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RF Basics (Block Diagram)
RF Basics (Block Diagram)
RF Basics (Block Diagram)
Contents
Building blocks in RF system and basic performances Device characteristics in RF application Low noise amplifier design Mixer design Oscillator design
2) Mixer Filter
3) Oscillator
2) Mixer+ Oscillator Undesired Down conversion dB 3) Filter Frequency conversion dB Desired 1) Amplifier
Log (f)
Up conversion
Log (f)
RF Amplifier
Gain: Amplify small signal or generate large signal. Noise: Smaller noise and larger SNR. Linearity: Smaller non-linearity.
Non-linearity generates undesired frequency components.
2 3 vout (t ) = 1vin (t ) + 2 vin (t ) + 3vin (t ) + .....
(cos(1t ) + cos(2t ))
IP3
IMD3 SFDR
Slope=3
Noise Floor
SNR min
SNR min
Pin IIP3
6
Dynamic range
Noise Floor = 174dBm + NF + 10 log BW
kT limitation Bandwidth
SFDR: Spurious free dynamic range The input power range over which third order inter-modulation products are below the minimum detectable signal level.
SFDR =
Non-linearity
CP1dB: The input level at which the small signal gain has dropped by 1dB.
CP1dB = 0.145
1 3
IP3: The metric third order intercept point. It is the point where the amplitude of third order inter modulation is equal to the that of fundamental.
AIP 3 =
4 1 3 3
IIP3: Input referred intercept point OIP3: Output referred intercept point
MOS transistor
Intrinsic gate voltage and gm are the most important factors in RF CMOS.
Drain Gate G
Body
rds
D Cds S, B
Equivalent Circuit
Cutoff frequency: fT
For higher fT, increase gm and decrease Cin.
Ii Io G D Cin Ii Vi gmVi fT: Frequency at which the current gain is unity.
Output current
gm fT = 2Cin
10
Amplifier gain
For higher voltage gain, increase gm, fT, ro (Q), and decrease input and gate resistance Ig rs Vs Vg
Cin
Id
gmVg
Log (G)
g =
1 rsCin
G
T =
T r 0 rs
gm Cin
ro
G=gmr0
0 =
For the larger gain 1
gmro r0 = T rsCin rs
Ids Veff 2
Log (f)
ro