vluk kare dalga uygulaynz. Giri iaretinin frekansn 0Hzden 5MHze kadar deitirerek
eitli frekanslar iin beslemeden ekilen akm ( ) lnz.
bantsndan kap
zerinde harcanan gcn frekansla deiimini tablo halinde veriniz.
TTL
CMOS
Frekans

ICC

Pd

Frekans

ICC

Pd

Vg

ekil 6.8.

Pd

Pd

CMOS

TTL

f
f
2 CMOS NAND kaplarnn karakteristiklerinin bulunmas: Bu deneyde CMOS NAND
kaps olarak DC4011BC entegresini kullannz.
alnz. I. blmde yaplan lmleri
tekrarlaynz.
6/8

ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

III. Raporda istenenler

1. Deneyde elde edilen sonularn karakteristiklerini iziniz. Bulduunuz sonular teorik deerler
ile karlatrnz.
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2. ekil 6.7deki devre iin t pd t pd t pd 2 T 2n bantsn elde ediniz.

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ELN3033 ELEKTRONK DEVRELER LABORATUARI I

DENEY NO: 6

3. Deiik trlerdeki tmdevre kap elemanlar iin eitli yapm teknolojilerini (DTL, TTL, LSTTL, ECL, CMOS, vb.) inceleyerek gecikme ve g harcamas asndan karlatrnz.
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