Practice problems for the quiz Yield and Thermal Oxidation

Wafer/Process Yield:

Consider the following:
A 3 diameter wafer => d = 76.2 mm
P
a
= 1 defect/cm
2
= 1 10
4
defects/m
2

A
d
= 2 cm
2
= 2 10
-4
m
2
o = 2

Questions:
a) What is the wafer yield ?
b) What is the total process yield, assuming out of 10 wafers, 3 wafers are lost due to misc. processing
errors.?
c) What is the total number of die per wafer?
d) What is the number of good die per wafer?











Answers:
a) % 25
2
10 2 10 1
1
2
4 4
=
|
|
.
|

\
|
+ =

w
Y
b)
w p
Y Y

=
10
3 10

c)
( )
10 6 . 10
10 2 2
0762 . 0
10 2
2 / 0762 . 0
4
4
2
~ =

t t
w
X die
d) 5 . 2 25 . 0 10 = = =
w w good
Y X X die/wafer (on average)

Thermal Oxidation

Assume:
Wet oxidation at 640 torr at 1100 C
Parabolic constant B: 0.5 m
2
/hr
Linear constant B/A: 5 m/hr
Assume no initial oxide layer, i.e. = 0.


Question:
What is the oxide thickness after a) 1h, b) 2h, and c) 5h ?


Answer:
A = 0.5/5 = 0.1
A
2
/4B = 0.005h=18s
Even for 1h (3600s) t >> 18s, so we are in the parabolic regime.
a) 1h: 707 . 0 1 5 . 0
0
= = = Bt X m
b) 2h: 1 2 5 . 0
0
= = = Bt X m
c) 5h: 58 . 1 5 5 . 0
0
= = = Bt X m